Patents by Inventor Jin Zhang

Jin Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10175325
    Abstract: In another exemplary embodiment of the present disclosure is an exemplary system, method and computer-accessible for determining a characteristic(s) of a tissue(s), that can include, for example, receiving magnetic resonance imaging information regarding the tissue(s) including a time-intensity curve(s) of the tissue(s) based on a contrast agent(s) concentration, actively encoding a part of the time-intensity curve(s) with a magnetic resonance relaxation property(s) of the tissue(s) by varying a magnetic resonance imaging scan parameter(s) to generate encoded data during magnetic resonance data acquisition, and determining the tissue characteristic(s) based on the encoded data.
    Type: Grant
    Filed: April 27, 2015
    Date of Patent: January 8, 2019
    Assignee: New York University
    Inventors: Sungheon Gene Kim, Jin Zhang
  • Patent number: 10178498
    Abstract: The disclosure describes a method and device for signal processing. The method includes generating a signal time series associated with a terminal device based on time points for signal collection and intensities of signals collected at the time points collected from the terminal device by signal collection devices deployed in a spatial object; obtaining at least one segment of the signal time series by segmenting the signal time series according to a pre-generated segmenting interval; and determining, for the at least one segment, if a user of the terminal device is located in the spatial object during a continuous period of time included in the at least one segment. The disclosure may be used to statistically analyze user traffic in a spatial object and reduce resource consumption.
    Type: Grant
    Filed: March 2, 2017
    Date of Patent: January 8, 2019
    Assignee: ALIBABA GROUP HOLDING LIMITED
    Inventors: Jin Zhang, Wei Lin, Lan Luo, Zhi Li, Yun Jiang
  • Publication number: 20180367380
    Abstract: A method for configuring a path for intercepting user data, a method for intercepting user data, an apparatus, a system, a control plane entity and a user plane entity, the method for configuring the path for intercepting user data comprises: acquiring a target to be intercepted and an intercepting interface address; configuring data path configuration information on a user plane entity GW-U according to the target to be intercepted and the intercepting interface address; sending the data path configuration information to the user plane entity GW-U so that the GW-U establishes a path for data transmission; initiating an establishment of an intercepting connection of an intercepting interface to an intercepting entity based on the intercepting interface address so as to transmit the data of the target to be intercepted.
    Type: Application
    Filed: August 22, 2018
    Publication date: December 20, 2018
    Inventors: Jin ZHANG, Shiyong TAN, Weihua HU
  • Patent number: 10158176
    Abstract: The present invention relates to a patch antenna having programmable frequency and polarization comprising the first metal covering layer, the dielectric layer, the second metal covering layer and four metallized through-holes, each of which are disposed sequentially from top to bottom, wherein the first metal covering layer comprises the feeding line and the radiating patch; the feeding line comprises the micro-strip line, which can be connected to the outer feeding port; the micro-strip line is connected to one side of the radiating patch through the high-resistance line; the radiating patch is a square-shaped metal patch; a gap is etched near the other side of the radiating patch, namely, the radiating edge; the gap is parallel to the radiating edge.
    Type: Grant
    Filed: May 5, 2015
    Date of Patent: December 18, 2018
    Assignee: JIANGSU HENGXIN TECHNOLOGY LIMITED CORPORATION
    Inventors: Xianqi Lin, Jin Zhang, Yuan Jiang, Jiawei Yu, Zhanyu Kang, Peng Mei, Zhonghua Liu, Yanping Hua
  • Patent number: 10153942
    Abstract: A method for configuring a path for intercepting user data, a method for intercepting user data, an apparatus, a system, a control plane entity and a user plane entity, the method for configuring the path for intercepting user data comprises: acquiring a target to be intercepted and an intercepting interface address; configuring data path configuration information on a user plane entity GW-U according to the target to be intercepted and the intercepting interface address; sending the data path configuration information to the user plane entity GW-U so that the GW-U establishes a path for data transmission; initiating an establishment of an intercepting connection of an intercepting interface to an intercepting entity based on the intercepting interface address so as to transmit the data of the target to be intercepted.
    Type: Grant
    Filed: May 19, 2015
    Date of Patent: December 11, 2018
    Assignee: Huawei Technologies Co., Ltd.
