Abstract: In a photoresist dispensing apparatus for use in manufacturing a semiconductor device, to coercively emit photoresist from a bottle by using a dispensing pump and to pass it through a supply line and a filter to obtain a filtering operation, and to spray the filtered photoresist to a wafer through a spraying nozzle; a bubble removal unit is equipped with the supply line, before the dispensing pump. Large and micro bubbles generated in the midst of flow of photoresist, and foreign substances, are substantially filtered off so as to supply photoresist of a good quality. A floating load in a foreign substance removal filter is substantially removed, thus spraying photoresist under an always uniform and stabilized pressure by using a dispensing pump, to cover a wafer with photoresist in a uniform thickness and obtain a precise pattern formation.

Abstract: A vertical double channel silicon-on-insulator (SOI) field-effect-transistor (FET) includes a pair of two vertical semiconductor layers in contact with a pair of parallel shallow trench isolation layers on a substrate, a source, a drain and a channel region on each of the pair of vertical semiconductor layers with corresponding regions on the pair of vertical semiconductor layers facing each other in alignment, a gate oxide on the channel region of both of the pair of the vertical semiconductor layers, and a gate electrode, a source electrode, and a drain electrode electrically connecting the respective regions of the pair of vertical semiconductor layers.

Abstract: A semiconductor etching apparatus includes an electrostatic chuck, an edge ring and a spacer. The electrostatic chuck includes a ring mounting part. The edge ring has an outer part and an inner part. The outer part has a thickness greater than a height of the ring mounting part, and the inner part is disposed to be proximate to the vertical surface of the ring mounting part. Upper and lower surfaces of the inner part are stepped upward and downward, respectively, by the same height from upper and lower surfaces of the outer part. The spacer is ring-shaped, is disposed on a horizontal surface of the ring mounting part, supports the inner part of the edge ring member, and has a thickness that is the same as the height between the lower surface of the outer part and the upper surface of the inner part of the edge ring member.

Abstract: Integrated circuit field effect transistors are manufactured by forming a pre-active pattern on a surface of a substrate, while refraining from doping the pre-active pattern with phosphorus. The pre-active pattern includes a series of interchannel layers and channel layers stacked alternately upon each other. Source/drain regions are formed on the substrate, at opposite ends of the pre-active pattern. The interchannel layers are then selectively removed, to form tunnels passing through the pre-active pattern, thereby defining an active channel pattern including the tunnels and channels including the channel layers. The channels are doped with phosphorus after selectively removing the interchannel layers. A gate electrode is then formed in the tunnels and surrounding the channels.

Abstract: A vertical double channel silicon-on-insulator (SOI) field-effect-transistor (FET) includes a pair of two vertical semiconductor layers in contact with a pair of parallel shallow trench isolation layers on a substrate, a source, a drain and a channel region on each of the pair of vertical semiconductor layers with corresponding regions on the pair of vertical semiconductor layers facing each other in alignment, a gate oxide on the channel region of both of the pair of the vertical semiconductor layers, and a gate electrode, a source electrode, and a drain electrode electrically connecting the respective regions of the pair of vertical semiconductor layers.

Abstract: A memory cell of a semiconductor device and a method for forming the same, wherein the memory cell includes a substrate having active regions and field regions, a gate layer formed over the substrate, the gate layer including a plurality of access gates formed over the active regions of the substrate and a plurality of pass gates formed over the field regions of the substrate, first self-aligned contact regions formed between adjacent pass gates and access gates, and second self-aligned contact regions formed between adjacent access gates, wherein a width of each of the first self-aligned contact regions is larger than a width of each of the second self-aligned contact regions.

Abstract: A vertical double channel silicon-on-insulator (SOI) field-effect-transistor (FET) includes a pair of two vertical semiconductor layers in contact with a pair of parallel shallow trench isolation layers on a substrate, a source, a drain and a channel region on each of the pair of vertical semiconductor layers with corresponding regions on the pair of vertical semiconductor layers facing each other in alignment, a gate oxide on the channel region of both of the pair of the vertical semiconductor layers, and a gate electrode, a source electrode, and a drain electrode electrically connecting the respective regions of the pair of vertical semiconductor layers.

