Abstract: Provided are a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes a charge storage pattern formed on a substrate; a dielectric pattern formed on the charge storage pattern; a first conductive pattern including silicon doped with a first impurity of a first concentration, the first conductive pattern being disposed on the dielectric pattern; and a second conductive pattern including metal silicide doped with a second impurity of a second concentration, the second conductive pattern being disposed on the first conductive pattern. The first concentration may be higher than the second concentration.

Abstract: Provided are acetylated cellulose ether and an article including the same. The acetylated cellulose ether has a molecular weight of about 1,000 to about 1,000,000 Daltons, a contact angle of about 20 to about 45 degrees (°), and a tensile strength of about 50 to about 100 MPa.

Abstract: A method for determining a transmission power in a multi-input multi-output (MIMO) system based on a cooperative transmission is provided. The method includes setting a power constraint condition of a transmitter and target quality information of a receiver. The method further includes determining the transmission power to be allocated to the transmitter to transmit the data to the receiver based on the power constraint condition and the target quality information.

Abstract: Provided are a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes a charge storage pattern formed on a substrate; a dielectric pattern formed on the charge storage pattern; a first conductive pattern including silicon doped with a first impurity of a first concentration, the first conductive pattern being disposed on the dielectric pattern; and a second conductive pattern including metal silicide doped with a second impurity of a second concentration, the second conductive pattern being disposed on the first conductive pattern. The first concentration may be higher than the second concentration.

Abstract: Acetylated cellulose ether and an article including the same. The acetylated cellulose ether has a degree of substitution (DS) of alkyl group of 1 to 2, a molar substitution (MS) of hydroxyalkyl group of 0 to 1, and a degree of substitution (DS) of acetyl group of 1 to 2.

Abstract: Provided are an organic light emitting display device and a method of manufacturing the same. The organic light emitting display device includes a substrate; at least one thin film transistor including a gate electrode including a metal oxide layer and a metal layer, a semiconductor layer including source/drain regions and a channel layer; at least one capacitor including a first electrode formed on a layer on which the gate electrode is formed by using a material forming the gate electrode, and a second electrode formed on a layer on which the source/drain electrodes are formed by using a material used to form the source/drain electrodes; and at least one organic light emitting device including a pixel electrode formed on a layer on which the gate electrode is formed by using a material used to form the gate electrode and connected to the source/drain electrodes via a contact hole.

Abstract: A semiconductor device may include an upper interconnection on a substrate and an anti-reflection pattern disposed on the upper interconnection. The anti-reflection pattern may include a compound including a metal, carbon and nitrogen.

Abstract: A method of manufacturing a semiconductor device including forming a plurality of gate structures spaced apart from each other on a substrate; forming a first insulation layer covering the gate structures, the first insulation layer including a void between the gate structures; removing an upper portion of the first insulation layer to form a first insulation layer pattern on sidewalls of lower portions of the gate structures and on the substrate between the gate structures, the first insulation layer pattern including a first recess thereon; forming a conductive layer on upper portions of the gate structures exposed by the first insulation layer pattern; reacting the conductive layer with the gate structures; and forming a second insulation layer on the upper portions of the gate structures, the second insulation layer including a second recess therebeneath in fluid communication with the first recess.

Abstract: A semi-automatically sliding mobile terminal includes a first main body, a second main body, a hinge unit, and a guide line. The second main body slides on the upper side of the first main body. The hinge unit includes a coupler coupled to the first main body and a spring unit compressing and expanding in a lateral direction. The guide unit includes a curved line having an ascending curved line, a crest, and a descending curved line that are formed in a longitudinal direction. When the second main body moves, the spring unit compresses or expands along the guide line. The spring unit compresses before passing over the crest and expands after passing over the crest. After the crest, the second main body moves semi-automatically due to elastic force of the spring unit.

Abstract: Provided are a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes a charge storage pattern formed on a substrate; a dielectric pattern formed on the charge storage pattern; a first conductive pattern including silicon doped with a first impurity of a first concentration, the first conductive pattern being disposed on the dielectric pattern; and a second conductive pattern including metal silicide doped with a second impurity of a second concentration, the second conductive pattern being disposed on the first conductive pattern. The first concentration may be higher than the second concentration.

Abstract: Provided are an organic light emitting display device and a method of manufacturing the same. The organic light emitting display device includes a substrate; at least one thin film transistor including a gate electrode including a metal oxide layer and a metal layer, a semiconductor layer including source/drain regions and a channel layer; at least one capacitor including a first electrode formed on a layer on which the gate electrode is formed by using a material forming the gate electrode, and a second electrode formed on a layer on which the source/drain electrodes are formed by using a material used to form the source/drain electrodes; and at least one organic light emitting device including a pixel electrode formed on a layer on which the gate electrode is formed by using a material used to form the gate electrode and connected to the source/drain electrodes via a contact hole.

Abstract: A black matrix having an opening at pixels of a matrix array in a display area, a common wire including common pads and common signal lines, and gate pads in a peripheral area, and an alignment key in outer area to align interlayer thin films are formed on an insulating substrate. Red, blue and green color filters the edge of which overlap the black matrix are formed at the pixels on the insulating substrate, and an organic insulating layer covering the black matrix and the color filters and having a contact hole exposing the gate pad is formed thereon. A gate wire including a gate line connected to the gate pad through the contact hole and a gate electrode connected to the gate line is formed on the organic insulating layer, and a gate insulating layer covering the gate wire is formed on the organic insulating layer. A semiconductor pattern and ohmic contact layers are sequentially formed on the gate insulating layer of the gate electrode.

