Abstract: A method for manufacturing a sealing structure may comprise the steps of: providing a substrate in a chamber; forming a first material layer containing a silicon nitride (SiNx) on the substrate; and forming a second material layer containing a silicon oxide (SiOx) on the first material layer, wherein the step of forming the first material layer and the step of forming the second material layer are performed by a plasma-enhanced atomic layer deposition (PEALD) method.

Abstract: A display device and a method of manufacturing the display device are provided. The display device comprises a pixel which is connected to a scan line and a data line intersecting the scan line, wherein the pixel comprises a light emitting element and a driving transistor controlling a driving current, which is supplied to the light emitting element, according to a data voltage received from the data line, wherein the driving transistor comprises a first active layer having an oxide semiconductor containing tin (Sn).

Abstract: A display device may comprise: a substrate including a driving area and a pixel area; a first transistor on the driving area; a second transistor on the pixel area; a first hydrogen diffusion barrier film between a first active layer and a first gate insulating film of the first transistor; and a second hydrogen diffusion barrier film between a second active layer and a second gate insulating film of the second transistor.

Abstract: The present invention relates to technology for fabricating a gallium nitride substrate using an ion implantation process to which a self-separation technique is applied. According to the present invention, a method of fabricating a gallium nitride substrate may include a step of forming a first gallium nitride layer on a substrate, a step of implanting hydrogen ions into the first gallium nitride layer to form a separation layer, a step of grinding the edges of the substrate, the first gallium nitride layer, and the separation layer, a step of forming a second gallium nitride layer on the first gallium nitride layer having a ground edge, and a step of self-separating the second gallium nitride layer from the first gallium nitride layer having a ground edge.

Abstract: A photocurable composition includes (A) a photocurable monomer and (B) a silicon-containing monomer or oligomer thereof, the silicon-containing monomer being represented by Formula 1

Abstract: A display device and a method of manufacturing the display device are provided. The display device comprises a pixel which is connected to a scan line and a data line intersecting the scan line, wherein the pixel comprises a light emitting element and a driving transistor controlling a driving current, which is supplied to the light emitting element, according to a data voltage received from the data line, wherein the driving transistor comprises a first active layer having an oxide semiconductor containing tin (Sn).

Abstract: A thin film transistor is provided. The thin film transistor includes a substrate, an active pattern disposed on the substrate and including a nitride, a protective pattern disposed on the active pattern and including a non-nitride, a gate electrode overlapping with the active pattern, and a gate insulating layer between the gate electrode and the active pattern.

Abstract: Disclosed is a thin film transistor substrate that may include a base substrate, a first protection film disposed on the base substrate, an oxide semiconductor layer disposed on the first protection film, a gate electrode insulated from the oxide semiconductor layer and partially overlapped with at least one portion of the oxide semiconductor layer, a source electrode connected with the oxide semiconductor layer, and a drain electrode provided at a predetermined interval from the source electrode and connected with the oxide semiconductor layer, wherein the oxide semiconductor layer has a hydrogen content of 2.4 at % (atomic % or atom %)˜2.6 at %.

Abstract: A display apparatus includes a display device and an encapsulation layer covering the display device. The encapsulation layer includes a first inorganic encapsulation layer, a second inorganic encapsulation layer, and a hybrid encapsulation layer positioned between the first inorganic encapsulation layer and the second inorganic encapsulation layer. The hybrid encapsulation layer includes at least one of alucone, zircone, zincone, titanicone, and nickelcone.

Abstract: A stacked semiconductor device includes a plurality of semiconductor dies stacked in a vertical direction, first and second signal paths, a transmission unit and a reception unit. The first and second signal paths electrically connect the plurality of semiconductor dies, where each of the first signal path and the second signal path includes at least one through-substrate via. The transmission unit generates a first driving signal and a second driving signal in synchronization with transitioning timing of a transmission signal to output the first driving signal to the first signal path and output the second driving signal to the second signal path. The reception unit receives a first attenuated signal corresponding to the first driving signal from the first signal path and receives a second attenuated signal corresponding to the second driving signal from the second signal path to generate a reception signal corresponding to the transmission signal.

Abstract: An anisotropic conductive film, the anisotropic conductive film including an insulating layer and a conductive layer laminated on the insulating layer, the conductive layer containing conductive particles, wherein after glass substrates are positioned to face each other on the upper and lower surface of the anisotropic conductive film and are pressed against the anisotropic conductive film at 3 MPa (based on the sample area) and 160° C. (based on the detection temperature of the anisotropic conductive film) for 5 sec, a ratio of the area of the insulating layer to that of the conductive layer is from about 1.3:1 to about 3.0:1.

