Abstract: The present invention provides an electronic shift range switching device (10) which is configured to control a shift range of a vehicle, the device comprising: a housing unit (100); a shifting knob unit (200) exposed at one end thereof to the outside of the housing unit (100) and disposed at the other end thereof within the hosing unit (100) in such a manner as to be rotatable with respect to the housing unit (100); and a locking correction integrated unit (300) configured to control whether or not to interrupt the rotation of the shifting knob unit (200) and to return a position of the shifting knob unit (200) to a P shift range in a self-correction manner under a predetermined condition.

Abstract: A semiconductor device includes a semiconductor pattern, a dielectric layer on the semiconductor pattern, and a conductive pattern on the dielectric layer. Each of the semiconductor pattern and the dielectric layer includes impurities. The dielectric layer includes a concentration profile of impurities including a first variation section including a first concentration of impurities decreasing throughout the dielectric layer toward the semiconductor pattern, and a second variation section including a second concentration of impurities decreasing throughout the dielectric layer toward the semiconductor pattern.

Abstract: Embodiments of the present disclosure relate to a method and system for producing refined hydrocarbons from waste plastic pyrolysis oil. The method and system for producing refined hydrocarbons from waste plastic pyrolysis oil according to the embodiments of the present disclosure may minimize formation of an ammonium salt (NH4Cl) and may prevent an adhesion phenomenon of impurity particles in a reactor in a refining process of waste plastic pyrolysis oil containing impurities including chlorine and nitrogen. In addition, the method and system for producing refined hydrocarbons according to the embodiments of the present disclosure may have excellent refining efficiency and may implement a long-term operation of a process because deactivation of a catalyst used in the process is prevented and may produce refined hydrocarbons having a low content of impurities and a high octane number from waste plastic pyrolysis oil.

Abstract: A system for supplying liquefied hydrogen includes: liquefied hydrogen storage tanks each comprising a temperature control unit controlling an internal temperature of the liquefied hydrogen storage tank to maintain an inside of the liquefied hydrogen storage tank at a low pressure; pressure tanks receiving and storing liquefied hydrogen to be supplied to a liquefied hydrogen demand site from the liquefied hydrogen storage tanks, the pressure tanks having a smaller capacity than the liquefied hydrogen storage tanks and maintained at a higher pressure than the liquefied hydrogen storage tanks; a liquefied hydrogen supply line through which liquefied hydrogen is transferred from the pressure tanks to the liquefied hydrogen demand site; and a compressor compressing boil-off hydrogen gas generated in the liquefied hydrogen storage tanks and supplying the compressed boil-off hydrogen gas to the pressure tanks to generate a pressure required for delivery.

Abstract: An electrophoretic particle according to an embodiment contains carbon black, and the electrophoretic particle comprises: a core portion; and a shell portion disposed to surround the outer surface of the core portion, wherein a protrusion portion is formed on the surface of the core portion, the core portion has a chromaticity index of 2 or less, the core portion has a light absorption rate of 90% to 99%, and the particle diameter of the electrophoretic particles is 50 nm to 800 nm.

Abstract: A method for refining waste plastic pyrolysis oil is provided, including: applying a voltage to a first mixed solution obtained by mixing waste plastic pyrolysis oil, washing water, and a demulsifier to dehydrate the first mixed solution to form a dehydrated first mixed solution; and hydrotreating a second mixed solution obtained by mixing the dehydrated first mixed solution dehydrated and a sulfur source to produce refined oil from which impurities have been removed, and a device related thereto. The method and device may prevent or minimize formation of an ammonium salt (NH4Cl) and/or prevent adhesion of impurity particles in a refining process of waste plastic pyrolysis oil containing impurities such as chlorine and nitrogen, and provides waste plastic pyrolysis oil having low content of impurities and olefins and excellent quality, and thus, may be used as a feedstock for blending with existing petroleum products or oil refining and petrochemical processes.

Abstract: An ion beam etching apparatus comprising a plasma chamber, a plasma source disposed on top of the plasma chamber and configured to generate plasma, a process chamber defining a treating area where a substrate is treated, a grid structure disposed between the process chamber and the plasma chamber, wherein the grid structure receives the plasma, and supplies ions or radicals toward the substrate, a discharge line connected to the grid structure, and a first pumping system connected to the discharge line, wherein particles or polymers within the grid structure are discharged through the discharge line.

Abstract: Embodiments of the present disclosure relate to a method for producing refined hydrocarbons from waste plastics, the method including: a pretreatment process of pretreating waste plastics; a pyrolysis process of producing pyrolysis gas by introducing the waste plastics pretreated in the pretreatment process into a pyrolysis reactor; a lightening process of producing pyrolysis oil by introducing the pyrolysis gas into a hot filter; and a distillation process of distilling the pyrolysis oil to obtain refined hydrocarbons, wherein a liquid condensed in the hot filter is re-introduced into the pyrolysis reactor, and a system for producing refined hydrocarbons from waste plastics.

Abstract: A stator includes a split-core assembly that includes a split core, a bobbin, a coil, and a terminal holder. The terminal holder has an insulating protrusion, and when two split-core assemblies are coupled to each other, the insulating protrusion of any one terminal holder overlaps the other terminal holder.

