Abstract: Provided is a semiconductor device. The semiconductor device includes a conductive pattern disposed on a semiconductor substrate. First and second conductive lines disposed on the conductive pattern and located at the same level as each other, are provided. An isolation pattern is disposed between the first and second conductive lines. A first vertical structure passing through the first conductive line and conductive pattern is provided. A second vertical structure passing through the second conductive line and conductive patterns is provided. An auxiliary pattern passing through the conductive pattern and in contact with the isolation pattern is provided.

Abstract: Provided is a semiconductor device. The semiconductor device includes a conductive pattern disposed on a semiconductor substrate. First and second conductive lines disposed on the conductive pattern and located at the same level as each other, are provided. An isolation pattern is disposed between the first and second conductive lines. A first vertical structure passing through the first conductive line and conductive pattern is provided. A second vertical structure passing through the second conductive line and conductive patterns is provided. An auxiliary pattern passing through the conductive pattern and in contact with the isolation pattern is provided.

Abstract: A hybrid solar cell and a method for manufacturing the same is disclosed, wherein the hybrid solar cell comprises a semiconductor wafer having a predetermined polarity; a first semiconductor layer on one surface of the semiconductor wafer; a second semiconductor layer on the other surface of the semiconductor wafer, wherein the second semiconductor layer is different in polarity from the first semiconductor layer; a first electrode on the first semiconductor layer; a second electrode on the second semiconductor layer; and at least one of first and second interfacial layers, wherein the first interfacial layer containing ZnO is formed between the first semiconductor layer and the first electrode, and the second interfacial layer containing ZnO is formed between the second semiconductor layer and the second electrode, wherein the hybrid solar cell is provided with the interfacial layer between the first semiconductor layer and the first electrode and/or between the second semiconductor layer and the second elec

Abstract: A hybrid solar cell is disclosed, which is capable of preventing a defect from occurring in a surface of a semiconductor wafer when forming a thin-film type semiconductor layer on the semiconductor wafer, to thereby improve cell efficiency by the increase of open-circuit voltage, the hybrid solar cell comprising a semiconductor wafer having a predetermined polarity; a first semiconductor layer on one surface of the semiconductor wafer; a second semiconductor layer on the other surface of the semiconductor wafer, wherein the second semiconductor layer is different in polarity from the first semiconductor layer; a first electrode on the first semiconductor layer; and a second electrode on the second semiconductor layer; wherein the first semiconductor layer comprises a lightly doped first semiconductor layer on one surface of the semiconductor wafer; and a highly doped first semiconductor layer on the lightly doped first semiconductor layer.

Abstract: A method of filling a gap on a substrate comprises disposing the substrate, on which the gap is formed, on a susceptor in a chamber; applying a source power to the chamber to generate plasmas into the chamber; supplying a process gas into the chamber; filling a thin film into a gap by applying a first bias power to the susceptor, an amplitude of the first bias power being periodically modulated; stopping supply of the process gas and cutting off the first bias power; and extinguish the plasmas in the chamber.

Abstract: Methods of fabricating a semiconductor device are provided, the methods include forming a first dielectric layer, a data storage layer, and a second dielectric layer, which are sequentially stacked, on a semiconductor substrate. A mask having a first opening exposing a first region of the second dielectric layer is formed on the second dielectric layer. A gate electrode filling at least a portion of the first opening is formed. A second opening exposing a second region of the second dielectric layer is formed by etching the mask such that the second region is spaced apart from the first region. A second dielectric pattern and a data storage pattern are formed by sequentially etching the exposed second region of the second dielectric layer and the data storage layer. The second dielectric pattern is formed to have a greater width than a lower surface of the gate electrode.

Abstract: An apparatus includes a transfer unit under an atmospheric condition and having a robot therein; and at least one process chamber connected to one side of the transfer unit with a slot valve there between, and being alternately under a vacuum condition and under an atmospheric condition.

Abstract: An apparatus includes a transfer unit under an atmospheric condition and having a robot therein; and at least one process chamber connected to one side of the transfer unit with a slot valve there between, and being alternately under a vacuum condition and under an atmospheric condition.

Abstract: Methods of fabricating a semiconductor device are provided, the methods include forming a first dielectric layer, a data storage layer, and a second dielectric layer, which are sequentially stacked, on a semiconductor substrate. A mask having a first opening exposing a first region of the second dielectric layer is formed on the second dielectric layer. A gate electrode filling at least a portion of the first opening is formed. A second opening exposing a second region of the second dielectric layer is formed by etching the mask such that the second region is spaced apart from the first region. A second dielectric pattern and a data storage pattern are formed by sequentially etching the exposed second region of the second dielectric layer and the data storage layer. The second dielectric pattern is formed to have a greater width than a lower surface of the gate electrode.

Abstract: An apparatus includes a transfer unit under an atmospheric condition and having a robot therein; and at least one process chamber connected to one side of the transfer unit with a slot valve there between, and being alternately under a vacuum condition and under an atmospheric condition.

Abstract: A method of filling a gap on a substrate comprises disposing the substrate, on which the gap is formed, on a susceptor in a chamber; applying a source power to the chamber to generate plasmas into the chamber; supplying a process gas into the chamber; filling a thin film into a gap by applying a first bias power to the susceptor, an amplitude of the first bias power being periodically modulated; stopping supply of the process gas and cutting off the first bias power; and extinguish the plasmas in the chamber.

Abstract: A method of filling a gap on a substrate comprises disposing the substrate, on which the gap is formed, on a susceptor in a chamber; applying a source power to the chamber to generate plasmas into the chamber; supplying a process gas into the chamber; filling a thin film into a gap by applying a first bias power to the susceptor, an amplitude of the first bias power being periodically modulated; stopping supply of the process gas and cutting off the first bias power; and extinguish the plasmas in the chamber.

Abstract: A method of filling a gap on a substrate comprises disposing the substrate, on which the gap is formed, on a susceptor in a chamber; applying a source power to the chamber to generate plasmas into the chamber; supplying a process gas into the chamber; filling a thin film into a gap by applying a first bias power to the susceptor, an amplitude of the first bias power being periodically modulated; stopping supply of the process gas and cutting off the first bias power; and extinguish the plasmas in the chamber.

Abstract: An apparatus includes a transfer unit under an atmospheric condition and having a robot therein; and at least one process chamber connected to one side of the transfer unit with a slot valve there between, and being alternately under a vacuum condition and under an atmospheric condition.

Abstract: An apparatus for a semiconductor device includes: a chamber having upper and lower portions, a volume of the lower portion being greater than a volume of the upper portion; a susceptor in the chamber, the susceptor having a substrate on a top surface thereof; an injector injecting process gases into the chamber; a coil unit over the chamber; a radio frequency power supply connected to the coil unit; and an exhaust through the chamber.