Abstract: Provided is a duct docking device for a ventilation seat of a vehicle. The duct docking device enables air to be easily blown to a seatback and a seat cushion with a passenger in a seat using only one blower by enabling a seatback duct mounted at the seatback and a seat cushion duct mounted at the seat cushion to be hermetically docked through a connector duct, etc. at an unfolded position of the seatback in which a passenger can sit, and by enabling the seatback duct mounted at the seatback and the seat cushion duct mounted at the seat cushion to be separated from each other at a folded position of the seatback in consideration of that there is no passenger in the seat.

Abstract: The present invention provides methods for treating or ameliorating metabolic diseases, cholestatic liver diseases, or organ fibrosis, which comprises administering to a subject a therapeutically effective amount of a pharmaceutical composition comprising an isoxazole derivative, a racemate, an enantiomer, or a diastereoisomer thereof, or a pharmaceutically acceptable salt of the derivative, the racemate, the enantiomer, or the diastereoisomer.

Abstract: An embodiment of the present invention relates to a secondary battery comprising: an electrode assembly which has an anode tab formed at one end thereof and a cathode tab formed at the other end thereof; a case in which the electrode assembly is received and which is open at both opposite ends thereof; and a pair of cap assemblies which are coupled to the respective open ends of the case.

Abstract: An embodiment of the present invention relates to a secondary battery comprising: an electrode assembly which has an anode tab formed at one end thereof and a cathode tab formed at the other end thereof; a case in which the electrode assembly is received and which is open at both opposite ends thereof; and a pair of cap assemblies which are coupled to the respective open ends of the case. According to the present invention, the cap assemblies are formed at the opposite sides of the case and thus cathode and anode terminals of the cap assemblies can have the same direction as the cathode and anode tabs of the electrode assembly, which makes it possible to simplify the shape of and minimize the length of a current collector.

Abstract: An embodiment of the present invention relates to a secondary battery comprising: an electrode assembly which has an anode tab formed at one end thereof and a cathode tab formed at the other end thereof; a case in which the electrode assembly is received and which is open at both opposite ends thereof; and a pair of cap assemblies which are coupled to the respective open ends of the case. According to the present invention, the cap assemblies are formed at the opposite sides of the case and thus cathode and anode terminals of the cap assemblies can have the same direction as the cathode and anode tabs of the electrode assembly, which makes it possible to simplify the shape of and minimize the length of a current collector.

Abstract: A secondary battery including an electrode assembly including a first electrode plate having a first electrode substrate tab thereon, a second electrode plate having a second electrode substrate tab thereon, and a separator between the first electrode plate and the second electrode plate; a pouch accommodating the electrode assembly; and strip terminals respectively welded to the first electrode substrate tab and the second electrode substrate tab, wherein the first electrode substrate tab and one of the strip terminals are welded to one another in a state in which the first electrode substrate tab and the one strip terminal are bent at least once, and the second electrode substrate tab and another of the strip terminals are welded to one another in a state in which the second electrode substrate tab and the other strip terminal are bent at least once.

Abstract: An embodiment of the present invention relates to a secondary battery comprising: an electrode assembly which has an anode tab formed at one end thereof and a cathode tab formed at the other end thereof; a case in which the electrode assembly is received and which is open at both opposite ends thereof; and a pair of cap assemblies which are coupled to the respective open ends of the case. According to the present invention, the cap assemblies are formed at the opposite sides of the case and thus cathode and anode terminals of the cap assemblies can have the same direction as the cathode and anode tabs of the electrode assembly, which makes it possible to simplify the shape of and minimize the length of a current collector.

Abstract: Provided are an image sensor and an imaging device including the same. The image sensor is configured to generate illuminance data by receiving a light signal including image information of an object and ambient light information and includes a sensing module including a pixel array including a plurality of unit pixels, configured to sense the light signal irradiated to the pixel array and to generate pixel data corresponding to the sensed light signal, and an illuminance data generator configured to generate illuminance data corresponding to ambient light based on the pixel data, wherein the illuminance data generator is configured to generate the illuminance data based on pixel data when the light signal is not focused on the pixel array.

Abstract: Provided are an image sensor and an imaging device including the same. The image sensor is configured to generate illuminance data by receiving a light signal including image information of an object and ambient light information and includes a sensing module including a pixel array including a plurality of unit pixels, configured to sense the light signal irradiated to the pixel array and to generate pixel data corresponding to the sensed light signal, and an illuminance data generator configured to generate illuminance data corresponding to ambient light based on the pixel data, wherein the illuminance data generator is configured to generate the illuminance data based on pixel data when the light signal is not focused on the pixel array.

Abstract: A raw material supply system for supplying a fixed amount of raw material necessary for ingot growth is disclosed. The system includes a support unit, an enclosure, a fixed amount supply unit, a hopper for supplying raw material to the fixed amount supply unit, a dopant supply unit for supplying a predetermined amount of dopant into the enclosure, a supply pipe for supplying a fixed amount of raw material and dopant to a crucible, a lifting mechanism for moving the supply pipe upward and downward, a moving mechanism for protruding an inclined chute to an upper part of the supply pipe, and a load cell mounted between the support unit and the enclosure for sensing the weight of the supplied raw material and inputting the sensed weight of the raw material to a controller.

Abstract: An ingot growing apparatus. A main chamber includes a crucible accommodating a source material therein and a heater melting the source material by heating the crucible. A dome chamber is disposed on top of the crucible. A pull chamber is disposed on top of the dome chamber. An ingot grown in the crucible moves via a seed cable within the dome chamber and the pull chamber. A weight-measuring unit is disposed on top of the pull chamber. The weight-measuring unit includes a housing disposed on top of the pull chamber, with the interior thereof being maintained in a vacuum state, a support roller disposed within the housing to support the seed cable, and a load cell disposed outside of the housing to measure a weight of the ingot supported by the support roller.

