Abstract: A semiconductor structure includes a semiconductor substrate, with first, second, and third field effect transistors (FETs) formed on the substrate. A gate of the first FET includes a gate electrode, a first work function metal (WFM) layered with a first interfacial layer (IL) and a first high-k dielectric (HK); a gate of the second FET includes the first WFM layered with a second IL, a second HK, and a first dipole material; and a gate of the third FET includes the first WFM layered with a third IL, a third HK, the first dipole material, and a second dipole material. The first FET does not include the first dipole material and does not include the second dipole material, and the second FET does not include the second dipole material.

Abstract: A semiconductor device including a first nanosheet device located on a substrate. The first nanosheet device includes a first plurality of nanosheets and each of the first plurality of nanosheets are surround by a first dipole. The first dipole has a first concentration of a first dipole material. A second nanosheet device located on the substrate. The second nanosheet device includes a second plurality of nanosheets and each of the second plurality of nanosheets are surround by a second dipole. The second dipole has a second concentration of a second dipole material. The first concentration and the second concentration are different.

Abstract: Disclosed are a data multiplexing transmission method, a base station, a terminal, and a storage medium. The method comprises: a base station sends service resource occupation information corresponding to a first terminal by means of a control channel, so that a second terminal performs data transmission processing on the basis of the service resource occupation information when detecting the service resource occupation information sent on the control channel. The method, base station, terminal, and storage medium provided by the present application provide a resource multiplexing solution, solve the problem of service resource conflicts between different users, and improve the utilization efficiency of uplink transmission resources.

Abstract: The present invention relates to a polymer composition comprising a polypropylene and glass fiber. The polymer composition according to the present invention has a white or light color and superior preservation of impact resistance.

Abstract: A method for forming a planarization layer is provided that can include depositing an organic planarization layer on a deposition surface using a spin on deposition method; and treating the deposited organic planarization layer with a solvent anneal. In some embodiments, a vapor of solvent is passed over the deposited organic planarization layer to increase uniformity of the deposited organic planarization layer. The method may further include curing the deposited organic planarization layer with a thermal anneal.

Abstract: Embodiments of the invention include a dielectric reflow technique for boundary control in which a first layer is deposited on a first transistor region and a second transistor region, the first and second transistor regions being adjacent. A dielectric layer is formed to protect the second transistor region such that the first transistor region is exposed, the dielectric layer bounded at a first location. In response to removing a portion of the first layer on the first transistor region, the dielectric layer protecting the second transistor region is reflowed such that at least a reflowed portion of the dielectric layer extends beyond the first location.

Abstract: The invention relates to the technical field of highland first aid, and particularly discloses a field first-aid infusion device for frigid highland zones. The device comprises a storage box, comprising a heat preservation and pressurization device, a marrow cavity puncture needle, a heat preservation infusion tube, a power-assisted puncture tool, a power supply and a power line, the heat preservation and pressurization device is electrically connected with the power supply through the power line, the heat preservation and pressurization device comprises a heating sleeve, magic tape is fixed to the surfaces of the two ends of the heating sleeve, a control box is fixed to the middle of the outer surface of the heating sleeve, and the power line is inserted into the control box.

Abstract: Personalized content delivery (e.g., using a computerized tool) is enabled. For example, a system can comprise: a processor and a memory that stores executable instructions that, when executed by the processor, facilitate performance of operations, comprising: determining a quality of service metric representative of a quality of service of streamed content delivered via a content delivery network, determining a quality of experience metric representative of a quality of experience associated with a user profile of a consumer of the streamed content, and based on the quality of service and the quality of experience, modifying the streamed content.

Abstract: A device includes a base layer structure including a first region and a second region; a first bottom gate material in a plurality of first-type doped regions in the first and second regions; a second bottom gate material in a second-type doped regions in the first and second regions; first nanosheet gate-all-round device structures on the first bottom gate material; and second nanosheet gate-all-round device structures on the second bottom gate material, wherein the first bottom gate material is located over the second nanosheet gate-all-around device structures in the second-type doped regions of the first and second regions, wherein the second bottom gate material extends, in boundary regions between the first-type and second-type doped regions, on the base layer structure from the second nanosheet gate-all-around devices structures toward the first gate-all-round device structures.

