Patents by Inventor Jin-Seong Park
Jin-Seong Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240145346Abstract: A semiconductor device includes a substrate with a conductive pattern. A semiconductor die is electrically connected to the substrate and both the semiconductor die and the substrate are at least partially covered by a package body. In some examples, through-mold vias are formed in the package body to provide electrical signal paths from an exterior surface thereof to the conductive pattern of the substrate. In some examples, through-mold vias are included in the package body to provide electrical signal paths between the semiconductor die and an exterior surface of the package body. In some examples, an interposer is electrically connected to the through-mold vias and may be covered by the package body and/or disposed in spaced relation thereto. In some examples, the interposer may not be electrically connected to the through-mold vias but may have one or more semiconductor dies of the semiconductor device electrically connected thereto.Type: ApplicationFiled: January 8, 2024Publication date: May 2, 2024Applicant: Amkor Technology Singapore Holding Pte. LtdInventors: Dong Joo PARK, Jin Seong KIM, Ki Wook LEE, Dae Byoung KANG, Ho CHOI, Kwang Ho KIM, Jae Dong KIM, Yeon Soo JUNG, Sung Hwan CHO
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Patent number: 11966549Abstract: Disclosed is a touch sensitive display apparatus which decreases a load of each of a plurality of touch electrodes and reduces a load deviation between the plurality of touch electrodes, thereby enhancing image quality. The touch sensitive display apparatus comprises a touch sensitive panel. The touch panel comprises a plurality of touch electrodes comprising at least a first touch electrode. The first touch electrode comprises a plurality of first touch electrode lines that are parallel to each other. A first touch signal line is connected to the plurality of first touch electrode lines of the first touch electrode, and the first touch electrode is driven for image display and touch sensing via the first touch signal line. A first connecting line is in a different layer than the first touch electrode lines, and the first connecting line is connected to the plurality of first touch electrode lines.Type: GrantFiled: January 6, 2023Date of Patent: April 23, 2024Assignee: LG Display Co., Ltd.Inventors: Ju Han Kim, Yong Chan Park, Jin Seong Kim, Seung Kyeom Kim
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Patent number: 11943490Abstract: The method comprises registering at least one of an internet protocol (IP) address and a media access control (MAC) address of the security devices, generating a plurality of public key and private key pairs, encrypting and storing private keys comprised in the plurality of public key and private key pairs using a master key provided from a master key management unit, selecting any one of a plurality of public key and private key pairs when the access of the security device is approved and providing a certificate comprising the selected public key to the security device, receiving a symmetric key encrypted with the public key of the certificate from the security device, and decrypting the private key using the master key provided from the master key management unit.Type: GrantFiled: January 11, 2022Date of Patent: March 26, 2024Assignee: DUDU Information Technologies, Inc.Inventors: Young Sun Park, Su Man Nam, Jin Woo Lee, Jun Geol Kim, Yun Seong Kim, Yoon Jeong Kim
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Publication number: 20240078710Abstract: Disclosed herein are a method, an apparatus and a storage medium for encoding/decoding using a transform-based feature map. An optimal basis vector is extracted from one or more feature maps, and a transform coefficient is acquired through a transform using the basis vector. The basis vector and the transform coefficient may be transmitted through a bitstream. In an embodiment, one or more feature maps are reconstructed using the basis vector and the transform coefficient, which are decoded from the bitstream.Type: ApplicationFiled: September 1, 2023Publication date: March 7, 2024Applicant: Electronics and Telecommunications Research InstituteInventors: Youn-Hee KIM, Jooyoung LEE, Se-Yoon JEONG, Jin-Soo CHOI, Dong-Gyu SIM, Na-Seong KWON, Seung-Jin PARK, Min-Hun LEE, Han-Sol CHOI
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Patent number: 11798498Abstract: A method of manufacturing a display device including a pixel which is connected to a scan line and a data line intersecting the scan line. The pixel includes a light emitting element and a driving transistor controlling a driving current, which is supplied to the light emitting element, according to a data voltage received from the data line. The driving transistor includes a first active layer having an oxide semiconductor containing tin (Sn).Type: GrantFiled: August 15, 2022Date of Patent: October 24, 2023Assignee: Samsung Display Co., Ltd.Inventors: Joon Seok Park, Jun Hyung Lim, Jin Seong Park, Jiazhen Sheng, Tae Hyun Hong
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Publication number: 20230317855Abstract: A thin film transistor substrate and a display apparatus including the same includes a substrate; an active layer and a gate electrode on the substrate, the active layer and gate electrode being spaced apart from each other vertically; a gate insulating film including a first gate insulating film and a second gate insulating film provided between the active layer and the gate electrode; and a source electrode and a drain electrode, each of the source electrode and the drain electrode connected to the active layer. The first gate insulating film is provided closer to the gate electrode than the second gate insulating film, a dielectric constant of the first gate insulating film is higher than a dielectric constant of the second gate insulating film, and a hydrogen content of the first gate insulating film is lower than a hydrogen content of the second gate insulating film.Type: ApplicationFiled: March 28, 2023Publication date: October 5, 2023Applicants: LG Display Co., Ltd., Hanyang University Industry-University Cooperation FoundationInventors: JungSeok SEO, Jin Seong PARK, Jaeyoon PARK, Ki Lim HAN, Taewon HWANG, Won-Bum LEE
