Patents by Inventor Jin-Dong Song
Jin-Dong Song has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230404453Abstract: A device for monitoring brain-object interactions in a community includes a probe module attached to each individual and including a stimulation device, a specific wavelength emitting device, an infrared (IR) receiving device and a recording memory; a central controller to regulate a connection between the probe module and at least one object to control and monitor the probe module or the object; a plurality of IR emitters to transmit a time sync signal and a command to the probe module to monitor the individual; and a plurality of specific wavelength receivers to transmit the electrical signal received by the probe module to the central controller. Accordingly, it is possible to integratedly control the connection between the probe module and the object through the central controller and prevent confusion and loss of data transmission, thereby achieving efficient monitoring of the community.Type: ApplicationFiled: March 28, 2023Publication date: December 21, 2023Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Jin-Dong SONG, Jee Hyun CHOI
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Patent number: 11107894Abstract: Provided is a Group III-V compound semiconductor device. The device includes a substrate, a compound semiconductor layer provided on the substrate; and a buffer layer interposed between the compound semiconductor layer and the substrate. The compound semiconductor layer includes a first semiconductor area having a first conductivity type and a second semiconductor area having a second conductivity type. The buffer layer includes a high electron density area. In the buffer layer, an electron density of the high electron density area is higher than an electron density outside the high electron density area.Type: GrantFiled: February 22, 2019Date of Patent: August 31, 2021Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Hyunsu Ju, Jin-Dong Song, Joonyeon Chang, Gyosub Lee
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Patent number: 10901246Abstract: An optical phase shifter according to an embodiment for achieving the object of the present disclosure includes a first semiconductor layer formed on a substrate, a second semiconductor layer having opposite polarity to the first semiconductor layer, an insulating layer formed between the first semiconductor layer and the second semiconductor layer, and including ferroelectrics, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer. According to an embodiment, the introduction of ferroelectric materials to a semiconductor-insulator-semiconductor (SIS) optical phase shifter brings about improvement in charge collection efficiency resulting from the negative capacitance effect, thereby achieving higher phase modulation efficiency and lower power consumption. Additionally, it is possible to realize a new structure of optical switch or modulator device through design changes of the type of ferroelectrics and the structural variables.Type: GrantFiled: August 1, 2019Date of Patent: January 26, 2021Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Jae-Hoon Han, Sanghyeon Kim, Pavlo Bidenko, Subin Lee, Jin-Dong Song
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Patent number: 10686534Abstract: A method for optical interconnection between semiconductor chips according to an embodiment include converting an electrical signal to an optical signal, transmitting the optical signal to a second substrate disposed above or below a first substrate using an optical transmitter provided on the first substrate, receiving the optical signal using an optical detector provided on the second substrate, and converting the received optical signal to an electrical signal. Accordingly, using a mid-infrared wavelength range of light that is transparent to semiconductor materials such as silicon and next-generation high-mobility materials, it is possible to enable interconnection between stacked semiconductor chips without using metal wiring.Type: GrantFiled: April 5, 2019Date of Patent: June 16, 2020Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Jaehoon Han, Sanghyeon Kim, Hyunsu Ju, Jin-Dong Song
