Abstract: A thin film transistor, a method of fabricating the same, an array substrate and a display device are disclosed. The method of fabricating the thin film transistor comprises: forming a semiconductor layer; forming a conductive film that does not react with acid solution on the semiconductor layer to be employed as a protective layer; forming a source electrode and a drain electrode on the protective layer; and removing a portion of the protective layer between the source electrode and the drain electrode to expose a portion of the semiconductor layer between the source electrode and the drain electrode.

Abstract: According to an embodiment of the present disclosure, a method for manufacturing the array substrate includes forming a first transparent conductive layer and a metallic layer successively on a base substrate, and forming a gate electrode, a source electrode, a drain electrode and a first transparent electrode by one patterning process.

Abstract: A display device, a manufacturing method thereof, a driving method thereof and a display apparatus. The display device includes: a display panel; and an electrochromic device located on a light exiting side of the display panel. The electrochromic device and the display panel share a first base substrate and a first transparent electrode in the display panel that are close to the light exiting side of the display panel.

Abstract: A manufacturing method of an array substrate is provided. The method includes sequentially depositing a first electrode layer and a gate metal layer on a base substrate, the first electrode layer including at least two conductive layers, formation materials of the at least two conductive layers having different etching rates. The method also includes forming a photoresist layer on the gate metal layer, exposing and developing the photoresist layer using a halftone mask plate, performing a first etching process on the gate metal layer, etching the first electrode layer, and ashing the photoresist layer, performing a second etching process on the gate metal layer by using remaining photoresist layer as a mask, stripping the remaining photoresist layer, and sequentially forming a semiconductor layer, a source and drain electrode layer, a via-hole and a second electrode layer on the gate metal layer on which the second etching process has been performed.

Abstract: A display panel includes a first substrate and a second substrate which are arranged opposed to each other. The space between the first substrate and the second substrate is separated into a plurality of sub-pixel regions. Within each sub pixel region, a first electrode, a first fluid layer, a second fluid layer, a hydrophobic dielectric layer and a second electrode are arranged in this order. The first fluid layer is made of hydrophilic liquid. The second fluid layer is made of ink. When no electric field is applied between the first electrode and the second electrode, the ink spreads over the surface of the hydrophobic dielectric layer. When an electric field is applied between the first electrode and the second electrode, the ink aggregates to expose the hydrophobic dielectric layer.

Abstract: The present disclosure discloses an X-ray flat-panel detector and a method for preparing the same, and a white insulating material. The X-ray flat-panel detector includes: a thin-film transistor substrate; an insulating reflection layer, which is provided on the thin-film transistor substrate and has a reflection function, wherein the insulating reflection layer is provided with a contact hole through which a source electrode of the thin-film transistor substrate is exposed; a pixel electrode, which is provided on the insulating reflection layer, wherein the pixel electrode is electrically connected to the source electrode of the thin-film transistor substrate via the contact hole; a photodiode, which covers the pixel electrode; an electrode, which is provided on the photodiode; and an X-ray conversion layer, which is provided on the electrode.

Abstract: The present disclosure discloses a pixel structure and a preparation method thereof, a pixel display method and an array substrate. The pixel structure comprises: a thin film transistor TFT for controlling a Micro-Electro-Mechanical System MEMS switch; the Micro-Electro-Mechanical System MEMS switch being used for controlling transmission amount of outgoing light of a quantum dot light emitting diode QLED device; the quantum dot light emitting diode QLED device being a top emission type for emitting light constantly based on a constant light emitting driving signal.

Abstract: The present disclosure discloses a pixel structure and a preparation method thereof, a pixel display method and an array substrate. The pixel structure comprises: a thin film transistor TFT for controlling a Micro-Electro-Mechanical System MEMS switch; the Micro-Electro-Mechanical System MEMS switch being used for controlling transmission amount of outgoing light of a quantum dot light emitting diode QLED device; the quantum dot light emitting diode QLED device being a top emission type for emitting light constantly based on a constant light emitting driving signal.

Abstract: A thin film transistor, an array substrate and a display device are provided by the present disclosure. The thin film transistor is on a base substrate, a profile of a width edge of the channel includes an up-and-down curved section in a direction perpendicular to a surface of the base substrate.

Abstract: A display panel includes a first substrate and a second substrate which are arranged opposed to each other. The space between the first substrate and the second substrate is separated into a plurality of sub-pixel regions. Within each sub pixel region, a first electrode, a first fluid layer, a second fluid layer, a hydrophobic dielectric layer and a second electrode are arranged in this order. The first fluid layer is made of hydrophilic liquid. The second fluid layer is made of ink. When no electric field is applied between the first electrode and the second electrode, the ink spreads over the surface of the hydrophobic dielectric layer. When an electric field is applied between the first electrode and the second electrode, the ink aggregates to expose the hydrophobic dielectric layer.

Abstract: A thin film transistor, a method of fabricating the same, an array substrate and a display device are disclosed. The method of fabricating the thin film transistor comprises: forming a semiconductor layer; forming a conductive film that does not react with acid solution on the semiconductor layer to be employed as a protective layer; forming a source electrode and a drain electrode on the protective layer; and removing a portion of the protective layer between the source electrode and the drain electrode to expose a portion of the semiconductor layer between the source electrode and the drain electrode.

