Abstract: The disclosure discloses a polycrystalline cubic boron nitride composite sheet having a continuous gradient structure and a preparation method thereof. The polycrystalline cubic boron nitride composite sheet consists of a cemented carbide substrate, a continuous gradient layer, and a CBN layer from bottom to top. The continuous gradient layer contains cemented carbide and CBN, a content of CBN increases in continuous gradient from bottom to top, while a content of the cemented carbide decreases in continuous gradient from bottom to top. A volume fraction D of CBN and a volume fraction M of cemented carbide in the continuous gradient layer both satisfy exponential gradient functions. At the same time, the disclosure uses direct ink writing 3D printing technology with slurry to realize the preparation of the polycrystalline cubic boron nitride composite sheet having the continuous gradient structure.

Abstract: Disclosed is a method for preparing a heterogeneous metal composite structure for medical implantation, including the steps of: step 1, preparing titanium alloy powder into a porous skeleton according to different printing strategies; step 2, filling magnesium after being melted into pores of the porous skeleton; and step 3, cooling a titanium-magnesium interpenetrating phase composite structure prepared in step 2 to room temperature, and covering a surface of the titanium-magnesium interpenetrating phase composite structure with a hydroxyapatite coating. In the present disclosure, a porous lattice dot-array structure of titanium alloy is used as a skeleton, and the skeleton pore is filled by pressureless infiltration of magnesium or hot isostatic pressure.

Abstract: An array substrate, a display panel, a display device, and a method for manufacturing an array substrate are provided. The array substrate includes an array substrate; a plurality of data signal lines arranged on the base substrate; a plurality of fan-out lines arranged side-by-side on the base substrate and respectively lapped with the plurality of data signal lines through adapter holes; and a first test lead wire arranged on the base substrate, wherein the first test lead wire includes a first test pad, a first lead wire segment, and a second lead wire segment, the first lead wire segment is electrically connected to at least a part of the plurality of fan-out lines and arranged in a same layer as the fan-out lines, and the second lead wire segment is electrically connected to the first test pad and lapped with the first lead wire segment through an adapter hole.

Abstract: Disclosed is a method for preparing a heterogeneous metal composite structure for medical implantation, including the steps of: step 1, preparing titanium alloy powder into a porous skeleton according to different printing strategies; step 2, filling magnesium after being melted into pores of the porous skeleton; and step 3, cooling a titanium-magnesium interpenetrating phase composite structure prepared in step 2 to room temperature, and covering a surface of the titanium-magnesium interpenetrating phase composite structure with a hydroxyapatite coating. In the present disclosure, a porous lattice dot-array structure of titanium alloy is used as a skeleton, and the skeleton pore is filled by pressureless infiltration of magnesium or hot isostatic pressure.

Abstract: Embodiments of the disclosure provide a display substrate and a method for manufacturing the same. The display substrate includes: a base substrate; a thin film transistor including a source-drain metal layer and a first insulating layer; a second insulating layer; a color resist layer; and a third insulating layer. The third insulating layer comprises a first via hole that sequentially penetrates the third insulating layer, the color resist layer and the second insulating layer and thus extends from the third insulating layer to the source-drain metal layer. A sidewall of the first via hole comprises a first portion formed of a material of the second insulating layer, a second portion formed of a material of the color resist layer, and a third portion formed of a material of the third insulating layer, the second portion is between the first portion and the third portion.

Abstract: Provided are an array substrate and a manufacturing method therefor, a display panel, and a display device. The array substrate includes: a plurality of electrodes arranged in an array. The electrode includes a plurality of strip electrodes that are connected to each other and spaced. The plurality of strip electrodes at least have two thicknesses. A distance between two adjacent strip electrodes is less than a preset value. During manufacturing, a mask used for forming each layer of sub-electrodes includes a plurality of strip-shaped shading regions that are connected to each other and spaced in a first direction. Strip-shaped shading regions in a mask used for sub-electrodes formed subsequently are integrally shifted by a first distance in the first direction relative to strip-shaped shading regions in a mask used for sub-electrodes formed last time.

