Abstract: A composition for removing edge beads from metal-containing resists, a developer composition of metal-containing resists, and methods of forming patterns using the same are disclosed. The composition according to one or more embodiments includes a C1 to C10 carboxylic acid compound substituted with at least one fluorine; and an organic solvent.

Abstract: A display device includes a display panel in which a first region, a second region, and a third region are defined along a first direction, a window module disposed on the display panel, and including a window substrate, a coating member covering a side surface of the display panel and a side surface of the window module, and a lower substrate disposed under the display panel. A side surface of the window substrate is disposed more inwardly than the side surface of the display panel is, and a side surface of the coating member is connected to the lower substrate.

Abstract: A composition configured for removing edge beads from metal-containing resists and/or as a developer composition of metal-containing resists is water-free and includes an organic solvent and at least one additive selected from among an amino acid-based compound, a sulfur-containing acid compound, and a sulfur-containing amine-based compound. A method of forming patterns using the composition includes coating a metal-containing resist composition on a substrate; coating the composition configured for removing edge beads from metal-containing resists of the present embodiments along edges of the substrate; drying and heating to form a metal-containing resist film on the substrate; exposing the metal-containing photoresist film; and developing the metal-containing resist film with the developer composition of metal-containing resists.

Abstract: Provided is a method of forming patterns which includes coating a metal-containing resist composition on a substrate; drying and heating to form a metal-containing resist film on the substrate; exposing the metal-containing resist film using a patterned mask; and coating a developer composition to remove unexposed regions to form a resist pattern A thickness of the resist film after development is increased by about 5 to about 100% compared to the thickness of the resist film before development, and a surface of the resist film after the development may include about 5 to about 20 at % of at least one selected from a phosphorus element and a sulfur element, based on the total number of atoms.

Abstract: A metal-containing photoresist developer composition includes an organic solvent, and a sulfonimide-based compound. A method of forming patterns utilizing the developer composition includes: coating a metal-containing resist composition on a substrate; coating a composition for removing edge beads from a metal-containing resist along an edge of the substrate; drying and heating the resultant to form a metal-containing resist layer on the substrate; exposing the metal-containing resist layer; and coating the metal-containing photoresist developer composition and developing the metal-containing photoresist developer composition.

Abstract: A composition for removing edge beads from metal-containing resists, and a method of forming patterns including a step of removing edge beads using the composition are provided. The composition for removing edge beads includes an additive including at least one selected from among phosphoric acid, a phosphorous acid-based compound, and a hypophosphorous acid-based compound, and a carboxylic acid-based compound, and an organic solvent, where a mixed weight ratio of the at least one selected from among the phosphoric acid, the phosphorous acid-based compound, and the hypophosphorous acid-based compound to the carboxylic acid-based compound is about 9:1 to about 1.2:1.

Abstract: According to the present disclosure, the relation between the MeCP2 expression level and depression in D2R neurons of the ventral striatum was first found, and it was confirmed that MeCP2 in D2R neurons of the ventral striatum was significantly decreased due to depressive symptoms, and depressive symptoms were improved when MeCP2 expression in the neurons was up-regulated. Accordingly, the expression level of MeCP2 in D2R neurons of the ventral striatum is provided as a biomarker for diagnosing depression and the up-regulation of the MeCP2 expression is provided as a treatment strategy for depression, and thus, it is expected to be useful as a development platform for drugs for preventing or treating depression in the future.

Abstract: A metal-containing photoresist developer composition includes an organic solvent, and at least one additive selected from a phosphorous acid-based compound, a hypophosphorous acid-based compound, a sulfurous acid-based compound, and a hydroxamic acid-based compound, wherein the additive is included in an amount of about 0.0001 wt % to less than about 1.0 wt %. A method of forming patterns includes step of developing a metal-containing photoresist film using the metal-containing photoresist developer composition.

Abstract: A display device is provided. A display device includes a display panel including a plurality of connecting signal wires which supply different control voltages; a flexible printed circuit board attached to a side surface of the display panel and including a base film and a plurality of lead wires which are disposed on the base film; an anisotropic conductive film disposed between the plurality of connecting signal wires and the plurality of lead wires, and at least one bump wire disposed between adjacent connecting signal wires, the at least one bump wire being not supplied with the different control voltages controlling the display panel.

Abstract: A display device includes a display panel including a first non-folding region, a folding region, and a second non-folding region, a protective film below the display panel, and an adhesive layer between the display panel and the protective film, and a cutout portion, passing through an entirety of the protective film in a thickness direction and at least a portion of the adhesive layer in the thickness direction, is defined.

Abstract: Provided is a composition for forming a silica layer, the composition containing a silicon-containing polymer and a solvent, wherein a silica layer formed of the composition for forming the silica layer satisfies Relation 1. The definition of Relation 1 is as described in the specification. The definition of Relation 1 is the same as described in the specification.