Abstract: An array substrate and a display device are disclosed. The array substrate includes a peripheral area in which a plurality of gate electrode material lines, a plurality of source-drain electrode material lines and a plurality of first metal lines are disposed. Overlapping areas are provided between or among the gate electrode material lines, the source-drain material lines and the first metal lines; a number of the overlapping areas of the source-drain material lines and the first metal lines is less than a number of the overlapping areas of the source-drain material lines and the gate electrode material lines; the gate electrode material lines, the source-drain material lines and the first metal lines are configured as connecting lines of circuits in the peripheral area.

Abstract: A thin film transistor, a method of fabricating the same, an array substrate and a display device are disclosed. The method of fabricating the thin film transistor comprises: forming a semiconductor layer; forming a conductive film that does not react with acid solution on the semiconductor layer to be employed as a protective layer; forming a source electrode and a drain electrode on the protective layer; and removing a portion of the protective layer between the source electrode and the drain electrode to expose a portion of the semiconductor layer between the source electrode and the drain electrode.

Abstract: A manufacturing method of an array substrate is provided. The method includes sequentially depositing a first electrode layer and a gate metal layer on a base substrate, the first electrode layer including at least two conductive layers, formation materials of the at least two conductive layers having different etching rates. The method also includes forming a photoresist layer on the gate metal layer, exposing and developing the photoresist layer using a halftone mask plate, performing a first etching process on the gate metal layer, etching the first electrode layer, and ashing the photoresist layer, performing a second etching process on the gate metal layer by using remaining photoresist layer as a mask, stripping the remaining photoresist layer, and sequentially forming a semiconductor layer, a source and drain electrode layer, a via-hole and a second electrode layer on the gate metal layer on which the second etching process has been performed.

Abstract: According to an embodiment of the present disclosure, a method for manufacturing the array substrate includes forming a first transparent conductive layer and a metallic layer successively on a base substrate, and forming a gate electrode, a source electrode, a drain electrode and a first transparent electrode by one patterning process.

Abstract: An array substrate and manufacturing method thereof, an X-ray flat panel detector and an image pickup system are provided. The array substrate is divided into a plurality of detection units, and each of the detection units has a first electrode and a photoelectric conversion structure provided therein. The first electrode is disposed on a side of the photoelectric conversion structure opposite to a light incident side, and is electrically connected to the photoelectric conversion structure. A reflective layer that is electrically conductive is further included between the first electrode and the photoelectric conversion structure, and a surface of the reflective layer facing the photoelectric conversion structure is a reflection surface. The utilization rate of light can be enhanced by the array substrate as stated in embodiments of the invention, so that the detection accuracy of the X-ray flat panel detector is enhanced.

Abstract: The present disclosure provides an X-ray flat panel detector including: a base substrate; thin film transistors (TFTs), a pixel electrode layer, photodiodes, a transparent electrode layer, and an X-ray conversion layer which are arranged on the base substrate; and an electric field application portion configured to generate an electric field, wherein the photodiodes are arranged in the electric field, and a moving direction of negative charges when visible light rays are converted to electrical signals by the photodiodes is substantially same as a direction of the electric field. In this detector, it is applied a direction of the electric field which is substantially same as the moving direction of negative charges in the photodiode, so that movement of holes and electrons of the photodiode may be accelerated under an influence of the electric field, and thus the electrical signal may promptly arrive at the pixel electrode.

Abstract: An array substrate and manufacturing method thereof, an X-ray flat panel detector and an image pickup system are provided. The array substrate is divided into a plurality of detection units, and each of the detection units has a first electrode and a photoelectric conversion structure provided therein. The first electrode is disposed on a side of the photoelectric conversion structure opposite to a light incident side, and is electrically connected to the photoelectric conversion structure. A reflective layer that is electrically conductive is further included between the first electrode and the photoelectric conversion structure, and a surface of the reflective layer facing the photoelectric conversion structure is a reflection surface. The utilization rate of light can be enhanced by the array substrate as stated in embodiments of the invention, so that the detection accuracy of the X-ray flat panel detector is enhanced.

Abstract: A manufacturing method of an array substrate, an array substrate and a display device are provided. The method includes the following operations: forming a light shielding layer formed of a metal blacken production on a base substrate, wherein the metal blacken production is a product by blackening a metal; forming a preset film layer on the base substrate which is provided with the light shielding layer; forming both a pattern of the light shielding layer and a pattern of the preset film layer through one patterning process. The method of forming a pattern of the light shielding layer and a pattern of the preset film layer through one patterning process saves one patterning process.

Abstract: A photoresist, a patterning method of a quantum dot layer, a QLED, a quantum dot color filter and a display device are disclosed, which can solve the problem that current patterning methods destroy quantum dots. The patterning method of a quantum dot layer includes the steps of: forming a hydrophilic photoresist pattern which comprises forming a photoresist material layer on a substrate by using a photoresist, patterning the photoresist material layer to form a photoresist pattern, and subjecting the photoresist to hydrophilic treatment; applying quantum dots; removing the quantum dots retained on the photoresist pattern; and stripping the photoresist pattern. The patterning method of a quantum dot layer in the present disclosure can improve the hydrophilic performance of the photoresist and reduce the adhesion of the lipophilic quantum dots on the photoresist.