Abstract: The present disclosure relates to a temperature sensor circuit for measuring temperature change inside a pixel of a high-brightness active matrix micro-light-emitting diode (micro-LED) display, and a display apparatus including the temperature sensor circuit. The temperature sensor circuit according to one embodiment of the present disclosure includes a first thin film transistor, a second thin film transistor interconnected with the first thin film transistor, and a temperature measurement unit for measuring temperature based on an output voltage according to difference in off current between the first thin film transistor and the second thin film transistor.

Abstract: A display device includes non-folding areas, at least one folding area between the non-folding areas and configured to be transformed into a bent shape and a planar shape, and a display panel emitting light for displaying an image. A circuit layer of the display panel includes light-emitting pixel drivers, gate lines, and a gate-driving circuit including stages electrically connected to the gate lines. Each of the stages includes a first buffer transistor and a second buffer transistor. A channel portion of each of the first buffer transistor and the second buffer transistor in the at least one folding area has a comb shape formed by one or more slits that extend in a direction in which the first electrode portion and the second electrode portion face each other and are arranged in parallel with each other.

Abstract: Disclosed is a method of fabricating an oxide semiconductor thin-film transistor, the method including a step of forming an oxide semiconductor layer including a channel region, a source region, and a drain region on a substrate; a step of forming a gate insulating layer on the channel region; a step of forming a gate electrode on the gate insulating layer; and a step of forming a source electrode and a drain electrode on the source and drain regions, respectively, wherein the step of forming an oxide semiconductor layer includes a step of selectively plasma-treating the source and drain regions of the oxide semiconductor layer with a fluorine (F)-based gas, and the source and drain regions contain fluorine (F) at a concentration of 2×1014/cm3 to 17.5×1021/cm3.

Abstract: A pixel may include a micro LED, a pulse width modulation (PWM) adjustment circuit that includes an inverter, and controls a light emission period of the micro LED on the basis of an output of the inverter according to a data voltage which is provided to an input terminal of the inverter and a duty driving signal, and a constant current (CC) generating circuit that provides a constant current to the micro LED for the light emission period. The inverter may be implemented with low-temperature polycrystalline silicon and oxide thin-film transistors (LTPO TFTs).

Abstract: Discussed is a display device including a substrate, a thin film transistor formed on the substrate, the thin film transistor including a source electrode, a drain electrode, and a gate electrode, and a plurality of semiconductor light emitting devices emitting light so as to each form individual pixels and each having a p-type electrode and an n-type electrode, wherein at least one of the plurality of of the semiconductor light emitting devices is disposed so that one of the p-type electrode and the n-type electrode overlaps the source electrode of the thin film transistor.

Abstract: The present invention relates to a display pixel circuit using ferroelectric thin-film transistors and a method of driving the same. More particularly, the present invention relates to a display pixel circuit in which a volatile switch function and a non-volatile memory function are selectively applied by using a plurality of ferroelectric thin-film transistors including a ferroelectric gate-insulating film having a high dielectric constant (high-k) and a method of driving the display pixel circuit.

Abstract: A pixel circuit may include a first transistor that provides a data signal to a first node according to a scan signal, a second transistor that initializes the first node, a first capacitor that is coupled between one terminal to which a light emission signal is provided and the first node, a second capacitor that is coupled between the first node and a second node, a third transistor that includes a gate coupled to the second node and one terminal coupled to a third node, a fourth transistor that includes a gate coupled to the second node and one terminal coupled to the third node, a fifth transistor that is coupled between the second node and the third node, a drive transistor that includes a gate to which a voltage corresponding to the voltage at the third node is supplied, and a micro light emitting diode that is coupled to the drive transistor.

Abstract: A DC-DC converter may include a first transistor that includes one terminal to which an input voltage is provided, a second transistor that includes one terminal connected to another terminal of the first transistor, a third transistor that includes one terminal to which the input voltage is provided, a fourth transistor that includes one terminal connected to another terminal of the third transistor, a fifth transistor that has a diode connection with another terminal of the second transistor, a sixth transistor that has a diode connection with another terminal of the fourth transistor, a first capacitor that includes one terminal connected to the gate of the fifth transistor, and another terminal to which a first clock signal is provided, and a second capacitor that includes one terminal connected to the gate of the sixth transistor, and another terminal to which a second clock signal is provided.

Abstract: Disclosed are a ferroelectric semiconductor thin film, a method of forming the ferroelectric semiconductor thin film, a transistor, a memory device and an integrated circuit. The method of forming the ferroelectric semiconductor thin film includes preparing a precursor solution including an indium precursor and a selenium precursor, and performing spray pyrolysis of the precursor solution on a substrate to obtain the ferroelectric semiconductor thin film including a polycrystalline ?-In2Se3 layer.

Abstract: The present disclosure relates to a stretchable display and a method of manufacturing the same. The stretchable display according to one embodiment includes a stretchable substrate; a plurality of pixel islands formed on the stretchable substrate, wherein each of the pixel islands includes at least one thin-film transistor and one micro-LED; a plurality of pixel wires formed based on a liquid metal and connecting adjacent pixel islands among the pixel islands to each other; and a plurality of bus wires formed based on the liquid metal and connected to at least one pixel island among the pixel islands.