Abstract: The cloud cost-based resource deployment system and method includes a dynamic deployment strategy module, a resource life cycle management module, and an automatic resource operation and maintenance module. The dynamic deployment strategy module automatically analyzes and combines resource deployment schemes. The resource life cycle management module docks with Application Program Interface (API) of various public clouds, and internally provides standardized and unified interfaces. The automatic resource operation and maintenance module modifies the resources in real time through the public cloud API and a manner of remotely connecting to infrastructure resources. Unified and efficient management on a plurality of public clouds is performed. For cloud resources, deployment strategy can be automatically adjusted for different operation systems, so that the public clouds can be efficiently used with a low cost.

Abstract: Techniques for area scaling of contacts in VTFET devices are provided. In one aspect, a VTFET device includes: a fin(s); a bottom source/drain region at a base of the fin(s); a gate stack alongside the fin(s); a top source/drain region present at a top of the fin(s); a bottom source/drain contact to the bottom source/drain region; and a gate contact to the gate stack, wherein the bottom source drain and gate contacts each includes a top portion having a width W1CONTACT over a bottom portion having a width W2CONTACT, wherein W2CONTACT<W1CONTACT, and wherein a sidewall along the top portion is discontinuous with a sidewall along the bottom portion. The bottom portion having the width W2CONTACT is present alongside the gate stack and the top source/drain region. A method of forming a VTFET device is also provided.

Abstract: A semiconductor structure includes a semiconductor substrate, with first, second, and third field effect transistors (FETs) formed on the substrate. A gate of the first FET includes a gate electrode, a first work function metal (WFM) layered with a first interfacial layer (IL) and a first high-k dielectric (HK); a gate of the second FET includes the first WFM layered with a second IL, a second HK, and a first dipole material; and a gate of the third FET includes the first WFM layered with a third IL, a third HK, the first dipole material, and a second dipole material. The first FET does not include the first dipole material and does not include the second dipole material, and the second FET does not include the second dipole material.

Abstract: A semiconductor device is provided. The semiconductor device includes a bottom epitaxial layer, a gate stack formed over the bottom epitaxial layer, the gate stack including a work function metal (WFM) layer, a channel fin formed on the bottom epitaxial layer, a first interlayer dielectric (ILD) layer formed in a gate landing area over the gate stack, a second ILD layer formed in an area other than the gate landing area, and a WFM encapsulation layer formed between the first ILD layer and the second ILD layer, and formed on sidewalls of the gate stack.

Abstract: A method for detecting abnormal network data includes performing feature extraction on a network data packet according to each of plural protocol types, and generating a corresponding data packet fingerprint set. The data packet fingerprint set includes one or more data packet fingerprints, each of the one or more data packet fingerprints corresponding to one of the plural protocol types. The method further includes matching at least one data packet fingerprint in the data packet fingerprint set and a reference data packet fingerprint in a reference data packet fingerprint library, and calculating a confidence corresponding to the network data packet based on confidence correlation information corresponding to each of the at least one matched data packet fingerprint. The method also includes obtaining a reference confidence, and determining an abnormality detection result of the network data packet based on the reference confidence and the calculated confidence.

Abstract: In one aspect, antibodies that specifically bind to a human alpha-synuclein protein are provided. In some embodiments, an anti-alpha-synuclein antibody binds to monomeric human alpha-synuclein protein, oligomeric human alpha-synuclein protein, soluble human alpha-synuclein protein, human alpha-synuclein protein fibrils, and human alpha-synuclein protein that is phosphorylated at Ser129 (pSer129) with high affinity. In some embodiments, an anti-alpha-synuclein antibody can specifically bind to or immunodeplete alpha-synuclein protein. In some embodiments, an anti-alpha-synuclein antibody can prevent or inhibit alpha-synuclein seeding.

Abstract: A method of optimizing the scheduling of storage resource for a server used in cloud computing obtains a first input/output operations per seconds (IOPS) value of a virtual disk in an instance. A warning message is generated when the first IOPS value is larger than a predefined threshold value, which represents an overloaded state of the virtual disk. An predicted IOPS value is obtained and the predicted IOPS value is set as the maximum IOPS value for limiting the IOPS value of the virtual disk, thus other virtual disks are not affected by a virtual disk being overloaded, and storing efficiency of the server is improved. A server and a computer readable storage medium applying the method are also disclosed.

Abstract: Methods are presented for forming multi-threshold field effect transistors. The methods generally include depositing and patterning an organic planarizing layer to protect underlying structures formed in a selected one of the nFET region and the pFET region of a semiconductor wafer. In the other one of the nFET region and the pFET region, structures are processed to form an undercut in the organic planarizing layer. The organic planarizing layer is subjected to a reflow process to fill the undercut. The methods are effective to protect a boundary between the nFET region and the pFET region.