Abstract: A semiconductor structure includes a semiconductor substrate, with first, second, and third field effect transistors (FETs) formed on the substrate. A gate of the first FET includes a gate electrode, a first work function metal (WFM) layered with a first interfacial layer (IL) and a first high-k dielectric (HK); a gate of the second FET includes the first WFM layered with a second IL, a second HK, and a first dipole material; and a gate of the third FET includes the first WFM layered with a third IL, a third HK, the first dipole material, and a second dipole material. The first FET does not include the first dipole material and does not include the second dipole material, and the second FET does not include the second dipole material.

Abstract: A compound (as represented by formula I) serving as an Src homology region 2-containing protein tyrosine phosphatase 2 (SHP2) inhibitor, as well as a pharmaceutical composition thereof, a preparation method therefor, and a use in treating an SHP2 mediation diseases. The compounds of formula I exerts an effect by means of participating in the regulation of multiple processes such as cell proliferation, apoptosis, migration, and angiogenesis.

Abstract: The invention relates to the technical field of highland first aid, and particularly discloses a field first-aid infusion device for frigid highland zones. The device comprises a storage box, comprising a heat preservation and pressurization device, a marrow cavity puncture needle, a heat preservation infusion tube, a power-assisted puncture tool, a power supply and a power line, the heat preservation and pressurization device is electrically connected with the power supply through the power line, the heat preservation and pressurization device comprises a heating sleeve, magic tape is fixed to the surfaces of the two ends of the heating sleeve, a control box is fixed to the middle of the outer surface of the heating sleeve, and the power line is inserted into the control box.

Abstract: Aspects of the subject disclosure may include, for example, a method in which a processing system analyzes data including a user profile and historical data relating to previous interactions between an automated agent and equipment of the user. The method also includes determining a desirable outcome of an interaction between the automated agent and the user equipment; constructing a model for generating an expected outcome of a step of the interaction; using the model to perform a simulation of a next step of the interaction by generating an expected outcome for each of a plurality of possible actions, resulting in a plurality of expected outcomes; and selecting a next action for the next step of the interaction. If the desirable outcome is not obtained, the system can refine the plurality of possible actions to perform a simulation of a subsequent step of the interaction. Other embodiments are disclosed.

Abstract: A method of forming patterned features on a substrate is provided. The method includes: positioning a first mask over a first portion of a substrate; directing radiation through the patterned area of the first mask at the first portion of the substrate to form a first patterned region on the substrate; positioning a second mask over a second portion of the substrate, the second mask including a first patterned area and a second patterned area, the first patterned area spaced apart from the second patterned area by an unpatterned area; directing radiation through the first patterned area of the second mask at a first part of the second portion of the substrate to form a second patterned region on the substrate; and directing radiation through the second patterned area of the second mask at a second part of the second portion of the substrate to form a third patterned region.

Abstract: An integrated circuit package including a die substrate having a first and second die surfaces, a die high voltage input power connection in the die substrate to receive a high voltage input power and transmit the high voltage input power to a high voltage power trace on the first die surface, a power converter module on the first die surface and electrically connected to the high voltage power trace to convert the high voltage input power to a low voltage output power, a low voltage power trace located on the first die surface and electrically connected to the power converter module to carry the low voltage output power to a circuit die on the first die surface. A method of manufacturing the integrated circuit package and a computer having one or more circuits that include the package is also disclosed.

Abstract: A semiconductor structure includes a semiconductor substrate, with first, second, and third field effect transistors (FETs) formed on the substrate. A gate of the first FET includes a gate electrode, a first work function metal (WFM) layered with a first interfacial layer (IL) and a first high-k dielectric (HK); a gate of the second FET includes the first WFM layered with a second IL, a second HK, and a first dipole material; and a gate of the third FET includes the first WFM layered with a third IL, a third HK, the first dipole material, and a second dipole material. The first FET does not include the first dipole material and does not include the second dipole material, and the second FET does not include the second dipole material.

Abstract: A semiconductor device including a first nanosheet device located on a substrate. The first nanosheet device includes a first plurality of nanosheets and each of the first plurality of nanosheets are surround by a first dipole. The first dipole has a first concentration of a first dipole material. A second nanosheet device located on the substrate. The second nanosheet device includes a second plurality of nanosheets and each of the second plurality of nanosheets are surround by a second dipole. The second dipole has a second concentration of a second dipole material. The first concentration and the second concentration are different.

Abstract: Disclosed are a data multiplexing transmission method, a base station, a terminal, and a storage medium. The method comprises: a base station sends service resource occupation information corresponding to a first terminal by means of a control channel, so that a second terminal performs data transmission processing on the basis of the service resource occupation information when detecting the service resource occupation information sent on the control channel. The method, base station, terminal, and storage medium provided by the present application provide a resource multiplexing solution, solve the problem of service resource conflicts between different users, and improve the utilization efficiency of uplink transmission resources.

