Patents by Inventor Jing Wan

Jing Wan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11080838
    Abstract: An image analysis (“IA”) computer system for analyzing images of hail damage includes at least one processor in communication with at least one memory device. The at least one processor is programmed to: (i) store a damage prediction model associated with a rooftop, wherein the damage prediction model utilizes an artificial intelligence algorithm; (ii) display, to a user, an image of a rooftop; (iii) receive, from the user, a request to analyze damage to the rooftop; (iv) apply, by the at least one processor, the damage prediction model to the image, the damage prediction model outputting a plurality of damage prediction locations of the rooftop in relation to the image; and/or (v) display, by the at least one processor, an overlay box at each of the plurality of damage prediction locations, the overlay box being a virtual object overlaid onto the image for labeling the damage prediction locations.
    Type: Grant
    Filed: August 8, 2019
    Date of Patent: August 3, 2021
    Assignee: STATE FARM MUTUAL AUTOMOBILE INSURANCE COMPANY
    Inventors: Yuntao Li, Charlie Isaksson, Marigona Bokshi-Drotar, Jing Wan
  • Publication number: 20210108431
    Abstract: An air passageway system (100) includes an annular air delivery passageway (132), a linear air delivery passageway (112b), and one or more air injection passageways (134a-1341, 116). The annular air delivery passageway (132), the linear air delivery passageway (112b), and the one or more air injection passageways (134a-1341, 116) are constructed from flexible polyvinyl chloride walls.
    Type: Application
    Filed: January 31, 2018
    Publication date: April 15, 2021
    Inventors: Shuiyong HUANG, Roger ZHANG, Xingdi WU, Jing WAN
  • Patent number: 10977490
    Abstract: Systems and methods for analyzing image data to assess property damage are disclosed. According to certain aspects, a server may analyze segmented digital image data of a roof of a property using a convolutional neural network (CNN). The server may extract a set of features from a set of regions output by the CNN. Additionally, the server may analyze the set of features using an additional image model to generate a set of outputs indicative of a confidence level that actual hail damage is depicted in the set of regions.
    Type: Grant
    Filed: October 30, 2018
    Date of Patent: April 13, 2021
    Assignee: State Farm Mutual Automobile Insurance Company
    Inventors: Marigona Bokshi-Drotar, Jing Wan, Sandra Kane, Yuntao Li
  • Patent number: 10824535
    Abstract: A computer-implemented method for determining features of a dataset that are indicative of anomalous behavior of one or more computers in a large group of computers comprises (1) receiving log files including a plurality of entries of data regarding connections between a plurality of computers belonging to an organization and a plurality of websites outside the organization, each entry being associated with the actions of one computer, (2) executing a time series decomposition algorithm on a portion of the features of the data to generate a first list of features, (3) implementing a plurality of traffic dispersion graphs to generate a second list of features, and (4) implementing an autoencoder and a random forest regressor to generate a third list of features.
    Type: Grant
    Filed: February 4, 2019
    Date of Patent: November 3, 2020
    Assignee: State Farm Mutual Automobile Insurance Company
    Inventors: Rajiv Shah, Shannon Morrison, Jeremy Cunningham, Taylor Smith, Sripriya Sundararaman, Jing Wan, Jeffrey Hevrin, Ronald Duehr, Brad Sliz, Lucas Allen
  • Patent number: 10709708
    Abstract: The invention provides combinations comprising a MERTK inhibitor, or a pharmaceutically acceptable salt thereof, and an EGFR inhibitor and methods of use thereof, including methods of treating disorders such as cancer.
    Type: Grant
    Filed: March 17, 2017
    Date of Patent: July 14, 2020
    Assignees: The University of North Carolina at Chapel Hill, Emory University
    Inventors: Dan Yan, H. Shelton Earp, III, Deborah Ann DeRyckere, Douglas Kim Graham, Jing Wan
  • Patent number: 10652257
    Abstract: A computer-implemented method for detecting anomalous behavior of one or more computers in a large group of computers comprises (1) receiving log files including a plurality of entries of data regarding connections between a plurality of computers belonging to an organization and a plurality of websites outside the organization, each entry being associated with the actions of one computer, (2) applying a first plurality of algorithms to determine features of the data which may contribute to anomalous behavior of the computers, and (3) applying a second plurality of algorithms to determine which computers are behaving anomalously based upon the features.