Abstract: The present disclosure provides an array substrate and a method for manufacturing the same, a display panel and a display device. The array substrate includes along a thickness direction: a base substrate; a gate line fixing portion and a common electrode, materials of the gate line fixing portion and the common electrode are identical conductive materials and the gate line fixing portion and the common electrode are located in the same structural layer; a gate line arranged on the gate line fixing portion, and a common electrode line arranged on the common electrode, the gate line fixing portion is used for fixing the gate line to the base substrate. The display panel includes the array substrate. The display device includes the display panel. The manufacturing method is used to manufacture the array substrate.

Abstract: A thin film transistor and a manufacturing method therefor, an array substrate, and a display panel and device. The thin film transistor includes: a gate (11) and an active layer (12) that are located on one side of a base substrate (10); a gate insulation layer (13) located between the gate (11) and the active layer (12); and a source (14) and a drain (15) that are spaced apart and both are in contact with the active layer (12), wherein a first ratio of the thickness of the gate insulation layer (13) and the thickness of the active layer (12) ranges from 3 to 4.

Abstract: An array substrate, a light control panel and a display device are disclosed. The array substrate includes first and second signal lines. The first signal line includes bending-line structures including first to third wire portions; a center lines of the first wire portion intersects with a center line of the second wire portion to form a first angle; the second wire portion includes first and second sides; sides of the first and third wire portions closer to the second signal line respectively intersect with the first side at first, and second positions; sides of an orthographic projection of the second signal line on an electrode layer where the first signal line is located are intersected with the first side at third and fourth positions; a length of a line segment between first and second position is greater than a length of a line segment between third and fourth position.

Abstract: A display substrate includes a base substrate; a gate metal pattern including a gate electrode of a thin film transistor and gate lines; a source-drain metal pattern including a source electrode and a drain electrode of the thin film transistor, and data lines, where the gate line cross the data line, to define a plurality of pixel regions arranged in an array form; and a first transparent metal pattern including a common electrode pattern. A minimum distance between each gate line and common electrode patterns in a row of pixel regions located in a same row as the gate line in a first direction is a first spacing, a minimum distance between the gate line and common electrode patterns in the other row of pixel regions adjacent to the gate line in the first direction is a second spacing, and the first spacing is greater than the second spacing.

Abstract: Disclosed in the present application are a thin film transistor, a manufacturing method therefor, a display panel, and a display device. The thin film transistor includes a base substrate, and a metal conductive material, a first silicon-based intermediate layer and a first gate insulating layer sequentially located on the base substrate, where the first silicon-based intermediate layer is bonded to the metal conductive material and the first gate insulating layer by means of chemical bonds.

Abstract: An array substrate, a light control panel and a display device are disclosed. The array substrate includes first and second signal lines. The first signal line includes bending-line structures including first to third wire portions; a center lines of the first wire portion intersects with a center line of the second wire portion to form a first angle; the second wire portion includes first and second sides; sides of the first and third wire portions closer to the second signal line respectively intersect with the first side at first, and second positions; sides of an orthographic projection of the second signal line on an electrode layer where the first signal line is located are intersected with the first side at third and fourth positions; a length of a line segment between first and second position is greater than a length of a line segment between third and fourth position.

Abstract: Embodiments of the disclosure provide a display substrate and a method for manufacturing the same. The display substrate includes: a base substrate; a thin film transistor including a source-drain metal layer and a first insulating layer; a second insulating layer; a color resist layer; and a third insulating layer. The third insulating layer comprises a first via hole that sequentially penetrates the third insulating layer, the color resist layer and the second insulating layer and thus extends from the third insulating layer to the source-drain metal layer. A sidewall of the first via hole comprises a first portion formed of a material of the second insulating layer, a second portion formed of a material of the color resist layer, and a third portion formed of a material of the third insulating layer, the second portion is between the first portion and the third portion.

