Abstract: Provided are 1) a method for forming a ruthenium film under a single process condition, whereby high adhesion of the ruthenium film to a lower layer is maintained, and 2) a method for manufacturing an metal-insulator-metal (MIM) capacitor using the ruthenium film forming method. The method for forming a ruthenium film includes supplying bis(isoheptane-2,4-dionato)norbornadiene ruthenium at a flow rate of 0.2–1 ccm and oxygen at a flow rate of 20–60 sccm, and depositing the ruthenium film at a temperature of 330–430° C. under a pressure of 0.5–5 Torr using chemical vapor deposition (CVD).

Abstract: Capacitors include an integrated circuit (semiconductor) substrate and an interlayer dielectric disposed on the integrated circuit substrate and including a metal plug therein. A lower electrode is disposed on the interlayer dielectric and contacting the metal plug. The lower electrode includes a cavity therein and a buried layer in the cavity. The buried layer is an oxygen absorbing material. A dielectric layer disposed on the lower electrode and an upper electrode is disposed on the dielectric layer. The lower electrode may be a noble metal layer. The buried layer may fill in the cavity and may not contain oxygen (O2) when initially formed.

Abstract: Methods of forming MIM comprise forming a lower electrode on a semiconductor substrate, forming a lower dielectric layer on the lower electrode, and forming an upper dielectric layer on the lower dielectric layer. The lower dielectric layer may be formed of dielectrics having larger energy band gap than that of the upper dielectric layer. An upper electrode is formed on the upper dielectric layer. The upper electrode may be formed of a metal layer having a higher work function than that of the lower electrode.

Abstract: Capacitors include an integrated circuit (semiconductor) substrate and an interlayer dielectric disposed on the integrated circuit substrate and including a metal plug therein. A lower electrode is disposed on the interlayer dielectric and contacting the metal plug. The lower electrode includes a cavity therein and a buried layer in the cavity. The buried layer is an oxygen absorbing material. A dielectric layer disposed on the lower electrode and an upper electrode is disposed on the dielectric layer. The lower electrode may be a noble metal layer. The buried layer may fill in the cavity and may not contain oxygen (O2) when initially formed.

Abstract: Methods of fabricating a semiconductor device are provided in which a storage node contact plug is formed on a semiconductor substrate. A ruthenium seed layer is then formed via atomic layer deposition on the storage node contact plug, and a main ruthenium layer is formed on the ruthenium seed layer. The main ruthenium layer and the ruthenium seed layer are patterned to form a lower electrode, and a dielectric layer is formed on the lower electrode. Finally, an upper electrode is formed on the dielectric layer. The upper electrode may be formed by forming a second ruthenium seed layer using atomic layer deposition on the dielectric layer and forming a second main ruthenium layer on the second ruthenium seed layer. The main ruthenium layer and/or the second main ruthenium layer may be formed via chemical vapor deposition.

Abstract: An integrated circuit device is formed by providing a substrate and forming a capacitor on the substrate. The capacitor includes a lower electrode disposed on the substrate, a dielectric layer on the lower electrode, and an upper electrode on the dielectric. A hydrogen barrier insulation layer is formed on the upper electrode and a hydrogen barrier spacer is formed on a sidewall of the capacitor.

Abstract: Provided are 1) a method for forming a ruthenium film under a single process condition, whereby high adhesion of the ruthenium film to a lower layer is maintained, and 2) a method for manufacturing an metal-insulator-metal (MIM) capacitor using the ruthenium film forming method. The method for forming a ruthenium film includes supplying bis(isoheptane-2,4-dionato)norbornadiene ruthenium at a flow rate of 0.2-1 ccm and oxygen at a flow rate of 20-60 sccm, and depositing the ruthenium film at a temperature of 330-430° C. under a pressure of 0.5-5 Torr using chemical vapor deposition (CVD).

Abstract: The present invention relates to a wireless hands-free system of cellular phone, more particularly to a wireless hands-free system of cellular phone, capable of being connected to any cellular phone easily, being used qualitatively without directly handling the body of a cellular phone, and lengthening the life span of its battery by reducing power consumption greatly due to a design of low power operated according to a transmitting-receiving condition.