Patents by Inventor Jin-Wook Lee

Jin-Wook Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090083767
    Abstract: A network device driver includes a fetching/hooking module to fetch/hook hardware data and/or a hardware event of the communication terminal; a packet assembly module to packetize the hardware data and/or the hardware event; a packet release module to recover the packetized hardware data and/or the hardware event, which are/is received from another terminal connected with the communication terminal via a wired/wireless communication network; and a transmission module to receive/transmit the packetized hardware data and/or the hardware event from/to another communication terminal.
    Type: Application
    Filed: February 6, 2008
    Publication date: March 26, 2009
    Inventors: Jin Wook LEE, Hun Lim, Won Keun Kong, Gene Moo Lee
  • Publication number: 20090073393
    Abstract: A projector control system includes a location measurement unit which measures location information of a projector; a projection information unit which generates projection information using the location information; a communication unit which transmits the projection information to the projector; and an image control unit which controls the projector to project an image according to the projection information.
    Type: Application
    Filed: March 26, 2008
    Publication date: March 19, 2009
    Inventors: Jin Wook Lee, Hun Lim, Gene Moo Lee, Won Keun Kong
  • Publication number: 20090068823
    Abstract: In plasma ion doping operations, a wafer is positioned on a susceptor within a reaction chamber and an ion doping source gas is plasmalyzed in an upper part of the reaction chamber above a major surface of the wafer while supplying a control gas into the reaction chamber in a lower part of the reaction chamber opposite the major surface of the wafer to thereby dope ions into the major surface of the wafer. The ion doping source gas may comprise at least one halide gas, and the control gas may comprise at least one depositing gas, such as a silane gas. In further embodiments, a diluent gas, such as an inert gas, may be supplied to the reaction chamber while supplying the ion doping source gas and the control gas. Related plasma ion doping apparatus are described.
    Type: Application
    Filed: June 25, 2008
    Publication date: March 12, 2009
    Inventors: Soo Jin Hong, Si-Young Choi, Tai-Su Park, Jin-Wook Lee, Jong-Hoon Kang, Mi-Jin Kim
  • Patent number: 7496468
    Abstract: An apparatus and method of determining a number of data transmissions in a sensor network are provided. More particularly, an apparatus for determining a number of data transmissions preferably includes an interest zone detector for detecting an interest zone based on a user query, a zone determination unit for determining whether the interest zone is overlapped with a sensing zone, a zone calculator for calculating an overlap amount when the interest zone is overlapped with the sensing zone, and a transmission number determination unit for determining a number of data transmissions according to the overlap amount.
    Type: Grant
    Filed: June 29, 2007
    Date of Patent: February 24, 2009
    Assignees: Samsung Electronics Co., Ltd., Korea University Industrial & Academic Collaboration Foundation
    Inventors: Jin Wook Lee, Hun Lim, Sun Shin An, Won Keun Kong, Su Myeon Kim, Kyung Soo Lim, Sang Bin Lee
  • Publication number: 20090003064
    Abstract: A flash memory device and a method of programming the same include a memory cell array, a pass/fail check circuit and a control logic circuit. The memory cell array includes multiple memory cells arranged in rows and columns. The pass/fail check circuit verifies whether data bits selected by a column address during a column scan operation have program data values. The control logic circuit detects fail data bits from the selected data bits and stores the column address in response to the verification result of the pass/fail check circuit. The control logic circuit also compares a number of the fail data bits with a reference value and controls generation of the column address according to the comparison result.
    Type: Application
    Filed: May 23, 2008
    Publication date: January 1, 2009
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kyong-Ae KIM, Jin-Wook LEE, Yun-Ho CHOI
  • Publication number: 20080313900
    Abstract: A method of manufacturing an inkjet print head simplifies a manufacturing process and uniformly forms an ink channel and includes forming a chamber layer using a low-speed optical hardening material on a substrate, hardening regions of the chamber layer for the wall of an ink channel by selectively exposing the chamber layer to light, forming a nozzle layer using a high-speed optical hardening material, having a higher optical reaction speed than that of the low-speed optical hardening material, on the chamber layer, hardening regions of the nozzle layer other than nozzles by selectively exposing the nozzle layer to light, and forming the ink channel and the nozzles by developing the chamber layer and the non-exposed regions of the nozzle layer.
    Type: Application
    Filed: February 19, 2008
    Publication date: December 25, 2008
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Myong Jong KWON, Sung Joon PARK, Jin Wook LEE
  • Patent number: 7467251
    Abstract: A flash memory data storage apparatus comprises a flash memory and a flash interface. The flash memory transceives data through a flash bus group. The flash interface includes first through n'th flash input buffers that transfer data to a host bus group in stages in response to first through n'th transfer clock control signals. An i'th flash input buffer provides data through i'th input-buffer bus groups in number of at least Ni. A bus width of each of the i'th input-buffer bus groups is wider than a bus width of each of an (i?l)'th input-buffer bus groups. A period of an i'th transfer clock control signal is longer than a period of an (i?1)'th transfer clock control signal. The Ni is obtained by dividing a bus width of the flash bus group by dividing the bus width of the flash bus group by the bus width of the each of the i'th input-buffer bus groups.
