Patents by Inventor Jin Hong Kim

Jin Hong Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20040102989
    Abstract: Disclosed is an online digital photograph processing system allowing a customer of a lodging house and an amusement park to receive and see a photograph captured by a rented digital camera through an online communication means or a television (TV). To this end, the customer rents a digital camera terminal for wirelessly transmitting image data of a digital photograph captured by the customer, together with data of the terminal's identification number. An access point device receives the transmitted data and transmits it to a central management center through an intranet.
    Type: Application
    Filed: July 3, 2003
    Publication date: May 27, 2004
    Inventors: Yang-Su Jang, Seung-Hwan Kim, Jin-Hong Kim, Sung-Hoon Lee
  • Patent number: 6724715
    Abstract: An optical recording medium improves recording density at a simple structure by forming an optical reaction layer, which transmits a laser beam at a predetermined temperature, on or below of a recording layer.
    Type: Grant
    Filed: February 11, 2000
    Date of Patent: April 20, 2004
    Assignee: LG Electronics Inc.
    Inventors: Jin Hong Kim, Chul Park
  • Publication number: 20040047280
    Abstract: Disclosed is an optical disk. The present invention includes a plate having a first area enabling to record information thereon and a second area unable to record the information thereon and a projection on the second area of the plate. Accordingly, the present invention enables to form a protecting layer having a uniform thickness thereon.
    Type: Application
    Filed: April 21, 2003
    Publication date: March 11, 2004
    Inventors: Seoung Won Lee, Hun Seo, Jun Seok Lee, Jin Hong Kim, Kyung Chan Park
  • Publication number: 20030195760
    Abstract: The present invention provides a system for enabling services to a visitor to an entertainment park. In particular, the present invention increases the visiting time, as well as spending, of a visitor to an entertainment park while maximizing the visitor's satisfaction and creating new demand for both park services and return visits. The system includes a content unit and portable service device. The content unit includes a memory device for storing the content and a connection unit for allowing the memory device to be accessed from the external device.
    Type: Application
    Filed: July 2, 2002
    Publication date: October 16, 2003
    Inventors: Jin-Hong Kim, Yun-Il Kook
  • Publication number: 20030122962
    Abstract: A digital broadcast receiving device and method thereof is capable of synchronizing text data to currently broadcasting video data and/or audio data and displaying the same. The digital broadcast receiving device has a text data reading unit for reading a text data from a bit stream of a digital broadcast program; a text data synchronizing unit for synchronizing the read text data to currently-broadcasting video data and/or audio data; and a text data outputting unit for outputting, thus displaying the read text data on a display. The text data outputting unit outputs the read text data such that certain portion that is synchronized to the currently broadcasting video data and/or audio data can be distinguished among others. As a result, viewers can catch the intended information immediately even when the information is ETT text data that contains a large amount of information.
    Type: Application
    Filed: January 2, 2003
    Publication date: July 3, 2003
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Jin-hong Kim
  • Publication number: 20030124792
    Abstract: Methods for fabricating semiconductor devices having capacitors are provided. A plurality of storage node electrodes are formed on a semiconductor substrate. Then, a capacitor dielectric layer is formed over the storage node electrodes. A plate electrode layer is subsequently formed on the capacitor dielectric layer. A hard mask layer is then formed on the resultant structure where the plate electrode layer is formed so as to fill a gap between the adjacent storage node electrodes. The hard mask layer and the plate electrode layer are successively patterned to form a plate electrode.
    Type: Application
    Filed: December 17, 2002
    Publication date: July 3, 2003
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Jeong-Sic Jeon, Chang-Jin Kang, Seung-Young Son, Jin-Hong Kim
  • Publication number: 20030118724
    Abstract: A recording medium surface coating apparatus includes: a medium mounting unit having a rotational shaft and a mounting surface with a plurality of medium mounting recesses in which a recording medium is mounted, the medium mounting unit being coupled to the rotational shaft and rotated; a coating material supply unit installed along the rotational shaft and supplying a coating material to the surface of the recording medium; and a driving unit for rotating the medium mounting unit.
    Type: Application
    Filed: December 18, 2002
    Publication date: June 26, 2003
    Applicant: LG Electronics Inc.
    Inventor: Jin-Hong Kim
  • Publication number: 20030017261
    Abstract: The present invention relates to a polymer for data storage that is sensitive to a light source, a data storage media coated by the same, and a data storage device and method using the data storage media. In particular, the present invention relates to a polymer for data storage comprising two of the functional group of disperse red 1, which is a photoresponsive organic dye, bonded to a branched chain per every repeat unit a data storage media coated by the same, a reversible and optical data storage device containing a thin film, and a data storage method using the device.
