Abstract: A method for fabricating micro-cell structures is provided and has providing a liquid crystal mixture; performing a heating step on the liquid crystal mixture at a temperature ranging from 45° C. to 150° C., performing a heat induced phase separation step on the liquid crystal mixture at a thermal phase separation temperature for a thermal phase separation titre such that the liquid crystal mixture forms liquid crystal particles and a network light-curing adhesive, wherein the thermal phase separation temperature and the thermal phase separation time are determined by a changing rate of a bright area ratio of the liquid crystal mixture; and performing a photo-curing step on the liquid crystal mixture by emitting an ultraviolet light so that a plurality of micro-cell structures are formed. The micro-cell structures with different transparency are fabricated based on different values of the thermal phase separation temperature and the thermal phase separation time.

Abstract: There is provided a ventilation apparatus with counter-rotating impellers driven by long shaft, wherein an electric motor and a gearbox are placed outside the air duct by using a long shaft with an internally disposed slim shaft extending therefrom, and are connected with the first stage impeller and second stage impeller inside the air duct by using the long shaft and slim shaft extending therefrom. In this ventilation apparatus with counter-rotating impellers, the components of the ventilation apparatus are placed inside and outside the air duct respectively by using the transmission shaft, which is convenient for maintenance and operation. By remotely arranging the impellers at an axial distance, the hub of the impellers will no longer be affected by an internally disposed electric motor, so as to reduce the ventilation resistance to ventilation. The impellers can be switched between the single impeller rotation and the counter rotation of two impellers.

Abstract: Techniques are provided for forming a semiconductor device. In an aspect, a semiconductor device is provided that includes a silicon carbide (SiC) structure and a III-nitride structure. The SiC structure includes a drain electrode, a substrate layer that is formed on the drain electrode and includes SiC, and a drift layer formed on the substrate layer. The drift layer includes p-well regions that allow current to flow through a region between the p-well regions. The III-nitride structure includes a set of III-nitride semiconductor layers formed on the SiC structure, a passivation layer formed on the set of III-nitride semiconductor layers, a source electrode electrically coupled to the p-well regions, and gate electrodes electrically isolated from the set of III-nitride semiconductor layers. In an aspect, the SiC structure includes a transition layer that includes connecting regions. In another aspect, the III-nitride structures includes connection electrodes electrically coupled to the connecting regions.

Abstract: A photodetector is provided. The photodetector is an avalanche photodiode of indium aluminum arsenide (InAlAs). An epitaxial-layers structure with n-side down is used. The strongest electric field of a multiplication layer (M-layer) is coated in inner bottom layers to avoid surface breakdown. An intrinsic layer is thickened; only one absorption layer is used; and a DBR layer is added below an n-type ohmic contact layer. A graded bandgap layer is etched to form a single mesa shape. Through the single mesa shape, all layers are far below breakdown except the M-layer has a particularly high electric field for restraining the electric field. Thus, the present invention changes holes into electrons through p-type-doping the absorption layer; because electrons run fast, carriers is made run fast; and junction capacitance is reduced with surface area increased by depletion layer thickened. Consequently, fast response speed is obtained while sensitivity is effectively improved.

Abstract: A method for fabricating micro-cell structures is provided and has providing a liquid crystal mixture; performing a heating step on the liquid crystal mixture at a temperature ranging from 45° C. to 150° C., performing a heat induced phase separation step on the liquid crystal mixture at a thermal phase separation temperature for a thermal phase separation titre such that the liquid crystal mixture forms liquid crystal particles and a network light-curing adhesive, wherein the thermal phase separation temperature and the thermal phase separation time are determined by a changing rate of a bright area ratio of the liquid crystal mixture; and performing a photo-curing step on the liquid crystal mixture by emitting an ultraviolet light so that a plurality of micro-cell structures are formed. The micro-cell structures with different transparency are fabricated based on different values of the thermal phase separation temperature and the thermal phase separation time.