    Type: Grant
    Filed: July 7, 2017
    Date of Patent: May 12, 2020
    Assignee: State Farm Mutual Automobile Insurance Company
    Inventors: Rajiv Shah, Shannon Morrison, Jeremy Cunningham, Taylor Smith, Sripriya Sundararaman, Jing Wan, Jeffrey Hevrin, Ronald Duehr, Brad Sliz, Lucas Allen
  • Publication number: 20200060481
    Abstract: A spa (100) with built-in seating is disclosed. The spa (100) includes a pool body (10) partially enclosing a water cavity (11), and a seating assembly (20). The seating assembly (20) includes an inflatable bench (23) attached to a floor of the pool body (10), and an inflatable backrest (25) attached to the inflatable bench (23) by at least one attachment assembly (31) having an adjustable length such that a user can adjust a position of the inflatable backrest (25) relative to the inflatable bench (23).
    Type: Application
    Filed: May 4, 2017
    Publication date: February 27, 2020
    Inventors: Shuiyong Huang, Jing Wan
  • Patent number: 10248533
    Abstract: A computer-implemented method for determining features of a dataset that are indicative of anomalous behavior of one or more computers in a large group of computers comprises (1) receiving log files including a plurality of entries of data regarding connections between a plurality of computers belonging to an organization and a plurality of websites outside the organization, each entry being associated with the actions of one computer, (2) executing a time series decomposition algorithm on a portion of the features of the data to generate a first list of features, (3) implementing a plurality of traffic dispersion graphs to generate a second list of features, and (4) implementing an autoencoder and a random forest regressor to generate a third list of features.
    Type: Grant
    Filed: July 7, 2017
    Date of Patent: April 2, 2019
    Assignee: State Farm Mutual Automobile Insurance Company
    Inventors: Rajiv Shah, Shannon Morrison, Jeremy Cunningham, Taylor Smith, Sripriya Sundararaman, Jing Wan, Jeffrey Hevrin, Ronald Duehr, Brad Sliz, Lucas Allen
  • Publication number: 20180286967
    Abstract: A method of forming self-aligned STI regions extending over portions of a Si substrate to enable the subsequent formation of epitaxially grown embedded S/D regions without using a lithography mask and the resulting device are provided. Embodiments include forming a STI etch mask with laterally separated openings over a Si substrate; forming shallow trenches into the Si substrate through the openings; forming first through fourth oxide spacers on opposite sidewalls of the shallow trenches and the openings; forming a deep STI trench between the first and second oxide spacers and between the third and fourth oxide spacers down into the Si substrate; forming a STI oxide layer over the first through fourth oxide spacers and a portion of the STI etch mask, the STI oxide layer filling the deep STI trenches; and planarizing the STI oxide layer down to the portion of the STI etch mask.
    Type: Application
    Filed: June 4, 2018
    Publication date: October 4, 2018
    Inventors: Jing WAN, Jer-Hueih(James) CHEN, Cuiqin XU, Padmaja NAGAIAH
  • Patent number: 10082000
    Abstract: A zonal isolation apparatus for an open-hole wellbore completed with a gravel pack having sections of blank pipe intermediate selected sections of sand screen, comprising a blank liner, with a first packer and second packer disposed therein. The first and second packers are set adjacent to sections of blank pipe and seal an annular area formed between the blank liner and the surrounding sections of sand screen at the first and second sections of blank pipe. The flow of fluids into the wellbore intermediate the first and second sections of blank pipe is inhibited.