    Inventors: Jin Zhang, Shiyong Tan, Weihua Hu
  • Publication number: 20180342632
    Abstract: A solar battery includes a first electrode, a second electrode, a solar cell, an insulating layer and a gate electrode. The solar cell includes a semiconductor structure, a carbon nanotube and a transparent conductive film. The semiconductor structure includes a P-type semiconductor layer and an N-type semiconductor layer and defines a first surface and a second surface. The carbon nanotube is located on the first surface of the semiconductor. The transparent conductive film is located on the second surface of the semiconductor. The transparent conductive film is formed on the second surface by a depositing method or a coating method.
    Type: Application
    Filed: March 9, 2018
    Publication date: November 29, 2018
    Inventors: JIN ZHANG, YANG WEI, KAI-LI JIANG, SHOU-SHAN FAN
  • Publication number: 20180342690
    Abstract: A light detector includes a semiconductor element, a first electrode, a second electrode and a current detecting element electrically connected with each other to form a circuit. The semiconductor element includes a semiconductor structure, a carbon nanotube and a transparent conductive film. The semiconductor structure includes a P-type semiconductor layer and an N-type semiconductor layer and defines a first surface and a second surface. The carbon nanotube is located on the first surface of the semiconductor. The transparent conductive film is located on the second surface of the semiconductor. The transparent conductive film is formed on the second surface by a depositing method or a coating method.
    Type: Application
    Filed: March 9, 2018
    Publication date: November 29, 2018
    Inventors: JIN ZHANG, YANG WEI, KAI-LI JIANG, SHOU-SHAN FAN
  • Publication number: 20180342578
    Abstract: A semiconductor device includes a gate electrode, an insulating layer, a first carbon nanotube, a second carbon nanotube, a P-type semiconductor layer, an N-type semiconductor layer, a conductive film, a first electrode, a second electrode and a third electrode. The insulating layer is located on a surface of the gate electrode. The first carbon nanotube and the second carbon nanotube are located on a surface of the insulating layer. The P-type semiconductor layer and the N-type semiconductor layer are located on the surface of the insulating layer and apart from each other. The conductive film is located on surfaces of the P-type semiconductor layer and the N-type semiconductor layer. The first electrode is electrically connected with the first carbon nanotube. The second electrode is electrically connected with the second carbon nanotube. The third electrode is electrically connected with the conductive film.
    Type: Application
    Filed: March 9, 2018
    Publication date: November 29, 2018
    Inventors: JIN ZHANG, YANG WEI, KAI-LI JIANG, SHOU-SHAN FAN
  • Publication number: 20180342580
    Abstract: A semiconductor device includes a first electrode, a second electrode, a semiconductor element, an insulating layer and a third electrode. The semiconductor element is electrically connected to the first electrode and the second electrode. The third electrode is insulated from the semiconductor structure, the first electrode and the second electrode through the insulating layer. The semiconductor element includes a semiconductor structure, a carbon nanotube and a conductive film. The semiconductor structure includes a P-type semiconductor layer and an N-type semiconductor layer and defines a first surface and a second surface. The carbon nanotube is located on the first surface of the semiconductor. The conductive film is located on the second surface of the semiconductor. The conductive film is formed on the second surface by a depositing method or a coating method.
    Type: Application
    Filed: March 9, 2018
    Publication date: November 29, 2018
    Inventors: JIN ZHANG, YANG WEI, KAI-LI JIANG, SHOU-SHAN FAN
  • Publication number: 20180342579
    Abstract: A semiconductor element includes a semiconductor structure, a carbon nanotube and a conductive film. The semiconductor structure includes a P-type semiconductor layer and an N-type semiconductor layer and defines a first surface and a second surface. A thickness of the semiconductor structure ranges from 1 nanometer to 100 nanometers. The carbon nanotube is located on the first surface of the semiconductor. The conductive film is located on the second surface of the semiconductor. The conductive film is formed on the second surface by a depositing method or a coating method. The carbon nanotube, the semiconductor structure and the conductive film are stacked with each other to form a multi-layered stereoscopic structure.
