Abstract: A display apparatus and a display method thereof are provided. According to an exemplary embodiment, a display method of a display apparatus includes: displaying a plurality of display items corresponding to a plurality of content items comprising a first display item displayed in a first region and remaining display items; displaying the first display item using a first display scheme and displaying the remaining display items using a second display scheme; and in response to sensing a user interaction for moving the display items, changing the display scheme of the first display item while moving the first display item in a direction corresponding to the user interaction, displaying the first display item using the second display scheme and changing the display scheme of second display items of the removing to the first region among the rest display items to the first display scheme.

Abstract: A mobile device is disclosed.

Abstract: A semiconductor device includes a cell array including a source structure, a peripheral circuit, an interconnection structure located between the cell array and the peripheral circuit and electrically coupled to the peripheral circuit, and a decoupling structure configured to prevent a coupling capacitor that occurs between the cell array and the interconnection structure.

Abstract: A deposition apparatus includes a shield member having a lattice shape in a plan view, the lattice shape including short side edges extending along a first direction and long side edges extending along a second direction, the short side edges including first and second short side edges, a bracket member including a first bracket member coupled to the first short side edge, and a second bracket member coupled to the second short side edge, a plurality of anode bars extending along the second direction and stably placed on each of the first bracket member and the second bracket member, and a target member covering the plurality of anode bars. An anode bar of the plurality of anode bars protrudes outward beyond at least one of the first bracket member and the second bracket member, and the anode bar is physically separated from the shield member by the bracket member.

Abstract: A display apparatus includes a display; a communicator configured to communicate with a plurality of external apparatuses, which respectively provide a plurality of contents; and a processor. The processor is configured to: based on receiving information relating to contents among the plurality of contents from external apparatuses, respectively, through the communicator, identify the external apparatuses that transmitted the information, among the plurality of external apparatuses, control the display to display a UI including the contents respectively received from the identified external apparatuses, and control the display to display, on the UI, reproduction states of the contents to be visually distinguishable according to states of inputs of users of the received contents, the inputs being received through the identified external apparatuses, respectively.

Abstract: Proposed is an electromagnetic vibration stirring device of semi-solid high pressure casting equipment. The electromagnetic vibration stirring device includes: a ring-shaped casing including an inner wall into which a sleeve is inserted and an outer wall spaced apart from the inner wall; and a magnetic field generating unit located between the inner wall and the outer wall of the casing, and including a plurality of electromagnets radially arranged at equal intervals around the sleeve in a circumferential direction of the sleeve, each of the electromagnets including a core and a coil surrounding the core. The magnetic field generating unit generates a magnetic field by applying a current to the electromagnets in a clockwise or counterclockwise direction, and each portion of a semi-solid molten metal is sequentially vibrated by the magnetic field along the circumferential direction of the sleeve, thereby controlling a microstructure of the molten metal.

Abstract: A method of manufacturing a semiconductor device includes forming a cell chip including a first substrate, a source layer on the first substrate, a stacked structure on the source layer, and a channel layer passing through the stacked structure and coupled to the source layer, flipping the cell chip, exposing a rear surface of the source layer by removing the first substrate from the cell chip, performing surface treatment on the rear surface of the source layer to reduce a resistance of the source layer, forming a peripheral circuit chip including a second substrate and a circuit on the second substrate, and bonding the cell chip including the source layer with a reduced resistance to the peripheral circuit chip.

Abstract: A semiconductor device includes: an alternating stack that is disposed over a lower structure and includes gate electrodes and dielectric layers which are staked alternately; a memory stack structure that includes a channel layer extending to penetrate through the alternating stack, and a memory layer surrounding the channel layer; a source contact layer in contact with a lower outer wall of the vertical channel layer and disposed between the lower structure and the alternating stack; a source contact plug spaced apart from the memory stack structure and extending to penetrate through the alternating stack; and a sealing spacer suitable for sealing the gate electrodes and disposed between the source contact plug and the gate electrodes. The sealing spacer has an etch resistance that is different from an etch resistance of the dielectric layers.

Abstract: Provided are an augmented reality (AR) remote communication method and system for providing a security function for a 3D space. An AR remote communication method of providing, by a computing device, communication within an AR environment based on an image of a three-dimensional (3D) space whose give area is secured includes obtaining a physical space image of a physical space around a user, setting a 3D security area based on the obtained physical space image, performing security processing for converting the physical space image based on the set 3D security area, and providing a security image generated by performing the security processing.

Abstract: An embodiment battery system includes a battery module comprising a plurality of battery cells, an analog-to-digital (A/D) converter configured to convert voltages of the battery cells to digital signals, a first wireless communication module configured to wirelessly transmit an output signal of the A/D converter, and a battery management unit comprising a second wireless communication module configured to receive a wireless signal transmitted from the first wireless communication module.

