Abstract: A thin film transistor and a manufacturing method therefor, an array substrate, and a display panel and device. The thin film transistor includes: a gate (11) and an active layer (12) that are located on one side of a base substrate (10); a gate insulation layer (13) located between the gate (11) and the active layer (12); and a source (14) and a drain (15) that are spaced apart and both are in contact with the active layer (12), wherein a first ratio of the thickness of the gate insulation layer (13) and the thickness of the active layer (12) ranges from 3 to 4.

Abstract: An array substrate, a light control panel and a display device are disclosed. The array substrate includes first and second signal lines. The first signal line includes bending-line structures including first to third wire portions; a center lines of the first wire portion intersects with a center line of the second wire portion to form a first angle; the second wire portion includes first and second sides; sides of the first and third wire portions closer to the second signal line respectively intersect with the first side at first, and second positions; sides of an orthographic projection of the second signal line on an electrode layer where the first signal line is located are intersected with the first side at third and fourth positions; a length of a line segment between first and second position is greater than a length of a line segment between third and fourth position.

Abstract: A display substrate includes a base substrate; a gate metal pattern including a gate electrode of a thin film transistor and gate lines; a source-drain metal pattern including a source electrode and a drain electrode of the thin film transistor, and data lines, where the gate line cross the data line, to define a plurality of pixel regions arranged in an array form; and a first transparent metal pattern including a common electrode pattern. A minimum distance between each gate line and common electrode patterns in a row of pixel regions located in a same row as the gate line in a first direction is a first spacing, a minimum distance between the gate line and common electrode patterns in the other row of pixel regions adjacent to the gate line in the first direction is a second spacing, and the first spacing is greater than the second spacing.

Abstract: Disclosed in the present application are a thin film transistor, a manufacturing method therefor, a display panel, and a display device. The thin film transistor includes a base substrate, and a metal conductive material, a first silicon-based intermediate layer and a first gate insulating layer sequentially located on the base substrate, where the first silicon-based intermediate layer is bonded to the metal conductive material and the first gate insulating layer by means of chemical bonds.

Abstract: An array substrate, a light control panel and a display device are disclosed. The array substrate includes first and second signal lines. The first signal line includes bending-line structures including first to third wire portions; a center lines of the first wire portion intersects with a center line of the second wire portion to form a first angle; the second wire portion includes first and second sides; sides of the first and third wire portions closer to the second signal line respectively intersect with the first side at first, and second positions; sides of an orthographic projection of the second signal line on an electrode layer where the first signal line is located are intersected with the first side at third and fourth positions; a length of a line segment between first and second position is greater than a length of a line segment between third and fourth position.

Abstract: Embodiments of the disclosure provide a display substrate and a method for manufacturing the same. The display substrate includes: a base substrate; a thin film transistor including a source-drain metal layer and a first insulating layer; a second insulating layer; a color resist layer; and a third insulating layer. The third insulating layer comprises a first via hole that sequentially penetrates the third insulating layer, the color resist layer and the second insulating layer and thus extends from the third insulating layer to the source-drain metal layer. A sidewall of the first via hole comprises a first portion formed of a material of the second insulating layer, a second portion formed of a material of the color resist layer, and a third portion formed of a material of the third insulating layer, the second portion is between the first portion and the third portion.

Abstract: The present disclosure provides a thin film transistor, a method for preparing the same, a display substrate, and a display device. The thin film transistor includes a gate electrode, a semiconductor layer, and a gate insulation layer arranged between the gate electrode and the semiconductor layer, and the gate insulation layer includes a metal oxide layer and a modified layer formed through self-assembling on a side of the metal oxide layer away from the gate electrode and.

Abstract: A display substrate includes a base substrate; a gate metal pattern including a gate electrode of a thin film transistor and gate lines; a source-drain metal pattern including a source electrode and a drain electrode of the thin film transistor, and data lines, where the gate line cross the data line, to define a plurality of pixel regions arranged in an array form; and a first transparent metal pattern including a common electrode pattern. A minimum distance between each gate line and common electrode patterns in a row of pixel regions located in a same row as the gate line in a first direction is a first spacing, a minimum distance between the gate line and common electrode patterns in the other row of pixel regions adjacent to the gate line in the first direction is a second spacing, and the first spacing is greater than the second spacing.

Abstract: The present disclosure provides an organic transistor and a manufacturing method thereof, an array substrate, and a display device. The method for manufacturing the organic transistor includes: applying a photoresist on a side of an organic insulating layer; patterning the photoresist to form a confinement well; adding a solution of an organic semiconductor material and an orthogonal solvent to the confinement well; volatilizing the orthogonal solvent by an annealing process to induce directional growth of single crystal of the organic semiconductor material in the confinement well, thereby obtaining an organic single crystal layer; and removing remaining photoresist and using the organic single crystal layer as an active layer. The embodiment of the present disclosure produces an organic single crystal in a flexible display device at a low temperature, and the organic single crystal can be used as an active layer, resulting in an organic transistor having high mobility and stability.

Abstract: The present disclosure provides a thin film transistor, a method for preparing the same, a display substrate, and a display device. The thin film transistor includes a gate electrode, a semiconductor layer, and a gate insulation layer arranged between the gate electrode and the semiconductor layer, and the gate insulation layer includes a metal oxide layer and a modified layer formed through self-assembling on a side of the metal oxide layer away from the gate electrode and.