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Publication number: 20230146033Abstract: A method for manufacturing a semiconductor layer is provided. The method for manufacturing a semiconductor layer may include preparing a substrate, and conducting a first unit process of reacting a first precursor including indium (In) and a first reaction source and a second unit process of reacting a second precursor including gallium (Ga) and a second reaction source to form a semiconductor layer including the indium and the gallium on the substrate.Type: ApplicationFiled: April 14, 2021Publication date: May 11, 2023Inventors: Hyun-Kyung LEE, Jang-Hyeon SEOK, Jung-Woo PARK, Jin-Seong PARK, Tae Hyun HONG, Jiazhen SHENG, Minjung KIM
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Publication number: 20220398983Abstract: A method of manufacturing a display device including a pixel which is connected to a scan line and a data line intersecting the scan line. The pixel includes a light emitting element and a driving transistor controlling a driving current, which is supplied to the light emitting element, according to a data voltage received from the data line. The driving transistor includes a first active layer having an oxide semiconductor containing tin (Sn).Type: ApplicationFiled: August 15, 2022Publication date: December 15, 2022Inventors: Joon Seok PARK, Jun Hyung Lim, Jin Seong Park, Jiazhen Sheng, Tae Hyun Hong
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Publication number: 20220384502Abstract: An image sensor includes a substrate including a plurality of pixels and having a first surface and a second surface opposite to the first surface, a photoelectric conversion portion disposed in the substrate in each of the pixels, a transfer gate disposed on the first surface of the substrate in each of the pixels, a first interlayer insulating layer covering the substrate and the transfer gate, a first hydrogen blocking layer disposed on the first interlayer insulating layer, a first active pattern disposed on the first hydrogen blocking layer and including a metal oxide doped with nitrogen, a first gate disposed on the first active pattern, a second interlayer insulating layer covering the first gate and the first active pattern, and upper source/drain contacts penetrating the second interlayer insulating layer and contacting the first active pattern at two sides of the first gate.Type: ApplicationFiled: January 14, 2022Publication date: December 1, 2022Applicant: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)Inventors: JIN-SEONG PARK, SANGHOON UHM, TAEKSOO JEON, DONG-GYU KIM, YOON-SEO KIM, HYUN-JUN JEONG
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Publication number: 20220278298Abstract: A method for manufacturing a sealing structure may comprise the steps of: providing a substrate in a chamber; forming a first material layer containing a silicon nitride (SiNx) on the substrate; and forming a second material layer containing a silicon oxide (SiOx) on the first material layer, wherein the step of forming the first material layer and the step of forming the second material layer are performed by a plasma-enhanced atomic layer deposition (PEALD) method.Type: ApplicationFiled: August 3, 2020Publication date: September 1, 2022Applicant: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)Inventors: Jin-Seong PARK, Ju-Hwan HAN, Seong-Hyeon LEE, Seok-Goo JEONG
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Patent number: 11417282Abstract: A display device and a method of manufacturing the display device are provided. The display device comprises a pixel which is connected to a scan line and a data line intersecting the scan line, wherein the pixel comprises a light emitting element and a driving transistor controlling a driving current, which is supplied to the light emitting element, according to a data voltage received from the data line, wherein the driving transistor comprises a first active layer having an oxide semiconductor containing tin (Sn).Type: GrantFiled: February 5, 2020Date of Patent: August 16, 2022Assignees: Samsung Display Co., Ltd., IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)Inventors: Joon Seok Park, Jun Hyung Lim, Jin Seong Park, Jiazhen Sheng, Tae Hyun Hong
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Publication number: 20220208806Abstract: A display device may comprise: a substrate including a driving area and a pixel area; a first transistor on the driving area; a second transistor on the pixel area; a first hydrogen diffusion barrier film between a first active layer and a first gate insulating film of the first transistor; and a second hydrogen diffusion barrier film between a second active layer and a second gate insulating film of the second transistor.Type: ApplicationFiled: March 27, 2020Publication date: June 30, 2022Applicant: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITYInventors: Jin-Seong PARK, Seong-Hyeon LEE, Ju-Hwan HAN, Hyun-Jun JEONG
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Publication number: 20220115228Abstract: The present invention relates to technology for fabricating a gallium nitride substrate using an ion implantation process to which a self-separation technique is applied. According to the present invention, a method of fabricating a gallium nitride substrate may include a step of forming a first gallium nitride layer on a substrate, a step of implanting hydrogen ions into the first gallium nitride layer to form a separation layer, a step of grinding the edges of the substrate, the first gallium nitride layer, and the separation layer, a step of forming a second gallium nitride layer on the first gallium nitride layer having a ground edge, and a step of self-separating the second gallium nitride layer from the first gallium nitride layer having a ground edge.Type: ApplicationFiled: September 30, 2019Publication date: April 14, 2022Applicant: IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)Inventors: Jea Gun PARK, Tae Hun SHIM, Jae Hyoung SHIM, Jin Seong PARK, Jae Un LEE
