Abstract: Disclosed is a composite for forming a coacervate interfacial film. The composite for forming the coacervate interfacial film contains a cationic hectorite nanoplate-shaped particle structure containing a hectorite nanoplate-shaped particle and a cationic surfactant coupled to a surface of the hectorite nanoplate-shaped particle, and an anionic cellulose nanofibril containing an anionic functional group in at least a portion thereof, in which the composite may form the coacervate interfacial film at an interface of an oil phase and a water phase through electrostatic interaction between the cationic surfactant and the anionic functional group.

Abstract: A metal-containing photoresist developer composition includes an organic solvent, and at least one additive selected from a phosphorous acid-based compound, a hypophosphorous acid-based compound, a sulfurous acid-based compound, and a hydroxamic acid-based compound, wherein the additive is included in an amount of about 0.0001 wt % to less than about 1.0 wt %. A method of forming patterns includes step of developing a metal-containing photoresist film using the metal-containing photoresist developer composition.

Abstract: A display device is provided. A display device includes a display panel including a plurality of connecting signal wires which supply different control voltages; a flexible printed circuit board attached to a side surface of the display panel and including a base film and a plurality of lead wires which are disposed on the base film; an anisotropic conductive film disposed between the plurality of connecting signal wires and the plurality of lead wires, and at least one bump wire disposed between adjacent connecting signal wires, the at least one bump wire being not supplied with the different control voltages controlling the display panel.

Abstract: A display device includes a display panel including a first non-folding region, a folding region, and a second non-folding region, a protective film below the display panel, and an adhesive layer between the display panel and the protective film, and a cutout portion, passing through an entirety of the protective film in a thickness direction and at least a portion of the adhesive layer in the thickness direction, is defined.

Abstract: Provided is a composition for forming a silica layer, the composition containing a silicon-containing polymer and a solvent, wherein a silica layer formed of the composition for forming the silica layer satisfies Relation 1. The definition of Relation 1 is as described in the specification. The definition of Relation 1 is the same as described in the specification.

Abstract: Disclosed is a composition for forming a silica layer including perhydropolysilazane (PHPS) and a solvent, wherein in an 1H-NMR spectrum of the perhydropolysilazane (PHPS) in CDCl3, when a peak derived from N3SiH1 and N2SiH2 is referred to as Peak 1 and a peak derived from NSiH3 is referred to as Peak 2, a ratio (P1/(P1+P2)) of an area (P1) of Peak 1 relative to a total area (P1+P2) of the Peak 1 and Peak 2 is greater than or equal to 0.77, and when an area from a minimum point between the peaks of Peak 1 and Peak 2 to 4.78 ppm is referred to as a Region B and an area from 4.78 ppm to a minimum point of Peak 1 is referred to as a Region A of the area of Peak 1, a ratio (PA/PB) of an area (PA) of Region A relative to an area (PB) of Region B is greater than or equal to about 1.5.

Abstract: Provided is a composition for forming a silica layer including a silicon-containing polymer, and a solvent, wherein the silicon-containing polymer has a weight average molecular weight (Mw) of 8,000 g/mol to 15,000 g/mol, and wherein a content of nitrogen atoms of the silicon-containing polymer measured by a kjeldahl titration method is 25 wt % to 30 wt % based on a total weight of the silicon-containing polymer.

Abstract: Provided are a composition for forming a silica layer including a silicon-containing polymer and a solvent, wherein when adding 70 g of the composition for forming the silica layer to a 100 ml container, leaving it at 40° C. for 28 days, and taking 1 ml of gas generated from the composition, 1 ml of the gas includes hydrogen gas (H2), silane gas (SiH4), and ammonia gas (NH3), and the hydrogen gas, silane gas, and ammonia gas satisfy Equation 1: [(hydrogen gas amount (ppm))/(silane gas amount (ppm)+ammonia gas amount (ppm))?1.5], a silica layer manufactured therefrom, and an electronic device including the silica layer.

Abstract: A display device is provided. A display device includes a display panel including a plurality of connecting signal wires which supply different control voltages; a flexible printed circuit board attached to a side surface of the display panel and including a base film and a plurality of lead wires which are disposed on the base film; an anisotropic conductive film disposed between the plurality of connecting signal wires and the plurality of lead wires, and at least one bump wire disposed between adjacent connecting signal wires, the at least one bump wire being not supplied with the different control voltages controlling the display panel.

Abstract: Provided is a composition for forming a silica layer, the composition containing a silicon-containing polymer and a solvent, wherein a silica layer formed of the composition for forming the silica layer satisfies Relation 1. The definition of Relation 1 is as described in the specification. The definition of Relation 1 is the same as described in the specification.