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Patent number: 10566427Abstract: A high output and high speed electronic device having low cost and high productivity is disclosed. The copper halide semiconductor based electronic device, includes a substrate, a copper halide channel layer formed on the substrate, an insulating layer formed on the copper halide channel layer, a gate electrode formed on the insulating layer, a first n+copper halide layer formed on the copper halide channel layer to be disposed at a first side of the gate electrode, the first n+copper halide layer comprising n-type impurities, a drain electrode formed on the first n+copper halide layer, a second n+copper halide layer formed on the copper halide channel layer to be disposed at a second side of the gate electrode, which is opposite to the first side, the second n+copper halide layer comprising n-type impurities, and a source electrode formed on the second n+copper halide layer.Type: GrantFiled: November 30, 2016Date of Patent: February 18, 2020Assignee: PETALUX INC.Inventors: Do Yeol Ahn, Sang Joon Park, Seung Hyun Yang, Jin Dong Song
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Publication number: 20200041825Abstract: An optical phase shifter according to an embodiment for achieving the object of the present disclosure includes a first semiconductor layer formed on a substrate, a second semiconductor layer having opposite polarity to the first semiconductor layer, an insulating layer formed between the first semiconductor layer and the second semiconductor layer, and including ferroelectrics, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer. According to an embodiment, the introduction of ferroelectric materials to a semiconductor-insulator-semiconductor (SIS) optical phase shifter brings about improvement in charge collection efficiency resulting from the negative capacitance effect, thereby achieving higher phase modulation efficiency and lower power consumption. Additionally, it is possible to realize a new structure of optical switch or modulator device through design changes of the type of ferroelectrics and the structural variables.Type: ApplicationFiled: August 1, 2019Publication date: February 6, 2020Inventors: Jae-Hoon HAN, Sanghyeon KIM, Pavlo BIDENKO, Subin LEE, Jin-Dong SONG
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Publication number: 20190312654Abstract: A method for optical interconnection between semiconductor chips according to an embodiment include converting an electrical signal to an optical signal, transmitting the optical signal to a second substrate disposed above or below a first substrate using an optical transmitter provided on the first substrate, receiving the optical signal using an optical detector provided on the second substrate, and converting the received optical signal to an electrical signal. Accordingly, using a mid-infrared wavelength range of light that is transparent to semiconductor materials such as silicon and next-generation high-mobility materials, it is possible to enable interconnection between stacked semiconductor chips without using metal wiring.Type: ApplicationFiled: April 5, 2019Publication date: October 10, 2019Inventors: Jaehoon HAN, Sanghyeon KIM, Hyunsu JU, Jin-Dong SONG
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Publication number: 20190267453Abstract: Provided is a Group III-V compound semiconductor device. The device includes a substrate, a compound semiconductor layer provided on the substrate; and a buffer layer interposed between the compound semiconductor layer and the substrate. The compound semiconductor layer includes a first semiconductor area having a first conductivity type and a second semiconductor area having a second conductivity type. The buffer layer includes a high electron density area. In the buffer layer, an electron density of the high electron density area is higher than an electron density outside the high electron density area.Type: ApplicationFiled: February 22, 2019Publication date: August 29, 2019Inventors: Hyunsu JU, Jin-Dong SONG, Joonyeon CHANG, Gyosub LEE
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Publication number: 20180350920Abstract: A high output and high speed electronic device having low cost and high productivity is disclosed. The copper halide semiconductor based electronic device, includes a substrate, a copper halide channel layer formed on the substrate, an insulating layer formed on the copper halide channel layer, a gate electrode formed on the insulating layer, a first n+copper halide layer formed on the copper halide channel layer to be disposed at a first side of the gate electrode, the first n+copper halide layer comprising n-type impurities, a drain electrode formed on the first n+copper halide layer, a second n+copper halide layer formed on the copper halide channel layer to be disposed at a second side of the gate electrode, which is opposite to the first side, the second n+copper halide layer comprising n-type impurities, and a source electrode formed on the second n+copper halide layer.Type: ApplicationFiled: November 30, 2016Publication date: December 6, 2018Applicant: PETALUX INC.Inventors: Do Yeol AHN, Sang Joon PARK, Seung Hyun YANG, Jin Dong SONG
