Abstract: A proximity detector device may include a first interconnect layer including a first dielectric layer, and first electrically conductive traces carried thereby, an IC layer above the first interconnect layer and having an image sensor IC, and a light source IC laterally spaced from the image sensor IC. The proximity detector device may include a second interconnect layer above the IC layer and having a second dielectric layer, and second electrically conductive traces carried thereby. The second interconnect layer may have first and second openings therein respectively aligned with the image sensor IC and the light source IC. Each of the image sensor IC and the light source IC may be coupled to the first and second electrically conductive traces. The proximity detector device may include a lens assembly above the second interconnect layer and having first and second lenses respectively aligned with the first and second openings.

Abstract: Embodiments of the present disclosure provide a semiconductor device, a semiconductor package, and a method for manufacturing a semiconductor device. The semiconductor device comprises: a semiconductor die; an electrical isolation layer formed on a surface of the semiconductor die; a substrate; and a non-conductive adhesive layer disposed between the electrical isolation layer and the substrate, so as to adhere the electrical isolation layer to the substrate.

Abstract: A method includes forming a molded panel that includes a number of integrated circuits, fan-out components and stiffeners embedded in an encapsulation material. A redistribution layer is formed over the integrated circuits and the fan-out components. The redistribution layer is electrically coupled to contacts of the integrated circuits. The molded panel is singulated to form electronic devices. Each electronic device each an integrated circuit that is separated from a fan-out component by a portion of the encapsulation material and a stiffener separated from the fan-out component by a second portion of the encapsulation material.

Abstract: One or more embodiments are directed to a semiconductor package that includes an integrated heatsink and methods of forming same. In one embodiment, the semiconductor package includes a semiconductor die coupled to a first surface of a die pad. A heatsink is coupled to a second surface of the die pad. Encapsulation material is located around the die and die pad and over a portion of the heatsink. A bottom portion of the heatsink may remain exposed from the encapsulation material. Furthermore, a portion of the heatsink may extend from a side of the encapsulation material.

Abstract: The embodiments of the present disclosure provide a proximity sensor, an electronic apparatus and a method for manufacturing a proximity sensor. The proximity sensor comprises a substrate, a sensor chip, a light-emitting device, a non-transparent isolation structure and a non-transparent molding material, wherein the sensor chip is located on the substrate and electrically coupled to the substrate; the light-emitting device is located on the sensor chip and electrically coupled to the sensor chip; the non-transparent isolation structure is located on the sensor chip and isolates the light-emitting device from a sensor region of the sensor chip; and the non-transparent molding material at least partially covers the substrate, the sensor chip and the non-transparent isolation structure, such that a portion of the proximity sensor which is located right above the sensor region and the light-emitting device is not covered by the non-transparent molding material.

Abstract: The embodiments of the present disclosure provide a proximity sensor, an electronic apparatus and a method for manufacturing a proximity sensor. The proximity sensor comprises a sensor chip, a light-emitting device, a transparent molding material and a non-transparent molding material, wherein the sensor chip comprises a sensor region; the light-emitting device is located on the sensor chip and is electrically coupled to the sensor chip; the transparent molding material at least covers a light-emitting surface of the light-emitting device; and the non-transparent molding material isolates the transparent molding material from the sensor region.

Abstract: The embodiments of the present disclosure provide a proximity sensor, an electronic apparatus and a method for manufacturing a proximity sensor. The proximity sensor comprises a substrate, a sensor chip, a light-emitting device, a non-transparent isolation structure and a non-transparent molding material, wherein the sensor chip is located on the substrate and electrically coupled to the substrate; the light-emitting device is located on the sensor chip and electrically coupled to the sensor chip; the non-transparent isolation structure is located on the sensor chip and isolates the light-emitting device from a sensor region of the sensor chip; and the non-transparent molding material at least partially covers the substrate, the sensor chip and the non-transparent isolation structure, such that a portion of the proximity sensor which is located right above the sensor region and the light-emitting device is not covered by the non-transparent molding material.

Abstract: A process of forming optical sensors includes sealing an imaging portion of each of a plurality of optical sensors on a sensor wafer with a transparent material. The operation of sealing leaves a bonding portion of each of the optical sensors exposed. The process further includes cutting the wafer into a plurality of image sensor dies after sealing the optical sensors such that each image sensor die includes one of the optical sensors sealed with a corresponding portion of the transparent material.

Abstract: A proximity sensor includes a semiconductor die, a light emitting assembly, a redistribution layer, and an encapsulating layer. A surface of the semiconductor die includes a sensor area and contact pads. A lens is positioned over the sensor area of the semiconductor die. The light emitting assembly includes a light emitting device having a light emitting area, a lens positioned over the light emitting area, and contact pads that face the redistribution layer. A side of the redistribution layer includes contact pads. Electrical connectors place each of the contact pads of the semiconductor die in electrical communication with a respective one of the contact pads of the redistribution layer. The encapsulating layer is positioned on the redistribution layer and at least partially encapsulates the semiconductor die, the lens over the sensor area of the semiconductor die, and the light emitting assembly.

