Abstract: A proximity sensor includes a printed circuit board substrate, a semiconductor die, electrical connectors, a lens, a light emitting assembly, and an encapsulating layer. The semiconductor die is positioned over the printed circuit board substrate with its upper surface facing away from the printed circuit board substrate. Each of the electrical connectors is in electrical communication with a contact pad of the semiconductor die and a respective contact pad of the printed circuit board substrate. The lens is positioned over a sensor area of the semiconductor die. The light emitting assembly includes a light emitting device having a light emitting area, a lens positioned over the light emitting area, and contact pads facing the printed circuit board substrate. The encapsulating layer is positioned on the printed circuit board substrate, at least one of the electrical connectors, the semiconductor die, the lens, and the light emitting assembly.

Abstract: A semiconductor device having a channel between active sections or portions of the device is disclosed. An elastic material, such as dielectric or a polymer, is deposited into the channel and cured to increase flexibility and thermal expansion properties of the semiconductor device. The elastic material reduces the thermal and mechanical mismatch between the semiconductor device and the substrate to which the semiconductor device is coupled in downstream processing to improve reliability. The semiconductor device may also include a plurality of channels formed transverse with respect to each other. Some of the channels extend all the way through the semiconductor device, while other channels extend only partially through the semiconductor device.

Abstract: The present disclosure is directed to embodiments of sensor package including a doped resin on respective surfaces and sidewalls of a transparent portion, a sensor die, and a support structure extending from the transparent portion to the sensor die. The support structure suspends the transparent portion over a sensor of the sensor die. The doped resin is doped with an additive material, and the additive material is activated by exposing the doped resin to a laser. The doped resin is exposed to the laser forming conductive layers extending along the doped resin for providing electrical connections within the sensor package and to electronic components external to the embodiments of the sensor die packages. The conductive layers are at least partially covered by a non-conductive layer.

Abstract: Provided is a sensor package with an integrated circuit embedded in a substrate and a sensor die on the substrate. The substrate includes a molding compound that has additives configured to respond to a laser. The integrated circuit is embedded in the molding compound. An opening is through the substrate and is aligned with the sensor die. A lid covers the sensor die and the substrate, forming a cavity. At least one trace is formed on a first surface of the substrate, on an internal sidewall of the opening and on a second surface of the substrate with a laser direct structuring process.

Abstract: Described herein is a method of forming wafer-level packages from a wafer. The method includes adhesively attaching front sides of first integrated circuits within the wafer to back sides of second integrated circuits such that pads on the front sides of the first integrated circuits and pads on front sides of the second integrated circuits are exposed. The method further includes forming a laser direct structuring (LDS) activatable layer over the front sides of the first integrated circuits and the second integrated circuits and over edges of the second integrated circuits, and forming desired patterns of structured areas within the LDS activatable layer. The method additionally includes metallizing the desired patterns of structured areas to form conductive areas within the LDS activatable layer.

Abstract: A proximity sensor includes a printed circuit board substrate, a semiconductor die, electrical connectors, a lens, a light emitting assembly, and an encapsulating layer. The semiconductor die is positioned over the printed circuit board substrate with its upper surface facing away from the printed circuit board substrate. Each of the electrical connectors is in electrical communication with a contact pad of the semiconductor die and a respective contact pad of the printed circuit board substrate. The lens is positioned over a sensor area of the semiconductor die. The light emitting assembly includes a light emitting device having a light emitting area, a lens positioned over the light emitting area, and contact pads facing the printed circuit board substrate. The encapsulating layer is positioned on the printed circuit board substrate, at least one of the electrical connectors, the semiconductor die, the lens, and the light emitting assembly.

Abstract: The present disclosure is directed to embodiments of optical sensor packages. For example, at least one embodiment of an optical sensor package includes a light-emitting die, a light-receiving die, and an interconnect substrate within a first resin. A first transparent portion is positioned on the light-emitting die and the interconnect substrate, and a second transparent portion is positioned on the light-receiving die and the interconnect substrate. A second resin is on the first resin, the interconnect substrate, and the first and second transparent portions, respectively. The second resin partially covers respective surfaces of the first and second transparent portions, respectively, such that the respective surfaces are exposed from the second resin.