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Patent number: 10815391Abstract: A photocurable composition includes (A) a photocurable monomer and (B) a silicon-containing monomer or oligomer thereof, the silicon-containing monomer being represented by Formula 1Type: GrantFiled: August 30, 2017Date of Patent: October 27, 2020Assignee: CHEIL INDUSTRIES, INC.Inventors: Chang Min Lee, Seung Jib Choi, Ji Hye Kwon, Irina Nam, Jin Seong Park, Yeon Soo Lee, Kyoung Jin Ha
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Publication number: 20200265789Abstract: A display device and a method of manufacturing the display device are provided. The display device comprises a pixel which is connected to a scan line and a data line intersecting the scan line, wherein the pixel comprises a light emitting element and a driving transistor controlling a driving current, which is supplied to the light emitting element, according to a data voltage received from the data line, wherein the driving transistor comprises a first active layer having an oxide semiconductor containing tin (Sn).Type: ApplicationFiled: February 5, 2020Publication date: August 20, 2020Inventors: Joon Seok PARK, Jun Hyung LIM, Jin Seong PARK, Jiazhen SHENG, Tae Hyun HONG
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Patent number: 10510898Abstract: A thin film transistor is provided. The thin film transistor includes a substrate, an active pattern disposed on the substrate and including a nitride, a protective pattern disposed on the active pattern and including a non-nitride, a gate electrode overlapping with the active pattern, and a gate insulating layer between the gate electrode and the active pattern.Type: GrantFiled: March 15, 2017Date of Patent: December 17, 2019Assignee: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)Inventors: Jin-Seong Park, Kyungchul Ok, Hyunjun Jeong
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Patent number: 10461198Abstract: Disclosed is a thin film transistor substrate that may include a base substrate, a first protection film disposed on the base substrate, an oxide semiconductor layer disposed on the first protection film, a gate electrode insulated from the oxide semiconductor layer and partially overlapped with at least one portion of the oxide semiconductor layer, a source electrode connected with the oxide semiconductor layer, and a drain electrode provided at a predetermined interval from the source electrode and connected with the oxide semiconductor layer, wherein the oxide semiconductor layer has a hydrogen content of 2.4 at % (atomic % or atom %)˜2.6 at %.Type: GrantFiled: December 12, 2017Date of Patent: October 29, 2019Assignee: INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITYInventors: Jin Seong Park, Kyung Chul Ock, Ki Lim Han, JongUk Bae, SeungMin Lee, JuHeyuck Baeck
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Patent number: 10396310Abstract: A display apparatus includes a display device and an encapsulation layer covering the display device. The encapsulation layer includes a first inorganic encapsulation layer, a second inorganic encapsulation layer, and a hybrid encapsulation layer positioned between the first inorganic encapsulation layer and the second inorganic encapsulation layer. The hybrid encapsulation layer includes at least one of alucone, zircone, zincone, titanicone, and nickelcone.Type: GrantFiled: February 6, 2018Date of Patent: August 27, 2019Assignees: Samsung Display Co., Ltd., IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)Inventors: Jin-Hwan Choi, Jin-Seong Park, Tae-Woong Kim, Dong-Won Choi
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Patent number: 10373661Abstract: A stacked semiconductor device includes a plurality of semiconductor dies stacked in a vertical direction, first and second signal paths, a transmission unit and a reception unit. The first and second signal paths electrically connect the plurality of semiconductor dies, where each of the first signal path and the second signal path includes at least one through-substrate via. The transmission unit generates a first driving signal and a second driving signal in synchronization with transitioning timing of a transmission signal to output the first driving signal to the first signal path and output the second driving signal to the second signal path. The reception unit receives a first attenuated signal corresponding to the first driving signal from the first signal path and receives a second attenuated signal corresponding to the second driving signal from the second signal path to generate a reception signal corresponding to the transmission signal.Type: GrantFiled: April 5, 2017Date of Patent: August 6, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Hae-Suk Lee, Reum Oh, Jin-Seong Park, Seung-Han Woo
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Patent number: 10141084Abstract: An anisotropic conductive film, the anisotropic conductive film including an insulating layer and a conductive layer laminated on the insulating layer, the conductive layer containing conductive particles, wherein after glass substrates are positioned to face each other on the upper and lower surface of the anisotropic conductive film and are pressed against the anisotropic conductive film at 3 MPa (based on the sample area) and 160° C. (based on the detection temperature of the anisotropic conductive film) for 5 sec, a ratio of the area of the insulating layer to that of the conductive layer is from about 1.3:1 to about 3.0:1.Type: GrantFiled: March 15, 2013Date of Patent: November 27, 2018Assignee: Cheil Industries, Inc.Inventors: Kyoung Soo Park, Woo Suk Lee, Woo Jun Lim, Kyung Jin Lee, Bong Yong Kim, Jin Seong Park, Dong Seon Uh, Youn Jo Ko, Jang Hyun Cho, Sang Sik Bae, Jin Kyu Kim