Abstract: A thin-film transistor (TFT), includes: a substrate (202); an organic semiconductor (OSC) layer (210) positioned on the substrate; a dielectric layer (214) positioned on the OSC layer; and a polymeric interlayer (212) disposed in-between the OSC layer and the dielectric layer, such that the dielectric layer is configured to exhibit a double layer capacitance effect. A method of forming a thin-film transistor, includes: providing a substrate; providing a bottom gate layer atop the substrate; disposing consecutively from the substrate, an organic semiconductor (OSC) layer, a dielectric layer, and a top gate layer; and patterning the OSC layer, the dielectric layer, and the top gate layer using a single mask.

Abstract: Disclosed is a spray coater including a spray nozzle part including at least one ultrasonic nozzle and configured to spray a coating material, a spray nozzle mounting part including a mounting block to which the spray nozzle part is fixed, a substrate holder positioned below the spray nozzle part and configured to hold a substrate to be coated, and a controller configured to operate the spray nozzle mounting part or the substrate holder in a first scanning direction extending along one spray line, the controller being configured to control a relative position of the spray nozzle part with respect to the substrate, in which a solution material containing an oxide semiconductor precursor is injected into the spray nozzle part.

Abstract: Disclosed are a method of manufacturing a thin film transistor, a thin film transistor, and an electronic device. The method of manufacturing a thin film transistor includes forming an oxide semiconductor layer, forming a gate electrode overlapped with at least a portion of the oxide semiconductor layer, and forming a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, wherein the forming of the oxide semiconductor layer includes preparing a precursor solution for an oxide semiconductor, and performing spray pyrolysis of the precursor solution for the oxide semiconductor to obtain a c-axis aligned crystalline oxide semiconductor.

Abstract: A pixel circuit may include a first transistor that provides a data signal to a first node according to a scan signal, a second transistor that initializes the first node, a first capacitor that is coupled between one terminal to which a light emission signal is provided and the first node, a second capacitor that is coupled between the first node and a second node, a third transistor that includes a gate coupled to the second node and one terminal coupled to a third node, a fourth transistor that includes a gate coupled to the second node and one terminal coupled to the third node, a fifth transistor that is coupled between the second node and the third node, a drive transistor that includes a gate to which a voltage corresponding to the voltage at the third node is supplied, and a micro light emitting diode that is coupled to the drive transistor.

Abstract: A thin film transistor according to an embodiment may include a gate electrode that is positioned on a substrate; a semiconductor layer that includes a channel region overlapping the gate electrode and a gate insulating film interposed therebetween and a source region and a drain region positioned on both sides of the channel region; and a source electrode and a drain electrode that contact the source region and the drain region of the semiconductor layer, in which the semiconductor layer may include a polycrystalline oxide semiconductor, the polycrystalline oxide semiconductor includes indium, gallium, and an additional oxide in which an additional element and oxygen are bonded, and bond energy of the additional oxide may be greater than about 500 (KJ/mol).

Abstract: A thin film transistor according to an embodiment may include a gate electrode disposed on a substrate; a semiconductor layer overlapping the gate electrode via a gate insulating layer interposed therebetween; and a source electrode and a drain electrode in contact with the semiconductor layer, the semiconductor layer may include an amorphous oxide semiconductor, and the semiconductor layer may include nanocrystalline dots.

Abstract: Disclosed are a ferroelectric zirconium aluminum oxide (ZAO) compound, a method of preparing the same, a ferroelectric thin film transistor including the same and a method of manufacturing the ferroelectric thin film transistor. The ferroelectric zirconium aluminum oxide (ZAO) compound of the present disclosure is characterized by including zirconium and aluminum.

Abstract: A manufacturing method for a thin film transistor according to an exemplary embodiment includes a step of forming a buffer layer on a substrate, a step of forming a hydrogenated amorphous silicon layer on the buffer layer, a step of performing blue laser annealing on the hydrogenated amorphous silicon layer, and a step of forming a semiconductor layer by doping parts of the hydrogenated amorphous silicon layer with impurities, and in the step of performing blue laser annealing, dehydrogenation and crystallization are performed in the hydrogenated amorphous silicon layer.

Abstract: A photodiode according to an embodiment includes: a semiconductor layer including a first area, a second area, and a third area; a first electrode electrically connected to the first area; and a second electrode electrically connected to the third area, wherein the first area includes a p-type semiconductor area, the third area includes an n-type semiconductor area, and the thickness of the semiconductor layer is 50 nanometers to 800 nanometers.

Abstract: Disclosed is a thin film transistor including: a gate electrode disposed on a substrate; a semiconductor layer overlapping the gate electrode with a gate insulating film interposed therebetween, and a source region and a drain region which are in contact with the semiconductor layer, in which the semiconductor layer includes a crystallized oxide semiconductor, and the crystallized oxide semiconductor includes a crystal having an X-ray diffraction (XRD) main peak Miller index (hkl) value of (009).