Abstract: A neural network model training method and apparatus are provided. The method includes a first training operation of training the neural network model with original data, the first training operation including generating a first feature map for the original data, and generating a first class activation map for the original data from the generated first feature map, and a second training operation of training the neural network model with adversarial data transformed from the original data, the second training operation including generating a second feature map for the adversarial data, generating a second class activation map for the adversarial data from the generated second feature map, and training the neural network model so that the second class activation map follows the first class activation map based on logit pairing for the first and second class activation maps.

Abstract: A side outer extraction method may include receiving, by at least one processor, an image, of a vehicle, preprocessed from three-dimensional (3D) data from a computer-aided design (CAD) module, detecting, using an artificial intelligence model, a classification value and a bounding box for each region, of a plurality of regions, corresponding to one of a plurality of target references of the preprocessed image, transmitting, to the CAD module, a signal indicating the classification value and the bounding box for each region of the plurality of regions, and causing extraction, by the CAD module, of the plurality of target references from the classification value and the bounding box for each region of the plurality of regions, based on the received signal.

Abstract: A side outer extraction method may include receiving, by at least one processor, an image, of a vehicle, preprocessed from three-dimensional (3D) data from a computer-aided design (CAD) module, detecting, using an artificial intelligence model, a classification value and a bounding box for each region, of a plurality of regions, corresponding to one of a plurality of target references of the preprocessed image, transmitting, to the CAD module, a signal indicating the classification value and the bounding box for each region of the plurality of regions, and causing extraction, by the CAD module, of the plurality of target references from the classification value and the bounding box for each region of the plurality of regions, based on the received signal.

Abstract: A light-emitting element package is provided. The light-emitting element package includes light-emitting structures spaced from each other, the light-emitting structures including first, second and third light-emitting structures, each of the light-emitting structures being configured to emit light of a first color; a first wavelength conversion layer provided on the first light-emitting structure at a first position corresponding to the first light-emitting structure, the first wavelength conversion layer being configured to convert light of the first color into light of a second color; a first oxide film provided on the first wavelength conversion layer; and a second wavelength conversion layer disposed in the first oxide film at a second position corresponding to the second light-emitting structure, the second wavelength conversion layer being configured to convert light of the first color into light of a third color.

Abstract: A neural network model training method and apparatus are provided. The method includes a first training operation of training the neural network model with original data, the first training operation including generating a first feature map for the original data, and generating a first class activation map for the original data from the generated first feature map, and a second training operation of training the neural network model with adversarial data transformed from the original data, the second training operation including generating a second feature map for the adversarial data, generating a second class activation map for the adversarial data from the generated second feature map, and training the neural network model so that the second class activation map follows the first class activation map based on logit pairing for the first and second class activation maps.

Abstract: A light emitting device package including a partition structure having first and second surfaces, and first to third light emission windows penetrating through the first and second surfaces, a cell array including first to third light emitting devices on the first surface of the partition structure and overlapping the first to third light emission windows, each of the first to third light emitting devices including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, first and second wavelength conversion portions filling interiors of the first and second light emission windows, and having a meniscus-shaped interfaces, a first encapsulating portion including a light-transmissive organic film layer that fills the third light emission window and covers the first and second wavelength conversion portions, and a second encapsulating portion covering the first and second encapsulating portions and including a light-transmissive inorganic film layer.

Abstract: A light-emitting element package is provided. The light-emitting element package includes light-emitting structures spaced from each other, the light-emitting structures including first, second and third light-emitting structures, each of the light-emitting structures being configured to emit light of a first color; a first wavelength conversion layer provided on the first light-emitting structure at a first position corresponding to the first light-emitting structure, the first wavelength conversion layer being configured to convert light of the first color into light of a second color; a first oxide film provided on the first wavelength conversion layer; and a second wavelength conversion layer disposed in the first oxide film at a second position corresponding to the second light-emitting structure, the second wavelength conversion layer being configured to convert light of the first color into light of a third color.

