Abstract: A method for fabricating a semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a contact hole in the first IMD layer; forming a bottom electrode layer in the contact hole; forming a magnetic tunneling junction (MTJ) stack on the bottom electrode layer; and removing the MTJ stack and the bottom electrode layer to form a MTJ on a bottom electrode. Preferably, the bottom electrode protrudes above a top surface of the first IMD layer.

Abstract: A package structure is provided. The package structure includes a lead frame, a first connecting piece, a light-emitting diode, an engaging protrusion, and a fluorescent encapsulant. The lead frame has an upper surface, a lower surface, and a side surface between the upper surface and the lower surface. The first connecting piece is disposed at the center of the upper surface. The light-emitting diode is disposed on the first connecting piece. The engaging protrusion is disposed on the periphery of the upper surface. The fluorescent encapsulant is disposed on the upper surface and covers the light-emitting diode and the engaging protrusion.

Abstract: An organic light-emitting diode display device includes a first light-emitting layer, a first anode, a first reflective pattern, and a dielectric material. The first light-emitting layer, the first anode, and the first reflective pattern are located in a first sub-pixel region. The first anode is disposed under the first light-emitting layer in a vertical direction, and the first reflective pattern is disposed under the first anode in the vertical direction. The dielectric material is partly disposed between the first anode and the first reflective pattern, and the first reflective pattern is electrically connected with the first anode.

Abstract: A method for fabricating semiconductor device includes the steps of first forming a gate structure on a substrate, forming a source/drain region adjacent to two sides of the gate structure, forming an epitaxial layer on the source/drain region, forming an interlayer dielectric (ILD) layer on the gate structure, forming a contact hole in the ILD layer to expose the epitaxial layer, forming a low stress metal layer in the contact hole, forming a barrier layer on the low stress metal layer, and forming an anneal process to form a first silicide layer and a second silicide layer.

Abstract: A bone tissue regeneration product, a method for preparing the bone tissue regeneration product and, and a method for repairing a bone defect. The new use of IGSF10 of the present disclosure can reduce the effective concentration of BMP without obvious adverse reactions, thereby exploring a method to promote bone tissue regeneration and providing new ideas for the treatment of bone defects. The present disclosure is capable of promoting non-bone related cells to produce bones; the method of the present disclosure is also capable of inhibiting the bone loss in inflammatory environments.

Abstract: A multi-scale prediction method for an ablation behavior of a hypersonic aircraft heat resistant structure, includes inputting hypersonic inflow far field boundary conditions into a macro CFD solver to perform numerical simulation of the external flow field of a hypersonic aircraft; extracting the mass fraction and temperature distribution of wall surface components; obtaining an msd.txt file and an atomic path file recording the mean square displacement data through a micro RMD solver; obtaining the ratio of mass loss rate to material density, namely, the ablation retreating rate using the MSD method and Fick's law; inputting it into a CFD solver for performing grid reconstruction and transient calculation to obtain the transient variation in the external flow field of a hypersonic aircraft along the ablation retreating of the aircraft wall surface.

Abstract: An etch bias direction is determined based on a curvature of a contour in a substrate pattern. The etch bias direction is configured to be used to enhance an accuracy of a semiconductor patterning process relative to prior patterning processes. In some embodiments, a representation of the substrate pattern is received, which includes the contour in the substrate pattern. The curvature of the contour of the substrate pattern is determined, and an etch bias direction is determined based on the curvature by considering curvatures of adjacent contour portions. A simulation model is used to determine an etch effect based on the etch bias direction for an etching process on the substrate pattern.

Abstract: The present disclosure relates to a standby power supply, including: a first sub power supply configured to provide alternating current electrical energy, where the first sub power supply is connected to an input terminal of an alternating current/direct current (AC/DC) converter; the AC/DC converter configured to convert the alternating current electrical energy into direct current electrical energy, where an output terminal of the AC/DC converter is connected to an output terminal of the standby power supply; and second sub power supplies configured to provide the direct current electrical energy, where the second sub power supplies are connected to the output terminal of the standby power supply. Through the present disclosure, a standby power supply solution having high reliability and capable of meeting power consuming requirements of a load with a great change in power demand such as a wind generator may be provided.

Abstract: Various embodiments disclose a 3D memory device, including a substrate; a plurality of conductor layers disposed on the substrate; a plurality of NAND strings disposed on the substrate; and a plurality of slit structures disposed on the substrate. The plurality of NAND strings can be arranged perpendicular to the substrate and in a hexagonal lattice orientation including a plurality of hexagons, and each hexagon including three pairs of sides with a first pair perpendicular to a first direction and parallel to a second direction. The second direction is perpendicular to the first direction. The plurality of slit structures can extend in the first direction.

Abstract: Disclosed is a battery system, including several parallel-connected battery clusters, each battery cluster being connected to a power conversion system via a battery bus, and any one of battery clusters includes several series-connected battery packs; pack equalizers, corresponding to the battery packs on a one-to-one basis, a first end of the pack equalizer being connected to two ends of a corresponding battery pack, and a second end thereof being connected to a power source; and a cluster equalizer, a first end of the cluster equalizer being connected in series to the battery packs, and a second end thereof being connected to the power source. According to the battery system, the pack equalizer is used between the battery packs to regulate the equalization of the battery packs in each cluster; in addition, each battery cluster is connected to the cluster equalizer to realize equalization regulation of the battery cluster.

