Abstract: A method includes forming a release film over a carrier, attaching a device over the release film through a die-attach film, encapsulating the device in an encapsulating material, performing a planarization on the encapsulating material to expose the device, detaching the device and the encapsulating material from the carrier, etching the die-attach film to expose a back surface of the device, and applying a thermal conductive material on the back surface of the device.

Abstract: Some embodiment structures and methods are described. A structure includes an integrated circuit die at least laterally encapsulated by an encapsulant, and a redistribution structure on the integrated circuit die and encapsulant. The redistribution structure is electrically coupled to the integrated circuit die. The redistribution structure includes a first dielectric layer on at least the encapsulant, a metallization pattern on the first dielectric layer, a metal oxide layered structure on the metallization pattern, and a second dielectric layer on the first dielectric layer and the metallization pattern. The metal oxide layered structure includes a metal oxide layer having a ratio of metal atoms to oxygen atoms that is substantially 1:1, and a thickness of the metal oxide layered structure is at least 50 ?. The second dielectric layer is a photo-sensitive material. The metal oxide layered structure is disposed between the metallization pattern and the second dielectric layer.

Abstract: The display control method for an electronic device with a foldable screen according to an embodiment of this application includes: The electronic device determines a first use posture of using the electronic device by a user, and locks a first screen in response to the first use posture; and when detecting a photographing scenario of a camera and a flip operation performed by the user of the electronic device, the electronic device detects whether an object approaches the electronic device, and in response to a detection result, switches from performing displaying on the first screen to performing displaying on a second screen, or maintains the first screen on and the second screen off. In embodiments of this application, intelligent screen locking or automatic screen switching can be implemented based on different application scenarios, to implement an intelligent terminal device, and improve use performance of the terminal device.

Abstract: A semiconductor package includes an interposer chip having a frontside, a backside, and a corner area on the backside defined by a first corner edge and a second corner edge of the interposer chip. A die is bonded to the frontside of the interposer chip. At least one dam structure is formed on the corner area of the backside of the interposer chip. The dam structure includes an edge aligned to at least one the first corner edge and the second corner edge of the interposer chip.

Abstract: A method includes forming a release film over a carrier, attaching a device over the release film through a die-attach film, encapsulating the device in an encapsulating material, performing a planarization on the encapsulating material to expose the device, detaching the device and the encapsulating material from the carrier, etching the die-attach film to expose a back surface of the device, and applying a thermal conductive material on the back surface of the device.

Abstract: Described herein is a method for producing a contact lens comprising a central photochromic zone that has a diameter of about 13 mm or less and is concentric with the central axis of the contact lens. The method comprises: applying, in the center of the molding surface of a male mold half, a drop (having a volume of about 5 ?L or less) of a first polymerizable fluid composition containing at least one photochromic compound and a relatively-high molecular weight polysiloxane vinylic crosslinker for increasing the viscosity and adhesion on the molding surface of the male mold half; dosing a second polymerizable fluid composition in a female mold hald; closing the female mold hald with the male mold half with the drop thereon to form a molding assembly; and curing the second polymerizable fluid composition and the drop of the first polymerizable fluid composition in the molding assembly.

Abstract: The present disclosure provides a powder-atomic-layer-deposition device with knocker, which mainly includes a vacuum chamber, a shaft seal, a drive unit and a knocker. The drive unit is connected to the rear wall of the vacuum chamber via the shaft seal, for driving the vacuum chamber to rotate. The shaft seal includes an outer tube and an inner tube, wherein the inner tube is disposed within the containing space of the outer tube. The inner tube is disposed with a gas-extracting pipeline and a gas-inlet pipeline therein, wherein the gas-extracting pipeline is for gas extraction of the vacuum chamber, the gas-inlet pipeline is for transferring a precursor gas into the vacuum chamber. The knocker and the vacuum chamber are adjacent to each other, for knocking the vacuum chamber to prevent powders within the reacting space from sticking to the inner surface of the vacuum chamber.

Abstract: The present disclosure provides a thin-film-deposition equipment for detecting shielding mechanism, which includes a reaction chamber, a carrier, a shielding mechanism and two distance sensors. The carrier and the shielding mechanism is partially disposed within the reaction chamber. The shielding mechanism includes two shield unit and a driver. The driver interconnects and drives the two shield units to sway in opposite directions and into an open state and a shielding state. Each of the two shield unit is disposed with a reflective surface for each of the two distance sensors to respectively project optical beams onto and detect a distances therebetween when the two shield units are operated in the shielding state, such that to confirm that the shielding mechanism is in the shielding state.

Abstract: The present disclosure provides a thin-film-deposition equipment with double-layer shielding device, which includes a reaction chamber, a carrier and a double-layer shielding device. The double-layer shielding device includes a first-shield member, a second-shield member, a first-guard plate, a second-guard plate and a driver. The first-guard plate is disposed on the first-shield member, the second-guard plate is disposed on the second-shield member. The driver interconnects the two shield members for driving and swinging the two shield members to move in opposite directions. During a cleaning process, the driver swings the two shield members toward each other into a shielding state for covering the carrier, the two guard plates thereon also approach each other to cover the shield members, such that to effectively prevent polluting the carrier during the process of cleaning the thin-film-deposition equipment.

Abstract: The present disclosure is a substrate-processing chamber with a shielding mechanism, which includes a reaction chamber, a substrate carrier, a storage chamber and a shielding mechanism. The reaction chamber is connected to the storage chamber, the substrate carrier is within the reaction chamber. The shielding mechanism includes at least one guide unit, at least one connecting seat, a shield and at least one drive arm. The drive arm is connected to the shield for driving the shield to move between the storage chamber and the reaction chamber. During a deposition process, the drive arm drives the shield to move into the storage space. During a cleaning process, the drive arm moves the shield to move into the reaction chamber for prevent pollution to the substrate carrier.

