Abstract: Embodiments of the present application provides a method for improving the short-circuit capability of an enhancement-mode (E-mode) GaN HEMT and its device structure. This is achieved by depositing metal in the active region between the gate and the source, adjacent to the source region of a conventional E-mode GaN HEMT, the metal is directly connected with the source of the conventional E-mode GaN HEMT. The conventional E-mode GaN HEMT is combined with a gate-source-shorted depletion-mode (D-mode) GaN HEMT to form a complete E-mode GaN HEMT with improved short-circuit capability. By clamping the saturation current of the complete device through the D-mode GaN HEMT, the saturation current density of the E-mode GaN HEMT can be reduced, and the purpose of improving the short-circuit capability is finally realized.

Abstract: The present application relates to an image processing method and system. The method includes: determining an enhanced image of a target object of an input image based on a segmentation algorithm, where the enhanced image of the target object comprises an image in which each pixel classified as the target object is displayed in an enhanced manner; and determining a positioning image of the target object by applying an integral image algorithm to the enhanced image of the target object.

Abstract: Disclosed are a GaN power device and a manufacturing method thereof. The GaN power device includes a substrate, and a buffer layer, a GaN channel layer and a barrier layer sequentially stacked on the substrate from bottom to top. The barrier layer is provided with a p-GaN cap layer and a p-GaN thin layer, and the p-GaN thin layer is configured to cover the surface of the barrier layer and is connected to the p-GaN cap layer; the upper surface of the barrier layer is also provided with an input electrode and an output electrode, and a control electrode is provided on the upper surface of the p-GaN cap layer. The control electrode and the p-GaN thin layer are located between the input electrode and the output electrode.

Abstract: The present application relates to an image processing method and system. The method includes: determining an enhanced image of a target object of an input image based on a segmentation algorithm, where the enhanced image of the target object comprises an image in which each pixel classified as the target object is displayed in an enhanced manner; and determining a positioning image of the target object by applying an integral image algorithm to the enhanced image of the target object.

Abstract: The present application relates to an image processing method and system. The method includes: determining an enhanced image of a target object of an input image based on a segmentation algorithm, where the enhanced image of the target object comprises an image in which each pixel classified as the target object is displayed in an enhanced manner; and determining a positioning image of the target object by applying an integral image algorithm to the enhanced image of the target object.

Abstract: A semiconductor apparatus includes a plurality of semiconductor devices with a single substrate, a plurality of trench regions, each trench region including a trench, wherein the single substrate includes a substrate layer, a first epitaxial layer of a first conductivity type, disposed on the substrate layer, and a second epitaxial layer of a second conductivity type, disposed on the first epitaxial layer, wherein each trench of the plurality of trench regions extends through the second epitaxial layer and into the first epitaxial layer, thereby isolating adjacent semiconductor devices of the plurality of semiconductor devices.

Abstract: A targeting nanoparticle composition and method of treatment for diseases associated with major basement membrane components of blood vessels accessible from blood stream is presented. The composition includes pegylated perfluorocarbon nanoparticles having a targeting ligand attached that targets the basement membrane components, specifically collagen IV. The targeted nanoparticles may contain at least one pharmaceutically active agent capable of treating a glomerular disease such as lupus nephritis.

Abstract: A targeting nanoparticle composition and method of treatment for diseases associated with major basement membrane components of blood vessels accessible from blood stream is presented. The composition includes pegylated perfluorocarbon nanoparticles having a targeting ligand attached that targets the basement membrane components, specifically collagen IV. The targeted nanoparticles may contain at least one pharmaceutically active agent capable of treating a glomerular disease such as lupus nephritis.

Abstract: A semiconductor apparatus includes a plurality of semiconductor devices with a single substrate, a plurality of trench regions, each trench region including a trench, wherein the single substrate includes a substrate layer, a first epitaxial layer of a first conductivity type, disposed on the substrate layer, and a second epitaxial layer of a second conductivity type, disposed on the first epitaxial layer, wherein each trench of the plurality of trench regions extends through the second epitaxial layer and into the first epitaxial layer, thereby isolating adjacent semiconductor devices of the plurality of semiconductor devices.