Abstract: The refractive index of a fiber core of a few mode optical fiber is n1. A cladding layer surrounding the fiber core includes: a downward-concave cladding layer surrounding the fiber core, the refractive index thereof is n2; a first upward-convex cladding layer surrounding the downward-concave cladding layer, the refractive index thereof is n3; a second upward-convex cladding layer surrounding the first upward-convex cladding layer, the refractive index thereof is n4; an outer layer surrounding the second upward-convex cladding layer, the refractive index thereof is n5. The refractive indexes of the fiber core, the downward-concave cladding layer, the first upward-convex cladding layer, the second upward-convex cladding layer, the outer layer satisfy: n1>n3>n4>n5>n2. The fiber is a non-single mode in a direct waveguide state, and equivalent single-mode transmission can be achieved when the optical fiber is bent at a specific bending radius.

Abstract: The present application provides a transistor and a manufacturing method thereof, and can at least partially solve the problem of degraded characteristics and deteriorated reliability with use of existing transistors with a P-cap layer. The transistor includes: a channel layer and a barrier layer stacked on top of each other; and a source, a drain, and a gate spaced apart from one another on a side of the barrier layer distal to the channel layer. The gate is between the source and the drain, a P-cap layer is provided between the barrier layer and the gate, and a Schottky contact is formed between the P-cap layer and the gate. Two side edge regions of the P-cap layer respectively close to the source and the drain are two electric field modulation regions spaced apart from each other and capable of inducing positive charges under a positive gate-source voltage.

Abstract: A method includes receiving image data associated with an image of a roadway including a crosswalk, generating a plurality of different characteristics of the image based on the image data, determining a position of the crosswalk on the roadway based on the plurality of different characteristics, the position including a first boundary and a second boundary of the crosswalk in the roadway, and providing map data associated with a map of the roadway, the map data including the position of the crosswalk on the roadway in the map. The plurality of different characteristics include a classification of one or more elements of the image, a segmentation of the one or more elements of the image, and one or more angles of the one or more elements of the image with respect to a line in the roadway.

Abstract: A type-II hybrid absorber photodetector (PD) is provided with ultrafast speed and high-power performance at terahertz (THz) regime. Through narrowed bandgap and enhanced absorption process at a type-II interface between absorption layers of gallium arsenic antimonide (GaAs0.5Sb0.5) and indium gallium arsenide (In0.53Ga0.47As), the incorporation of the type-II P+-GaAs0.5Sb0.5/i-In0.53Ga0.47As hybrid absorber in an indium phosphide (InP) UTC-PD obtains improvement in responsivity. Current blocking effect is minimized owing to the high-excess energy of photo-generated electrons injected from the GaAs0.5Sb0.5 layer to an InP-based collector layer. The flip-chip bonding packaged device shows a moderate responsivity along with a record wide optical-to-electrical bandwidth at 0.33 THz, among all the reported for long-wavelength ultrafast PDs. A saturation current exceeding 13 mA and a continuous-wave output power of ?3 decibel-milliwatts are demonstrated at an operating frequency of 0.

Abstract: A computer system including one or more processors programmed or configured to receive image data associated with an image of one or more roads, where the one or more roads comprise one or more lanes, determine a lane classification of the one or more lanes based on the image data associated with the image of the one or more roads, and provide lane classification data associated with the lane classification of the one or more lanes.

Abstract: The refractive index of a fiber core of a few mode optical fiber is n1. A cladding layer surrounding the fiber core includes: a downward-concave cladding layer surrounding the fiber core, the refractive index thereof is n2; a first upward-convex cladding layer surrounding the downward-concave cladding layer, the refractive index thereof is n3; a second upward-convex cladding layer surrounding the first upward-convex cladding layer, the refractive index thereof is n4; an outer layer surrounding the second upward-convex cladding layer, the refractive index thereof is n5. The refractive indexes of the fiber core, the downward-concave cladding layer, the first upward-convex cladding layer, the second upward-convex cladding layer, the outer layer satisfy: n1>n3>n4>n5>n2. The fiber is a non-single mode in a direct waveguide state, and equivalent single-mode transmission can be achieved when the optical fiber is bent at a specific bending radius.

Abstract: An example circuit includes: one or more power rails and a tap cell structure. The tap cell structure includes one or more decoupling capacitor cells and one or more tap cells. The one or more tap cells are electrically coupled to the one or more power rails. The one or more decoupling capacitor cells are disposed adjacent to the tap cells and electrically coupled to the one or more power rails.

