Patents by Inventor Jin Sub Lee

Jin Sub Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR LIGHT EMTTING DEVICE
    Publication number: 20140042454
    Abstract: A semiconductor light emitting device includes a substrate, a buffer layer disposed on the substrate, the buffer layer comprising aluminum nitride, a composition grading layer disposed on the buffer layer, the composition grading layer comprising first aluminum nitride and second aluminum nitride, a capping layer disposed on the composition grading layer, and a cladding layer disposed on the capping layer. A composition of the first aluminum nitride and a composition of the second aluminum nitride change gradually in an alternating manner.
    Type: Application
    Filed: July 17, 2013
    Publication date: February 13, 2014
    Inventors: Jin Sub LEE, Jung Sub KIM, Cheol Soo SONE
  • SEMICONDUCTOR LIGHT EMITTING DEVICE WITH DOPED BUFFER LAYER AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20140014897
    Abstract: According to example embodiments, a semiconductor light emitting device including a doped buffer layer includes a substrate and a buffer layer on the substrate. The doping layer may include aluminum nitride (AlN) and the buffer layer may include a doping layer. An n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer may be on the buffer layer. An n-side electrode may be on the n-type nitride semiconductor layer. A p-side electrode may be on the p-type nitride semiconductor layer.
    Type: Application
    Filed: June 20, 2013
    Publication date: January 16, 2014
    Inventors: Jung-sub KIM, Denis SANNIKOV, Cheol-soo SONE, Jin-sub LEE
  • SEMICONDUCTOR LIGHT-EMITTING DEVICES INCLUDING CONTACT LAYERS TO FORM REFLECTIVE ELECTRODES
    Publication number: 20140008608
    Abstract: A semiconductor light-emitting device includes a contact layer. The contact layer has the composition ratio of Al elements which varies gradually therein. A region formed by an Al element in the contact layer of the semiconductor light-emitting device may improve light extraction efficiency of the light emitted from an active layer and facilitate a formation of the reflective electrode.
    Type: Application
    Filed: March 14, 2013
    Publication date: January 9, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jung-Sub KIM, Sung-Won HWANG, Geun-Woo KO, Cheol-Soo SONE, Sung-Hyun SIM, Jin-Sub LEE
  • Injector and Material Layer Deposition Chamber Including the Same
    Publication number: 20130319333
    Abstract: An injector and a material layer deposition chamber including the same. An injector includes: a plurality of independent sections; and a gas inlet and a gas outlet that are provided in each of the plurality of independent sections, wherein gas outlets provided in two adjacent sections are positioned and configured to inject gas in a limited and different direction relative to each other.
    Type: Application
    Filed: June 4, 2013
    Publication date: December 5, 2013
    Inventors: Jin-sub Lee, Min-seok Kim, Jung-sub Kim, Cheol-soo Sone
  • n-AlGaN THIN FILM AND ULTRAVIOLET LIGHT EMITTING DEVICE INCLUDING THE SAME
    Publication number: 20130307001
    Abstract: An n-type aluminum gallium nitride (AlGaN) thin film and an ultraviolet light emitting device including the same. The ultraviolet light emitting device includes: an aluminum nitride (AlN) buffer layer on a substrate; and an n-type AlGaN layer, an active layer, a p-type AlGaN layer that are sequentially stacked on the AlN buffer layer. A silicon doping density of the n-type AlGaN layer increases with respect to an increasing vertical position of the n-AlGaN layer with reference to the AlN buffer layer.
    Type: Application
    Filed: March 15, 2013
    Publication date: November 21, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jin-sub Lee, Jung-sub Kim, Cheol-soo Sone
  • NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20130056747
    Abstract: A nitride semiconductor light emitting device and a manufacturing method thereof are provided. The nitride semiconductor light emitting device includes: forming a first conductivity-type nitride semiconductor layer on a substrate; forming an active layer on the first conductivity-type nitride semiconductor layer; and forming a second conductivity-type nitride semiconductor layer on the active layer. High output can be obtained by increasing doping efficiency in growing the conductivity type nitride semiconductor layer.
    Type: Application
    Filed: August 27, 2012
    Publication date: March 7, 2013
    Inventors: Jin Sub LEE, Jung Sup Kim, Seong Suk Lee, Tae Young Park, Cheol Soo Sone
  • APPARATUS AND METHOD FOR SEQUENTIALLY PARSING BITSTREAMS BASED ON REMOVAL OF EMULATION PREVENTION BYTE
    Publication number: 20120155551
    Abstract: An apparatus and method sequentially parses bitstreams based on a removal of an Emulation Prevention Byte (EPB). The apparatus and method may detect an EPB pattern from among sequentially input bitstreams, may store the bitstreams, may store a processed bitstream where the EPB pattern is removed, among the bitstreams, and may select an output of a register buffer based on an input of a buffer selection flag.
    Type: Application
    Filed: December 20, 2011
    Publication date: June 21, 2012
    Applicants: KWANGWOON UNIVERSITY INDUSTRY-ACADEMIC COLLABORATION FOUNDATION, SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Donggyu SIM, Doo Hyun KIM, Joon Ho SONG, Shi Hwa LEE, Do Hyung KIM, Hyun Ho CHO, Jin Sub LEE, Jeong Han SEO
  • Speaker system having a front speaker integrated with a reflection-type surround speaker
    Patent number: 7362874
    Abstract: A surround speaker system according to the present invention includes an integral speaker in which a surround speaker is integrally formed with a front speaker, a canceling device for canceling a directly propagating sound of the surround speaker, and a reflective device for reflecting the output sound of the surround speaker.
    Type: Grant
    Filed: December 21, 2003
    Date of Patent: April 22, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jin Sub Lee, Takashi Ohyaba, Masao Gibo, Hyeon Goo Yoon
  • Speaker system having a front speaker integrated with a reflection-type surround speaker
    Publication number: 20040136553
    Abstract: A surround speaker system according to the present invention includes an integral speaker in which a surround speaker is integrally formed with a front speaker, a canceling device for canceling a directly propagating sound of the surround speaker, and a reflective device for reflecting the output sound of the surround speaker.
    Type: Application
    Filed: December 21, 2003
    Publication date: July 15, 2004
    Applicant: Bluetek Co., Ltd.
    Inventors: Jin Sub Lee, Takashi Ohyaba, Masao Gibo, Hyeon Goo Yoon