Abstract: A desired level of pressure is established in at least one chamber that forms part of a closed atmosphere, such as in a semiconductor device processing facility. A pressure control system includes at least one space increase/decrease device that has a partition which is movable to increase and/or decrease the volume of free space within the chamber(s), a pressure sensor for detecting the pressure within the chamber(s), and a controller for controlling the movement of the partition based on the detected pressure. A chamber is provided with positive or negative pressure to increase or decrease the pressure therein while the pressure in the chamber is monitored. As soon as the pressure within the chamber equals a predetermined pressure, the providing of the positive or negative pressure is stopped. The partition is moved to vary the effective volume of free space in the chamber(s) to change the pressure in the chamber from the predetermined pressure to the desired pressure.

Abstract: An apparatus for supplying a process gas onto a wafer includes a plurality of nozzles integrated with an electrode plate of an upper electrode. The nozzles are configured so that the flow rate of the process gas towards the wafer is greater at locations across from the outer peripheral portion of the wafer than from a location across from the center of the wafer. The plurality of nozzles thus can distribute the gas so that the density of the gas is uniform across the entire upper entire upper surface of the wafer.

Abstract: A memory cell of a semiconductor device and a method for forming the same, wherein the memory cell includes a substrate having active regions and field regions, a gate layer formed over the substrate, the gate layer including a plurality of access gates formed over the active regions of the substrate and a plurality of pass gates formed over the field regions of the substrate, first self-aligned contact regions formed between adjacent pass gates and access gates, and second self-aligned contact regions formed between adjacent access gates, wherein a width of each of the first self-aligned contact regions is larger than a width of each of the second self-aligned contact regions.

Abstract: Methods and apparatus for varying the number and intensity of beams of a photo-lithographic light source for exposing photoresist materials include beam dividers and beam focusing means. Methods include producing an incident light beam having uniform intensity distribution, refracting the incident light beam into a plurality of divergent beams, refracting the plurality of divergent beams into a plurality of parallel beams, and exposing an object with light of the plurality of parallel beams. Apparatus includes source of light beam having uniform intensity distribution, first refracting element for refracting the light beam into a plurality of divergent beams, second refracting element for refracting the plurality of divergent beams into a plurality of parallel beams, and means for exposing the object with light of the plurality of parallel beams. Variations in the separations of the refractive elements allows for the control of the size, shape, and dispersion patterns of resultant beams.

Abstract: A desired level of pressure is established in at least one chamber that forms part of a closed atmosphere, such as in a semiconductor device processing facility. A pressure control system includes at least one space increase/decrease device that has a partition which is movable to increase and/or decrease the volume of free space within the chamber(s), a pressure sensor for detecting the pressure within the chamber(s), and a controller for controlling the movement of the partition based on the detected pressure. A chamber is provided with positive or negative pressure to increase or decrease the pressure therein while the pressure in the chamber is monitored. As soon as the pressure within the chamber equals a predetermined pressure, the providing of the positive or negative pressure is stopped. The partition is moved to vary the effective volume of free space in the chamber(s) to change the pressure in the chamber from the predetermined pressure to the desired pressure.

Abstract: Methods and apparatus for varying the number and intensity of beams of a photo-lithographic light source for exposing photoresist material include beam dividers and beam focusing means. Methods include producing an incident light beam having uniform intensity distribution, refracting the incident light beam into a plurality of divergent beams, refracting the plurality of divergent beams into a plurality of parallel beams, and exposing an object with light of the plurality of parallel beams. Apparatus includes source of light beam having uniform intensity distribution, first refracting element for refracting the light beam into a plurality of divergent beams, second refracting element for refracting the plurality of divergent beams into a plurality of parallel beams, and means for exposing the object with light of the plurality of parallel beams. Variations in the separations of the refractive elements allows for the control of the size, shape, and dispersion patterns of resultant beams.