Abstract: Techniques are provided for forming a semiconductor device. In an aspect, a semiconductor device is provided that includes a silicon carbide (SiC) structure and a III-nitride structure. The SiC structure includes a drain electrode, a substrate layer that is formed on the drain electrode and includes SiC, and a drift layer formed on the substrate layer. The drift layer includes p-well regions that allow current to flow through a region between the p-well regions. The III-nitride structure includes a set of III-nitride semiconductor layers formed on the SiC structure, a passivation layer formed on the set of III-nitride semiconductor layers, a source electrode electrically coupled to the p-well regions, and gate electrodes electrically isolated from the set of III-nitride semiconductor layers. In an aspect, the SiC structure includes a transition layer that includes connecting regions. In another aspect, the III-nitride structures includes connection electrodes electrically coupled to the connecting regions.

Abstract: A method for synchronous display of operating information includes the steps of: receiving a request from a first device for access to a file stored in a server; providing the file to the first device and a second devices, contents of the file being displayed on each of the first and second devices in a form of a web page using a respective web browser launched thereby; receiving, from the first device, operating information that is associated with an input operation performed upon the web page of the first device; and relaying the operating information to the second device. The operating information is used to display an indicator associated therewith on the web page of the second device.

Abstract: The present application discloses a server load balancing method and apparatus, and a server device. The method includes: classifying, according to link quality of back-end servers in a server cluster, the back-end servers into multiple server groups; setting priorities of the multiple server groups according to link quality of the server groups; selecting, when an access request sent by a first terminal is received, a server group from the multiple server groups as a target server group based on the priorities; selecting a target back-end server from the target server group; and establishing communication between the target back-end server and the first terminal.

Abstract: A magnetic transmission apparatus is disclosed, wherein the magnetic transmission apparatus includes a still part (4), a first rotating shaft (81), a second rotating shaft (82), a first rotating part (1), a second rotating part (2), and a third rotating part (3); the first rotating part (1) is rigidly connected with the first rotating shaft (81); the second rotating part (2), the third rotating part (3) are fixed on the second rotating shaft (82); the first rotating part (1), the second rotating part (2), and the third rotating part (3) are successively distributed along an axial direction; the still part (4) includes a magnetic regulation seat (41) and a magnetic regulation ring (42); the second rotating part (2) is located inside the magnetic regulation ring (42); the first rotating part (1) includes a first iron core (11), a first permanent magnet (12), and a first support part (811); the second rotating part (2) includes a second iron core (21), and a second permanent magnet (22); the third rotating part

Abstract: A method for fabricating a substrate structure is provided, which includes the steps of: disposing at least a strengthening member on a carrier; sequentially forming a first circuit layer and a dielectric layer on the carrier, wherein the strengthening member is embedded in the dielectric layer; forming a second circuit layer on the dielectric layer; removing the carrier; and forming an insulating layer on the first circuit layer and the second circuit layer. The strengthening member facilitates to reduce thermal warping of the substrate structure.

Abstract: An electronic device is provided, including a substrate, a first circuit portion and a second circuit portion formed on the substrate, and an electronic component having a first portion disposed on the first circuit portion and a second portion disposed on the second circuit portion. The first circuit portion differs in circuit specification from the second circuit portion. Therefore, the present disclosure eliminates the need to fabricate all circuit layers under fine trace specification, thereby effectively reducing the cost.

Abstract: There is provided a ventilation apparatus with counter-rotating impellers driven by long shaft, wherein an electric motor and a gearbox are placed outside the air duct by using a long shaft with an internally disposed slim shaft extending therefrom, and are connected with the first stage impeller and second stage impeller inside the air duct by using the long shaft and slim shaft extending therefrom. In this ventilation apparatus with counter-rotating impellers, the components of the ventilation apparatus are placed inside and outside the air duct respectively by using the transmission shaft, which is convenient for maintenance and operation. By remotely arranging the impellers at an axial distance, the hub of the impellers will no longer be affected by an internally disposed electric motor, so as to reduce the ventilation resistance to ventilation. The impellers can be switched between the single impeller rotation and the counter rotation of two impellers.

Abstract: A method for fabricating a substrate structure is provided, which includes the steps of: disposing at least a strengthening member on a carrier; sequentially forming a first circuit layer and a dielectric layer on the carrier, wherein the strengthening member is embedded in the dielectric layer; forming a second circuit layer on the dielectric layer; removing the carrier; and forming an insulating layer on the first circuit layer and the second circuit layer. The strengthening member facilitates to reduce thermal warping of the substrate structure.