Abstract: A semiconductor device has a conductive via laterally separated from the semiconductor, an encapsulant between the semiconductor device and the conductive via, and a mark. The mark is formed from characters that are either cross-free characters or else have a overlap count of less than two. In another embodiment the mark is formed using a wobble scan methodology. By forming marks as described, defects from the marking process may be reduced or eliminated.

Abstract: The invention is directed to an embedded hydrogel contact lens, which comprises an insert sandwiched between two layers of hydrogel materials and can be produced according to a cast molding method including the procedures involving two females halves (FC1 and FC2) and two male halves (BC1 and BC2) and three consequential molding steps involving three molding assemblies: the 1st one formed between FC1 and BC1 for molding an insert; the 2nd one formed between FC1 and BC2 for molding a lens precursor having the molded insert embedded in a layer of a hydrogel material in a way that the front surface of the molded insert merges with the convex surface of the lens precursor; and the 3rd one formed between FC2 and BC2 for molding an embedded hydrogel contact of the invention.

Abstract: The invention relates to a method for producing embedded hydrogel contact lenses involving a set of 3-mold halves consisting essentially of: one female lens mold half having a molding surface defining the anterior surface of a contact lens; one male lens mold half having a molding surface defining the posterior surface of the contact lens; and an insert mold half having a molding surface defining one of the front and back surfaces of an insert. One of the lens mold halves is used twice: first with the insert mold half for molding an insert during first curing process and then with the other lens mold half for molding an embedded hydrogel contact lens with the molded insert embedded partially or fully therein during second curing process. The invention also relates to embedded hydrogel contact lenses produced from a method of the invention.

Abstract: An integrated fan out package on package architecture is utilized along with a reference via in order to provide a reference voltage that extends through the InFO-POP architecture. If desired, the reference via may be exposed and then connected to a shield coating that can be used to shield the InFO-POP architecture. The reference via may be exposed by exposing either a top surface or a sidewall of the reference via using one or more singulation processes.

Abstract: A semiconductor device and method utilizing a dummy structure in association with a redistribution layer is provided. By providing the dummy structure adjacent to the redistribution layer, damage to the redistribution layer may be reduced from a patterning of an overlying passivation layer, such as by laser drilling. By reducing or eliminating the damage caused by the patterning, a more effective bond to an overlying structure, such as a package, may be achieved.

Abstract: Disclosed probes comprise metal nanoparticle cores associated with magnetic particles that allow probes associated with targets to be concentrated by an applied magnetic field to increase detection sensitivity and provide sufficient spacing between concentrated probes to avoid signal quenching. The probe may comprise at least one recognition receptor, and may further comprise at least one reporter molecule, such as a fluorescent tag, a Raman reporter, or combinations thereof. Concentrating probe-target composites substantially enhances a sensing signal, such as from 5 to 10 times, compared to detection without concentrating the probes. The method may be used to detect, for example, interleukins at concentrations at least as low as 25 pg/ml in sputum or blood from a subject for early and precise profiling of viral infections, such as SARS-CoV-2 infections.

Abstract: Some embodiment structures and methods are described. A structure includes an integrated circuit die at least laterally encapsulated by an encapsulant, and a redistribution structure on the integrated circuit die and encapsulant. The redistribution structure is electrically coupled to the integrated circuit die. The redistribution structure includes a first dielectric layer on at least the encapsulant, a metallization pattern on the first dielectric layer, a metal oxide layered structure on the metallization pattern, and a second dielectric layer on the first dielectric layer and the metallization pattern. The metal oxide layered structure includes a metal oxide layer having a ratio of metal atoms to oxygen atoms that is substantially 1:1, and a thickness of the metal oxide layered structure is at least 50 ?. The second dielectric layer is a photo-sensitive material. The metal oxide layered structure is disposed between the metallization pattern and the second dielectric layer.

Abstract: An atomic layer deposition device is disclosed. The atomic layer deposition device includes a chamber, a precursor inlet, a heater, a support unit, a hollow component, and a baffle. When the heater and the support unit are driven by a lifting device to approach the hollow component, the support unit and the baffle surround and set bounds to a reaction space, so that the flow field of the process fluid, such as precursor or purge gas, can be adjusted stably to make a uniform deposition on the substrate.

Abstract: The present disclosure is a substrate-processing chamber with a shielding mechanism with the same, which includes a reaction chamber, a substrate carrier, a storage chamber and a shielding mechanism. The reaction chamber is connected to the storage chamber, the substrate carrier is within the reaction chamber. The shielding mechanism includes at least one driving shaft, at least one connecting seat and a shield, wherein the driving shaft extends from the storage chamber to the reaction chamber. The connecting seat is connected to the shield and the driving shaft, wherein the driving shaft drives the shield to move between the storage chamber and the reaction chamber, via the connecting seat.

Abstract: The present disclosure provides a laser lift-off method for separating substrate and semiconductor-epitaxial structure, which includes: providing at least one semiconductor device, wherein the semiconductor device includes a substrate and at least one semiconductor-epitaxial structure disposed in a stack-up manner; irradiating a laser onto an edge area of the semiconductor device to separate portions of the substrate and the semiconductor-epitaxial structure in the edge area; and pressing against the edge area of the semiconductor device vis a pressing device, then irradiating the laser onto an inner area of the semiconductor device to separate portions of the substrate and the semiconductor-epitaxial structure in the inner area wherein gas is generated during separating the portions of the substrate and the semiconductor-epitaxial structure in the inner area and evacuated from the edge area, to prevent damage of the semiconductor-epitaxial structure during the separating process.