Abstract: A light emitting device package includes a light emitting structure including a first light emitting cell, a second light emitting cell, and a third light emitting cell, each of the first to third light emitting cells including an active layer to emit light of a first wavelength in a first direction and being separated from each other in a second direction, orthogonal to the first direction, a first light adjusting portion including a first wavelength conversion layer in a first recess portion of the first light emitting cell, the first wavelength conversion layer to convert light of the first wavelength to light of a second wavelength, and a second light adjusting portion including a second wavelength conversion layer in a second recess portion of the second light emitting cell, the second wavelength conversion layer to convert light of the first wavelength to light of a third wavelength.

Abstract: A method of manufacturing a light emitting device includes forming light emitting devices on a support portion, each of the light emitting devices including first to third light emitting cells respectively emitting light of different colors; supplying test power to at least a portion of the light emitting devices using a multi-probe; acquiring an image from the light emitted from the portion of the light emitting devices to which the test power is supplied using an image sensor; identifying normal light emitting devices of the portion of the light emitting devices by determining whether a defect is present in each of the light emitting devices of the portion of the light emitting devices by comparing the image acquired by the image sensor with a reference image; and based on the identifying step, measuring optical characteristics of each of the light emitting devices identified as normal of the portion of the light emitting devices.

Abstract: A light emitting device package including a cell array including first, second and third light emitting devices each including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, the cell array having a first surface and a second surface opposing the first surface, a light-transmissive substrate including a first wavelength conversion portion and a second wavelength conversion portion corresponding to the first light emitting device and the second light emitting device, respectively, and bonded to the first surface, and a eutectic bonding layer including a first light emitting window, a second light emitting window and a third light emitting window corresponding to the first light emitting device, the second light emitting device and the third light emitting device, respectively, and bonding the light-transmissive substrate and the first to third light emitting devices to each other may be provided.

Abstract: A light emitting diode module includes a cell array including first to fourth light emitting diode cells, each cell having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, the cell array having a first surface and a second surface opposite to the first surface; first to fourth light adjusting portions on the second surface of the cell array to respectively correspond to the first to fourth light emitting diode cells, to provide red light, first green light, second green light, and blue light, respectively; light blocking walls between the first to fourth light adjusting portions to isolate the first to fourth light adjusting portions from one another; and an electrode portion on the first surface of the cell array, and electrically connected to the first to fourth light emitting diode cells to selectively drive the first to fourth light emitting diode cells.

Abstract: A light emitting device package including a partition structure having first and second surfaces, and first to third light emission windows penetrating through the first and second surfaces, a cell array including first to third light emitting devices on the first surface of the partition structure and overlapping the first to third light emission windows, each of the first to third light emitting devices including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, first and second wavelength conversion portions filling interiors of the first and second light emission windows, and having a meniscus-shaped interfaces, a first encapsulating portion including a light-transmissive organic film layer that fills the third light emission window and covers the first and second wavelength conversion portions, and a second encapsulating portion covering the first and second encapsulating portions and including a light-transmissive inorganic film layer.

Abstract: A semiconductor light emitting device includes a first light emitting portion including a first semiconductor stack, as well as a first lower dispersion Bragg reflector (DBR) layer and a first upper dispersion Bragg reflector (DBR) layer, disposed above and below the first semiconductor stack, a second light emitting portion including a second semiconductor stack, as well as a second lower dispersion Bragg reflector (DBR) layer and a second upper dispersion Bragg reflector (DBR) layer, disposed above and below the second semiconductor stack, a third light emitting portion including a third semiconductor stack, as well as a third lower dispersion Bragg reflector (DBR) layer and a third upper dispersion Bragg reflector (DBR) layer, disposed above and below the third semiconductor stack, a first bonding layer disposed between the first light emitting portion and the second light emitting portion, and a second bonding layer disposed between the second light emitting portion and the third light emitting portion.

Abstract: A chip mounting method includes providing a first substrate including a light transmissive substrate having first and second surfaces, a sacrificial layer provided on the first surface, and a plurality of chips bonded to the sacrificial layer, obtaining first mapping data by testing the chips, the first mapping data defining coordinates of normal chips and defective chips among the chips, disposing a second substrate below the first surface, disposing the normal chips on the second substrate by radiating a first laser beam to positions of the sacrificial layer corresponding to the coordinates of the normal chips, based on the first mapping data, to remove portions of the sacrificial layer thereby separating the normal chips from the light transmissive substrate, and mounting the normal chips on the second substrate by radiating a second laser beam to a solder layer of the second substrate.

