Abstract: An integrated circuit package and a method of forming the same are provided. A method includes forming a conductive column over a carrier. An integrated circuit die is attached to the carrier, the integrated circuit die being disposed adjacent the conductive column. An encapsulant is formed around the conductive column and the integrated circuit die. The carrier is removed to expose a first surface of the conductive column and a second surface of the encapsulant. A polymer material is formed over the first surface and the second surface. The polymer material is cured to form an annular-shaped structure. An inner edge of the annular-shaped structure overlaps the first surface in a plan view. An outer edge of the annular-shaped structure overlaps the second surface in the plan view.

Abstract: A semiconductor package and a manufacturing method for the semiconductor package are provided. The semiconductor package has a redistribution layer, at least one die over the redistribution layer, through interlayer vias on the redistribution layer and aside the die and a molding compound encapsulating the die and the through interlayer vias disposed on the redistribution layer. The semiconductor package has connectors connected to the through interlayer vias and a protection film covering the molding compound and the die. The protection film is formed by a printing process.

Abstract: Some embodiments relate to a semiconductor package. The package includes a redistribution layer (RDL), and a first semiconductor die disposed over the RDL. The first semiconductor die includes a plurality of contact pads electrically coupled to the RDL. The RDL enables fan-out connection of the first semiconductor die. A die package is disposed over the first semiconductor die and over the RDL. The die package is coupled to a first surface of the RDL by a plurality of conductive bump structures. The plurality of conductive bump structures laterally surround the plurality of contact pads and have uppermost surfaces that are level with an uppermost surface of the first semiconductor die.

Abstract: An embodiment is a method including: attaching a first die to a first side of a first component using first electrical connectors, attaching a first side of a second die to first side of the first component using second electrical connectors, attaching a dummy die to the first side of the first component in a scribe line region of the first component, adhering a cover structure to a second side of the second die, and singulating the first component and the dummy die to form a package structure.

Abstract: Some embodiment structures and methods are described. A structure includes an integrated circuit die at least laterally encapsulated by an encapsulant, and a redistribution structure on the integrated circuit die and encapsulant. The redistribution structure is electrically coupled to the integrated circuit die. The redistribution structure includes a first dielectric layer on at least the encapsulant, a metallization pattern on the first dielectric layer, a metal oxide layered structure on the metallization pattern, and a second dielectric layer on the first dielectric layer and the metallization pattern. The metal oxide layered structure includes a metal oxide layer having a ratio of metal atoms to oxygen atoms that is substantially 1:1, and a thickness of the metal oxide layered structure is at least 50 ?. The second dielectric layer is a photo-sensitive material. The metal oxide layered structure is disposed between the metallization pattern and the second dielectric layer.

Abstract: Embodiments of the present disclosure include semiconductor packages and methods of forming the same. An embodiment is a method including forming a first die package, the first die package including a first die, a first electrical connector, and a first redistribution layer, the first redistribution layer being coupled to the first die and the first electrical connector, forming an underfill over the first die package, patterning the underfill to have an opening to expose a portion of the first electrical connector, and bonding a second die package to the first die package with a bonding structure, the bonding structure being coupled to the first electrical connector in the opening of the underfill.

Abstract: A method includes forming a release film over a carrier, attaching a device over the release film through a die-attach film, encapsulating the device in an encapsulating material, performing a planarization on the encapsulating material to expose the device, detaching the device and the encapsulating material from the carrier, etching the die-attach film to expose a back surface of the device, and applying a thermal conductive material on the back surface of the device.

Abstract: A method is disclosed that includes operations as follows: after forming an ion-implanted layer disposed between an epitaxial layer and a first semiconductor substrate, bounding the epitaxial layer to a bonding oxide layer without forming any layer between the epitaxial layer and the bonding oxide layer; and removing the first semiconductor substrate together with a portion of the ion-implanted layer and keeping a remaining portion of the ion-implanted layer on the epitaxial layer.

Abstract: A method includes providing a die having a contact pad on a top surface and forming a conductive protective layer over the die and covering the contact pad. A molding compound is formed over the die and the conductive protective layer. The conductive protective layer is exposed using a laser drilling process. A redistribution layer (RDL) is formed over the die. The RDL is electrically connected to the contact pad through the conductive protective layer.

Abstract: A semiconductor package includes an interposer chip having a frontside, a backside, and a corner area on the backside defined by a first corner edge and a second corner edge of the interposer chip. A die is bonded to the frontside of the interposer chip. At least one dam structure is formed on the corner area of the backside of the interposer chip. The dam structure includes an edge aligned to at least one the first corner edge and the second corner edge of the interposer chip.