Abstract: There is provided a ventilation apparatus with counter-rotating impellers driven by long shaft, wherein an electric motor and a gearbox are placed outside the air duct by using a long shaft with an internally disposed slim shaft extending therefrom, and are connected with the first stage impeller and second stage impeller inside the air duct by using the long shaft and slim shaft extending therefrom. In this ventilation apparatus with counter-rotating impellers, the components of the ventilation apparatus are placed inside and outside the air duct respectively by using the transmission shaft, which is convenient for maintenance and operation. By remotely arranging the impellers at an axial distance, the hub of the impellers will no longer be affected by an internally disposed electric motor, so as to reduce the ventilation resistance to ventilation. The impellers can be switched between the single impeller rotation and the counter rotation of two impellers.

Abstract: Techniques are provided for forming a semiconductor device. In an aspect, a semiconductor device is provided that includes a silicon carbide (SiC) structure and a III-nitride structure. The SiC structure includes a drain electrode, a substrate layer that is formed on the drain electrode and includes SiC, and a drift layer formed on the substrate layer. The drift layer includes p-well regions that allow current to flow through a region between the p-well regions. The III-nitride structure includes a set of III-nitride semiconductor layers formed on the SiC structure, a passivation layer formed on the set of III-nitride semiconductor layers, a source electrode electrically coupled to the p-well regions, and gate electrodes electrically isolated from the set of III-nitride semiconductor layers. In an aspect, the SiC structure includes a transition layer that includes connecting regions. In another aspect, the III-nitride structures includes connection electrodes electrically coupled to the connecting regions.

Abstract: The refractive index of a fiber core of a few mode optical fiber is n1. A cladding layer surrounding the fiber core includes: a downward-concave cladding layer surrounding the fiber core, the refractive index thereof is n2; a first upward-convex cladding layer surrounding the downward-concave cladding layer, the refractive index thereof is n3; a second upward-convex cladding layer surrounding the first upward-convex cladding layer, the refractive index thereof is n4; an outer layer surrounding the second upward-convex cladding layer, the refractive index thereof is n5. The refractive indexes of the fiber core, the downward-concave cladding layer, the first upward-convex cladding layer, the second upward-convex cladding layer, the outer layer satisfy: n1>n3>n4>n5>n2. The fiber is a non-single mode in a direct waveguide state, and equivalent single-mode transmission can be achieved when the optical fiber is bent at a specific bending radius.

Abstract: The present application provides a transistor and a manufacturing method thereof, and can at least partially solve the problem of degraded characteristics and deteriorated reliability with use of existing transistors with a P-cap layer. The transistor includes: a channel layer and a barrier layer stacked on top of each other; and a source, a drain, and a gate spaced apart from one another on a side of the barrier layer distal to the channel layer. The gate is between the source and the drain, a P-cap layer is provided between the barrier layer and the gate, and a Schottky contact is formed between the P-cap layer and the gate. Two side edge regions of the P-cap layer respectively close to the source and the drain are two electric field modulation regions spaced apart from each other and capable of inducing positive charges under a positive gate-source voltage.

Abstract: The refractive index of a fiber core of a few mode optical fiber is n1. A cladding layer surrounding the fiber core includes: a downward-concave cladding layer surrounding the fiber core, the refractive index thereof is n2; a first upward-convex cladding layer surrounding the downward-concave cladding layer, the refractive index thereof is n3; a second upward-convex cladding layer surrounding the first upward-convex cladding layer, the refractive index thereof is n4; an outer layer surrounding the second upward-convex cladding layer, the refractive index thereof is n5. The refractive indexes of the fiber core, the downward-concave cladding layer, the first upward-convex cladding layer, the second upward-convex cladding layer, the outer layer satisfy: n1>n3>n4>n5>n2. The fiber is a non-single mode in a direct waveguide state, and equivalent single-mode transmission can be achieved when the optical fiber is bent at a specific bending radius.