Abstract: A semi-automatically sliding mobile terminal is disclosed. The mobile terminal includes a first main body, a second main body, a hinge unit, and a guide line. The second main body slides on the upper side of the first main body. The hinge unit includes a coupler coupled to the first main body and a spring unit compressing and expanding in a lateral direction. The guide unit includes a curved line having an ascending curved line, a crest, and a descending curved line that are formed in a longitudinal direction. When the second main body moves, the spring unit compresses or expands along the guide line. The spring unit compresses before passing over the crest and expands after passing over the crest. After the crest, the second main body moves semi-automatically due to elastic force of the spring unit.

Abstract: A method of fabricating a liquid crystal display device includes forming a thin film transistor array on an active area of a first substrate, forming a color filter layer and a black matrix layer on a second substrate, forming a sealant along a peripheral portion of the second substrate, bonding the first and second substrates, and hardening the sealant by exposure to light, wherein the black matrix layer and the sealant are offset and do not overlap each other.

Abstract: A black matrix having an opening at pixels of a matrix array in a display area, a common wire including common pads and common signal lines, and gate pads in a peripheral area, and an alignment key in outer area to align interlayer thin films are formed on an insulating substrate. Red, blue and green color filters the edge of which overlap the black matrix are formed at the pixels on the insulating substrate, and an organic insulating layer covering the black matrix and the color filters and having a contact hole exposing the gate pad is formed thereon. A gate wire including a gate line connected to the gate pad through the contact hole and a gate electrode connected to the gate line is formed on the organic insulating layer, and a gate insulating layer covering the gate wire is formed on the organic insulating layer. A semiconductor pattern and ohmic contact layers are sequentially formed on the gate insulating layer of the gate electrode.

Abstract: A black matrix having an opening at pixels of a matrix array in a display area, a common wire including common pads and common signal lines, and gate pads in a peripheral area, and an alignment key in outer area to align interlayer thin films are formed on an insulating substrate. Red, blue and green color filters the edge of which overlap the black matrix are formed at the pixels on the insulating substrate, and an organic insulating layer covering the black matrix and the color filters and having a contact hole exposing the gate pad is formed thereon. A gate wire including a gate line connected to the gate pad through the contact hole and a gate electrode connected to the gate line is formed on the organic insulating layer, and a gate insulating layer covering the gate wire is formed on the organic insulating layer. A semiconductor pattern and ohmic contact layers are sequentially formed on the gate insulating layer of the gate electrode.

Abstract: A black matrix having an opening at pixels of a matrix array in a display area, a common wire including common pads and common signal lines, and gate pads in a peripheral area, and an alignment key in outer area to align interlayer thin films are formed on an insulating substrate. Red, blue and green color filters the edge of which overlap the black matrix are formed at the pixels on the insulating substrate, and an organic insulating layer covering the black matrix and the color filters and having a contact hole exposing the gate pad is formed thereon. A gate wire including a gate line connected to the gate pad through the contact hole and a gate electrode connected to the gate line is formed on the organic insulating layer, and a gate insulating layer covering the gate wire is formed on the organic insulating layer. A semiconductor pattern and ohmic contact layers are sequentially formed on the gate insulating layer of the gate electrode.

Abstract: A thin film transistor (TFT) array display panel is provided, which includes: a substrate; a plurality of semiconductor islands formed on the substrate (including a plurality of transistor source, channel, and drain regions); a gate insulating layer covering the semiconductor islands; a plurality of gate lines (including gate electrodes overlapping the channel regions) formed on the gate insulating layer; a plurality of data lines connected to the source regions and formed on the gate insulating layer; and a plurality of pixel electrodes connected to the drain regions. the number or at grain boundaries of the portion of the semiconductor that is selected as the gate region is varied (different, unequal) among the semiconductors in the same column of the array which prevents visible stripes due to current leakage caused by protrusions. The position of each semiconductor island (e.g., relative to one of the data lines) is varied (e.g., randomly) among semiconductors in the same column of the array.

Abstract: A black matrix having an opening at pixels of a matrix array in a display area, a common wire including common pads and common signal lines, and gate pads in a peripheral area, and an alignment key in outer area to align interlayer thin films are formed on an insulating substrate. Red, blue and green color filters the edge of which overlap the black matrix are formed at the pixels on the insulating substrate, and an organic insulating layer covering the black matrix and the color filters and having a contact hole exposing the gate pad is formed thereon. A gate wire including a gate line connected to the gate pad through the contact hole and a gate electrode connected to the gate line is formed on the organic insulating layer, and a gate insulating layer covering the gate wire is formed on the organic insulating layer. A semiconductor pattern and ohmic contact layers are sequentially formed on the gate insulating layer of the gate electrode.

Abstract: A black matrix having an opening at pixels of a matrix array in a display area, a common wire including common pads and common signal lines, and gate pads in a peripheral area, and an alignment key in outer area to align interlayer thin films are formed on an insulating substrate. Red, blue and green color filters the edge of which overlap the black matrix are formed at the pixels on the insulating substrate, and an organic insulating layer covering the black matrix and the color filters and having a contact hole exposing the gate pad is formed thereon. A gate wire including a gate line connected to the gate pad through the contact hole and a gate electrode connected to the gate line is formed on the organic insulating layer, and a gate insulating layer covering the gate wire is formed on the organic insulating layer. A semiconductor pattern and ohmic contact layers are sequentially formed on the gate insulating layer of the gate electrode.