Abstract: A method for uplink synchronization in a distributed antenna system is provided. A user equipment determines a transmission offset based on a transmission point for uplink synchronization, allocates uplink synchronization signal to a second communication channel based on the transmission offset, and transmits the uplink transmission signal to the transmission point for uplink synchronization through the second communication channel.

Abstract: A location information providing apparatus to provide a location thereof, the location information providing apparatus including: a storage unit to store location information regarding the location of the location information providing apparatus; and a transmitter to transmit the location information. Therefore, precise location information can be provided. In addition, a location-based service can be performed in a simple way because there is no need to consider a handoff depending on a movement of a location-based service supporting apparatus, and a service area can be expanded abroad because a wired network is not required. Also, various opportunities using the location-based service can be realized.

Abstract: A plasma etching chamber of a plasma etching apparatus used in an etching process for manufacturing a photomask and a method for manufacturing a photomask using the same. The plasma etching chamber includes an electrode having a supporting surface for supporting a photomask substrate and a top surface surrounding the supporting surface, a heat transfer element installed along a peripheral edge of the supporting surface, and a heater for supplying heat to the heat transfer element. In the method for manufacturing a photomask, a shading layer is formed on a transparent substrate. A photoresist layer pattern is formed on the shading layer to partially expose the shading layer. The shading layer is etched to form a shading layer pattern, using plasma with the photoresist layer pattern as an etching mask, under a state in which the temperature of at least one portion of the peripheral edge of the transparent substrate is maintained higher than a temperature at a center of the transparent substrate.

Abstract: A method of controlling a power source of a terminal device for communicating with a wireless wide area network, the method including: receiving a data packet; determines whether only some components of the terminal device are to be used to process the received data packet or whether an entirety of the terminal device is to be used to process the received data packet; and based on the determination result, waking up the some components of the terminal device or the entirety of the terminal device from a sleep mode to an awake mode so as to process the received data packet.

Abstract: A method, an apparatus, and a computer-readable medium to reduce power consumption of a wireless network device, the method including: receiving a packet; and determining whether to transmit the received packet to a host based on a state of the host and a packet transmission standard set for the host. Accordingly, it is possible to extend a period of use of a wireless portable terminal using an Internet protocol (IP)-based wireless network.

Abstract: A method of reproducing a compression-encoded video data stream includes receiving an input point of time at which a user desires a reproduction operation, determining the type of a picture frame corresponding to the input point of time, extracting a reference frame required for decoding the picture frame corresponding to the input point of time according to the determined type of the picture frame, and decoding the picture frame corresponding to the input point of time using the extracted reference frame and outputting the decoded picture frame.

Abstract: A plasma etching chamber of a plasma etching apparatus used in an etching process for manufacturing a photomask and a method for manufacturing a photomask using the same. The plasma etching chamber includes an electrode having a supporting surface for supporting a photomask substrate and a top surface surrounding the supporting surface, a heat transfer element installed along a peripheral edge of the supporting surface, and a heater for supplying heat to the heat transfer element. In the method for manufacturing a photomask, a shading layer is formed on a transparent substrate. A photoresist layer pattern is formed on the shading layer to partially expose the shading layer. The shading layer is etched to form a shading layer pattern, using plasma with the photoresist layer pattern as an etching mask, under a state in which the temperature of at least one portion of the peripheral edge of the transparent substrate is maintained higher than a temperature at a center of the transparent substrate.

Abstract: A data backup method and a data backup apparatus in which a part of a user data area in a volatile memory, wherein data is lost when the power is turned off, is predesignated as a backup area and data is rapidly backed up in an emergency. The data backup method includes the operations of: receiving a command related to data backup through a user interface; obtaining a backup area which is a continuous space of a desired size by adjusting backup priorities between pieces of backup object data when the backup area is to be adjusted in order to execute the command; moving and storing data of the obtained backup area to a non-volatile memory according to a predetermined condition. Accordingly, the user data backup can be rapidly and automatically executed to prevent permanent loss of a database, document file, and the like.

Abstract: A three-step method is used to repair an opaque defect in a photomask having a transparent substrate, and a light transmission portion disposed on the substrate and defining an opening the image of which is to be transferred to a layer on a semiconductor substrate. First, the thickness of the opaque defect is reduced by etching away only some of the defect. Second, a correction film is selectively formed over the entire surface of the substrate of the photomask in the opening defined by the light transmission portion with the exception of the region occupied by the pre-etched defect. Next, the correction film and the pre-etched defect are simultaneously etched away.

Abstract: A plasma etching chamber of a plasma etching apparatus used in an etching process for manufacturing a photomask and a method for manufacturing a photomask using the same. The plasma etching chamber includes an electrode having a supporting surface for supporting a photomask substrate and a top surface surrounding the supporting surface, a heat transfer element installed along a peripheral edge of the supporting surface, and a heater for supplying heat to the heat transfer element. In the method for manufacturing a photomask, a shading layer is formed on a transparent substrate. A photoresist layer pattern is formed on the shading layer to partially expose the shading layer. The shading layer is etched to form a shading layer pattern, using plasma with the photoresist layer pattern as an etching mask, under a state in which the temperature of at least one portion of the peripheral edge of the transparent substrate is maintained higher than a temperature at a center of the transparent substrate.

Abstract: A three-step method is used to repair an opaque defect in a photomask having a transparent substrate, and a light transmission portion disposed on the substrate and defining an opening the image of which is to be transferred to a layer on a semiconductor substrate. First, the thickness of the opaque defect is reduced by etching away only some of the defect. Second, a correction film is selectively formed over the entire surface of the substrate of the photomask in the opening defined by the light transmission portion with the exception of the region occupied by the pre-etched defect. Next, the correction film and the pre-etched defect are simultaneously etched away.

Abstract: Methods of fabricating a photomask including a correction exposure utilizing a correction exposure mask. The methods include exposing a photoresist with an activating agent utilizing a predetermined exposure pattern with a first exposure dosage. The photoresist is also exposed with a correction exposure dosage of an activating agent using a correction exposure pattern. The correction exposure dosage is less than the first exposure dosage. The correction exposure pattern may include a portion of the predetermined exposure pattern having a low pattern fidelity ratio. Photomasks fabricated according to the methods of the present invention are also provided.

Abstract: Compositions having the general formula (Ca.sub.x Mg.sub.1-x)Zr.sub.4 (PO.sub.4).sub.6 where x is between 0.5 and 0.99 are produced by solid state and sol-gel processes. In a preferred embodiment, when x is between 0.5 and 0.8, the MgCZP materials have near-zero coefficients of thermal expansion. The MgCZPs of the present invention also show unusually low thermal conductivities, and are stable at high temperatures. Macrostructures formed from MgCZP are useful in a wide variety of high-temperature applications. In a preferred process, calcium, magnesium, and zirconium nitrate solutions have their pH adjusted to between 7 and 9 either before or after the addition of ammonium dihydrogen phosphate. After dehydration to a gel, and calcination at temperatures in excess of 850.degree. C. for approximately 16 hours, single phase crystalline MgCZP powders with particle sizes ranging from approximately 20 nm to 50 nm result. The MgCZP powders are then sintered at temperatures ranging from 1200.degree. C. to 1350.