Abstract: The present disclosure is directed to embodiments of semiconductor device packages including a plurality of conductive vias and traces formed by an laser-direct structuring process, which includes at least a lasering step and a plating step. First ones of the plurality of conductive vias extend into an encapsulant to contact pads of a die encased within the encapsulant, and second ones of the plurality of conductive vias extend in the encapsulant to end portions of leads in the encapsulant. The second ones of the plurality of conductive vias may couple the leads to contact pads of the die. In some embodiments, the leads of the semiconductor device packages may extend outward and away from encapsulant. In some other alternative embodiments, the leads of the semiconductor device packages may extend outward and away from the encapsulant and then bend back toward the encapsulant such that an end of the lead overlaps a surface of the encapsulant at which the plurality of conductive vias are present.

Abstract: A method of forming a wafer-level package includes singulating a wafer into a plurality of reconstituted integrated circuit dice, affixing a carrier to a front side of the plurality of integrated circuit dice, and forming a laser direct structuring (LDS) activatable resin over a back side of the plurality of integrated circuit dice, over side edges of the plurality of integrated circuit die, and over adjacent portions of the carrier. Desired areas of the LDS activatable resin are activated to form conductive areas within the LDS activatable resin, at least one of the conductive areas associated with each integrated circuit die being formed to contact a respective a respective pad of that integrated circuit die and to run alongside to and in contact with a side of the LDS activatable resin in contact with a side edge of that integrated circuit die.

Abstract: The present disclosure is directed to a package that includes a plurality of die that are stacked on each other. The plurality of die are within a first resin and conductive layer is on the first resin. The conductive layer is coupled between ones of first conductive vias extending into the first resin to corresponding ones of the plurality of die. The conductive layer and the first conductive vias couple ones of the plurality of die to each other. A second conductive via extends into the first resin to a contact pad of the substrate, and the conductive layer is coupled to the second conductive via coupling ones of the plurality of die to the contact pad of the substrate. A second resin is on and covers the first resin and the conductive layer on the first resin. In some embodiments, the first resin includes a plurality of steps (e.g., a stepped structure). In some embodiments, the first resin includes inclined surfaces (e.g., sloped surfaces).

Abstract: A molded carrier is formed by a unitary body made of a laser direct structuring (LDS) material and includes a blind opening with a bottom surface. The unitary body includes: a floor body portion defining a back side and the bottom surface of the blind opening and an outer peripheral wall body portion defining a sidewall surface of the blind opening. LDS activation followed by electro-plating is used to produce: a die attach pad and bonding pad at the bottom surface; land grid array (LGA) pads at the back side; and vias extending through the floor body portion to make electrical connections between the die attach pad and one LGA pad and between the bonding pad and another LGA pad. An integrated circuit chip is mounted to the die attach pad and wire bonded to the bonding pad. A wafer-scale manufacturing process is used to form the molded carrier.

Abstract: The present disclosure is directed to semiconductor packages that include a molding compound having at least one raised portion that extends outward from the package. In some embodiments, the semiconductor packages have a plurality of raised portions, and a plurality of conductive layers are on the plurality of raised portions. The plurality of raised portions and the plurality of conductive layers are utilized to mount the semiconductor packages to an external electronic device (e.g., a printed circuit board (PCB), another semiconductor package, an external electrical connection, etc.). In some embodiments, the semiconductor packages have a single raised portion with a plurality of conductive layers that are on the single raised portion. The single raised portion and the plurality of conductive layers are utilized to mount the semiconductor packages to the external electronic device.

Abstract: The present disclosure is directed to a sensor die with an embedded light sensor and an embedded light emitter as well as methods of manufacturing the same. The light emitter in the senor die is surrounded by a resin. The sensor die is incorporated into semiconductor device packages as well as methods of manufacturing the same. The semiconductor device packages include a first optically transmissive structure on the light sensor of the sensor die and a second optically transmissive structure on the light emitter of the sensor die. The first optically transmissive structure and the second optically transmissive structure cover and protect the light sensor and the light emitter, respectively. A molding compound is on a surface of a sensor die and covers sidewalls of the first and second optically transmissive structures on the sensor die.