    Type: Application
    Filed: March 9, 2018
    Publication date: November 29, 2018
    Inventors: JIN ZHANG, YANG WEI, KAI-LI JIANG, SHOU-SHAN FAN
  • Publication number: 20180342679
    Abstract: A semiconductor structure includes a semiconductor layer, a carbon nanotube and a conductive film. The semiconductor layer includes a first surface and a second surface. A thickness of the semiconductor layer ranges from 1 nanometer to 100 nanometers. The carbon nanotube is located on the first surface of the semiconductor. The conductive film is located on the second surface of the semiconductor. The conductive film is formed on the second surface by a depositing method. The carbon nanotube, the semiconductor layer and the conductive film are stacked with each other to form a three-layered stereoscopic structure.
    Type: Application
    Filed: March 9, 2018
    Publication date: November 29, 2018
    Inventors: JIN ZHANG, YANG WEI, KAI-LI JIANG, SHOU-SHAN FAN
  • Publication number: 20180338353
    Abstract: The present application discloses an on-line induction heating device for a wheel blank, consisting of a frame, a servo motor, guide posts I, guide sleeves I, a lower fixed plate, a lifting top plate, a bearing seat, a jacking cylinder, a piston connecting rod, a top cone, reset springs, radial positioning blocks, upper fixed plates, induction heating cylinders, connecting rods, double-head fastening nuts, fixed slide rails, mounting plates, outer protective jackets, induction coils, a displacement sensor I, a compression cylinder, a guide sleeve II, a guide post II, a gland, pressure sensors, asbestos, a displacement sensor II, water inlet pipes, water outlet pipes, a roller bed, transverse sliding tables, positioning cylinders, a supporting plate and lifting cylinders.
    Type: Application
    Filed: September 1, 2017
    Publication date: November 22, 2018
    Applicant: CITIC Dicastal CO.,LTD
    Inventors: Haiping CHANG, Zhixue WANG, Jin ZHANG, Rui LI, Dawei XU, Bowen XUE, Changhai LI
  • Publication number: 20180333802
    Abstract: A spinning roller surface laser reinforced processing forming method is provided. A spinning roller is normalized after forging, the normalizing temperature is controlled to 860-880 DEG C., and the heat preservation time is 40-60 minutes; the spinning roller forging blank is roughly processed to reserve a tolerance allowance of 0.5 mm on the designated working face; the spinning roller and workpiece contact surface reinforcing layer is made of Ni625+WC2, in which WC is more than 22%; a reinforcing layer having the thickness of 0.8 mm is clad with laser on the working face of the spinning roller, and the preheating temperature is controlled to 250-400 DEG C. before welding; the spinning roller laser clad reinforcing layer is rolled; and the rolled spinning roller is put into a thermal treatment furnace for thermal treatment, and quenching and tempering treatment, re-crystallization and residual stress elimination are performed.
    Type: Application
    Filed: August 29, 2017
    Publication date: November 22, 2018
    Inventors: Haiping Chang, Zhixue Wang, Shiyou Gao, Jin Zhang, Rui Li, Dawei Xu, Donghui Zhang
  • Patent number: 10135852
    Abstract: A system automatically detects bots and/or botnets.
    Type: Grant
    Filed: September 9, 2016
    Date of Patent: November 20, 2018
    Assignee: CA, Inc.
    Inventors: Zheng Chen, Chi Zhang, Jin Zhang
  • Patent number: 10133236
    Abstract: The present image formation apparatus includes a sheet output tray and an apparatus body underlying the sheet output tray, a duct being formed inside the apparatus body, a filter member being attached inside the duct, the filter member having a portion exposed outside the apparatus body, the filter member's exposed portion also serving as a portion of the sheet output tray.
    Type: Grant
    Filed: September 16, 2016
    Date of Patent: November 20, 2018
    Assignees: KONICA MINOLTA, INC., KONICA MINOLTA TECHNOLOGY DEVELOPMENT (WUXI) CO., LTD.
    Inventors: Yoshiki Omichi, Hai Jin Zhang, Min wen Zhang
  • Publication number: 20180329645
    Abstract: A logical group of data blocks stored in a first node is migrated to a second node according to a method that includes determining a first metric for each logical group of data blocks stored in the first node, the first metric representing a total size of the data blocks in the logical group, determining a second metric for each logical group of data blocks stored in the first node, the second metric representing a total size of the data blocks in the logical group that are uniquely stored in the first node, and selecting a logical group of data blocks for migration from the first node to the second node based on the first metric and the second metric.
