Abstract: Burst throttling methods may be used to manage computing resources of a data storage service. Tokens may represent I/O operations executed by a customer of the data storage service. A first token bucket may contain a set of tokens representing the overall I/O operation capacity of the data storage service. Additionally, a second token bucket may contain a set of tokens for a given logical volume maintained by the data storage service. When I/O requests are received tokens may be charged the first token bucket and the second token bucket. Furthermore, if there is sufficient capacity, the data storage service may charge a reduced number of tokens to the third token bucket.

Abstract: Provided are a target region enrichment method based on multiplex PCR, and a reagent, the method comprising: connecting a first linker and a second linker respectively at two ends of a nucleic acid segment containing target regions to be enriched so as to obtain a linker-connected product; performing a PCR amplification on the linker-connected product using a first primer specifically bound to the first linker and a second primer specifically bound to the second linker to obtain an amplified product, the first primer or the second primer having a first affinity label; capturing a single strand having the first affinity label in the amplified product using a solid phase carrier; performing single primer linear amplification using a third primer with the captured single strand as a template; performing exponential amplification using the third primer and the first primer, with the linearly amplified product as the template, to obtain a product containing the target regions.

Abstract: Embodiments of this application provide an upload interface identification method performed at an identification server. The identification server obtains a to-be-identified request packet that is contained in request packets from a page client to a page server. After parsing a content feature of the to-be-identified request packet, the server determines whether the content feature corresponds to a predefined content feature of an upload request packet authorized by the page server. The server then determines that an interface address indicated by the upload request packet corresponds to an upload interface of the to-be-identified request packet if the content feature corresponds to the set content feature of the upload request packet.

Abstract: Embodiments of the present invention are directed to the wet stripping of an organic planarization layer (OPL) using reversible UV crosslinking and de-crosslinking. In a non-limiting embodiment of the invention, an interlayer dielectric is formed over a substrate. A trench is formed in the interlayer dielectric. A work function metal is formed over the interlayer dielectric such that a portion of the work function metal partially fills the trench. A UV sensitive OPL is formed over the work function metal such that a portion of the UV sensitive OPL fills the trench. The UV sensitive OPL can be crosslinked by applying light at a first UV frequency and de-crosslinked by applying light at a second UV frequency.

Abstract: The present disclosure encompasses compositions and methods for effectively treating at least one symptom or sign of A plaque or cerebral amyloid angiopathy (CAA) associated symptoms, or for decreasing amyloid plaque load or CAA load. The method comprises administering an effective amount of an anti-ApoE antibody to a mammalian subject, such as to a human.

Abstract: Embodiments of the present invention are directed to the wet stripping of an organic planarization layer (OPL) using reversible UV crosslinking and de-crosslinking. In a non-limiting embodiment of the invention, an interlayer dielectric is formed over a substrate. A trench is formed in the interlayer dielectric. A work function metal is formed over the interlayer dielectric such that a portion of the work function metal partially fills the trench. A UV sensitive OPL is formed over the work function metal such that a portion of the UV sensitive OPL fills the trench. The UV sensitive OPL can be crosslinked by applying light at a first UV frequency and de-crosslinked by applying light at a second UV frequency.

Abstract: Burst throttling methods may be used to manage computing resources of a data storage service. Tokens may represent I/O operations executed by a customer of the data storage service. A first token bucket may contain a set of tokens representing the overall I/O operation capacity of the data storage service. Additionally, a second token bucket may contain a set of tokens for a given logical volume maintained by the data storage service. When I/O requests are received tokens may be charged the first token bucket and the second token bucket. Furthermore, if there is sufficient capacity, the data storage service may charge a reduced number of tokens to the third token bucket.

Abstract: Embodiments of the present invention are directed to the wet stripping of an organic planarization layer (OPL) using reversible UV crosslinking and de-crosslinking. In a non-limiting embodiment of the invention, an interlayer dielectric is formed over a substrate. A trench is formed in the interlayer dielectric. A work function metal is formed over the interlayer dielectric such that a portion of the work function metal partially fills the trench. A UV sensitive OPL is formed over the work function metal such that a portion of the UV sensitive OPL fills the trench. The UV sensitive OPL can be crosslinked by applying light at a first UV frequency and de-crosslinked by applying light at a second UV frequency.

Abstract: A semiconductor structure comprises a semiconductor substrate, an N-type stacked nanosheet channel structure formed on the semiconductor substrate, and a P-type stacked nanosheet channel structure formed adjacent to the N-type stacked nanosheet channel structure on the semiconductor substrate. Each of the adjacent N-type and P-type stacked nanosheet channel structures comprises a plurality of stacked channel regions with each such channel region being substantially surrounded by a gate dielectric layer and a gate work function metal layer, and with the gate work function metal layer being separated from the channel regions by the gate dielectric layer. The gate dielectric and gate work function metal layers of the adjacent N-type and P-type stacked nanosheet channel structures are substantially eliminated from a shared gate region between the adjacent N-type and P-type stacked nanosheet channel structures.

