Abstract: A method of producing a quantum dot comprising zinc selenide, the method comprising: providing an organic ligand mixture comprising a carboxylic acid compound, a primary amine compound, a secondary amide compound represented by Chemical Formula 1, and a first organic solvent: RCONHR??Chemical Formula 1 wherein each R is as defined herein; heating the organic ligand mixture in an inert atmosphere at a first temperature to obtain a heated organic ligand mixture; adding a zinc precursor, a selenium precursor, and optionally a tellurium precursor to the heated organic ligand mixture to obtain a reaction mixture, wherein the zinc precursor does not comprise oxygen; and heating the reaction mixture at a first reaction temperature to synthesize a first semiconductor nanocrystal particle.

Abstract: A semiconductor device and methods of manufacturing the same are provided. The semiconductor device includes a substrate, word lines, a doped junction, bit line structures, and buried contacts. The substrate has active regions. The word lines extend across the active regions. The doped junction has impurities and is arranged at the active regions, and includes first junctions and second junctions, each first junction arranged at a central portion of one of the active regions and each second junction arranged at an end portion of another one of the active regions, a buried semiconductor layer being included in each second junction. The bit line structures contact with a respective one of the first junctions. The buried contacts are arranged in a matrix shape, each contacting with a respective one of the second junctions and the included buried semiconductor layer and simultaneously contacting with a charge storage for storing data.

Abstract: Quantum dots and electroluminescent devices including the same, wherein the quantum dots include a core including a first semiconductor nanocrystal including a zinc chalcogenide; and a shell disposed on the core, the shell including zinc, sulfur, and selenium, wherein the quantum dots have an average particle size of greater than 10 nm, wherein the quantum dots do not include cadmium, and wherein a photoluminescent peak of the quantum dots is present in a wavelength range of greater than or equal to about 430 nm and less than or equal to about 470 nm.

Abstract: An electroluminescent device, a method of manufacturing the same, and a display device including the same. The electroluminescent device includes a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode, the emission layer including light emitting particles; an electron transport layer disposed between the first electrode and the emission layer; and a hole transport layer disposed between the second electrode and the emission layer, wherein the electron transport layer includes inorganic oxide particles and a metal-organic compound, the metal-organic compound or a thermal decomposition product of the metal-organic compound being soluble a non-polar solvent.

Abstract: A quantum dot including a core including a first semiconductor nanocrystal including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core and including zinc, tellurium, selenium, and sulfur, a production method thereof, and an electronic device including the same. The quantum dot is free of cadmium, the quantum dot has a mole ratio of tellurium with respect to selenium of less than or equal to about 0.06:1, a photoluminescence peak wavelength of the quantum dot is greater than or equal to about 450 nm and less than or equal to about 470 nanometers (nm), and a full width at half maximum (FWHM) of a photoluminescence peak of the quantum dot is less than or equal to about 41 nm.

Abstract: A quantum dot including: a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, and in the quantum dot, a mole ratio of the sulfur with respect to the selenium is less than or equal to about 2.4:1. A production method of the quantum dot and an electronic device including the same are also disclosed.

Abstract: A quantum dot includes a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on (e.g., directly on) the core and including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, wherein a size of the quantum dot is greater than or equal to about 10 nanometers (nm) and the quantum dot includes at least four protrusions. A production method thereof and an electronic device including the same are also disclosed.

Abstract: A semiconductor nanocrystal particle, a production method thereof, and a light emitting device including the same. The semiconductor nanocrystal particle includes a core including a first semiconductor nanocrystal, a first shell surrounding the core, the first shell including a second semiconductor nanocrystal including a different composition from the first semiconductor nanocrystal, a second shell surrounding the first shell, the second shell including a third semiconductor nanocrystal including a different composition from the second semiconductor nanocrystal, wherein the first semiconductor nanocrystal includes zinc and sulfur; wherein the third semiconductor nanocrystal includes zinc and sulfur; wherein an energy bandgap of the second semiconductor nanocrystal is less than an energy bandgap of the first semiconductor nanocrystal and less than an energy bandgap of the third semiconductor nanocrystal; and wherein the semiconductor nanocrystal particle does not include cadmium.

Abstract: A semiconductor device includes a bit line structure on a substrate, a spacer structure including a first spacer directly contacting a sidewall of the bit line structure, a second spacer directly contacting a portion of an outer sidewall of the first spacer, the second spacer including air, and a third spacer directly contacting an upper portion of the first spacer and covering an outer sidewall and an upper surface of the second spacer, and a contact plug structure extending in a vertical direction substantially perpendicular to an upper surface of the substrate and directly contacting an outer sidewall of the third spacer at least at a height between respective heights of a bottom and a top surface of the second spacer.

Abstract: A semiconductor device and methods of manufacturing the same are provided. The semiconductor device includes a substrate, word lines, a doped junction, bit line structures, and buried contacts. The substrate has active regions. The word lines extend across the active regions. The doped junction has impurities and is arranged at the active regions, and includes first junctions and second junctions, each first junction arranged at a central portion of one of the active regions and each second junction arranged at an end portion of another one of the active regions, a buried semiconductor layer being included in each second junction. The bit line structures contact with a respective one of the first junctions. The buried contacts are arranged in a matrix shape, each contacting with a respective one of the second junctions and the included buried semiconductor layer and simultaneously contacting with a charge storage for storing data.