    Type: Grant
    Filed: November 18, 2013
    Date of Patent: September 25, 2018
    Assignee: ExxonMobil Upstream Research Company
    Inventors: Marcel A. Grubert, David E. Courtnage, Jing Wan
  • Patent number: 10048162
    Abstract: A testing device and a testing method for an optical film are disclosed. The testing device includes a carrier having a cavity, wherein the cavity is an enclosed space; a test condition providing module disposed in the enclosed space; wherein the optical film is disposed in the enclosed space and the test condition providing module is configured for providing a test condition simulating a real environment in a liquid crystal display module for the optical film. The testing device for an optical film is configured for testing the optical film to be tested.
    Type: Grant
    Filed: May 13, 2016
    Date of Patent: August 14, 2018
    Assignees: BOE Technology Group Co., Ltd., Hefei Xinsheng Optoelectronics Technology Co., Ltd.
    Inventors: Yiqiang Jiang, Qinglong Meng, Zhiyu Qian, Yanping Li, Linlin Wang, Jing Wan
  • Patent number: 10020383
    Abstract: A method of forming self-aligned STI regions extending over portions of a Si substrate to enable the subsequent formation of epitaxially grown embedded S/D regions without using a lithography mask and the resulting device are provided. Embodiments include forming a STI etch mask with laterally separated openings over a Si substrate; forming shallow trenches into the Si substrate through the openings; forming first through fourth oxide spacers on opposite sidewalls of the shallow trenches and the openings; forming a deep STI trench between the first and second oxide spacers and between the third and fourth oxide spacers down into the Si substrate; forming a STI oxide layer over the first through fourth oxide spacers and a portion of the STI etch mask, the STI oxide layer filling the deep STI trenches; and planarizing the STI oxide layer down to the portion of the STI etch mask.
    Type: Grant
    Filed: May 20, 2015
    Date of Patent: July 10, 2018
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Jing Wan, Jer-Hueih(James) Chen, Cuiqin Xu, Padmaja Nagaiah
  • Publication number: 20170266188
    Abstract: The invention provides combinations comprising a MERTK inhibitor, or a pharmaceutically acceptable salt thereof, and an EGFR inhibitor and methods of use thereof, including methods of treating disorders such as cancer.
    Type: Application
    Filed: March 17, 2017
    Publication date: September 21, 2017
    Inventors: Dan Yan, H. Shelton Earp, III, Deborah Ann DeRyckere, Douglas Kim Graham, Jing Wan
  • Publication number: 20170162688
    Abstract: Embodiments of the present invention provide a metal gate structure and method of formation. In the replacement metal gate (RMG) process flow, the gate cut process is performed after the metal gate is formed. This allows for a reduced margin between the end of the gate and an adjacent fin. It enables a thinner sacrificial layer on top of the dummy gate, since the gate cut step is deferred. The thinner sacrificial layer improves device quality by reducing the adverse effect of shadowing during implantation. Furthermore, in this process flow, the work function metal layer is terminated along the semiconductor substrate by a capping layer, which reduces undesirable shifts in threshold voltage that occurred in prior methods and structures.
    Type: Application
    Filed: February 15, 2017
    Publication date: June 8, 2017
    Applicant: GLOBALFOUNDRIES INC.
    Inventors: Andy Chih-Hung Wei, Dae G. Yang, Mariappan Hariharaputhiran, Jing Wan
  • Patent number: 9640625
    Abstract: Provided are approaches for forming gate and source/drain (S/D) contacts. Specifically, a gate contact opening is formed over at least one of a set of gate structures, a set of S/D contact openings is formed over fins of the semiconductor device, and a metal material is deposited over the semiconductor device to form a gate contact within the gate contact opening and a set of S/D contacts within the set of S/D contact openings. In one approach, nitride remains between the gate contact and at least one of the S/D contacts. In another approach, the device includes merged gate and S/D contacts. This approach provides selective etching to partition areas where oxide will be further removed selectively to nitride to create cavities to metallize and create contact to the S/D, while isolation areas between contact areas are enclosed in nitride and do not get removed during the oxide etch.