    Type: Grant
    Filed: September 12, 2005
    Date of Patent: December 16, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Min-Gun Park, Jin-Wook Lee
  • Publication number: 20080283494
    Abstract: A method of manufacturing a thermal inkjet printhead. The method includes forming on a substrate a chamber layer having an ink chamber, forming a sacrificial layer on the chamber layer wherein the sacrificial layer fills the ink chamber, and planarizing a top surface of the sacrificial layer and of the chamber layer using a primary Chemical Mechanical Polishing (CMP) process until the sacrificial layer and the chamber layer attain a desired height, wherein a slurry is used in the primary CMP process that includes polishing particles having an average particle size of 500 nm˜2 ?m.
    Type: Application
    Filed: October 18, 2007
    Publication date: November 20, 2008
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Il-woo Kim, Jin-wook Lee, Byung-ha Park, Myong-jong Kwon, Kyong-il Kim, Hye-young Min
  • Patent number: 7443728
    Abstract: Disclosed is a NAND flash memory device comprising a memory cell array connected to a page buffer via a plurality of bitlines. The page buffer stores input data to be programmed in the memory cell array. The memory cell array is programmed by establishing bitline voltages for the plurality of bitlines according to the input data and then applying a wordline voltage to the memory cell array. The bitline voltages are established by first precharging the bitlines to a power supply voltage and then selectively discharging the bitlines according to the input data. The bitlines are discharged sequentially, i.e., some of the bitlines are discharged before others.
    Type: Grant
    Filed: October 4, 2005
    Date of Patent: October 28, 2008
    Assignee: Samsung Electronic Co., Ltd.
    Inventors: Jin-Wook Lee, Pyung-Moon Zhang
  • Publication number: 20080231665
    Abstract: The inkjet printhead includes substrate having an ink feed hole formed to supply ink, a chamber layer stacked on the substrate, and including a plurality of main ink chambers formed therein with the ink feed hole therebetween and a plurality of compensation ink chambers formed therein between the main ink chambers that face each other; and a nozzle layer stacked on the chamber layer, and including a plurality of main nozzles corresponding to the main ink chambers and a plurality of compensation nozzles corresponding to the compensation ink chambers.
    Type: Application
    Filed: September 24, 2007
    Publication date: September 25, 2008
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Moon-chul Lee, Myong-jong Kwon, Yong-seop Yoon, Jin-wook Lee, Yong-won Jeong, Donk-sik Shim
  • Publication number: 20080230513
    Abstract: A method for manufacturing an ink-jet print head including: preparing a single crystal silicon wafer having a (110) crystal plane orientation, as a substrate; forming a heater to heat an ink, on a front surface of a silicon substrate; forming a trench inward of the heater; forming a flow channel layer defining an ink passage, on the front surface of the substrate; forming a nozzle layer having a nozzle on the flow channel layer; and forming an ink supply channel from a rear surface of the substrate to the trench by anisotropic wet etching.
    Type: Application
    Filed: December 13, 2007
    Publication date: September 25, 2008
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Jin Wook LEE, Kyong II Kim, Sung Joon Park, JL Woo Kim
  • Publication number: 20080191868
    Abstract: A data aggregation method and data aggregation apparatus are provided. More particularly the data aggregation method includes: generating a plurality of data aggregation trees according to connection relationships between clusters that constitute a sensor network using a geographical code (GGC), selecting a single activation zone for each of the clusters which configures each of the plurality of data aggregation trees, selecting a maximum energy tree having a maximum total residual energy from the plurality of data aggregation trees, based on the single activation zone, and generating a tree list including activation zone information which corresponds to the maximum energy tree, and information about the maximum energy tree.
    Type: Application
    Filed: August 23, 2007
    Publication date: August 14, 2008
    Applicants: Korea University Industrial & Academic Collaboration Foundation
    Inventors: Jin Wook Lee, Su-Myeon Kim, Sun Shin An, Won Keun Kong, Hun Lim, Kyung Soo Lim, Sang Bin Lee
  • Publication number: 20080195803
    Abstract: A method for reducing a memory map table search time when employing a semiconductor memory device as a temporary memory of large capacity storage device, and a semiconductor memory device therefore, are provided. A MAP RAM is prepared for storing map table data related to the nonvolatile memory area in the volatile memory area. At an initial power-up operation, it is determined whether a logical address is searched for from the map table data while the map table data existing in a map storage area of the nonvolatile memory area is loaded into the MAP RAM. A physical address corresponding to the logical address is provided as an output, when the logical address is searched for. Search time for a memory map table is reduced and read performance in a high speed map information search is increased.