Abstract: The present invention relates to a polymer composition comprising a polypropylene and glass fiber. The polymer composition according to the present invention has a white or light color and superior preservation of impact resistance.

Abstract: A method for forming a planarization layer is provided that can include depositing an organic planarization layer on a deposition surface using a spin on deposition method; and treating the deposited organic planarization layer with a solvent anneal. In some embodiments, a vapor of solvent is passed over the deposited organic planarization layer to increase uniformity of the deposited organic planarization layer. The method may further include curing the deposited organic planarization layer with a thermal anneal.

Abstract: Embodiments of the invention include a dielectric reflow technique for boundary control in which a first layer is deposited on a first transistor region and a second transistor region, the first and second transistor regions being adjacent. A dielectric layer is formed to protect the second transistor region such that the first transistor region is exposed, the dielectric layer bounded at a first location. In response to removing a portion of the first layer on the first transistor region, the dielectric layer protecting the second transistor region is reflowed such that at least a reflowed portion of the dielectric layer extends beyond the first location.

Abstract: The invention relates to the technical field of highland first aid, and particularly discloses a field first-aid infusion device for frigid highland zones. The device comprises a storage box, comprising a heat preservation and pressurization device, a marrow cavity puncture needle, a heat preservation infusion tube, a power-assisted puncture tool, a power supply and a power line, the heat preservation and pressurization device is electrically connected with the power supply through the power line, the heat preservation and pressurization device comprises a heating sleeve, magic tape is fixed to the surfaces of the two ends of the heating sleeve, a control box is fixed to the middle of the outer surface of the heating sleeve, and the power line is inserted into the control box.

Abstract: Personalized content delivery (e.g., using a computerized tool) is enabled. For example, a system can comprise: a processor and a memory that stores executable instructions that, when executed by the processor, facilitate performance of operations, comprising: determining a quality of service metric representative of a quality of service of streamed content delivered via a content delivery network, determining a quality of experience metric representative of a quality of experience associated with a user profile of a consumer of the streamed content, and based on the quality of service and the quality of experience, modifying the streamed content.

Abstract: A device includes a base layer structure including a first region and a second region; a first bottom gate material in a plurality of first-type doped regions in the first and second regions; a second bottom gate material in a second-type doped regions in the first and second regions; first nanosheet gate-all-round device structures on the first bottom gate material; and second nanosheet gate-all-round device structures on the second bottom gate material, wherein the first bottom gate material is located over the second nanosheet gate-all-around device structures in the second-type doped regions of the first and second regions, wherein the second bottom gate material extends, in boundary regions between the first-type and second-type doped regions, on the base layer structure from the second nanosheet gate-all-around devices structures toward the first gate-all-round device structures.

Abstract: The cloud cost-based resource deployment system and method includes a dynamic deployment strategy module, a resource life cycle management module, and an automatic resource operation and maintenance module. The dynamic deployment strategy module automatically analyzes and combines resource deployment schemes. The resource life cycle management module docks with Application Program Interface (API) of various public clouds, and internally provides standardized and unified interfaces. The automatic resource operation and maintenance module modifies the resources in real time through the public cloud API and a manner of remotely connecting to infrastructure resources. Unified and efficient management on a plurality of public clouds is performed. For cloud resources, deployment strategy can be automatically adjusted for different operation systems, so that the public clouds can be efficiently used with a low cost.

Abstract: Techniques for area scaling of contacts in VTFET devices are provided. In one aspect, a VTFET device includes: a fin(s); a bottom source/drain region at a base of the fin(s); a gate stack alongside the fin(s); a top source/drain region present at a top of the fin(s); a bottom source/drain contact to the bottom source/drain region; and a gate contact to the gate stack, wherein the bottom source drain and gate contacts each includes a top portion having a width W1CONTACT over a bottom portion having a width W2CONTACT, wherein W2CONTACT<W1CONTACT, and wherein a sidewall along the top portion is discontinuous with a sidewall along the bottom portion. The bottom portion having the width W2CONTACT is present alongside the gate stack and the top source/drain region. A method of forming a VTFET device is also provided.

Abstract: A semiconductor structure includes a semiconductor substrate, with first, second, and third field effect transistors (FETs) formed on the substrate. A gate of the first FET includes a gate electrode, a first work function metal (WFM) layered with a first interfacial layer (IL) and a first high-k dielectric (HK); a gate of the second FET includes the first WFM layered with a second IL, a second HK, and a first dipole material; and a gate of the third FET includes the first WFM layered with a third IL, a third HK, the first dipole material, and a second dipole material. The first FET does not include the first dipole material and does not include the second dipole material, and the second FET does not include the second dipole material.