Abstract: A method of manufacturing a semiconductor device having a semiconductor die within an extended substrate and a bottom substrate may include bonding a bottom surface of a semiconductor die to a top surface of a bottom substrate, forming an adhering member to a top surface of the semiconductor die, bonding an extended substrate to the semiconductor die and to the top surface of the bottom substrate utilizing the adhering member and a conductive bump on a bottom surface of the extended substrate and a conductive bump on the bottom substrate. The semiconductor die and the conductive bumps may be encapsulated utilizing a mold member. The conductive bump on the bottom surface of the extended substrate may be electrically connected to a terminal on the top surface of the extended substrate. The adhering member may include a laminate film, a non-conductive film adhesive, or a thermal hardening liquid adhesive.

Abstract: The present invention relates to technology for fabricating a gallium nitride substrate using an ion implantation process to which a self-separation technique is applied. According to the present invention, a method of fabricating a gallium nitride substrate may include a step of forming a first gallium nitride layer on a substrate, a step of implanting hydrogen ions into the first gallium nitride layer to form a separation layer, a step of grinding the edges of the substrate, the first gallium nitride layer, and the separation layer, a step of forming a second gallium nitride layer on the first gallium nitride layer having a ground edge, and a step of self-separating the second gallium nitride layer from the first gallium nitride layer having a ground edge.

Abstract: A semiconductor device has, in a gate insulating layer, in an XPS spectrum of O 1s obtained by an X-ray photoelectron spectroscopy (XPS) using a monochromatic aluminum K? (1486.6 eV) source, a ratio (%) of an Al—O peak observed in a binding energy of about 530.3 eV to about 531.6 eV to all peaks of greater than or equal to about 80%.

Abstract: An IZO material film manufacturing method is provided. The IZO material film manufacturing method comprises the steps of: preparing a substrate; reacting a first precursor, which comprises indium (In), and a first reactant, which comprises plasma, thereby forming, on the substrate, a first material film comprising indium oxide; and reacting a second precursor, which comprises zinc (Zn), and a second reactant, which comprises plasma, thereby forming, on the first material film, a second material film comprising zinc oxide, and may comprise performing, multiple times, each of the step of forming the first material film and the step of forming the second material film, and controlling the proportion of the number of repetitions of the step of forming the second material film to the number of repetitions of the step of forming the first material film, thereby controlling the crystal growth of an IZO material film in which the first material film and the second material film are stacked.

Abstract: There is provided a semiconductor memory device having improved integration and electrical characteristics.

Abstract: A display device may comprise: a substrate including a driving area and a pixel area; a first transistor on the driving area; a second transistor on the pixel area; a first hydrogen diffusion barrier film between a first active layer and a first gate insulating film of the first transistor; and a second hydrogen diffusion barrier film between a second active layer and a second gate insulating film of the second transistor.

Abstract: A method of manufacturing a display device including a pixel which is connected to a scan line and a data line intersecting the scan line. The pixel includes a light emitting element and a driving transistor controlling a driving current, which is supplied to the light emitting element, according to a data voltage received from the data line. The driving transistor includes a first active layer having an oxide semiconductor containing tin (Sn).

Abstract: A thin film transistor substrate and a display apparatus including the same includes a substrate; an active layer and a gate electrode on the substrate, the active layer and gate electrode being spaced apart from each other vertically; a gate insulating film including a first gate insulating film and a second gate insulating film provided between the active layer and the gate electrode; and a source electrode and a drain electrode, each of the source electrode and the drain electrode connected to the active layer. The first gate insulating film is provided closer to the gate electrode than the second gate insulating film, a dielectric constant of the first gate insulating film is higher than a dielectric constant of the second gate insulating film, and a hydrogen content of the first gate insulating film is lower than a hydrogen content of the second gate insulating film.

Abstract: A method for manufacturing a semiconductor layer is provided. The method for manufacturing a semiconductor layer may include preparing a substrate, and conducting a first unit process of reacting a first precursor including indium (In) and a first reaction source and a second unit process of reacting a second precursor including gallium (Ga) and a second reaction source to form a semiconductor layer including the indium and the gallium on the substrate.

Abstract: A method of manufacturing a display device including a pixel which is connected to a scan line and a data line intersecting the scan line. The pixel includes a light emitting element and a driving transistor controlling a driving current, which is supplied to the light emitting element, according to a data voltage received from the data line. The driving transistor includes a first active layer having an oxide semiconductor containing tin (Sn).

Abstract: An image sensor includes a substrate including a plurality of pixels and having a first surface and a second surface opposite to the first surface, a photoelectric conversion portion disposed in the substrate in each of the pixels, a transfer gate disposed on the first surface of the substrate in each of the pixels, a first interlayer insulating layer covering the substrate and the transfer gate, a first hydrogen blocking layer disposed on the first interlayer insulating layer, a first active pattern disposed on the first hydrogen blocking layer and including a metal oxide doped with nitrogen, a first gate disposed on the first active pattern, a second interlayer insulating layer covering the first gate and the first active pattern, and upper source/drain contacts penetrating the second interlayer insulating layer and contacting the first active pattern at two sides of the first gate.