Abstract: A method of making a semiconductor device includes patterning a photoresist on a substrate to form a plurality of openings in the photoresist. A first opening is near a center of the substrate and has a first width. A second opening is near an edge of the substrate and has a second width smaller than the first width. A third opening is between the first opening and the second opening and has a third width greater than the second width and smaller than the first width. The method further includes plating a conductive material into each opening. Plating the conductive material includes plating the first conductive material in the first opening at a first current density; plating the first conductive material in the second opening at a second current density greater than the first current density; and plating the conductive material in the third opening at a third current density.

Abstract: An embodiment is a method including depositing a first dielectric layer over a molding compound and a chip and patterning a first opening in the first dielectric layer to expose a contact of the chip. A first metallization layer is deposited over the first dielectric layer and in the first opening, where a portion of the first metallization layer in the first opening has a flat top. A second dielectric layer is deposited over the first metallization layer and the first dielectric layer. A second metallization layer is deposited in a second opening in the second dielectric layer, where the second metallization layer does not have a flat top within the second opening.

Abstract: A method includes forming a metal layer extending into openings of a dielectric layer to contact a first metal pad and a second metal pad, and bonding a bottom terminal of a component device to the metal layer. The metal layer has a first portion directly underlying and bonded to the component device. A raised via is formed on the metal layer, and the metal layer has a second portion directly underlying the raised via. The metal layer is etched to separate the first portion and the second portion of the metal layer from each other. The method further includes coating the raised via and the component device in a dielectric layer, revealing the raised via and a top terminal of the component device, and forming a redistribution line connecting the raised via to the top terminal.

Abstract: A semiconductor device includes a substrate, a first redistribution layer (RDL) over a first side of the substrate, one or more semiconductor dies over and electrically coupled to the first RDL, and an encapsulant over the first RDL and around the one or more semiconductor dies. The semiconductor device also includes connectors attached to a second side of the substrate opposing the first side, the connectors being electrically coupled to the first RDL. The semiconductor device further includes a polymer layer on the second side of the substrate, the connectors protruding from the polymer layer above a first surface of the polymer layer distal the substrate. A first portion of the polymer layer contacting the connectors has a first thickness, and a second portion of the polymer layer between adjacent connectors has a second thickness smaller than the first thickness.

Abstract: A package includes a first die and a second die. The first die includes a first substrate and a first metal pad overlying the first substrate. The second die includes a second substrate and a second metal pad overlying the second substrate. A molding compound molds the first die and the second die therein. The molding compound has a first portion between the first die and the second die, and a second portion, which may form a ring encircles the first portion. The first portion and the second portion are on opposite sides of the first die. The first portion has a first top surface. The second portion has a second top surface higher than the first top surface.

Abstract: An apparatus is provided, comprising: a wafer having a first planar surface and a second surface opposite the first surface. The second surface includes a plurality of recesses. Each recess includes a plurality of sidewalls and a lower surface and is configured to receive a semiconductor device. The plurality of sidewalls of each recess is configured to align the semiconductor device and constrain the semiconductor device from moving in a direction parallel to the second surface.

Abstract: A package includes a device die, a through-via having a sand timer profile, and a molding material molding the device die and the through-via therein, wherein a top surface of the molding material is substantially level with a top surface of the device die. A dielectric layer overlaps the molding material and the device die. A plurality of redistribution lines (RDLs) extends into the dielectric layer to electrically couple to the device die and the through-via.

Abstract: A device includes a substrate, and an alignment mark including a conductive through-substrate via (TSV) penetrating through the substrate.

Abstract: A semiconductor package and a manufacturing method for the semiconductor package are provided. The semiconductor package has a redistribution layer, at least one die over the redistribution layer, through interlayer vias on the redistribution layer and aside the die and a molding compound encapsulating the die and the through interlayer vias disposed on the redistribution layer. The semiconductor package has connectors connected to the through interlayer vias and a protection film covering the molding compound and the die. The protection film is formed by a printing process.

Abstract: Some embodiments relate to a semiconductor package. The package includes a redistribution layer (RDL), and a first semiconductor die disposed over the RDL. The first semiconductor die includes a plurality of contact pads electrically coupled to the RDL. The RDL enables fan-out connection of the first semiconductor die. A die package is disposed over the first semiconductor die and over the RDL. The die package is coupled to a first surface of the RDL by a plurality of conductive bump structures. The plurality of conductive bump structures laterally surround the plurality of contact pads and have uppermost surfaces that are level with an uppermost surface of the first semiconductor die.