Abstract: The present disclosure provides a thin film transistor, a method for preparing the same, a display substrate, and a display device. The thin film transistor includes a gate electrode, a semiconductor layer, and a gate insulation layer arranged between the gate electrode and the semiconductor layer, and the gate insulation layer includes a metal oxide layer and a modified layer formed through self-assembling on a side of the metal oxide layer away from the gate electrode and.

Abstract: A display substrate includes a base substrate; a gate metal pattern including a gate electrode of a thin film transistor and gate lines; a source-drain metal pattern including a source electrode and a drain electrode of the thin film transistor, and data lines, where the gate line cross the data line, to define a plurality of pixel regions arranged in an array form; and a first transparent metal pattern including a common electrode pattern. A minimum distance between each gate line and common electrode patterns in a row of pixel regions located in a same row as the gate line in a first direction is a first spacing, a minimum distance between the gate line and common electrode patterns in the other row of pixel regions adjacent to the gate line in the first direction is a second spacing, and the first spacing is greater than the second spacing.

Abstract: The present disclosure provides an organic transistor and a manufacturing method thereof, an array substrate, and a display device. The method for manufacturing the organic transistor includes: applying a photoresist on a side of an organic insulating layer; patterning the photoresist to form a confinement well; adding a solution of an organic semiconductor material and an orthogonal solvent to the confinement well; volatilizing the orthogonal solvent by an annealing process to induce directional growth of single crystal of the organic semiconductor material in the confinement well, thereby obtaining an organic single crystal layer; and removing remaining photoresist and using the organic single crystal layer as an active layer. The embodiment of the present disclosure produces an organic single crystal in a flexible display device at a low temperature, and the organic single crystal can be used as an active layer, resulting in an organic transistor having high mobility and stability.

Abstract: The present disclosure provides a thin film transistor, a method for preparing the same, a display substrate, and a display device. The thin film transistor includes a gate electrode, a semiconductor layer, and a gate insulation layer arranged between the gate electrode and the semiconductor layer, and the gate insulation layer includes a metal oxide layer and a modified layer formed through self-assembling on a side of the metal oxide layer away from the gate electrode and.

Abstract: A thin film transistor, a method for manufacturing a thin film transistor, an array substrate and a display apparatus are provided. The thin film transistor includes a gate, a source, a drain and an active layer provided on a base substrate, both the source and the drain are electrically connected to the active layer, at least one of the source, the drain and the gate is a light-absorbing electrode, which comprises an electrode body and a light-absorbing layer, and the light-absorbing layer is arranged at a side of the electrode body facing towards the active layer.

Abstract: A switch element, an array substrate, a display panel, and a display device are disclosed. The switch element includes: a first electrode, an insulation layer, where the first electrode is located on a first side of the insulation layer; a second electrode and a third electrode arranged spaced from each other, both of which are located on a second side of the insulation layer away from the first electrode; and a first oil ink located between the second electrode and the third electrode, where the first oil ink is electrically conductive, and configured to connect or disconnect the second electrode with or from the third electrode under control of the first electrode.

Abstract: The present disclosure provides an organic transistor and a manufacturing method thereof, an array substrate, and a display device. The method for manufacturing the organic transistor includes: applying a photoresist on a side of an organic insulating layer; patterning the photoresist to form a confinement well; adding a solution of an organic semiconductor material and an orthogonal solvent to the confinement well; volatilizing the orthogonal solvent by an annealing process to induce directional growth of single crystal of the organic semiconductor material in the confinement well, thereby obtaining an organic single crystal layer; and removing remaining photoresist and using the organic single crystal layer as an active layer. The embodiment of the present disclosure produces an organic single crystal in a flexible display device at a low temperature, and the organic single crystal can be used as an active layer, resulting in an organic transistor having high mobility and stability.