Abstract: A display device includes: a substrate; a transistor positioned on the substrate; and a light-emitting device electrically connected to the transistor, wherein the substrate includes a first layer, a second layer positioned between the first layer and the transistor, and a third layer positioned between the second layer and the transistor, the first layer and the third layer include organic materials, and the organic material included by the first layer and the organic material included by the third layer have different half-lives for a corona discharge.

Abstract: A display device includes: a substrate; a polycrystalline silicon film on the substrate; and a first buffer film between the substrate and the polycrystalline silicon film and having one surface contacting the polycrystalline silicon film and another surface opposite to the one surface, wherein the one surface of the first buffer film has a first root mean square (RMS) roughness range, and the first RMS roughness range is 1.5 nm or less.

Abstract: A display device includes a base layer including a plurality of pixel regions, which include a first pixel region, a second pixel region, and a non-pixel region, a pixel defining film disposed on the non-pixel region of the base layer and including a pixel opening disposed corresponding to each of the plurality of pixel regions, and a light-emitting element layer. A valley pattern surrounding a portion of each of the plurality of pixel regions is defined in the pixel defining film and includes a first valley pattern and a second valley pattern. An opening portion is defined at which the valley pattern does not surround the pixel regions and includes a first opening portion and a second opening portion. The first opening portion and the second opening portion do not face each other.

Abstract: A display device includes a base substrate including a first substrate and a second substrate sequentially laminated, a lower semiconductor layer disposed on at least one of the first substrate and the second substrate, a buffer layer disposed on the base substrate, an active semiconductor layer disposed on the buffer layer and including a first active layer of a first transistor and a second active layer of a second transistor, a first insulating layer disposed on the active semiconductor layer, and a first conductive layer disposed on the first insulating layer and including a first gate electrode of the first transistor and a second gate electrode of the second transistor, wherein the lower semiconductor layer overlaps the first active layer, and does not overlap the second active layer.

Abstract: A display device includes: a substrate including a display area and a non-display area; a transistor and a light emitting element, which are disposed on the display area; a pad portion disposed in the non-display area, where the pad portion includes a first metal pattern; and a printed circuit board or a data driver, which is connected with the pad portion. The transistor includes a semiconductor layer disposed on the substrate and a source electrode or a drain electrode which is electrically connected with the semiconductor layer. The source electrode or the drain electrode includes a first layer including a first metal, a second layer including a second metal, and a third layer including the first metal, where the first metal pattern includes the first metal, and is connected with the printed circuit board or the data driver.

Abstract: A display device includes a substrate including an opening area, a peripheral area adjacent to the opening area, and a display area adjacent to the peripheral area; a semiconductor layer overlapping the display area, disposed on the substrate, and including a channel; a gate electrode overlapping the channel of the semiconductor layer; an insulating layer disposed on the gate electrode, and including a first inorganic insulating layer and a second inorganic insulating layer disposed on the first inorganic insulating layer; a first electrode disposed on the insulating layer; an emission layer disposed on the first electrode; and a second electrode disposed on the emission layer, wherein the second inorganic insulating layer is not disposed in at least a portion of an open region in which the emission layer and the second electrode are disconnected in the peripheral area.

Abstract: Disclosed is a method for preparing methyl methacrylate (MMA), the method including: (1) separating isobutene containing saturated hydrocarbon (n-butane and iso-butane), via a catalytic distillation process from a stream of C4 hydrocarbons containing butadiene, n-butene, and isobutene; (2) producing methacrolein via a first oxidation reaction of the separated isobutene; (3) producing methacrylic acid via a second oxidation reaction of the produced methacrolein; and (4) esterifying the produced methacrylic acid with methanol. By having a high heat capacity, the amount of nitrogen added is minimized to reduce the size of the reactor and the amount of gas production at a rear end, which has a high economic feasibility due to the effect of reducing investment and investment cost.

Abstract: A display device includes: a substrate including a display area and a peripheral area surrounding an opening; a transistor disposed in the display area; a first electrode electrically connected to the transistor; an auxiliary layer disposed between the transistor and the first electrode and overlapping the first electrode in a plan view; a pixel definition layer overlapping the first electrode and an edge of the auxiliary layer in the plan view; an intermediate layer, an emission layer, and a second electrode disposed on the first electrode; at least one or more dams disposed on the peripheral area; and an encapsulation layer disposed on the light-emitting element. The intermediate layer includes a cutting part disposed between the display area and the opening.

Abstract: A display device is provided. The display device includes a first substrate, a first charge trap layer disposed on the first substrate and including silicon nitride, a semiconductor layer disposed on the first charge trap layer and including a first active layer of a first transistor and a second active layer of a second transistor, and an organic light emitting element electrically connected to the first transistor, wherein a ratio of a content of a Si element to a content of an N element in the first charge trap layer is in a range of 1.6 to 2.5.

