Abstract: A substrate processing apparatus includes: a disk including a plurality of electrostatic chucks periodically disposed at a constant radius from a central axis; a disk support supporting the disk; a DC line electrically connected to the plurality of electrostatic chucks through the disk support; and a power supply configured to supply power to the DC line. The DC line includes: a first DC line penetrating through the disk support from the power supply; a power distribution unit configured to distribute the first DC line to connect the first DC line to each of the plurality of electrostatic chucks; and a plurality of second DC lines respectively connected to the plurality of electrostatic chucks in the power distribution unit.

Abstract: A substrate processing apparatus includes: a disk including a plurality of electrostatic chucks periodically disposed at a constant radius from a central axis; a disk support supporting the disk; a DC line electrically connected to the plurality of electrostatic chucks through the disk support; and a power supply configured to supply power to the DC line. The DC line includes: a first DC line penetrating through the disk support from the power supply; a power distribution unit configured to distribute the first DC line to connect the first DC line to each of the plurality of electrostatic chucks; and a plurality of second DC lines respectively connected to the plurality of electrostatic chucks in the power distribution unit.

Abstract: A substrate processing apparatus includes: a disk including a plurality of electrostatic chucks periodically disposed at a constant radius from a central axis; a disk support supporting the disk; a DC line electrically connected to the plurality of electrostatic chucks through the disk support; and a power supply configured to supply power to the DC line. The DC line includes: a first DC line penetrating through the disk support from the power supply; a power distribution unit configured to distribute the first DC line to connect the first DC line to each of the plurality of electrostatic chucks; and a plurality of second DC lines respectively connected to the plurality of electrostatic chucks in the power distribution unit.

Abstract: A substrate processing apparatus may include a first disk provided in a chamber and configured to perform a turning motion and to include a plurality of seating holes periodically arranged within a specific radius from a center axis, a plurality of second disks provided in the seating holes, respectively, and configured to perform a revolving and rotating motion in accordance with the turning motion of the first disk, a first rotary connector structure provided between the second disk and the seating hole to allow for a rotating motion of and for an electric connection to the second disk, an electrostatic chuck provided on the second disk and configured to hold a substrate using an electric power supplied through the first rotary connector structure, and a first magnetic gear fixed to the second disk and configured to exert a torque on the second disk, and a second magnetic gear.

Abstract: A substrate processing apparatus may include a first disk provided in a chamber and configured to perform a turning motion and to include a plurality of seating holes periodically arranged within a specific radius from a center axis, a plurality of second disks provided in the seating holes, respectively, and configured to perform a revolving and rotating motion in accordance with the turning motion of the first disk, a first rotary connector structure provided between the second disk and the seating hole to allow for a rotating motion of and for an electric connection to the second disk, an electrostatic chuck provided on the second disk and configured to hold a substrate using an electric power supplied through the first rotary connector structure, and a first magnetic gear fixed to the second disk and configured to exert a torque on the second disk, and a second magnetic gear provided in the chamber to be interact with the first magnetic gear but prevented from turning.

Abstract: A semiconductor device includes a substrate having an active pattern, a conductive pattern crossing the active pattern, a spacer structure on at least one side surface of the conductive pattern, and a capping structure on the conductive pattern. The capping structure includes a first capping pattern and a second capping pattern. The second capping pattern is disposed on a top surface of the first capping pattern and a top surface of the spacer structure.

Abstract: A substrate processing apparatus includes: a disk including a plurality of electrostatic chucks periodically disposed at a constant radius from a central axis; a disk support supporting the disk; a DC line electrically connected to the plurality of electrostatic chucks through the disk support; and a power supply configured to supply power to the DC line. The DC line includes: a first DC line penetrating through the disk support from the power supply; a power distribution unit configured to distribute the first DC line to connect the first DC line to each of the plurality of electrostatic chucks; and a plurality of second DC lines respectively connected to the plurality of electrostatic chucks in the power distribution unit.

Abstract: A semiconductor device includes a substrate having an active pattern, a conductive pattern crossing the active pattern, a spacer structure on at least one side surface of the conductive pattern, and a capping structure on the conductive pattern. The capping structure includes a first capping pattern and a second capping pattern. The second capping pattern is disposed on a top surface of the first capping pattern and a top surface of the spacer structure.

Abstract: A semiconductor device includes a substrate having an active pattern, a conductive pattern crossing the active pattern, a spacer structure on at least one side surface of the conductive pattern, and a capping structure on the conductive pattern. The capping structure includes a first capping pattern and a second capping pattern. The second capping pattern is disposed on a top surface of the first capping pattern and a top surface of the spacer structure.