Abstract: A thin film transistor, a method for manufacturing a thin film transistor, an array substrate and a display apparatus are provided. The thin film transistor includes a gate, a source, a drain and an active layer provided on a base substrate, both the source and the drain are electrically connected to the active layer, at least one of the source, the drain and the gate is a light-absorbing electrode, which comprises an electrode body and a light-absorbing layer, and the light-absorbing layer is arranged at a side of the electrode body facing towards the active layer.

Abstract: A switch element, an array substrate, a display panel, and a display device are disclosed. The switch element includes: a first electrode, an insulation layer, where the first electrode is located on a first side of the insulation layer; a second electrode and a third electrode arranged spaced from each other, both of which are located on a second side of the insulation layer away from the first electrode; and a first oil ink located between the second electrode and the third electrode, where the first oil ink is electrically conductive, and configured to connect or disconnect the second electrode with or from the third electrode under control of the first electrode.

Abstract: The present disclosure provides an organic transistor and a manufacturing method thereof, an array substrate, and a display device. The method for manufacturing the organic transistor includes: applying a photoresist on a side of an organic insulating layer; patterning the photoresist to form a confinement well; adding a solution of an organic semiconductor material and an orthogonal solvent to the confinement well; volatilizing the orthogonal solvent by an annealing process to induce directional growth of single crystal of the organic semiconductor material in the confinement well, thereby obtaining an organic single crystal layer; and removing remaining photoresist and using the organic single crystal layer as an active layer. The embodiment of the present disclosure produces an organic single crystal in a flexible display device at a low temperature, and the organic single crystal can be used as an active layer, resulting in an organic transistor having high mobility and stability.

Abstract: A switch element, an array substrate, a display panel, and a display device are disclosed. The switch element includes: a first electrode, an insulation layer, where the first electrode is located on a first side of the insulation layer; a second electrode and a third electrode arranged spaced from each other, both of which are located on a second side of the insulation layer away from the first electrode; and a first oil ink located between the second electrode and the third electrode, where the first oil ink is electrically conductive, and configured to connect or disconnect the second electrode with or from the third electrode under control of the first electrode.

Abstract: The disclosure discloses a liquid crystal display panel, a method for fabricating the same and a display device, where the liquid crystal display panel includes an array substrate and an opposite substrate arranged opposed to the array substrate, wherein a transparent flexible conductive film is arranged on a side of the opposite substrate facing away from the array substrate.

Abstract: A photoresist, a patterning method of a quantum dot layer, a QLED, a quantum dot color filter and a display device are disclosed, which can solve the problem that current patterning methods destroy quantum dots. The patterning method of a quantum dot layer includes the steps of: forming a hydrophilic photoresist pattern which comprises forming a photoresist material layer on a substrate by using a photoresist, patterning the photoresist material layer to form a photoresist pattern, and subjecting the photoresist to hydrophilic treatment; applying quantum dots; removing the quantum dots retained on the photoresist pattern; and stripping the photoresist pattern. The patterning method of a quantum dot layer in the present disclosure can improve the hydrophilic performance of the photoresist and reduce the adhesion of the lipophilic quantum dots on the photoresist.

Abstract: A thin film transistor, a method for manufacturing a thin film transistor, an array substrate and a display apparatus are provided. The thin film transistor includes a gate, a source, a drain and an active layer provided on a base substrate, both the source and the drain are electrically connected to the active layer, at least one of the source, the drain and the gate is a light-absorbing electrode, which comprises an electrode body and a light-absorbing layer, and the light-absorbing layer is arranged at a side of the electrode body facing towards the active layer.

Abstract: A manufacturing method of an array substrate, an array substrate and a display device are provided. The method includes the following operations: forming a light shielding layer formed of a metal blacken production on a base substrate, wherein the metal blacken production is a product by blackening a metal; forming a preset film layer on the base substrate which is provided with the light shielding layer; forming both a pattern of the light shielding layer and a pattern of the preset film layer through one patterning process. The method of forming a pattern of the light shielding layer and a pattern of the preset film layer through one patterning process saves one patterning process.

Abstract: Embodiments of the present invention disclose a thin film transistor and a manufacturing method thereof, an array substrate, and a display device, which relates to the field of display technology, and solves the problem that the adhesion of the electrode thin film with the adjacent thin film layer in the thin film transistor of the prior art is relatively bad. More specifically, an embodiment of the present invention provides a thin film transistor, comprising a gate, a source, a drain and a buffer layer, the buffer layer is located at one side or two sides of the gate, the source or the drain, the material of the buffer layer is a copper alloy material, the copper alloy material contains nitrogen element or oxygen element, the copper alloy material further contains aluminum element.

Abstract: An array substrate and a display device are provided. The array substrate comprises a plurality of signal lines (40), a plurality of connecting lines (50) and a driving module (60) in a peripheral region (1) outside a display region (2); the connecting lines (50) are configured for connecting the signal lines (40) and the driving module (60), to transmit signal from the signal lines (40) to the driving module (60), wherein, at least one of the connecting lines (50) and at least one of the signal lines (40) are designed to intersect with and insulated from each other in a first region (N). The at least one of the signal lines (40) includes, in a second region (0) other than the first region (N), a first electrode line layer (401) and a second electrode line layer (402), while, in the first region (N), includes the first electrode line layer (401) but does not include the second electrode line layer (402).