Abstract: The embodiments of the present disclosure relate to a semiconductor device and a manufacturing method therefor. The semiconductor device comprises: a die attachment pad; a stud bump located on the die attachment pad and in direct contact with the die attachment pad; a first die located on the stud bump and electrically coupled to the stud bump; and a conductive attachment material located between the die attachment pad and the first die.

Abstract: A proximity sensor is provided according to the embodiments of the present disclosure, comprising: a sensor chip; a light-emitting device; a substrate, the sensor chip and the light-emitting device being located on the substrate; a transparent molding material covering a light-emitting surface of the light-emitting device; and a non-transparent molding material separating the transparent molding material from the sensor chip.

Abstract: Embodiments of the present disclosure provide a semiconductor device, a semiconductor package, and a method for manufacturing a semiconductor device. The semiconductor device comprises: a semiconductor die; an electrical isolation layer formed on a surface of the semiconductor die; a substrate; and a non-conductive adhesive layer disposed between the electrical isolation layer and the substrate, so as to adhere the electrical isolation layer to the substrate.

Abstract: A method includes forming a molded panel that includes a number of integrated circuits, fan-out components and stiffeners embedded in an encapsulation material. A redistribution layer is formed over the integrated circuits and the fan-out components. The redistribution layer is electrically coupled to contacts of the integrated circuits. The molded panel is singulated to form electronic devices. Each electronic device each an integrated circuit that is separated from a fan-out component by a portion of the encapsulation material and a stiffener separated from the fan-out component by a second portion of the encapsulation material.

Abstract: An electronic device may include leads, an IC having first and second bond pads, and an encapsulation material adjacent the leads and the IC so the leads extend to a bottom surface of the encapsulation material defining first contact pads. The electronic device may include bond wires between the first bond pads and corresponding ones of the leads, and conductors extending from corresponding ones of the second bond pads to the bottom surface of the encapsulation material defining second contact pads.

Abstract: Embodiments of the present disclosure provide a semiconductor device, a semiconductor package, and a method for manufacturing a semiconductor device. The semiconductor device comprises: a semiconductor die; an electrical isolation layer formed on a surface of the semiconductor die; a substrate; and a non-conductive adhesive layer disposed between the electrical isolation layer and the substrate, so as to adhere the electrical isolation layer to the substrate.

Abstract: An electronic device may include leads, an IC having first and second bond pads, and an encapsulation material adjacent the leads and the IC so the leads extend to a bottom surface of the encapsulation material defining first contact pads. The electronic device may include bond wires between the first bond pads and corresponding ones of the leads, and conductors extending from corresponding ones of the second bond pads to the bottom surface of the encapsulation material defining second contact pads.

Abstract: An electronic device may include an integrated circuit (IC), electrically conductive connectors coupled to the IC, and a heat sink layer adjacent the IC and opposite the electrically conductive connectors. The electronic device may include an encapsulation material surrounding the IC and the electrically conductive connectors, a redistribution layer having electrically conductive traces coupled to the electrically conductive connectors, a stiffener between the heat sink layer and the redistribution layer, and a fan-out component between the heat sink layer and the redistribution layer and being in the encapsulation material.

Abstract: An image sensing device may include an interconnect layer, an image sensor IC coupled to the interconnect layer and having an image sensing surface, and an IR filter aligned with the image sensing surface opposite the interconnect layer. The image sensing device may include a flexible interconnect layer aligned with the interconnect layer and having a flexible substrate extending laterally outwardly from the interconnect layer, and electrically conductive traces on the flexible substrate. The image sensing device may also include solder bodies coupling the interconnect layer and the flexible interconnect layer and also defining a gap between the interconnect layer and the flexible interconnect layer.

Abstract: An image sensor device may include an interconnect layer, an image sensor IC adjacent the interconnect layer and having an image sensing surface, and a dielectric layer adjacent the image sensor IC and having an opening therein aligned with the image sensing surface. The image sensor device may also include an IR filter adjacent and aligned with the image sensing surface, and an encapsulation material adjacent the dielectric layer and laterally surrounding the IR filter.

Abstract: An image sensor device may include an interconnect layer having an opening extending therethrough, an image sensor IC within the opening and having an image sensing surface, and an IR filter aligned with the image sensing surface. The image sensor device may include an encapsulation material laterally surrounding the image sensor IC and filling the opening, and a flexible interconnect layer coupled to the interconnect layer opposite the image sensing surface.