Abstract: A composition for forming a silica layer including a silicon-containing polymer having a weight average molecular weight of about 20,000 to about 70,000 and a polydispersity index of about 5.0 to about 17.0 and a solvent; a silica layer manufactured using the same; and an electronic device including the silica layer.

Abstract: A method of preparing a gap filler agent includes adding a halosilane to a basic solvent, and, to the basic solvent and the halosilane, adding ammonia in an amount of about 50 to about 70 parts by weight based on 100 parts by weight of the halosilane at a rate of about 1 g/hr to about 15 g/hr.

Abstract: A composition for forming a silica based layer and a method for manufacturing a silica based layer, the composition including a silicon-containing compound, the silicon-containing compound including a hydrogenated polysilazane moiety, a hydrogenated polysiloxazane moiety, or a combination thereof, and a solvent, wherein a number of particles of the silicon-containing compound in the composition and having a particle diameter of about 0.2 ?m to about 1 ?m is less than or equal to about 10/ml.

Abstract: Disclosed is a composition for a silica-based insulation layer including hydrogenated polysilazane or hydrogenated polysiloxzane, wherein a concentration of a cyclic compound having a weight average molecular weight of less than 400 is less than or equal to 1,200 ppm. The composition for a silica-based insulation layer may reduce a thickness distribution during formation of a silica-based insulation layer, and thereby film defects after chemical mechanical polishing (CMP) during a semiconductor manufacturing process may be reduced.

Abstract: Disclosed is modified hydrogenated polysiloxazane prepared by reacting hydrogenated polysiloxazane with a silane compound selected from polysilane, polycyclosilane, and a silane oligomer. The modified hydrogenated polysiloxazane has a small mole ratio of nitrogen atoms relative to silicon atoms and may remarkably deteriorate a film shrinkage ratio when included in a composition for forming a silica-based insulation layer to form a silica-based insulation layer.

Abstract: A composition for forming silica-based insulation layer includes a hydrogenated polysiloxazane including a moiety represented by the following Chemical Formula 1 and a moiety represented by the following Chemical Formula 2, and having a chlorine concentration of about 1 ppm or less:

Abstract: A composition for forming a silica layer, a method of manufacturing the composition, a silica layer prepared using the composition, and a method of manufacturing the silica layer, the composition including hydrogenated polysilazane, hydrogenated polysiloxazane, or a combination thereof, wherein a concentration of a sum of hydrogenated polysilazane and hydrogenated polysiloxazane having a weight average molecular weight, reduced to polystyrene, of greater than or equal to about 50,000 is about 0.1 wt % or less, based on a total amount of the hydrogenated polysilazane and hydrogenated polysiloxazane.

Abstract: A composition for a silica based layer, a silica based layer, and a method of manufacturing a silica based layer, the composition including a solvent; and a silicon-containing polymer, the silicon-containing polymer having a weight average molecular weight of about 20,000 to about 160,000.

Abstract: Provided is a rinse solution for a hydrogenated polysiloxazane thin film including an additive selected from an alcohol-based solvent, an ester-based solvent, a silanol-based solvent, an alkoxysilane-based solvent, an alkylsilazane-based solvent, and a combination thereof in an amount of 0.01 wt % to 7 wt % based on the total amount of the rinse solution.

Abstract: A rinse liquid for an insulation layer, the rinse liquid including a solvent represented by the following Chemical Formula 1:

Abstract: A method of preparing a gap filler agent includes adding a halosilane to a basic solvent, and, to the basic solvent and the halosilane, adding ammonia in an amount of about 50 to about 70 parts by weight based on 100 parts by weight of the halosilane at a rate of about 1 g/hr to about 15 g/hr.

Abstract: A filler for filling a gap includes a compound represented by the following Chemical Formula 1. SiaNbOcHd.??[Chemical Formula 1] In Chemical Formula 1, a, b, c, and d represent relative amounts of Si, N, 0, and H, respectively, in the compound, 1.96<a<2.68, 1.78<b<3.21, 0?c<0.19, and 4<d<10.

Abstract: A compound for filling small gaps in a semiconductor device and a composition comprising the compound are provided. The composition can completely fill holes having a diameter of 70 nm or less and an aspect ratio (i.e. height/diameter ratio) of 1 or more in a semiconductor substrate without any defects, e.g., air voids, by a general spin coating technique. In addition, the composition can be completely removed from holes at a controllable rate without leaving any residue by the treatment with a hydrofluoric acid solution after being cured by baking. Furthermore, the composition is highly stable during storage.

Abstract: A filler for filling a gap includes a compound represented by the following Chemical Formula 1. [Chemical Formula 1] SiaNbOcHd. In Chemical Formula 1, a, b, c, and d represent relative amounts of Si, N, O, and H, respectively, in the compound, 1.96<a<2.68, 1.78<b<3.21, 0?c<0.19, and 4<d<10.

Abstract: A polymer for gap-filling in a semiconductor device, the polymer being prepared by polycondensation of hydrolysates of the compound represented by Formula 1, the compound represented by Formula 2, and one or more compounds represented by Formulae 3 and 4: [RO]3Si—[CH2]n—Si[OR]3??(1) wherein n is from 0 to 2 and each R is independently a C1-C6 alkyl group; [RO]3Si—[CH2]nX??(2) wherein X is a C6-C12 aryl group, n is from 0 to 2, and R is a C1-C6 alkyl group; [RO]3Si—R???(3) wherein R and R? are independently a C1-C6 alkyl group; and [RO]3Si—H??(4) wherein R is a C1-C6 alkyl group.

Abstract: A composition for forming silica-based insulation layer includes a hydrogenated polysiloxazane including a moiety represented by the following Chemical Formula 1 and a moiety represented by the following Chemical Formula 2, and having a chlorine concentration of about 1 ppm or less:

Abstract: A composition for forming a silica layer, a method of manufacturing the composition, a silica layer prepared using the composition, and a method of manufacturing the silica layer, the composition including hydrogenated polysilazane, hydrogenated polysiloxazane, or a combination thereof, wherein a concentration of a sum of hydrogenated polysilazane and hydrogenated polysiloxazane having a weight average molecular weight, reduced to polystyrene, of greater than or equal to about 50,000 is about 0.1 wt % or less, based on a total amount of the hydrogenated polysilazane and hydrogenated polysiloxazane.

Abstract: A filler for filling a gap includes a hydrogenated polysiloxazane having an oxygen content of about 0.2 to about 3 wt %. A chemical structure of the hydrogenated polysiloxazane includes first, second, and third moieties represented by the following respective Chemical Formulas 1-3: The third moiety is on a terminal end of the hydrogenated polysiloxazane, and an amount of the third moiety is about 15 to about 35% based on a total amount of Si—H bonds in the hydrogenated polysiloxazane.

Abstract: A filler for filling a gap includes a hydrogenated polysiloxazane having an oxygen content of about 0.2 to about 3 wt %.

Abstract: A polymer for gap-filling in a semiconductor device, the polymer being prepared by polycondensation of hydrolysates of the compound represented by Formula 1, the compound represented by Formula 2, and one or more compounds represented by Formulae 3 and 4: [RO]3Si—[CH2]n—Si[OR]3??(1) wherein n is from 0 to 2 and each R is independently a C1-C6 alkyl group; [RO]3Si—[CH2]nX??(2) wherein X is a C6-C12 aryl group, n is from 0 to 2, and R is a C1-C6 alkyl group; [RO]3Si—R???(3) wherein R and R? are independently a C1-C6 alkyl group; and [RO]3Si—H??(4) wherein R is a C1-C6 alkyl group.