Abstract: Techniques are provided for forming a semiconductor device. In an aspect, a semiconductor device is provided that includes a silicon carbide (SiC) structure and a III-nitride structure. The SiC structure includes a drain electrode, a substrate layer that is formed on the drain electrode and includes SiC, and a drift layer formed on the substrate layer. The drift layer includes p-well regions that allow current to flow through a region between the p-well regions. The III-nitride structure includes a set of III-nitride semiconductor layers formed on the SiC structure, a passivation layer formed on the set of III-nitride semiconductor layers, a source electrode electrically coupled to the p-well regions, and gate electrodes electrically isolated from the set of III-nitride semiconductor layers. In an aspect, the SiC structure includes a transition layer that includes connecting regions. In another aspect, the III-nitride structures includes connection electrodes electrically coupled to the connecting regions.

Abstract: The present application discloses a server load balancing method and apparatus, and a server device. The method includes: classifying, according to link quality of back-end servers in a server cluster, the back-end servers into multiple server groups; setting priorities of the multiple server groups according to link quality of the server groups; selecting, when an access request sent by a first terminal is received, a server group from the multiple server groups as a target server group based on the priorities; selecting a target back-end server from the target server group; and establishing communication between the target back-end server and the first terminal.

Abstract: A magnetic transmission apparatus is disclosed, wherein the magnetic transmission apparatus includes a still part (4), a first rotating shaft (81), a second rotating shaft (82), a first rotating part (1), a second rotating part (2), and a third rotating part (3); the first rotating part (1) is rigidly connected with the first rotating shaft (81); the second rotating part (2), the third rotating part (3) are fixed on the second rotating shaft (82); the first rotating part (1), the second rotating part (2), and the third rotating part (3) are successively distributed along an axial direction; the still part (4) includes a magnetic regulation seat (41) and a magnetic regulation ring (42); the second rotating part (2) is located inside the magnetic regulation ring (42); the first rotating part (1) includes a first iron core (11), a first permanent magnet (12), and a first support part (811); the second rotating part (2) includes a second iron core (21), and a second permanent magnet (22); the third rotating part

Abstract: There is provided a ventilation apparatus with counter-rotating impellers driven by long shaft, wherein an electric motor and a gearbox are placed outside the air duct by using a long shaft with an internally disposed slim shaft extending therefrom, and are connected with the first stage impeller and second stage impeller inside the air duct by using the long shaft and slim shaft extending therefrom. In this ventilation apparatus with counter-rotating impellers, the components of the ventilation apparatus are placed inside and outside the air duct respectively by using the transmission shaft, which is convenient for maintenance and operation. By remotely arranging the impellers at an axial distance, the hub of the impellers will no longer be affected by an internally disposed electric motor, so as to reduce the ventilation resistance to ventilation. The impellers can be switched between the single impeller rotation and the counter rotation of two impellers.

Abstract: Provided is a flywheel energy storage device including a radial magnetic gear, the radial magnetic gear includes an inner rotor, an outer rotor and N1 first magnetic pole adjustment sheets embedded in a first magnetic pole adjustment sheet base; a disc-type magnetic gear electric motor includes a first stator disc, a first rotor disc, a second stator disc, a second rotor disc and a third rotor disc, the first stator disc with the first rotor disc form a first disc-type electric motor, the second stator disc with the second rotor disc form a second disc-type electric motor, and a disc-type magnetic gear is formed by the first rotor disc, the second rotor disc and the third rotor disc, and the first disc-type electric motor, the second disc-type electric motor and the disc-type magnetic gear are couple with one another to form the disc-type magnetic gear electric motor.

Abstract: Provided is a flywheel energy storage device including a radial magnetic gear, the radial magnetic gear includes an inner rotor, an outer rotor and N1 first magnetic pole adjustment sheets embedded in a first magnetic pole adjustment sheet base; a disc-type magnetic gear electric motor includes a first stator disc, a first rotor disc, a second stator disc, a second rotor disc and a third rotor disc, the first stator disc with the first rotor disc form a first disc-type electric motor, the second stator disc with the second rotor disc form a second disc-type electric motor, and a disc-type magnetic gear is formed by the first rotor disc, the second rotor disc and the third rotor disc, and the first disc-type electric motor, the second disc-type electric motor and the disc-type magnetic gear are couple with one another to form the disc-type magnetic gear electric motor.