Abstract: A display apparatus includes a display device and an encapsulation layer covering the display device. The encapsulation layer includes a first inorganic encapsulation layer, a second inorganic encapsulation layer, and a hybrid encapsulation layer positioned between the first inorganic encapsulation layer and the second inorganic encapsulation layer. The hybrid encapsulation layer includes at least one of alucone, zircone, zincone, titanicone, and nickelcone.

Abstract: Disclosed is a thin film transistor substrate that may include a base substrate, a first protection film disposed on the base substrate, an oxide semiconductor layer disposed on the first protection film, a gate electrode insulated from the oxide semiconductor layer and partially overlapped with at least one portion of the oxide semiconductor layer, a source electrode connected with the oxide semiconductor layer, and a drain electrode provided at a predetermined interval from the source electrode and connected with the oxide semiconductor layer, wherein the oxide semiconductor layer has a hydrogen content of 2.4 at % (atomic % or atom %)˜2.6 at %.

Abstract: A photocurable composition includes (A) a photocurable monomer and (B) a silicon-containing monomer or oligomer thereof, the silicon-containing monomer being represented by Formula 1

Abstract: A stacked semiconductor device includes a plurality of semiconductor dies stacked in a vertical direction, first and second signal paths, a transmission unit and a reception unit. The first and second signal paths electrically connect the plurality of semiconductor dies, where each of the first signal path and the second signal path includes at least one through-substrate via. The transmission unit generates a first driving signal and a second driving signal in synchronization with transitioning timing of a transmission signal to output the first driving signal to the first signal path and output the second driving signal to the second signal path. The reception unit receives a first attenuated signal corresponding to the first driving signal from the first signal path and receives a second attenuated signal corresponding to the second driving signal from the second signal path to generate a reception signal corresponding to the transmission signal.

Abstract: A thin film transistor is provided. The thin film transistor includes a substrate, an active pattern disposed on the substrate and including a nitride, a protective pattern disposed on the active pattern and including a non-nitride, a gate electrode overlapping with the active pattern, and a gate insulating layer between the gate electrode and the active pattern.

Abstract: The present invention is related to hydrophilic silicone powders and the methods to prepare the same that contain 1-30 mol % of units selected from a group consisting of (a) partially hydrolyzed silsesquioxane containing one hydroxyl group (T2) and silica (Q3), (b) partially hydrolyzed silsesquioxane containing two hydroxyl groups (T1) and silica (Q3), (c) silica containing three hydroxyl groups (Q1), hydrolyzed silicone containing siloxane (D1), and mixtures thereof, and hydrophilic silicone powders consisting of core described above and shells composed of silica, and/or titanium dioxide. The particles are useful as ingredients for cosmetics and emulsions because they have good heat resistance, good touching feeling, and readily disperse in water due to their hydrophilic nature and high water absorbency.

Abstract: A metal-oxide sintered body for a temperature sensor that can be installed in a combustion engine and components connected to the engine in order to sense temperature uses metal oxide. The metal-oxide sintered body has particles with large resistance values and particles with small resistance values mixed therein. The particles with the small resistance values may serve as a main resistance component in the temperature range of 0° C. to 500° C., and the particles with the large resistance values may contribute to the total resistance in proportion to the mixing ratio in the temperature range of 500° C. to 900° C. Thus, the metal-oxide sintered body enables a single sensor to measure all resistances, and can be used in an exhaust device or the like of a motor vehicle that requires temperature measurement over a wide range of temperatures.

Abstract: A composite material for a temperature sensor and a method of manufacturing the temperature sensor using the composite material are provided. The composite material contains four or more kinds of metal oxides combined with highly insulating materials to produce a material with semiconductor-like properties to more accurately measure a temperature at high temperatures in the range of 500° C. and above. The sensor includes electrode wires having a predetermined diameter inserted into the metal oxide of the temperature sensor when the metal oxide is press-molded to form the temperature sensor. Through the connection of the electrode wires to the temperature sensor device, disconnection of the electrode wires from the device even at a high temperature.

Abstract: An optical member includes an anisotropic conductive film that has a multilayer structure having a bonding layer containing an epoxy resin as a curing part and a bonding layer containing a (meth)acrylate resin as a curing part.