Patents by Inventor Jin-Bae Kim

Jin-Bae Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120295052
    Abstract: A conductive single-sided tape includes a conductive, nonwoven adhesive layer and a metal layer positioned adjacent the conductive, nonwoven adhesive layer. The conductive, nonwoven adhesive layer includes a conductive nonwoven substrate having a plurality of passageways, an adhesive material positioned within at least a portion of the passageways and a plurality of metal particles dispersed within the adhesive material.
    Type: Application
    Filed: May 17, 2012
    Publication date: November 22, 2012
    Inventors: Jeong-Wan Choi, Jin-Bae Kim
  • Publication number: 20120182710
    Abstract: Disclosed herein is an LED flash lens unit which prevents occurrence of yellow bands or yellow rings if LED light is concentrated through an LED flash lens improving manufacturing ability and mass production to have high performance and high efficiency.
    Type: Application
    Filed: December 28, 2011
    Publication date: July 19, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jin Eui Lee, Seung Jae Lee, Dong Seob Jang, Heung Bom Kim, Jin Bae Kim
  • Patent number: 8070919
    Abstract: Provided is a method for preparing a one-dimensional spin photonic crystal device and a one-dimensional spin photonic crystal device prepared by the same. The method comprises forming magnetic and nonmagnetic regions by the interference of laser beams generated from a femtosecond laser light source. The method of the present invention enables production of one-dimensional spin photonic crystals having excellent properties by a rapid and simple process, and is therefore suitable for high integration and large-scale production of desired devices. Further, the prepared photonic crystals exhibit excellent magneto-optical effects and are therefore applicable to development of novel optical devices, and the like.
    Type: Grant
    Filed: May 1, 2008
    Date of Patent: December 6, 2011
    Assignee: IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)
    Inventors: Young-Pak Lee, Joo-Yull Rhee, Jin-Bae Kim, Geon-Joon Lee
  • Patent number: 7517755
    Abstract: A method for fabricating a semiconductor device includes forming a gate structure comprising a stacked structure of a gate electrode and a gate hard mask layer over a semiconductor substrate having a device isolation structure. An insulating film filling up the gate structure is formed. A predetermined region of the insulating film is selectively etched to expose the semiconductor substrate of a bit line contact region. A C-HALO ion implantation process is subjected to the exposed semiconductor substrate. The insulating film is removed.
    Type: Grant
    Filed: June 8, 2006
    Date of Patent: April 14, 2009
    Assignee: Hynix Semiconductor Inc.
    Inventor: Jin Bae Kim
  • Publication number: 20090022996
    Abstract: Provided is a method for preparing a one-dimensional spin photonic crystal device and a one-dimensional spin photonic crystal device prepared by the same. The method comprises forming magnetic and nonmagnetic regions by the interference of laser beams generated from a femtosecond laser light source. The method of the present invention enables production of one-dimensional spin photonic crystals having excellent properties by a rapid and simple process, and is therefore suitable for high integration and large-scale production of desired devices. Further, the prepared photonic crystals exhibit excellent magneto-optical effects and are therefore applicable to development of novel optical devices, and the like.
    Type: Application
    Filed: May 1, 2008
    Publication date: January 22, 2009
    Inventors: Young-Pak Lee, Joo-Yull Rhee, Jin-Bae Kim, Geon-Joon Lee
  • Patent number: 7278888
    Abstract: A bias-T apparatus and its center conductor for providing radio frequency signals and power source to outdoor equipment of a Base Transceiver Station (BTS) in a mobile communication. system. The bias-T apparatus includes a housing having an input connector and an output connector integrally formed at both ends of the housing, a housing hole formed through central portions of the input and output connectors, and a fixing hole formed inside of an upper central portion of the housing, the input connector being connected to a transceiver system, the output connector being connected to an antenna; and a center conductor assembly connected to the input and output connectors for providing electric connection for the bias-T apparatus.
    Type: Grant
    Filed: August 4, 2003
    Date of Patent: October 9, 2007
    Assignee: KMW Inc.