Abstract: A lithographic patterning method includes forming a multi-layer patterning material film stack on a semiconductor substrate. Forming the patterning material film stack more particularly includes forming a hard mask layer and forming a resist layer over the hard mask layer. The hard mask layer is configured to support selective deposition of a metal-containing layer on the resist layer, the selective deposition of the metal-containing layer on the resist layer occurring after pattern development. The method further includes exposing the multi-layer patterning material film stack to patterning radiation to form a desired pattern in the resist layer, developing the pattern formed in the resist layer, and selectively depositing the metal-containing layer on the developed pattern in the resist layer. The selective deposition avoids deposition of the metal-containing layer on portions of the hard mask layer corresponding to respective openings in the resist layer.

Abstract: An EUV lithographic structure and methods according to embodiments of the invention includes an EUV photosensitive resist layer disposed directly on an oxide hardmask layer, wherein the oxide hardmask layer is doped with dopant ions to form a doped oxide hardmask layer so as to improve adhesion between the EUV lithographic structure and the oxide hardmask. The EUV lithographic structure is free of a separate adhesion layer.

Abstract: A dataset regarding a plurality of applications is obtained. A set of parameters is determined from the dataset, comprising at least a sample performance trajectory, a risk factor, and a performance outcome. A maximum likelihood of each performance outcome is determined using a likelihood function, the likelihood function being a mixture model of a trajectory model and an outcome model. The set of parameters is updated according to the maximum likelihood of each performance outcome. A performance trajectory model is built according to the updated set of parameters. The plurality of applications is then grouped into subgroups according to the performance trajectory model, each subgroup containing one or more applications, and each of the one or more applications in a given subgroup having a same or similar trajectory to each other. An alert associated with the applications in at least one of subgroups may be generated.

Abstract: Techniques for identifying representative patients from a patient group are provided. Based on an outcome of interest, one or more patients can be grouped according to phenotyping features associated with the outcome of interest. Additionally, in response to grouping the one or more patients, a representative patient of the one or more patients can be determined based on values associated with the phenotyping features.

Abstract: Techniques are provided for training and/or executing, by a system operatively coupled to a processor, a modified random forest model using a process that employs significance of data fields in performing imputation, filtering data records out of sample datasets for generating subtrees, and filtering out subtrees for making predictions.

Abstract: A method and system of imputing corrupted sequential data is provided. A plurality of input data vectors of a sequential data is received. For each input data vector of the sequential data, the input data vector is corrupted. The corrupted input data vector is mapped to a staging hidden layer to create a staging vector. The input data vector is reconstructed based on the staging vector, to provide an output data vector. adjusted parameter of the staging hidden layer is iteratively trained until it is within a predetermined tolerance of a loss function. A next input data vector of the sequential data is predicted based on the staging vector. The predicted next input data vector is stored.

Abstract: A method of forming a semiconductor structure includes forming first and second stacked nanosheet channel structures on a semiconductor substrate, with each nanosheet channel structure including a plurality of stacked channel regions interspersed with sacrificial regions. In a resulting semiconductor structure, an N-type stacked nanosheet channel structure is formed on the semiconductor substrate, and a P-type stacked nanosheet channel structure is formed adjacent to the N-type stacked nanosheet channel structure on the semiconductor substrate. Each of the adjacent N-type and P-type stacked nanosheet channel structures includes a plurality of stacked channel regions with each such channel region being substantially surrounded by a gate dielectric layer and a gate work function metal layer.

Abstract: A natural language recognizing apparatus including an input device, a processing device and a storage device is provided. The input device is configured to provide a natural language data. The storage device is configured to store a plurality of program modules. The program modules include a grammar analysis module. The processing device executes the grammar analysis module to analyze the natural language data through a formal grammar model, and generate a plurality of string data. When at least one of the string data conforms to a preset grammar condition, the processing device judges the at least one of the string data is an intention data, and the processing device outputs a corresponding response signal according to the intention data. In addition, a natural language recognizing method is also provided.

Abstract: Embodiments of the present invention provide systems and methods for trapping amines. This in turn mitigates the undesired scumming and footing effects in a photoresist. The polymer brush is grafted onto a silicon nitride surface. The functional groups and molecular weight of the polymer brush provide protons and impose steric hindrance, respectively, to trap amines diffusing from a silicon nitride surface.

Abstract: A high-precision manufacturing machine used in precision manufacturing processes, such as a 3-D printer, is described. The machine has a frame, a movable platform supported by and movable relative to the frame, on which are mounted one or more platform tool holders for holding one or more tools such as an extruder, a base station that may include one or more bays, each of the bays having a number of base station tool holders, for storing tools that are not in use, and a supporting base, which may be movable relative to the frame, for holding one or more work items to be processed by the tool or tools selected and held by the movable platform.

Abstract: An edible composition comprising starch and cellulose ether particles, wherein at least 10 volume percent of the cellulose ether particles have a particle length LEFI of less than 40 micrometers, is useful for preparing a batter by mixing the edible composition with water. The batter is contacted with a food to prepare a battered food. The battered foods have a reduced oil and/or fat uptake when fried, as compared to fried non-battered food.