Abstract: In an oxide for a semiconductor layer of a thin film transistor according to the present invention, wherein metal elements constituting the oxide are In, Zn, and Sn, an oxygen partial pressure is 15% by volume or more when depositing the oxide in the semiconductor layer of the thin film transistor, and a defect density of the oxide satisfies 7.5×1015cm?3 or less, and a mobility satisfies 15 cm2/Vs or more.

Abstract: A method of an electronic device for making a request for a scan via short range communication and the electronic device is provided. The method includes periodically broadcasting a scan request for one or more short range communication devices; and receiving a scan result of a scan device for the one or more short range communication devices from the scan device in response to the scan request. The electronic device includes a communication module configured to broadcast a scan request for one or more short range communication devices and receive a scan result of a scan device for the one or more short range communication devices from the scan device in response to the scan request; and a processor configured to control the communication module to periodically broadcast the scan request.

Abstract: The present disclosure refers to a secondary battery which comprises a high-voltage cathode active material and a separator whose pores are not obstructed even though being used together with the high-voltage cathode active material, thereby preventing the obstruction of pores in the separator and the formation of a dendrite in the anode and eventually providing good battery life performance.

Abstract: Provided is a non-aqueous electrolyte solution including a non-aqueous organic solvent, an imide-based lithium salt, and at least one additive selected from the group consisting of lithium difluoro bis(oxalato)phosphate (LiDFOP), (trimethylsilyl)propyl phosphate (TMSPa), 1,3-propene sultone (PRS), and ethylene sulfate (ESa), as an electrolyte solution additive. According to the electrolyte solution additive for a lithium secondary battery of the present invention, the electrolyte solution additive may improve output characteristics at high and low temperatures and may prevent a swelling phenomenon by suppressing the decomposition of PF6? on the surface of a cathode, which may occur during a high-temperature cycle of a lithium secondary battery including the electrolyte solution additive, and preventing an oxidation reaction of an electrolyte solution.

Abstract: A thin film transistor array panel includes: a gate electrode disposed on a substrate, an insulating layer disposed on the gate electrode, an oxide semiconductor disposed on the gate insulating layer, source electrode overlapping a portion of the oxide semiconductor, a drain electrode overlapping another portion of the oxide semiconductor; and a buffer layer disposed between the oxide semiconductor and the source electrode and between the oxide semiconductor and the drain electrode. The buffer layer comprises tin as a doping material. A weight percent of the doping material is greater than approximately 0% and less than or equal to approximately 20%.

Abstract: Provided is a thin film transistor which is provided with an oxide semiconductor thin film layer and has a threshold voltage that does not change much due to light, a bias stress or the like, thereby exhibiting excellent stress stability. A thin film transistor of the present invention is provided with a gate electrode, an oxide semiconductor layer composed of a single layer which is used as a channel layer, an etch stopper layer to protect a surface of the oxide semiconductor layer, a source-drain electrode, and a gate insulator layer arranged between the gate electrode and the channel layer. The metal elements constituting the oxide semiconductor layer comprise In, Zn and Sn. The hydrogen concentration in the gate insulator layer in direct contact with the oxide semiconductor layer is controlled to 4 atomic % or lower.

Abstract: A thin film transistor substrate includes a substrate, a gate electrode disposed on the substrate, a gate insulation layer disposed on the gate electrode, an oxide semiconductor pattern disposed on the gate insulation layer, where the oxide semiconductor pattern includes a first area whose carrier concentration is in a range of about 1017 per cubic centimeter to about 1019 per cubic centimeter and a second area whose carrier concentration is less than the carrier concentration of the first area, an etch stopper disposed on the oxide semiconductor pattern, where the etch stopper covers the first area and the second area of the oxide semiconductor pattern, a signal electrode partially overlapping the etch stopper and the second area, and a passivation layer which covers the etch stopper and the signal electrode.

Abstract: A semiconductor device includes: a substrate, a semiconductor layer including an oxide semiconductor disposed on the substrate, a barrier layer disposed on the semiconductor layer and an insulating layer disposed on the barrier layer. The semiconductor layer includes an oxide semiconductor, and the barrier layer includes a material having a lower standard electrode potential than a semiconductor material of the oxide semiconductor, a lower electron affinity than the semiconductor material of the oxide semiconductor, or a larger band gap than the semiconductor material of the oxide semiconductor. The insulating layer includes at least one of a silicon-based oxide or a silicon-based nitride, and the insulating layer includes a portion which contacts with an upper surface of the barrier layer.

Abstract: Disclosed herein are an apparatus and method of performing inter-cell interference coordination in a heterogeneous network. The apparatus includes a reception unit, a determination unit, a generation unit, and a transmission unit. The reception unit receives a modulation and coding scheme (MCS) level from a small cell base station in each frame. The determination unit determines a calculated MCS level based on the MCS level and an interfering signal estimated through probabilistic modeling. The generation unit generates a ratio of subframes, in which data will not be transmitted, to all subframes of a frame based on the MCS level and the calculated MCS level. The transmission unit transmits the ratio and the calculated MCS level to the small cell base station.

Abstract: A vacuum interrupter includes a fixed contact and a movable contact; a driving unit including a main shaft and a plurality of links interlocked with the main shaft, to supply a driving force to open and close the vacuum interrupter; a power transmission unit to transmit a driving force of the driving unit to the movable contact; an over-current relay to detect a fault current and to output a trip signal to break a large-scaled current conduction; a trip unit to generate and transmit a mechanical operation force to the driving unit when a trip signal is output from the over-current relay; and a Thomson drive including a Thomson coil and a repulsive plate, to rotate the main shaft to an opening position or to transmit the trip signal to the trip unit, to promptly breaking a fault current.