Abstract: Disclosed is a composition for forming a silica layer including perhydropolysilazane (PHPS) and a solvent, wherein in an 1H-NMR spectrum of the perhydropolysilazane (PHPS) in CDCl3, when a peak derived from N3SiH1 and N2SiH2 is referred to as Peak 1 and a peak derived from NSiH3 is referred to as Peak 2, a ratio (P1/(P1+P2)) of an area (P1) of Peak 1 relative to a total area (P1+P2) of the Peak 1 and Peak 2 is greater than or equal to 0.77, and when an area from a minimum point between the peaks of Peak 1 and Peak 2 to 4.78 ppm is referred to as a Region B and an area from 4.78 ppm to a minimum point of Peak 1 is referred to as a Region A of the area of Peak 1, a ratio (PA/PB) of an area (PA) of Region A relative to an area (PB) of Region B is greater than or equal to about 1.5.

Abstract: A composition for forming a silica layer includes a silicon-containing polymer and a solvent, the composition having a SiO2 conversion rate of greater than about 0 and less than or equal to about 15. The SiO2 conversion rate is represented by: SiO2 conversion rate=(a ratio of an area of Si—O to an area of Si—H measured after coating the composition in a thickness of 6700 ? on a bare wafer, and allowing the coated wafer to stand for 24 hours under conditions of a temperature of 85° C. and a relative humidity of 85%)?(a ratio of an area of Si—O to an area of Si—H measured after coating the composition in a thickness of 6700 ? on a bare wafer, and allowing the coated wafer to stand for 2 hours under conditions of a temperature of 85° C. and a relative humidity of 85%).

Abstract: A composition for forming a silica based layer, the composition including a silicon-containing polymer having polydispersity ranging from about 3.0 to about 30 and a solvent, and having viscosity ranging from about 1.30 centipoise (cps) to about 1.80 cps at 25° C. Also, a silica based layer is formed of the composition, and an electronic device includes the silica based layer.

Abstract: A composition for forming a silica layer includes a silicon-containing polymer and a solvent, the composition having a SiO2 conversion rate of greater than about 0 and less than or equal to about 15. The SiO2 conversion rate is represented by: SiO2 conversion rate=(a ratio of an area of Si—O to an area of Si—H measured after coating the composition in a thickness of 6700 ? on a bare wafer, and allowing the coated wafer to stand for 24 hours under conditions of a temperature of 85° C. and a relative humidity of 85%)?(a ratio of an area of Si—O to an area of Si—H measured after coating the composition in a thickness of 6700 ? on a bare wafer, and allowing the coated wafer to stand for 2 hours under conditions of a temperature of 85° C. and a relative humidity of 85%).

Abstract: A method of forming patterns, patterns formed according to the method, and a semiconductor device including the patterns, the method including forming an etching subject layer on a substrate, forming a first layer on the etching subject layer such that the first layer has a projecting pattern, forming a second layer such that the second layer completely covers the projecting pattern of the first layer, partially removing the second layer such that a top of the projecting pattern is exposed and a patterned second layer remains at a side of the projecting pattern, removing the first layer such that a top of the etching subject layer is exposed, and etching the etching subject layer using the patterned second layer as an etching mask, wherein one of the first layer and the second layer is a carbon-containing layer and the other is a silicon-containing layer, and the silicon-containing layer is formed by coating a silicon-containing composition and heat-treating the same.

Abstract: A composition for forming a silica layer includes a silicon-containing polymer and a mixed solvent including at least two solvents, wherein the mixed solvent has a surface tension of about 5 mN/m to about 35 mN/m at a temperature of about 25° C.

Abstract: A composition for forming a silica based layer includes a silicon-containing compound including polysilazane, polysiloxazane, or a combination thereof and one or more kinds of solvent, and having a turbidity increasing rate of less than or equal to about 0.13.

Abstract: A method of forming patterns, patterns formed according to the method, and a semiconductor device including the patterns, the method including forming an etching subject layer on a substrate, forming a first layer on the etching subject layer such that the first layer has a projecting pattern, forming a second layer such that the second layer completely covers the projecting pattern of the first layer, partially removing the second layer such that a top of the projecting pattern is exposed and a patterned second layer remains at a side of the projecting pattern, removing the first layer such that a top of the etching subject layer is exposed, and etching the etching subject layer using the patterned second layer as an etching mask, wherein one of the first layer and the second layer is a carbon-containing layer and the other is a silicon-containing layer, and the silicon-containing layer is formed by coating a silicon-containing composition and heat-treating the same.

Abstract: A composition for forming a silica layer including a silicon-containing polymer having a weight average molecular weight of about 20,000 to about 70,000 and a polydispersity index of about 5.0 to about 17.0 and a solvent; a silica layer manufactured using the same; and an electronic device including the silica layer.

Abstract: A composition for forming silica layer includes a silicon-containing polymer and a solvent, wherein a weight average molecular weight of the silicon-containing polymer ranges from about 2,000 to about 100,000 and a branching ratio (a) of the silicon-containing polymer calculated by Equation 1 ranges from about 0.25 to about 0.50. ?=k·Ma??[Equation 1] In Equation 1, ? is an intrinsic viscosity of a silicon-containing polymer, M is an absolute molecular weight of a silicon-containing polymer, a is a branching ratio, and k is an intrinsic constant.