Abstract: Disclosed is a composition for forming a silica layer including perhydropolysilazane (PHPS) and a solvent, wherein in an 1H-NMR spectrum of the perhydropolysilazane (PHPS) in CDCl3, when a peak derived from N3SiH1 and N2SiH2 is referred to as Peak 1 and a peak derived from NSiH3 is referred to as Peak 2, a ratio (P1/(P1+P2)) of an area (P1) of Peak 1 relative to a total area (P1+P2) of the Peak 1 and Peak 2 is greater than or equal to 0.77, and when an area from a minimum point between the peaks of Peak 1 and Peak 2 to 4.78 ppm is referred to as a Region B and an area from 4.78 ppm to a minimum point of Peak 1 is referred to as a Region A of the area of Peak 1, a ratio (PA/PB) of an area (PA) of Region A relative to an area (PB) of Region B is greater than or equal to about 1.5.

Abstract: Provided is a composition for forming a silica layer including a silicon-containing polymer, and a solvent, wherein the silicon-containing polymer has a weight average molecular weight (Mw) of 8,000 g/mol to 15,000 g/mol, and wherein a content of nitrogen atoms of the silicon-containing polymer measured by a kjeldahl titration method is 25 wt % to 30 wt % based on a total weight of the silicon-containing polymer.

Abstract: Provided are a composition for forming a silica layer including a silicon-containing polymer and a solvent, wherein when adding 70 g of the composition for forming the silica layer to a 100 ml container, leaving it at 40° C. for 28 days, and taking 1 ml of gas generated from the composition, 1 ml of the gas includes hydrogen gas (H2), silane gas (SiH4), and ammonia gas (NH3), and the hydrogen gas, silane gas, and ammonia gas satisfy Equation 1: [(hydrogen gas amount (ppm))/(silane gas amount (ppm)+ammonia gas amount (ppm))?1.5], a silica layer manufactured therefrom, and an electronic device including the silica layer.

Abstract: A display device is provided. A display device includes a display panel including a plurality of connecting signal wires which supply different control voltages; a flexible printed circuit board attached to a side surface of the display panel and including a base film and a plurality of lead wires which are disposed on the base film; an anisotropic conductive film disposed between the plurality of connecting signal wires and the plurality of lead wires, and at least one bump wire disposed between adjacent connecting signal wires, the at least one bump wire being not supplied with the different control voltages controlling the display panel.

Abstract: Provided is a composition for forming a silica layer, the composition containing a silicon-containing polymer and a solvent, wherein a silica layer formed of the composition for forming the silica layer satisfies Relation 1. The definition of Relation 1 is as described in the specification. The definition of Relation 1 is the same as described in the specification.

Abstract: Disclosed is a composition for forming a silica layer including perhydropolysilazane (PHPS) and a solvent, wherein in an 1H-NMR spectrum of the perhydropolysilazane (PHPS) in CDCl3, when a peak derived from N3SiH1 and N2SiH2 is referred to as Peak 1 and a peak derived from NSiH3 is referred to as Peak 2, a ratio (P1/(P1+P2)) of an area (P1) of Peak 1 relative to a total area (P1+P2) of the Peak 1 and Peak 2 is greater than or equal to 0.77, and when an area from a minimum point between the peaks of Peak 1 and Peak 2 to 4.78 ppm is referred to as a Region B and an area from 4.78 ppm to a minimum point of Peak 1 is referred to as a Region A of the area of Peak 1, a ratio (PA/PB) of an area (PA) of Region A relative to an area (PB) of Region B is greater than or equal to about 1.5.

Abstract: A composition for forming a silica layer includes a silicon-containing polymer and a solvent, the composition having a SiO2 conversion rate of greater than about 0 and less than or equal to about 15. The SiO2 conversion rate is represented by: SiO2 conversion rate=(a ratio of an area of Si—O to an area of Si—H measured after coating the composition in a thickness of 6700 ? on a bare wafer, and allowing the coated wafer to stand for 24 hours under conditions of a temperature of 85° C. and a relative humidity of 85%)?(a ratio of an area of Si—O to an area of Si—H measured after coating the composition in a thickness of 6700 ? on a bare wafer, and allowing the coated wafer to stand for 2 hours under conditions of a temperature of 85° C. and a relative humidity of 85%).

Abstract: A composition for forming a silica based layer, the composition including a silicon-containing polymer having polydispersity ranging from about 3.0 to about 30 and a solvent, and having viscosity ranging from about 1.30 centipoise (cps) to about 1.80 cps at 25° C. Also, a silica based layer is formed of the composition, and an electronic device includes the silica based layer.

Abstract: A composition for forming a silica layer includes a silicon-containing polymer and a solvent, the composition having a SiO2 conversion rate of greater than about 0 and less than or equal to about 15. The SiO2 conversion rate is represented by: SiO2 conversion rate=(a ratio of an area of Si—O to an area of Si—H measured after coating the composition in a thickness of 6700 ? on a bare wafer, and allowing the coated wafer to stand for 24 hours under conditions of a temperature of 85° C. and a relative humidity of 85%)?(a ratio of an area of Si—O to an area of Si—H measured after coating the composition in a thickness of 6700 ? on a bare wafer, and allowing the coated wafer to stand for 2 hours under conditions of a temperature of 85° C. and a relative humidity of 85%).