Abstract: Disclosed is a battery system, including several parallel-connected battery clusters, each battery cluster being connected to a power conversion system via a battery bus, and any one of battery clusters includes several series-connected battery packs; pack equalizers, corresponding to the battery packs on a one-to-one basis, a first end of the pack equalizer being connected to two ends of a corresponding battery pack, and a second end thereof being connected to a power source; and a cluster equalizer, a first end of the cluster equalizer being connected in series to the battery packs, and a second end thereof being connected to the power source. According to the battery system, the pack equalizer is used between the battery packs to regulate the equalization of the battery packs in each cluster; in addition, each battery cluster is connected to the cluster equalizer to realize equalization regulation of the battery cluster.

Abstract: Systems and methods for preventing the fraudulent sending of data from a computer application to a malicious third party are disclosed. In one embodiment, a method for preventing a computer application from sending data to an unauthorized website may include: (1) receiving, at a computer application executed by an electronic device and from a first website, an identification of a second website for receiving data from the computer application; (2) providing, by the computer application and to a certificate authority, the identification of the second website, wherein the certificate authority validates that the second website is on a list of allowed websites for the first website; (3) receiving, by the computer application and from the certificate authority, validation; and (4) communicating, by the computer application, the data to the second website.

Abstract: Methods of analyzing cells, including interactions among different populations of cells. Methods include cell-containing liquid droplets with oligonucleotide-containing liquid droplets, hybridizing oligonucleotides to target nucleic acids from cells, extending the hybridized oligonucleotides on the target nucleic acids into cell identifier sequences on the target nucleic acids, and thereby identifying the type of cells initially present. The methods can be implemented in a high-throughput manner in a microfluidic system.

Abstract: The present disclosure relates to the field of medicines, in particular to the use of IGSF10 in the preparation of a bone tissue regeneration product, especially the use of IGSF10 in combination with BMP in the preparation of a product for promoting bone tissue regeneration. The product includes a periodontal bone defect repair product, a jaw bone defect repair product and/or a skull defect repair product. The new use of IGSF10 of the present disclosure can reduce the effective concentration of BMP without obvious adverse reactions, thereby exploring a method to promote bone tissue regeneration and providing new ideas for the treatment of bone defects.

Abstract: Methods and structures of a three-dimensional memory device are disclosed. In an example, the memory device includes a substrate having one or more first recesses in a first region and one or more second recesses in a second region. A liner layer is disposed over the sidewalls and bottom of the one or more first recesses in the first region and an epitaxially-grown material is formed in the one or more second recesses in the second region. One or more NAND strings are formed over the epitaxially-grown material disposed in the one or more second recesses, and one or more vertical structures are formed over the one or more first recesses in the first region.

Abstract: A method for forming a three-dimensional memory device includes disposing a material layer over a substrate, forming a plurality of channel-forming holes and a plurality of sacrificial holes around the plurality of channel-forming holes in an array-forming region of the material layer, and forming a plurality of semiconductor channels based on the channel-forming holes and at least one gate line slit (GLS) based on at least one of the plurality of sacrificial holes. A location of the at least one GLS overlaps with the at least one of the plurality of sacrificial holes.

Abstract: Methods and structures of a three-dimensional memory device are disclosed. In an example, the memory device includes a substrate having one or more first recesses in a first region and one or more second recesses in a second region. A liner layer is disposed over the sidewalls and bottom of the one or more first recesses in the first region and an epitaxially-grown material is formed in the one or more second recesses in the second region. One or more NAND strings are formed over the epitaxially-grown material disposed in the one or more second recesses, and one or more vertical structures are formed over the one or more first recesses in the first region.

Abstract: Methods and structures of a three-dimensional memory device are disclosed. In an example, the memory device includes a substrate having one or more first recesses in a first region and one or more second recesses in a second region. A liner layer is disposed over the sidewalls and bottom of the one or more first recesses in the first region and an epitaxially-grown material is formed in the one or more second recesses in the second region. One or more NAND strings are formed over the epitaxially-grown material disposed in the one or more second recesses, and one or more vertical structures are formed over the one or more first recesses in the first region.

Abstract: Various embodiments disclose a 3D memory device, including a substrate; a plurality of conductor layers disposed on the substrate; a plurality of NAND strings disposed on the substrate; and a plurality of slit structures disposed on the substrate. The plurality of NAND strings can be arranged perpendicular to the substrate and in a hexagonal lattice orientation including a plurality of hexagons, and each hexagon including three pairs of sides with a first pair perpendicular to a first direction and parallel to a second direction. The second direction is perpendicular to the first direction. The plurality of slit structures can extend in the first direction.

Abstract: Systems and methods for preventing the fraudulent sending of data from a computer application to a malicious third party are disclosed. In one embodiment, a method for preventing a computer application from sending data to an unauthorized website may include: (1) receiving, at a computer application executed by an electronic device and from a first website, an identification of a second website for receiving data from the computer application; (2) providing, by the computer application and to a certificate authority, the identification of the second website, wherein the certificate authority validates that the second website is on a list of allowed websites for the first website; (3) receiving, by the computer application and from the certificate authority, validation; and (4) communicating, by the computer application, the data to the second website.