Abstract: A pixel of a light emitting diode module, display panel or other device, may comprise different colored sub-pixels, where one of the sub-pixels comprises a wavelength converting material, such as phosphor, to convert light emitted from an associated light emitting diode of that sub-pixel into a color other than the main color of light emitted from that sub-pixel. The wavelength converting material may have an amount selected to tune the color coordinates of the pixel. The amount of wavelength converting material may be determined in response to measuring the intensity of the spectrum of light emitted by the light emitting diode of the sub-pixel, or similarly manufactured sub-pixels, on which the wavelength converting material is to be formed. Methods of manufacturing the same are also disclosed.

Abstract: A pixel of a light emitting diode module, display panel or other device, may comprise different colored sub-pixels, where one of the sub-pixels comprises a wavelength converting material, such as phosphor, to convert light emitted from an associated light emitting diode of that sub-pixel into a color other than the main color of light emitted from that sub-pixel. The wavelength converting material may have an amount selected to tune the color coordinates of the pixel. The amount of wavelength converting material may be determined in response to measuring the intensity of the spectrum of light emitted by the light emitting diode of the sub-pixel, or similarly manufactured sub-pixels, on which the wavelength converting material is to be formed. Methods of manufacturing the same are also disclosed.

Abstract: A semiconductor light emitting device includes a first light emitting portion including a first semiconductor stack, as well as a first lower dispersion Bragg reflector (DBR) layer and a first upper dispersion Bragg reflector (DBR) layer, disposed above and below the first semiconductor stack, a second light emitting portion including a second semiconductor stack, as well as a second lower dispersion Bragg reflector (DBR) layer and a second upper dispersion Bragg reflector (DBR) layer, disposed above and below the second semiconductor stack, a third light emitting portion including a third semiconductor stack, as well as a third lower dispersion Bragg reflector (DBR) layer and a third upper dispersion Bragg reflector (DBR) layer, disposed above and below the third semiconductor stack, a first bonding layer disposed between the first light emitting portion and the second light emitting portion, and a second bonding layer disposed between the second light emitting portion and the third light emitting portion.

Abstract: A light emitting device package including a cell array including first, second and third light emitting devices each including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, the cell array having a first surface and a second surface opposing the first surface, a light-transmissive substrate including a first wavelength conversion portion and a second wavelength conversion portion corresponding to the first light emitting device and the second light emitting device, respectively, and bonded to the first surface, and a eutectic bonding layer including a first light emitting window, a second light emitting window and a third light emitting window corresponding to the first light emitting device, the second light emitting device and the third light emitting device, respectively, and bonding the light-transmissive substrate and the first to third light emitting devices to each other may be provided.

Abstract: A method of manufacturing a light emitting device includes forming light emitting devices on a support portion, each of the light emitting devices including first to third light emitting cells respectively emitting light of different colors; supplying test power to at least a portion of the light emitting devices using a multi-probe; acquiring an image from the light emitted from the portion of the light emitting devices to which the test power is supplied using an image sensor; identifying normal light emitting devices of the portion of the light emitting devices by determining whether a defect is present in each of the light emitting devices of the portion of the light emitting devices by comparing the image acquired by the image sensor with a reference image; and based on the identifying step, measuring optical characteristics of each of the light emitting devices identified as normal of the portion of the light emitting devices.

Abstract: A chip mounting method includes providing a first substrate including a light transmissive substrate having first and second surfaces, a sacrificial layer provided on the first surface, and a plurality of chips bonded to the sacrificial layer, obtaining first mapping data by testing the chips, the first mapping data defining coordinates of normal chips and defective chips among the chips, disposing a second substrate below the first surface, disposing the normal chips on the second substrate by radiating a first laser beam to positions of the sacrificial layer corresponding to the coordinates of the normal chips, based on the first mapping data, to remove portions of the sacrificial layer thereby separating the normal chips from the light transmissive substrate, and mounting the normal chips on the second substrate by radiating a second laser beam to a solder layer of the second substrate.