Abstract: The present disclosure is directed to a package (e.g., a chip scale package, a wafer level chip scale package (WLCSP), or a package containing a sensor die) with a sensor die on a substrate (e.g., an application-specific integrated circuit die (ASIC), an integrated circuit, or some other type of die having active circuitry) and encased in a molding compound. The sensor die includes a sensing component that is aligned with a centrally located opening that extends through the substrate. The centrally located opening extends through the substrate at an inactive portion of the substrate. The centrally located opening exposes the sensing component of the sensor die to an external environment outside the package.

Abstract: The present disclosure is directed to an optical sensor package with a first assembly and a second assembly with an encapsulant extending between and coupling the first assembly and the second assembly. The first assembly includes a first substrate, a first die on the first substrate, a transparent material on the first die, and an infrared filter on the transparent material. The second assembly includes a second substrate, a second die on the second substrate, a transparent material on the second die, and an infrared filter on the transparent material. Apertures are formed through the encapsulant aligned with the first die and the second die. The first die is configured to transmit light through one aperture, wherein the light reflects off an object to be detected and is received at the second die through another one of the apertures.

Abstract: A wafer level chip scale package (WLCSP) with portions that have different thicknesses. A first passive surface of a die in the WLSCP includes a plurality of surfaces. The plurality of surfaces may include inclined surfaces or flat surfaces. Thicker portions of die, with more semiconductor material remaining are non-critical portions that increase a WLCSP's strength for further processing and handling after formation, and the thinner portions are critical portions that reduce a Coefficient of Thermal Expansion (CTE) mismatch between a WLCSP and a PCB.

Abstract: A semiconductor device having a channel between active sections or portions of the device is disclosed. An elastic material, such as dielectric or a polymer, is deposited into the channel and cured to increase flexibility and thermal expansion properties of the semiconductor device. The elastic material reduces the thermal and mechanical mismatch between the semiconductor device and the substrate to which the semiconductor device is coupled in downstream processing to improve reliability. The semiconductor device may also include a plurality of channels formed transverse with respect to each other. Some of the channels extend all the way through the semiconductor device, while other channels extend only partially through the semiconductor device.

Abstract: A proximity sensor includes a printed circuit board substrate, a semiconductor die, electrical connectors, a lens, a light emitting assembly, and an encapsulating layer. The semiconductor die is positioned over the printed circuit board substrate with its upper surface facing away from the printed circuit board substrate. Each of the electrical connectors is in electrical communication with a contact pad of the semiconductor die and a respective contact pad of the printed circuit board substrate. The lens is positioned over a sensor area of the semiconductor die. The light emitting assembly includes a light emitting device having a light emitting area, a lens positioned over the light emitting area, and contact pads facing the printed circuit board substrate. The encapsulating layer is positioned on the printed circuit board substrate, at least one of the electrical connectors, the semiconductor die, the lens, and the light emitting assembly.

Abstract: A proximity sensor includes a printed circuit board substrate, a semiconductor die, electrical connectors, a lens, a light emitting assembly, and an encapsulating layer. The semiconductor die is positioned over the printed circuit board substrate with its upper surface facing away from the printed circuit board substrate. Each of the electrical connectors is in electrical communication with a contact pad of the semiconductor die and a respective contact pad of the printed circuit board substrate. The lens is positioned over a sensor area of the semiconductor die. The light emitting assembly includes a light emitting device having a light emitting area, a lens positioned over the light emitting area, and contact pads facing the printed circuit board substrate. The encapsulating layer is positioned on the printed circuit board substrate, at least one of the electrical connectors, the semiconductor die, the lens, and the light emitting assembly.

Abstract: One or more embodiments are directed to system in package (SiP) for optical devices, such as proximity sensing or optical ranging devices. One embodiment is directed to an optical sensor package that includes a substrate, a sensor die coupled to the substrate, a light-emitting device coupled to the substrate, and a cap. The cap is positioned around side surfaces of the sensor die and covers at least a portion of the substrate. The cap includes first and second sidewalls, an inner wall having first and second side surfaces and a mounting surface, and a cover in contact with the first and second sidewalls and the inner wall. The first and second side surfaces are transverse to the mounting surface, and the inner wall includes an opening extending into the inner wall from the mounting surface. A first adhesive material is provided on the sensor die and at least partially within the opening, and secures the inner wall to the sensor die.