Abstract: The present inventive concept relates to a substrate processing apparatus and a gas distribution apparatus for substrate processing apparatuses including: a plasma generator generating plasma for performing a processing process on a substrate supported by a substrate supporting unit; a ground body coupled to the plasma generator; and a plasma shield shielding the plasma generated by the plasma generator, wherein the plasma generator includes a first electrode for generating the plasma and a second electrode coupled to the ground body at a position spaced apart from the first electrode so that a gas distribution space for distributing a process gas is provided between the first electrode and the second electrode, and the plasma shield shields the plasma, generated by the plasma generator, in at least one of a top of the substrate and a bottom of the substrate.

Abstract: Disclosed is a substrate processing method including gas injection including a source material containing silicon towards substrates received in a reaction chamber, depositing the source material on the substrates by generating plasma including oxygen radicals so as to form deposition films, and executing surface treatment of the deposition films by injecting plasma gas including oxygen radicals.

Abstract: A motor frame is disclosed. According to an exemplary embodiment in the present disclosure, a motor frame includes a main frame including a component of a motor provided therein; and a front cover and a rear cover covering an open front surface and an open rear surface of the main frame, respectively, and having cores into which the component of the motor is inserted, respectively, in which a region between the main frame and the cores is asymmetrical in a vertical direction.

Abstract: The present disclosure relates to a substrate processing apparatus, to which a source gas and a reactant gas are distributed, including a first exhaust line exhausting a first exhaust gas including the reactant gas and the source gas which is more than the reactant gas, a second exhaust line exhausting a second exhaust gas including the source gas and the reactant gas which is more than the source gas, a catch device installed in the first exhaust line, and a third exhaust line connected to an exhaust pump to exhaust the first exhaust gas passing through the catch device and the second exhaust gas passing through the second exhaust line.

Abstract: A substrate treatment device according to an embodiment of the present invention may include a process chamber, a substrate supporting part installed in the process chamber to support a plurality of substrates and rotating in a certain direction, a chamber lid covering a top of the process chamber to be opposite to the substrate supporting part, and a gas distribution unit installed in the chamber lid to spatially separate different first and second gases and distribute the spatially separated first and second gases to the plurality of substrates. The substrate supporting part may include a first disk provided to be rotatable and at least one second disk disposed on the first disk to rotate and revolve about a center of the first disk according to the first disk rotating, the plurality of substrates being disposed on the at least one second disk.

Abstract: A semiconductor device includes a fin active region protruding from a substrate and extending in a first direction, a gate electrode covering an upper surface and sidewalls of the fin active region and extending in a second direction crossing the first direction, a gate spacer structure on opposite sidewalls of the gate electrode, an insulating capping layer on the gate electrode and extending in the second direction, an insulating liner on opposite sidewalls of the gate electrode and on an upper surface of the gate spacer structure, and a self-aligned contact at a side of the gate electrode. The insulating liner may have a second thickness greater than a first thickness of the gate spacer structure. A sidewall of the self-aligned contact may be in contact with the gate spacer structure and the insulating liner.

Abstract: Provided is a semiconductor device. The semiconductor device includes a conductive pattern disposed on a semiconductor substrate. First and second conductive lines disposed on the conductive pattern and located at the same level as each other, are provided. An isolation pattern is disposed between the first and second conductive lines. A first vertical structure passing through the first conductive line and conductive pattern is provided. A second vertical structure passing through the second conductive line and conductive patterns is provided. An auxiliary pattern passing through the conductive pattern and in contact with the isolation pattern is provided.

Abstract: Disclosed is a substrate processing method including gas injection including a source material containing silicon towards substrates received in a reaction chamber, depositing the source material on the substrates by generating plasma including oxygen radicals so as to form deposition films, and executing surface treatment of the deposition films by injecting plasma gas including oxygen radicals.

Abstract: A semiconductor device includes a substrate having an active pattern, a conductive pattern crossing the active pattern, a spacer structure on at least one side surface of the conductive pattern, and a capping structure on the conductive pattern. The capping structure includes a first capping pattern and a second capping pattern. The second capping pattern is disposed on a top surface of the first capping pattern and a top surface of the spacer structure.

Abstract: A motor frame is disclosed. According to an exemplary embodiment in the present disclosure, a motor frame includes a main frame including a component of a motor provided therein; and a front cover and a rear cover covering an open front surface and an open rear surface of the main frame, respectively, and having cores into which the component of the motor is inserted, respectively, in which a region between the main frame and the cores is asymmetrical in a vertical direction.

Abstract: Provided is a semiconductor device. The semiconductor device includes a conductive pattern disposed on a semiconductor substrate. First and second conductive lines disposed on the conductive pattern and located at the same level as each other, are provided. An isolation pattern is disposed between the first and second conductive lines. A first vertical structure passing through the first conductive line and conductive pattern is provided. A second vertical structure passing through the second conductive line and conductive patterns is provided. An auxiliary pattern passing through the conductive pattern and in contact with the isolation pattern is provided.