Abstract: The present disclosure relates to stem cells derived from a pure chorionic trophoblast layer (chorionic trophoblast layer without villi, CT-V), which is a part of the tissues of the placenta, and cell therapy comprising same. Stem cells derived from a pure chorionic trophoblast layer according to the present invention exhibit uniform growth characteristic, and superb proliferation and differentiation characteristics compared to the conventional stem cells derived from the whole placenta, and particularly, exhibit excellent differentiation into cartilage cells, thus can be effectively used in cell therapy for treating cartilage damage, deficiency and such, and as a composition for tissue regeneration.

Abstract: A quantum dot comprising a core comprising a first semiconductor nanocrystal comprising zinc, selenium, and optionally tellurium; and a shell disposed on the core and comprising a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, and comprising zinc and at least one of sulfur and selenium, wherein the shell comprises at least three branches extending from the core, wherein at least one of the branches has a length of greater than or equal to about 2 nm, the quantum dot emits blue light comprising a maximum emission peak at a wavelength of less than or equal to about 470 nm, a full width at half maximum (FWHM) of the maximum emission peak is less than about 35 nm, and the quantum dot does not comprise cadmium.

Abstract: In the present invention, it was discovered that when vascular endothelial cells are co-cultured with mesenchymal stem cells, an improvement is brought about in the niche activity of mesenchymal stem cells and the self-renewal of hematopoietic or neural stem cells and particularly that the niche activity and the self-renewal of hematopoietic or neural stem cells can easily be controlled by regulating the stimulus (cytokines, etc.) of vascular endothelial cells to the mesenchymal stem cells. Therefore, the present invention can not only improve the self-renewal of stem cells, but also easily control it as needed, and thus is expected to expand the usefulness of mesenchymal stem cell-based cell therapy.

Abstract: A method of producing a quantum dot comprising zinc selenide, the method comprising: providing an organic ligand mixture comprising a carboxylic acid compound, a primary amine compound, a secondary amide compound represented by Chemical Formula 1, and a first organic solvent: RCONHR??Chemical Formula 1 wherein each R is as defined herein; heating the organic ligand mixture in an inert atmosphere at a first temperature to obtain a heated organic ligand mixture; adding a zinc precursor, a selenium precursor, and optionally a tellurium precursor to the heated organic ligand mixture to obtain a reaction mixture, wherein the zinc precursor does not comprise oxygen; and heating the reaction mixture at a first reaction temperature to synthesize a first semiconductor nanocrystal particle.

Abstract: The present disclosure relates to stem cells derived from the basal portion of the chorionic trophoblast layer (bCT), which is a part of the issues of the placenta, and cell therapy comprising same. Stem cells derived from the basal portion of the chorionic trophoblast layer according to the present invention exhibit uniform growth characteristic, and superb proliferation and differentiation characteristic as compared with the conventional stem cells derived from the full placenta or other tissues, and exhibit excellent tissue regeneration effect in an animal model, thus can be effectively used in cell therapy.

Abstract: A semiconductor device is provided. The provided semiconductor device may have enhanced reliability and operating characteristics. The semiconductor device includes a substrate, a device isolation film formed within the substrate, a first gate structure formed within the substrate, a recess formed on at least one side of the first gate structure and within the substrate and the device isolation film, the recess comprising an upper portion and a lower portion wherein the lower portion of the recess is formed within the substrate and the upper portion of the recess is formed across the substrate and the device isolation film, a buried contact filling the recess and an information storage electrically connected to the buried contact.

Abstract: A semiconductor device is provided. The provided semiconductor device may have enhanced reliability and operating characteristics. The semiconductor device includes a substrate, a device isolation film formed within the substrate, a first gate structure formed within the substrate, a recess formed on at least one side of the first gate structure and within the substrate and the device isolation film, the recess comprising an upper portion and a lower portion wherein the lower portion of the recess is formed within the substrate and the upper portion of the recess is formed across the substrate and the device isolation film, a buried contact filling the recess and an information storage electrically connected to the buried contact.

Abstract: A method of fabricating a semiconductor device. A cell area and a core area is defined in a substrate. A bit line structure disposed in the cell area is provided. A gate structure disposed in the core area is provided, and a core capping film disposed on the gate structure is provided. A height of the core capping film is greater than a height of the bit line structure. A first contact film is formed on the bit line structure. A second contact film is formed on the core capping film. A mask is formed on the first contact film. An upper surface of the core capping film is exposed using the mask. The first contact film is etched until a height of the first contact film becomes less than a height of the bit line structure using an etching process. In the etching process, an etching rate for the first contact film is greater than etching rates for the bit line structure and the core capping film.

Abstract: Provided are a composition having anti-oxidant, anti-aging, and autophagy activities to thereby be useful for preventing, alleviating, or treating age-related metabolic diseases including neurodegenerative diseases or type 2 diabetes, and uses thereof.

Abstract: The present invention provides a mobile terminal capable of executing a plurality of applications, and the mobile terminal comprises: a wireless communication unit including a display unit; and a control unit for controlling the transmission unit so as to transmit information on the second application and controlling the reception unit so as to receive the wireless signal from the external terminal in order to control the second application, controlling the display unit so as to add or change contents constituting the executing screen on the basis of a touch input of a user for controlling the first application.