Abstract: A nitride semiconductor light emitting device and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device comprises an n-type nitride semiconductor layer formed on a substrate, an active layer formed on the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed on the active layer, an undoped GaN layer formed on the p-type nitride semiconductor layer, an AlGaN layer formed on the undoped GaN layer to form a two-dimensional electron gas (2DEG) layer at a bonding interface between the AlGaN layer and the undoped GaN layer, and an n-side electrode and a p-side electrode respectively formed on the n-type nitride semiconductor layer and the AlGaN layer to be connected to each other. As a hetero-junction structure of GaN/AlGaN is formed on the p-type nitride semiconductor layer, contact resistance between the p-type nitride semiconductor layer and the p-side electrode is enhanced by virtue of tunneling effect through the 2DEG layer.

Abstract: Provided is a nitride semiconductor light emitting device having enhanced output power and resistance to electrostatic discharge. The light emitting device comprises an n-side contact layer formed on a substrate, a current diffusion layer formed on the n-side contact layer, an active layer formed on the current diffusion layer, and a p-type clad layer formed on the active layer. The current diffusion layer is formed by alternately stacking at least one first InAlGaN layer having a higher electron concentration than that of the n-side contact layer and at least one second InAlGaN layer having a lower electron concentration than that of the n-side contact layer.

Abstract: A nitride semiconductor LED improved in lighting efficiency and a fabrication method thereof, in which an n-doped semiconductor layer is formed on a substrate. An active layer is formed on the n-doped semiconductor layer to expose at least a partial area of the n-doped semiconductor layer. A p-doped semiconductor layer is formed on the active layer. A p+-doped semiconductor layer is formed on the p-doped semiconductor layer. An n+-doped semiconductor layer is formed in at least a partial upper region of the p+-doped semiconductor layer via n-dopant ion implantation. The n+-doped semiconductor layer cooperates with an underlying partial region of the p+-doped semiconductor layer to realize a reverse bias tunneling junction. Also, an upper n-doped semiconductor layer is formed on the n+-doped semiconductor layer to realize lateral current spreading. The invention can improve lighting efficiency by using the reverse bias tunneling junction and/or the lateral current spreading.