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Publication number: 20180226526Abstract: A trasparent PN junction device and an electronic device using the PN junction device are provided. The PN junction device to achieve above objects of the invention includes a support substrate, a capper chloride (CuCl) thin film layer, a transparent electrode layer, a first electrode and a second electrode. The capper chloride thin film layer is formed on the supporting substrate and operates as a P-type semiconductor layer. The transparent electrode layer is formed on the capper chloride thin film layer and operates as an N-type semiconductor layer. The first electrode is formed on the capper chloride thin film layer. The second electrode is formed on the transparent electrode layer. Further, the transparent electrode layer may include indium tin oxide (ITO) or indium zinc oxide (IZO).Type: ApplicationFiled: September 30, 2016Publication date: August 9, 2018Applicant: PETALUX INC.Inventors: Do Yeol AHN, Sang Joon PARK, Jin Dong SONG, Seung Hyun YANG
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Patent number: 9331266Abstract: A non-volatile reconfigurable logic device executing logical operations and a memory function and controlled by a magnetic field is provided. The reconfigurable logic device includes i) at least one semiconductor device; and ii) a pair of magnetic field controlled devices respectively spaced apart from both sides of the semiconductor device and that are adapted to generate magnetic field leakage to control the semiconductor device. The semiconductor device includes i) a first semiconductor layer; and ii) a second semiconductor layer located on the first semiconductor layer. One of the first semiconductor layer and the second semiconductor layer is a p-type semiconductor layer and the other is an n-type semiconductor layer.Type: GrantFiled: December 18, 2013Date of Patent: May 3, 2016Assignees: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY, THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE NAVYInventors: Joon Yeon Chang, Jin Ki Hong, Jin Dong Song, Mark Johnson
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Patent number: 9240511Abstract: Disclosed is a photodetector including an electrically conductive substrate, a first electrode formed on the substrate, a second electrode disposed to be spaced apart from the first electrode, a plasmonic nanostructure positioned between the first electrode and the second electrode and having surface plasmon resonance, and a resistance measuring device or an electrical conductivity measuring device connected to the first electrode and the second electrode.Type: GrantFiled: December 30, 2013Date of Patent: January 19, 2016Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Seung Yong Lee, Jin Dong Song, So-Hye Cho, Jin Ock Park, Jong-Ku Park
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Patent number: 9190541Abstract: In an aspect of the present disclosure, there is disclosed a manufacture method of an antireflection coating using a self-assembly nano structure, which includes forming a first metal droplet on a substrate by means of droplet epitaxy, depositing a first non-metal on the formed first metal droplet, and forming a first nano compound crystal by means of self-assembly of the deposited first non-metal and the first metal droplet.Type: GrantFiled: May 31, 2013Date of Patent: November 17, 2015Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Jin-Dong Song, Eunhye Lee, Min Hwan Bae, Won Jun Choi, Jae Jin Yoon, Il Ki Han
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Publication number: 20150053980Abstract: Disclosed is a photodetector including an electrically conductive substrate, a first electrode formed on the substrate, a second electrode disposed to be spaced apart from the first electrode, a plasmonic nanostructure positioned between the first electrode and the second electrode and having surface plasmon resonance, and a resistance measuring device or an electrical conductivity measuring device connected to the first electrode and the second electrode.Type: ApplicationFiled: December 30, 2013Publication date: February 26, 2015Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Seung Yong LEE, Jin Dong SONG, So-Hye CHO, Jin Ock PARK, Jong-Ku PARK
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Patent number: 8895412Abstract: Disclosed is a nano-structure manufacturing method which includes: forming a first semiconductor composite layer, a semiconductor quantum structure layer, a second semiconductor composite layer, and a semiconductor quantum dot layer on a substrate in order; thermally treating the semiconductor quantum dot layer so that quantum dots of the semiconductor quantum dot layer are aggregated; and performing an etching process by using the aggregated quantum dots as a mask.Type: GrantFiled: November 5, 2012Date of Patent: November 25, 2014Assignee: Korea Institute of Science and TechnologyInventors: Seung Kyu Ha, Su Youn Kim, Il Ki Han, Jin Dong Song, Won Jun Choi