    Type: Application
    Filed: April 12, 2001
    Publication date: January 23, 2003
    Inventors: Yang Kyoo Han, Bong Cheol Kim, Bong Soo Ko, Jin Hong Kim, Hai Sub Na, Ki Myung Hong
  • Patent number: 6355219
    Abstract: The present invention relates to a method of containing nickel into the alumina aerogel prepared by sol-gel method and supercritical drying and of preparing the nickel-alumina hybrid aerogel catalyst. The nickel-alumina catalyst prepared in the present invention has an excellent reactivity with a prolonged lifetime.
    Type: Grant
    Filed: December 21, 2000
    Date of Patent: March 12, 2002
    Assignee: Korea Institute of Science and Technology
    Inventors: Dong Jin Suh, Tae Jin Park, Young Hyun Yoon, Jin Hong Kim
  • Publication number: 20010050354
    Abstract: The present invention relates to a method of containing nickel into the alumina aerogel prepared by sol-gel method and supercritical drying and of preparing the nickel-alumina hybrid aerogel catalyst. The nickel-alumina catalyst prepared in the present invention has an excellent reactivity with a prolonged lifetime.
    Type: Application
    Filed: December 21, 2000
    Publication date: December 13, 2001
    Applicant: KOREA INSTITUTE OF TECHNOLOGY
    Inventors: Dong Jin Suh, Tae Jin Park, Young Hyun Yoon, Jin Hong Kim
  • Patent number: 6284146
    Abstract: An etching gas mixture for a transition metal thin film, and an etching method using the etching gas mixture are provided. The etching gas mixture is composed of two gases. The first gas is one selected from the group consisting of halogen gas, halide gas, halogen gas mixture, halide gas mixture and gas mixture of halogen and halide. The second gas is one selected from the group consisting of carbon oxide gas, hydrocarbon gas, nitrogen oxide gas and nitrogen-containing gas. The etching gas mixture reacts with the transition metal thin film to form a highly volatile metal halide, so that a fine pattern can be formed with a high selectivity.
    Type: Grant
    Filed: July 28, 2000
    Date of Patent: September 4, 2001
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jin-hong Kim, Seong-ihl Woo
  • Publication number: 20010014606
    Abstract: A method which can allow subscribers to select an international telephone service provider and appropriately provide a wireless communication service to a mobile station subscribed to a foreign wireless communication system is disclosed. The method includes the steps of: a) storing information as to whether the international roaming mobile station subscribes to an international roaming service in a subscriber profile of the mobile station; b) storing MSC IDs in a database of HLR; c) determining whether a REGNOT message is from an MSC of a home system based on the MSC IDs stored in the database when the REGNOT message is inputted from the MSC to the HLR; and d) sending information as to whether the international roaming mobile station subscribes to the international roaming service to the MSC based on the subscriber information when the RENOT message is not from the home system.
    Type: Application
    Filed: December 14, 2000
    Publication date: August 16, 2001
    Inventor: Jin-Hong Kim
  • Patent number: 6271170
    Abstract: The present invention relates to a method of containing nickel into the alumina aerogel prepared by sol-gel method and supercritical drying and of preparing the nickel-alumina hybrid aerogel catalyst. The nickel-alumina catalyst prepared in the present invention has an excellent reactivity with a prolonged lifetime.
    Type: Grant
    Filed: January 5, 1999
    Date of Patent: August 7, 2001
    Assignee: Korea Institute of Science and Technology
    Inventors: Dong Jin Suh, Tai Jin Park, Young Hyun Yoon, Jin Hong Kim
  • Patent number: 6141297
    Abstract: Magneto-optical recording medium having a reproduction layer of multilayer wherein a multilayer of magnetic/non-magnetic layers is used as the reproduction layer or a recording layer in MSR or MAMMOS magneto-optical disk and thicknesses of layers in the multilayer are adjusted or a noble metal intermediate layer is introduced between the reproduction layer and the recording layer for improving a signal quality with an improvement of a resolution, thereby allowing application, not only to a red region with long wavelengths, but also to a blue region with short wavelengths, permitting a wide use and suitable for a high density disk.
    Type: Grant
    Filed: March 8, 1999
    Date of Patent: October 31, 2000
    Assignee: LG Electronics Inc.