Abstract: A deposition apparatus includes a shield member having a lattice shape in a plan view, the lattice shape including short side edges extending along a first direction and long side edges extending along a second direction, the short side edges including first and second short side edges, a bracket member including a first bracket member coupled to the first short side edge, and a second bracket member coupled to the second short side edge, a plurality of anode bars extending along the second direction and stably placed on each of the first bracket member and the second bracket member, and a target member covering the plurality of anode bars. An anode bar of the plurality of anode bars protrudes outward beyond at least one of the first bracket member and the second bracket member, and the anode bar is physically separated from the shield member by the bracket member.

Abstract: An apparatus for and a method of measuring permanent-magnet eddy-current loss is provided. A magnetic flux density measured in a Gaussmeter 60 is fed back to a control device 70, and thus operation of a power supply 80 is automatically controlled. Accordingly, an experiment can be efficiently conducted. A non-magnetic and non-conductive measurement jig 30 blocks heat generated in a permanent magnet sample from being dissipated to an iron core 10. Accordingly, eddy-current loss occurring in the permanent magnet sample 40 can be measured more precisely.

Abstract: A semiconductor device includes a stacked structure including conductive layers and insulating layers alternately stacked with each other, and a channel layer passing through the stacked structure, wherein the channel layer is a single layer, the single layer including a first GIDL region, a cell region, and a second GIDL region, and the first GIDL region has a greater thickness than each of the cell region and the second GIDL region.

Abstract: A method of manufacturing a semiconductor device includes forming a cell chip including a first substrate, a source layer on the first substrate, a stacked structure on the source layer, and a channel layer passing through the stacked structure and coupled to the source layer, flipping the cell chip, exposing a rear surface of the source layer by removing the first substrate from the cell chip, performing surface treatment on the rear surface of the source layer to reduce a resistance of the source layer, forming a peripheral circuit chip including a second substrate and a circuit on the second substrate, and bonding the cell chip including the source layer with a reduced resistance to the peripheral circuit chip.

Abstract: A method of manufacturing a semiconductor device includes forming a stacked structure, forming an opening in the stacked structure, forming a preliminary channel layer in the opening, forming a channel layer by performing heat treatment on the preliminary channel layer, etching an inner surface of the channel layer, and performing ozone (O3) treatment on an etched inner surface of the channel layer.

Abstract: A method for augmented reality content production based on attribute information application according to an embodiment of the present disclosure, as a method for augmented reality content production based on attribute information application by a production application executed by at least one or more processors of a computing device, comprises providing a virtual object authoring space which is a virtual space for authoring a virtual object and includes at least one or more reference objects; providing a virtual object authoring interface for the virtual object authoring space; generating augmentation relationship attribute information based on a virtual object generated based on the provided virtual object authoring interface and at least one reference object of the virtual object authoring space; storing the virtual object by including the generated augmentation relationship attribute information; and displaying the stored virtual object on a reference object in a different space other than the virtual ob

Abstract: A semiconductor device includes a stack including alternately stacked conductive films and insulating films, wherein the stack includes an opening penetrating the conductive films and the insulating films, and wherein the stack includes a rounded corner that is exposed to the opening. The semiconductor device also includes a first channel film formed in the opening and including a first curved surface surrounding the rounded corner. The semiconductor device further includes a conductive pad formed in the opening, and a second channel film interposed between the first curved surface of the first channel film and the conductive pad.

Abstract: A memory device, and a method of manufacturing the same, includes interlayer insulation layers spaced apart from each other and stacked, gate lines formed between the interlayer insulation layers, and a plug vertically passing through the interlayer insulation layers and the gate lines. Each of the gate lines includes a barrier layer formed along an inner wall of the interlayer insulation layer and the plug, a first conductive layer surrounded by the barrier layer, and a second conductive layer surrounded by the first conductive layer. A material of the second conductive layer is different from a material of the first conductive layer, and a size of the second conductive layer is variable along a direction in which the gate lines extend.

Abstract: A method includes calculating whether a quantity of the PMs accumulated in a PF is at or above a risk level at which damage to the PF is caused when reproducing the PF, calculating a driving condition index by accumulating a weighting factor for a driving condition under which there is a likelihood of causing the damage to the PF, when the amount of accumulated PMs is at or above the risk level; calculating a temperature index in accordance with a temperature of the PF and a PM index in accordance with the quantity of the accumulated PMs when the quantity of the accumulated PMs is at or above the risk level; calculating a degradation condition index considering the driving condition index, the temperature of the PF, and the quantity of accumulated PMs; and changing a reproduction periodicity of the PF according to the degradation condition index.

Abstract: A semiconductor apparatus includes a data input buffer configured to generate write data by receiving data that is input through a data input/output unit during a write operation section and configured to generate an output level detection signal by detecting a voltage level of the data I/O unit during a read operation section.