Abstract: A display device and a method of manufacturing the same are provided. The display device, comprises a first base substrate, a first barrier layer disposed on the first base substrate, a second base substrate disposed on the first barrier layer, at least one transistor disposed on the second base substrate, and an organic light emitting diode disposed on the at least one transistor, wherein the first barrier layer includes a silicon oxide, and has an adhesion force of 200 gf/inch or more to the second base substrate.

Abstract: A display device includes a substrate including a first area, a second area, and a bending area. A plurality of first wires are positioned in the first area. A plurality of second wires are positioned in the second area. An insulating layer is positioned in the bending area. A plurality of connecting wires are disposed on the insulating layer. Each of the connecting wires is connected with at least one of the first wires and at least one of the second wires. Each of the connecting wires includes a first portion and a second portion alternatingly arranged along an extending direction of the connecting wires. A width of the first portion is wider than a width of the second portion in a direction perpendicular to the extending direction each of the connecting wires.

Abstract: A display device includes a base substrate including a first substrate and a second substrate sequentially laminated, a lower semiconductor layer disposed on at least one of the first substrate and the second substrate, a buffer layer disposed on the base substrate, an active semiconductor layer disposed on the buffer layer and including a first active layer of a first transistor and a second active layer of a second transistor, a first insulating layer disposed on the active semiconductor layer, and a first conductive layer disposed on the first insulating layer and including a first gate electrode of the first transistor and a second gate electrode of the second transistor, wherein the lower semiconductor layer overlaps the first active layer, and does not overlap the second active layer.

Abstract: A thermoelectric sintered body according to an embodiment comprises thermoelectric powder, the thermoelectric powder, arranged in a horizontal direction, comprising: a plurality of first powders in the shape of plate-type flakes; and a plurality of second powders in a shape different from that of the first powders, wherein the second powders comprise 5 volume % or less of the total thermoelectric powder.

Abstract: A display device includes: a substrate; a transistor positioned on the substrate; and a light-emitting device electrically connected to the transistor, wherein the substrate includes a first layer, a second layer positioned between the first layer and the transistor, and a third layer positioned between the second layer and the transistor, the first layer and the third layer include organic materials, and the organic material included by the first layer and the organic material included by the third layer have different half-lives for a corona discharge.

Abstract: A display device includes a substrate including a first area, a second area, and a bending area. A plurality of first wires are positioned in the first area. A plurality of second wires are positioned in the second area. An insulating layer is positioned in the bending area. A plurality of connecting wires are disposed on the insulating layer. Each of the connecting wires is connected with at least one of the first wires and at least one of the second wires. Each of the connecting wires includes a first portion and a second portion alternatingly arranged along an extending direction of the connecting wires. A width of the first portion is wider than a width of the second portion in a direction perpendicular to the extending direction each of the connecting wires.

Abstract: The disclosure relates to a storage device, a controller and a method for operating a controller. The controller described in embodiments of the disclosure may include a word line grouping circuit configured to group a plurality of word lines in a semiconductor memory device into a plurality of word line groups based on program time information on program times of the respective word lines. Also, the controller may include a super page configuration circuit configured to configure a plurality of super pages including some of the word lines, based on word line group information on the word line groups. Embodiments of the disclosure may provide a storage device, a controller and a method for operating a controller, capable of minimizing program performance degradation that may occur due to deviations in program time among word lines.

Abstract: A method for producing a 2-octylglycine ester having optical activity from a racemic 2-octyl-DL-glycine ester and, more particularly, to a method for producing a 2-octyl-L-glycine ester or a 2-octyl-D-glycine ester by using a chiral mandelic acid as an optical resolution agent.

Abstract: A display device includes: a substrate; a polycrystalline silicon film on the substrate; and a first buffer film between the substrate and the polycrystalline silicon film and having one surface contacting the polycrystalline silicon film and another surface opposite to the one surface, wherein the one surface of the first buffer film has a first root mean square (RMS) roughness range, and the first RMS roughness range is 1.5 nm or less.

Abstract: Disclosed is a method for preparing methyl methacrylate (MMA), the method including: (1) separating isobutene containing saturated hydrocarbon (n-butane and iso-butane), via a catalytic distillation process from a stream of C4 hydrocarbons containing butadiene, n-butene, and isobutene; (2) producing methacrolein via a first oxidation reaction of the separated isobutene; (3) producing methacrylic acid via a second oxidation reaction of the produced methacrolein; and (4) esterifying the produced methacrylic acid with methanol. By having a high heat capacity, the amount of nitrogen added is minimized to reduce the size of the reactor and the amount of gas production at a rear end, which has a high economic feasibility due to the effect of reducing investment and investment cost.

Abstract: A thermoelectric sintered body according to an embodiment comprises thermoelectric powder, the thermoelectric powder, arranged in a horizontal direction, comprising: a plurality of first powders in the shape of plate-type flakes; and a plurality of second powders in a shape different from that of the first powders, wherein the second powders comprise 5 volume % or less of the total thermoelectric powder.