    Inventor: Jin-Hong Kim
  • Patent number: 5693546
    Abstract: Methods of forming field effect transistors include the steps of forming a composite of layers including an amorphous silicon layer (a--Si), a silicon dioxide layer thereon and a silicon nitride layer on the silicon dioxide layer. A polycrystalline silicon conductive layer is then formed on the silicon nitride layer by depositing and patterning polycrystalline silicon. The polycrystalline silicon conductive layer is then oxidized using thermal oxidation techniques to form an oxide outerlayer. During this step, a portion of the polycrystalline silicon conductive layer will be consumed to define a gate electrode. Dopants of first conductivity type are then implanted into a top surface of the silicon nitride layer, using the oxide outerlayer and the gate electrode as a mask, to form relatively lightly doped preliminary source and drain regions in the amorphous silicon layer. The oxide outerlayer is then removed preferably using a buffered oxide etchant (BOE) solution which does not etch silicon nitride.
    Type: Grant
    Filed: June 6, 1996
    Date of Patent: December 2, 1997
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Byeong-Yun Nam, Sang-Won Lee, Jin-Hong Kim
  • Patent number: 5677206
    Abstract: A poly-silicon thin film transistor having LDD structure which has very low source/drain resistance is described. A TFT according to a preferred embodiment of the present invention, has, on a substrate, an active poly-silicon layer with a heavily-doped region on an outer peripheral thereof, a lightly doped region on ban inside the outer peripheral band and an un-doped region on a center part thereof. A gate insulating layer is comprised of a lower oxide layer, a nitride layer and an upper oxide layer. The lower oxide layer is formed over the whole active poly-silicon layer, but the nitride layer and the upper oxide layer are formed only on the un-doped portions of the active poly-silicon layer. A gate electrode is then formed on the upper oxide layer. A method for forming this structure is also described, which method uses a dry etch to remove the upper oxide layer and the nitride layer, but not the lower oxide layer prior to ion implantation of the active region.
    Type: Grant
    Filed: February 26, 1996
    Date of Patent: October 14, 1997
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Joo-Hyung Lee, Suk-Bum Mah, Jin-Hong Kim
  • Patent number: 5591675
    Abstract: An interconnecting method for a semiconductor device is disclosed in which a conductive layer containing aluminum is formed on a lower structure formed on a substrate. An insulating layer is formed on the conductive layer. A photoresist pattern for defining a portion where an opening is to be made is formed on the insulating layer. Then, the insulating layer is isotropically etched by wet etching with the photoresist pattern as an etching mask. The insulating layer remaining after the isotropical etching is taper-etched by RIE to form the opening. To ensure that the conductive layer is exposed by the opening, the resultant structure is overetched by using a mixed gas of fluorocarbon-containing gas and oxygen. This resultant structure is RIE-sputtered using fluorocarbon-containing gas such that polymer or nonvolatile by-products generated when the opening such as a via hole is formed, are completely removed.
    Type: Grant
    Filed: December 22, 1994
    Date of Patent: January 7, 1997
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae-woo Kim, Joon Kim, Jin-hong Kim
  • Patent number: 5252177
    Abstract: A method for forming a multilayer wiring, in a method for manufacturing a semiconductor device, is disclosed. The method comprises: forming a contact hole 33 on the surface of a conductive layer 29 by a photolithography, removing a photoresist by using plasma ashing at a predetermined temperature, pressure and amount of oxygen per unit cubic, and simultaneously forming a protective layer 35 consisting of a oxide layer on the surface of the exposed conductive layer. Thus, damage of the surface of wiring caused by the chemical reaction of an organic solvent and water in the subsequent process thereof, is prevented, to provide high density and high speed semiconductor integrated circuit whose electrode characteristics between two wiring layers is improved.
    Type: Grant
    Filed: July 29, 1991
    Date of Patent: October 12, 1993
    Assignee: SamSung Electronics Co., Ltd.
    Inventors: Jong-Seo Hong, Jin-Hong Kim, Jung-In Hong
  • Patent number: 5234864
    Abstract: A method for interconnecting layers in a semiconductor device is disclosed. The device includes a lower conductive layer formed by capping a second conductive layer on a first conductive layer, a contact window formed in an inter-insulating layer on the lower conductive layer, and an upper conductive layer connected to the lower conductive layer through the contact window. The contact window is formed by removing a portion of the inter-insulating layer where the contact will be formed using a first etching gas, and removing a portion of the second conductive layer where the contact will be formed using a second etching gas. The contact resistance becomes uniform by preventing the formation of a non-volatile mixture in the contact window, and the reliability of the device is improved by planarizing the surface of the lower conductive layer.
    Type: Grant
    Filed: December 6, 1991
    Date of Patent: August 10, 1993
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jin-hong Kim, Chang-lyong Song