    Type: Application
    Filed: May 11, 2017
    Publication date: November 15, 2018
    Inventors: Jorge GUERRA DELGADO, Jin ZHANG, Radhika VULLIKANTI, Abhishek GUPTA
  • Patent number: 10129749
    Abstract: A method and device for acquiring a response message, a method and device for routing the response message, and a system for acquiring the response message and routing the response message are disclosed. The method includes steps that: a source node sends a service request message to a second group of nodes via a first group of DRA nodes; and the source node acquires the service response message returned by the destination node via the second group of DRA nodes.
    Type: Grant
    Filed: January 30, 2015
    Date of Patent: November 13, 2018
    Assignee: ZTE CORPORATION
    Inventors: Xuejun Zhang, Jianxiang Wang, Rong Song, Jin Zhang, Yijun Guo
  • Patent number: 10115506
    Abstract: A sintered neodymium-iron-boron magnet, the main components thereof comprising rare-earth elements R, additional elements T, iron Fe and boron B, and having a rare-earth-enriched phase and a main phase of a Nd2Fe14B crystal structure. The sum of the numerical values of the maximum magnetic energy product (BH)max in units of MGOe and the intrinsic coercive force Hcj in units of kOe is not less than 70. The manufacturing method of the sintered neodymium-iron-boron magnet comprises alloy smelting, powder making, powder mixing, press forming, sintering and heat treatment procedures. By controlling the component formulation and optimizing the process conditions, the sintered neodymium-iron-boron magnet is enabled to simultaneously have a high maximum magnetic energy product and a high intrinsic coercive force.
    Type: Grant
    Filed: December 24, 2013
    Date of Patent: October 30, 2018
    Assignees: Beijing Zhong Ke San Huan Hi-Tech Co., LTD., Sanvac (Beijing) Magnetics Co., LTD.
    Inventors: Boping Hu, Yugang Zhao, Jin Zhang, Guoan Chen, Xiaolei Rao, E Niu, Zhian Chen, Guoshun Jin, Jingdong Jia
  • Publication number: 20180309145
    Abstract: A high-temperature operation fuel cell system includes a cell stack; a reformer; a raw material supplier supplying a raw material to the reformer; a water supplier supplying reforming water; an air supplier supplying electric power generation air; a combustion chamber in which an off-gas from the cell stack is combusted and which heats the cell stack and the reformer; an igniter igniting the off-gas in the combustion chamber; and a controller. In a start-up sequence, the controller controls so that the raw material is supplied to the reformer, the electric power generation air is supplied to the cell stack, the off-gas is ignited by the igniter, and after the ignition, the supply of the reforming water is started, and after the supply of the reforming water is started, the controller further controls the air supplier to increase the flow rate of the electric power generation air in a stepwise manner.
    Type: Application
    Filed: April 3, 2018
    Publication date: October 25, 2018
    Inventors: JIN ZHANG, SHIGENORI ONUMA, TAKASHI KAKUWA, MASASHI MORITA
  • Publication number: 20180301546
    Abstract: A method of making a thin film transistor, the method including: forming a gate insulating layer on a gate electrode; placing a semiconductor layer on the gate insulating layer; locating a first photoresist layer, a nanowire structure, a second photoresist layer on the semiconductor layer, the nanowire structure being sandwiched between the first photoresist layer and the second photoresist layer, wherein the nanowire structure comprises one nanowire; forming one opening in the first photoresist layer and the second photoresist layer to form an exposed surface, wherein a part of the nanowire is exposed in the opening; depositing a conductive film layer on the exposed surface of the semiconductor layer, wherein the conductive film layer defines a nano-scaled channel corresponding to the nanowire, the conductive film layer is divided into two regions, one region is used as a source electrode, the other region is used as a drain electrode.
    Type: Application
    Filed: December 22, 2017
    Publication date: October 18, 2018
    Inventors: MO CHEN, QUN-QING LI, LI-HUI ZHANG, XIAO-YANG XIAO, JIN ZHANG, SHOU-SHAN FAN