Abstract: An ingot growing apparatus. A main chamber includes a crucible accommodating a source material therein and a heater melting the source material by heating the crucible. A dome chamber is disposed on top of the crucible. A pull chamber is disposed on top of the dome chamber. An ingot grown in the crucible moves via a seed cable within the dome chamber and the pull chamber. A weight-measuring unit is disposed on top of the pull chamber. The weight-measuring unit includes a housing disposed on top of the pull chamber, with the interior thereof being maintained in a vacuum state, a support roller disposed within the housing to support the seed cable, and a load cell disposed outside of the housing to measure a weight of the ingot supported by the support roller.

Abstract: A raw material supply system for supplying a fixed amount of raw material necessary for ingot (single crystal silicon) growth is disclosed.

Abstract: Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1-x1-y1)N (where 0?x1?1, 0?y1?1, and 0?x1+y1?1), a multiple quantum well-structured active layer made of undoped InAGa1-AN (where 0<A<1) formed on the n-type clad layer, and a p-type clad layer formed on the active layer wherein the p-type clad layer includes at least a first layer made of p-type Iny2Ga1-y2N (where 0?y2<1) formed on the active layer and a second layer made of p-type Alx3Iny3Ga(1-x3-y3)N (where 0<x3?1, 0?y3?1, and 0<x3+y3?1) formed on the first layer.

Abstract: Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1-x1-y1)N (where 0?x1?1, 0?y1?1, and 0?x1+y1?1), a multiple quantum well-structured active layer made of undoped InAGa1-AN (where 0<A<1) formed on the n-type clad layer, and a p-type clad layer formed on the active layer wherein the p-type clad layer includes at least a first layer made of p-type Iny2Ga1-y2N (where 0?y2<1) formed on the active layer and a second layer made of p-type Alx3Iny3Ga(1-x3-y3)N (where 0<x3?1, 0?y3?1, and 0<x3+y3?1) formed on the first layer.

Abstract: Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1-x1-y1)N (where 0?x1?1, 0?y1?1, and 0?x1+y1?1), a multiple quantum well-structured active layer made of undoped InAGa1-AN (where 0<A<1) formed on the n-type clad layer, and a p-type clad layer formed on the active layer wherein the p-type clad layer includes at least a first layer made of p-type Iny2Ga1-y2N (where 0?y2<1) formed on the active layer and a second layer made of p-type Alx3Iny3Ga(1-x3-y3)N (where 0<x3?1, 0?y3?1, and 0<x3+y3?1) formed on the first layer.

Abstract: A nitride semiconductor light emitting device and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device comprises an n-type nitride semiconductor layer formed on a substrate, an active layer formed on the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed on the active layer, an undoped GaN layer formed on the p-type nitride semiconductor layer, an AlGaN layer formed on the undoped GaN layer to form a two-dimensional electron gas (2DEG) layer at a bonding interface between the AlGaN layer and the undoped GaN layer, and an n-side electrode and a p-side electrode respectively formed on the n-type nitride semiconductor layer and the AlGaN layer to be connected to each other. As a hetero-junction structure of GaN/AlGaN is formed on the p-type nitride semiconductor layer, contact resistance between the p-type nitride semiconductor layer and the p-side electrode is enhanced by virtue of tunneling effect through the 2DEG layer.

Abstract: A nitride semiconductor light emitting device and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device comprises an n-type nitride semiconductor layer formed on a substrate, an active layer formed on the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed on the active layer, an undoped GaN layer formed on the p-type nitride semiconductor layer, an AlGaN layer formed on the undoped GaN layer to form a two-dimensional electron gas (2DEG) layer at a bonding interface between the AlGaN layer and the undoped GaN layer, and an n-side electrode and a p-side electrode respectively formed on the n-type nitride semiconductor layer and the AlGaN layer to be connected to each other. As a hetero-junction structure of GaN/AlGaN is formed on the p-type nitride semiconductor layer, contact resistance between the p-type nitride semiconductor layer and the p-side electrode is enhanced by virtue of tunneling effect through the 2DEG layer.

Abstract: A nitride semiconductor light emitting device and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device comprises an n-type nitride semiconductor layer formed on a substrate, an active layer formed on the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed on the active layer, an undoped GaN layer formed on the p-type nitride semiconductor layer, an AlGaN layer formed on the undoped GaN layer to form a two-dimensional electron gas (2DEG) layer at a bonding interface between the AlGaN layer and the undoped GaN layer, and an n-side electrode and a p-side electrode respectively formed on the n-type nitride semiconductor layer and the AlGaN layer to be connected to each other. As a hetero-junction structure of GaN/AlGaN is formed on the p-type nitride semiconductor layer, contact resistance between the p-type nitride semiconductor layer and the p-side electrode is enhanced by virtue of tunneling effect through the 2DEG layer.

Abstract: Provided is a nitride semiconductor light emitting device having enhanced output power and resistance to electrostatic discharge. The light emitting device comprises an n-side contact layer formed on a substrate, a current diffusion layer formed on the n-side contact layer, an active layer formed on the current diffusion layer, and a p-type clad layer formed on the active layer. The current diffusion layer is formed by alternately stacking at least one first InAlGaN layer having a higher electron concentration than that of the n-side contact layer and at least one second InAlGaN layer having a lower electron concentration than that of the n-side contact layer.