    Type: Application
    Filed: February 12, 2008
    Publication date: August 14, 2008
    Inventors: Chan-Ik PARK, Jin-Wook LEE, Byoung-Kook LEE
  • Publication number: 20080183417
    Abstract: An apparatus and method of determining a number of data transmissions in a sensor network are provided. More particularly, an apparatus for determining a number of data transmissions preferably includes an interest zone detector for detecting an interest zone based on a user query, a zone determination unit for determining whether the interest zone is overlapped with a sensing zone, a zone calculator for calculating an overlap amount when the interest zone is overlapped with the sensing zone, and a transmission number determination unit for determining a number of data transmissions according to the overlap amount.
    Type: Application
    Filed: June 29, 2007
    Publication date: July 31, 2008
    Inventors: Jin Wook Lee, Hun Lim, Sun Shin An, Won Keun Kong, Su Myeon Kim, Kyung Soo Lim, Sang Bin Lee
  • Publication number: 20080170440
    Abstract: A flash memory device is disclosed and includes a memory cell array including a plurality of sectors. Each one of the plurality of sectors includes a plurality of strings, and each of the plurality of strings includes a plurality of memory cells series connected between a string select transistor and a ground select transistor. The flash memory device also includes a plurality of string selection lines, wherein each one of the plurality of string selection lines is respectively connected to string select transistors associated the plurality of strings in one of the plurality of sectors.
    Type: Application
    Filed: January 16, 2008
    Publication date: July 17, 2008
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jin-Wook LEE, Sang-Won HWANG
  • Publication number: 20080143520
    Abstract: An apparatus and method of recognizing a surrounding state are provided. The apparatus for recognizing a surrounding state includes: a unique information obtaining unit which obtains, from a peripheral device, unique information of the peripheral device; and a surrounding state determining unit which determines a surrounding state, based on the unique information.
    Type: Application
    Filed: May 25, 2007
    Publication date: June 19, 2008
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Su Myeon KIM, Jin Wook LEE, Hun LIM
  • Publication number: 20080122894
    Abstract: A head chip usable in an image forming apparatus, the head chip includes a nozzle layer having a nozzle to discharge ink onto a recording medium, a substrate layer having an ink supplying slit provided to be parallel with the nozzle layer to supply the nozzle with the ink, and a reinforcing bridge provided along an extending direction of the ink supplying slit and blocks at least one region of the ink supplying slit.
    Type: Application
    Filed: June 25, 2007
    Publication date: May 29, 2008
    Applicant: Samsung Electronics Co., Ltd
    Inventors: Jin-wook Lee, Dong-sik Shim, Sung-joon Park, Bang-weon Lee, Sang-hyun Kim
  • Patent number: 7372754
    Abstract: A nonvolatile memory device includes a nonvolatile memory cell array including a plurality of nonvolatile memory cells connected to a plurality of word lines, a word line voltage generator configured to generate first and second sequences of voltage pulses. The device selectively supplies one of the first and second sequences of voltage pulses to a selected one of the word lines to program the nonvolatile memory cells connected to the selected word line. A slope of at least one voltage pulse of the first sequence of voltage pulses is greater than a slope of at least one voltage pulse of the second sequence of voltage pulses. In general, the first sequence is applied to word lines far away from the string select line (SSL), and the second sequence is applied to word lines that are close to the SSL.
    Type: Grant
    Filed: February 16, 2006
    Date of Patent: May 13, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-Won Hwang, Jin-Wook Lee
  • Patent number: 7369442
    Abstract: A method for discharging an erase voltage of a semiconductor memory device and discharge circuit for performing the method, the method including performing a first discharge on a common source line (CSL) of the semiconductor memory device, comparing the detected CSL voltage with a predetermined reference voltage, and performing a second discharge on the CSL when the detected CSL voltage is lower than a predetermined reference voltage.
    Type: Grant
    Filed: December 15, 2005
    Date of Patent: May 6, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jin-Wook Lee, Jin-Yub Lee
  • Publication number: 20080100666
    Abstract: An inkjet printhead including a substrate through which an ink feed hole is formed to supply ink, a chamber layer formed on the substrate and including a plurality of ink chambers which are filled with ink supplied from the ink feed hole, a nozzle layer formed on the chamber layer and including a plurality of nozzles through which ink is ejected, a plurality of support walls formed between the substrate and the nozzle layer to support the substrate and the nozzle layer, and a method of fabricating the same.
    Type: Application
    Filed: April 24, 2007
    Publication date: May 1, 2008
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Sang-hyun KIM, Sung-joon Park, Bang-weon Lee, Jin-wook Lee