    Inventors: Duk-Yong Kim, Young-Choon Jang, Jin-Bae Kim
  • Publication number: 20070173042
    Abstract: A method for fabricating a semiconductor device includes forming a gate structure comprising a stacked structure of a gate electrode and a gate hard mask layer over a semiconductor substrate having a device isolation structure. An insulating film filling up the gate structure is formed. A predetermined region of the insulating film is selectively etched to expose the semiconductor substrate of a bit line contact region. A C-HALO ion implantation process is subjected to the exposed semiconductor substrate. The insulating film is removed.
    Type: Application
    Filed: June 8, 2006
    Publication date: July 26, 2007
    Applicant: Hynix Semiconductor Inc.
    Inventor: Jin Bae Kim
  • Patent number: 7041155
    Abstract: A nitrogen selective adsorbent comprises a zeolite of a faujasite crystalline structure containing Li+ and at least one of NH+ and H+ as essential cations, and has a nitrogen adsorption characteristic represented by specific correlation between the number of associated Li+ ions per unit lattice of a zeolite crystal and the amount of adsorbed nitrogen per unit lattice of the zeolite crystal. An air separation method employs the aforesaid nitrogen selective adsorbent for separation between nitrogen and oxygen by selective adsorption of nitrogen in air.
    Type: Grant
    Filed: April 20, 2000
    Date of Patent: May 9, 2006
    Assignee: Air Water, Inc.
    Inventors: Jin-Bae Kim, Hisanao Jo, Haruo Yoshioka, Hiromi Kiyama
  • Publication number: 20050101191
    Abstract: The present invention relates to a mobile communication system, and more particularly to a bias-T apparatus and its center conductor for providing radio frequency signals and power source to outdoor equipment of a Base Transceiver Station (BTS) in a mobile communication system. The bias-T apparatus comprises: a housing having an input connector and an output connector integrally formed at both ends of the housing, a housing hole formed through central portions of the input and output connectors, and a fixing hole formed inside of an upper central portion of the housing, the input connector being connected to a transceiver system, the output connector being connected to an antenna; and a center conductor assembly connected to the input and output connectors for providing electric connection for the bias-T apparatus.
    Type: Application
    Filed: August 4, 2003
    Publication date: May 12, 2005
    Inventors: Duk-Yong Kim, Young-Choon Jang, Jin-Bae Kim
  • Patent number: 6761754
    Abstract: A nitrogen selective adsorbent comprises a zeolite of a faujasite crystalline structure containing Li+ and at least one of NH+ and H+ as essential cations, and has a nitrogen adsorption characteristic represented by specific correlation between the number of associated Li+ ions per unit lattice of a zeolite crystal and the amount of adsorbed nitrogen per unit lattice of the zeolite crystal. An air separation method employs the aforesaid nitrogen selective adsorbent for separation between nitrogen and oxygen by selective adsorption of nitrogen in air.
    Type: Grant
    Filed: October 18, 2002
    Date of Patent: July 13, 2004
    Assignee: Air Water, Inc.
    Inventors: Jin-Bae Kim, Hisanao Jo, Haruo Yoshioka, Hiromi Kiyama
  • Patent number: 6423121
    Abstract: A nitrogen adsorbent comprising a crystalline X zeolite having a faujasite structure with an SiO2/Al2O3 ratio of less than 3.0, wherein the crystal contains at least one trivalent element of the group consisting of Fe, B and Ga and (AlO4)5− tetrahedral units thereof associated with cations. Although the adsorbent contains a designated trivalent element in the zeolite, it maintains the number of cation sites contributing to adsorption, has an excellent separation performance of nitrogen and oxygen, and exhibits excellent heat resistance. Further, when the nitrogen adsorbent of the present invention is used in such a particular manner that it adsorbs nitrogen after being heated under a vacuum, adsorption performance is improved.
    Type: Grant
    Filed: June 14, 2000
    Date of Patent: July 23, 2002
    Assignee: Daido Hoxan Inc.
    Inventors: Hiromi Kiyama, Haruo Yoshioka, Hisanao Jo, Jin-Bae Kim