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Publication number: 20140217441Abstract: In an aspect of the present disclosure, there is disclosed a manufacture method of an antireflection coating using a self-assembly nano structure, which includes forming a first metal droplet on a substrate by means of droplet epitaxy, depositing a first non-metal on the formed first metal droplet, and forming a first nano compound crystal by means of self-assembly of the deposited first non-metal and the first metal droplet.Type: ApplicationFiled: May 31, 2013Publication date: August 7, 2014Inventors: Jin-Dong SONG, Eunhye LEE, Min Hwan BAE, Won Jun CHOI, Jae Jin YOON, Il KI HAN
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Patent number: 8780951Abstract: There is provided a distributed Bragg's reflector (DBR) comprising a substrate and an unit distributed Bragg's reflector (DBR) layer, wherein a multi-layer is laminated on the substrate. The unit DBR layer is composed of a multi-layer laminated structure of unit digital-alloy multinary compound semiconductor layer/multinary compound semiconductor layer or unit digital-alloy multinary compound semiconductor layer/unit digital-alloy multinary compound semiconductor layer. The unit digital-alloy multinary compound semiconductor layer is composed of the multi-layer laminated structure of the first layer of multinary compound semiconductor and the second layer of a different multinary compound semiconductor on said first layer. The digital-alloy distributed Bragg's reflector of the present invention has a uniform quality on the substance area and the filter and reflector having uniformly high quality can be mass produced by using the reflector.Type: GrantFiled: November 19, 2009Date of Patent: July 15, 2014Assignee: Korea Institute of Science and TechnologyInventors: Jin Dong Song, Won Jun Choi, Jung Il Lee
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Patent number: 8775139Abstract: A method for simulating fluid flow includes: discretizing a space in which a fluid flows into a regular lattice; assuming that fluid particles repetitively move and collide in the lattice; deriving a univariate polynomial equation by comparing the n-th (n is a non-negative integer) order momentum of velocity between the Maxwell-Boltzmann distribution and the discretized Maxwell-Boltzmann distribution; calculating the weight coefficients corresponding to the discrete velocities of the fluid particles based on the univariate polynomial equation; and deriving a lattice Boltzmann model using the weight coefficients. A lattice Boltzmann model with superior stability and accuracy may be derived easily.Type: GrantFiled: June 16, 2011Date of Patent: July 8, 2014Assignee: Korea Institute of Science and TechnologyInventors: Jae Wan Shim, Hyun Cheol Koo, Suk Hee Han, Byoung Chul Min, Jun Woo Choi, Kyung Ho Shin, Jin Dong Song
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Publication number: 20140167814Abstract: A non-volatile reconfigurable logic device executing logical operations and a memory function and controlled by a magnetic field is provided. The reconfigurable logic device includes i) at least one semiconductor device; and ii) a pair of magnetic field controlled devices respectively spaced apart from both sides of the semiconductor device and that are adapted to generate magnetic field leakage to control the semiconductor device. The semiconductor device includes i) a first semiconductor layer; and ii) a second semiconductor layer located on the first semiconductor layer. One of the first semiconductor layer and the second semiconductor layer is a p-type semiconductor layer and the other is an n-type semiconductor layer.Type: ApplicationFiled: December 18, 2013Publication date: June 19, 2014Applicants: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Joon Yeon CHANG, Jin Ki HONG, Jin Dong SONG, Mark JOHNSON
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Publication number: 20140030872Abstract: Disclosed is a nano-structure manufacturing method which includes: forming a first semiconductor composite layer, a semiconductor quantum structure layer, a second semiconductor composite layer, and a semiconductor quantum dot layer on a substrate in order; thermally treating the semiconductor quantum dot layer so that quantum dots of the semiconductor quantum dot layer are aggregated; and performing an etching process by using the aggregated quantum dots as a mask.Type: ApplicationFiled: November 5, 2012Publication date: January 30, 2014Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Seung Kyu HA, Su Youn KIM, Il Ki HAN, Jin Dong SONG, Won Jun CHOI