Abstract: A thin film transistor includes a gate electrode on a substrate, a gate insulation layer which covers the gate electrode on the substrate, an oxide semiconductor pattern which is disposed on the gate insulation layer and includes a channel portion superimposed over the gate electrode, and low resistance patterns provided at edges of the channel portion, respectively, and including oxygen vacancies, a channel passivation layer on the oxide semiconductor pattern, a reaction layer which covers the oxide semiconductor pattern and the channel passivation layer, and includes a metal oxide, and a source electrode and a drain electrode which contact the oxide semiconductor pattern.

Abstract: A thin film transistor substrate includes a substrate, a data line disposed on the substrate and which extends substantially in a predetermined direction, a light blocking layer disposed on the substrate and including a metal oxide including zinc manganese oxide, zinc cadmium oxide, zinc phosphorus oxide or zinc tin oxide, a gate electrode disposed on the light blocking layer, a signal electrode including a source electrode and a drain electrode spaced apart from the source electrode, where the source electrode is connected to the data line, and a semiconductor pattern disposed between the source electrode and the drain electrode.

Abstract: A thin film transistor array panel includes: a gate electrode disposed on a substrate, an insulating layer disposed on the gate electrode, an oxide semiconductor disposed on the gate insulating layer, source electrode overlapping a portion of the oxide semiconductor, a drain electrode overlapping another portion of the oxide semiconductor; and a buffer layer disposed between the oxide semiconductor and the source electrode and between the oxide semiconductor and the drain electrode. The buffer layer comprises tin as a doping material. A weight percent of the doping material is greater than approximately 0% and less than or equal to approximately 20%.

Abstract: A thin film transistor substrate includes a substrate, a gate electrode disposed on the substrate, a gate insulation layer disposed on the gate electrode, an oxide semiconductor pattern disposed on the gate insulation layer, where the oxide semiconductor pattern includes a first area whose carrier concentration is in a range of about 1017 per cubic centimeter to about 1019 per cubic centimeter and a second area whose carrier concentration is less than the carrier concentration of the first area, an etch stopper disposed on the oxide semiconductor pattern, where the etch stopper covers the first area and the second area of the oxide semiconductor pattern, a signal electrode partially overlapping the etch stopper and the second area, and a passivation layer which covers the etch stopper and the signal electrode.

Abstract: Provided are a lithium secondary battery including a cathode, an anode, a separator, and a gel polymer electrolyte, wherein i) the anode includes a silicon (Si)-based anode active material, ii) the gel polymer electrolyte is formed by polymerizing a composition that includes a monomer having a functional group bondable to metal ions, and iii) a charge voltage of the battery is in a range of 3.0 V to 5.0 V. Since the lithium secondary battery of the present invention may prevent the movement of metal ions dissolved from a cathode to an anode or reduce the precipitation of metal on the anode, the lifetime of the battery may not only be improved but capacity characteristics of the battery may also be excellent even in the case in which the battery is charged at a high voltage as well as normal voltage.

Abstract: Provided are a lithium secondary battery including a cathode, an anode, a separator, and a gel polymer electrolyte, wherein the gel polymer electrolyte includes an acrylate-based polymer and a charge voltage of the battery is in a range of 4.3 V to 5.0 V, and a method of preparing the lithium secondary battery. A high-voltage lithium secondary battery of the present invention has excellent capacity characteristics at a high voltage of 4.3 V or more.

Abstract: Provided are a composition for a gel polymer electrolyte including i) an electrolyte solution solvent, ii) an ionizable lithium salt, iii) a polymerization initiator, and iv) a monomer having a functional group bondable to metal ions, and a lithium secondary battery including the composition for a gel polymer electrolyte.

Abstract: Disclosed herein are an apparatus and method of performing inter-cell interference coordination in a heterogeneous network. The apparatus includes a reception unit, a determination unit, a generation unit, and a transmission unit. The reception unit receives a modulation and coding scheme (MCS) level from a small cell base station in each frame. The determination unit determines a calculated MCS level based on the MCS level and an interfering signal estimated through probabilistic modeling. The generation unit generates a ratio of subframes, in which data will not be transmitted, to all subframes of a frame based on the MCS level and the calculated MCS level. The transmission unit transmits the ratio and the calculated MCS level to the small cell base station.

Abstract: A washing machine for reducing vibration and noise during a spin-drying cycle, and a control method thereof. According to the washing machine and the control method thereof, cloth piled up randomly in the washing tub is shaken and loosened through the stirring from side to side of the pulsator or the washing tub before water is supplied after putting the cloth therein, so that distribution of the cloth is made uniform to reduce vibration and noise during the spin-drying cycle. Further, unsatisfactory spin-drying due to abnormal vibration is prevented so that it is possible to reduce unnecessary consumption of water and spin-drying time. Further, even when the user does not put detergent in the detergent box but puts it directly onto the cloth, the detergent is shaken by the movement of the cloth, so it is possible to improve washing performance as the detergent and water are mixed well.

Abstract: A semiconductor device includes: a substrate, a semiconductor layer including an oxide semiconductor disposed on the substrate, a barrier layer disposed on the semiconductor layer and an insulating layer disposed on the barrier layer. The semiconductor layer includes an oxide semiconductor, and the barrier layer includes a material having a lower standard electrode potential than a semiconductor material of the oxide semiconductor, a lower electron affinity than the semiconductor material of the oxide semiconductor, or a larger band gap than the semiconductor material of the oxide semiconductor. The insulating layer includes at least one of a silicon-based oxide or a silicon-based nitride, and the insulating layer includes a portion which contacts with an upper surface of the barrier layer.