    Type: Grant
    Filed: April 25, 2014
    Date of Patent: May 2, 2017
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Guillaume Bouche, Andy Chih-Hung Wei, Gabriel Padron Wells, Andre P. Labonte, Jing Wan
  • Patent number: 9608086
    Abstract: Embodiments of the present invention provide a metal gate structure and method of formation. In the replacement metal gate (RMG) process flow, the gate cut process is performed after the metal gate is formed. This allows for a reduced margin between the end of the gate and an adjacent fin. It enables a thinner sacrificial layer on top of the dummy gate, since the gate cut step is deferred. The thinner sacrificial layer improves device quality by reducing the adverse effect of shadowing during implantation. Furthermore, in this process flow, the work function metal layer is terminated along the semiconductor substrate by a capping layer, which reduces undesirable shifts in threshold voltage that occurred in prior methods and structures.
    Type: Grant
    Filed: May 20, 2014
    Date of Patent: March 28, 2017
    Assignee: GLOBAL FOUNDRIES INC.
    Inventors: Andy Chih-Hung Wei, Dae G. Yang, Mariappan Hariharaputhiran, Jing Wan
  • Publication number: 20160343607
    Abstract: A method of forming self-aligned STI regions extending over portions of a Si substrate to enable the subsequent formation of epitaxially grown embedded S/D regions without using a lithography mask and the resulting device are provided. Embodiments include forming a STI etch mask with laterally separated openings over a Si substrate; forming shallow trenches into the Si substrate through the openings; forming first through fourth oxide spacers on opposite sidewalls of the shallow trenches and the openings; forming a deep STI trench between the first and second oxide spacers and between the third and fourth oxide spacers down into the Si substrate; forming a STI oxide layer over the first through fourth oxide spacers and a portion of the STI etch mask, the STI oxide layer filling the deep STI trenches; and planarizing the STI oxide layer down to the portion of the STI etch mask.
    Type: Application
    Filed: May 20, 2015
    Publication date: November 24, 2016
    Inventors: Jing WAN, Jer-Hueih(James) CHEN, Cuiqin XU, Padmaja NAGAIAH
  • Publication number: 20160334654
    Abstract: A testing device and a testing method for an optical film are disclosed. The testing device includes a carrier having a cavity, wherein the cavity is an enclosed space; a test condition providing module disposed in the enclosed space; wherein the optical film is disposed in the enclosed space and the test condition providing module is configured for providing a test condition simulating a real environment in a liquid crystal display module for the optical film. The testing device for an optical film is configured for testing the optical film to be tested.
    Type: Application
    Filed: May 13, 2016
    Publication date: November 17, 2016
    Inventors: Yiqiang Jiang, Qinglong Meng, Zhiyu Qian, Yanping Li, Linlin Wang, Jing Wan
  • Patent number: 9490340
    Abstract: A method of forming a nanowire device includes patterning a plurality of semiconductor material layers such that each layer has first and second exposed end surfaces. The method further includes forming doped extension regions in the first and second exposed end surfaces of the semiconductor material layers. The method further includes, after forming the doped extension regions, forming epi semiconductor material in source and drain regions of the device.
    Type: Grant
    Filed: June 18, 2014
    Date of Patent: November 8, 2016
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Shao-Ming Koh, Guillaume Bouche, Jing Wan, Andy C. Wei
  • Patent number: 9431512
    Abstract: A method of forming a nanowire device includes forming semiconductor material layers above a semiconductor substrate, forming a gate structure above the semiconductor material layers, forming a first sidewall spacer adjacent to the gate structure and forming a second sidewall spacer adjacent to the first sidewall spacer. The method further includes patterning the semiconductor material layers such that each layer has first and second exposed end surfaces. The gate structure, the first sidewall spacer, and the second sidewall spacer are used in combination as an etch mask during the patterning process. The method further includes removing the first and second sidewall spacers, thereby exposing at least a portion of the patterned semiconductor material layers. The method further includes forming doped extension regions in at least the exposed portions of the patterned semiconductor material layers after removing the first and second sidewall spacers.
    Type: Grant
    Filed: June 18, 2014
    Date of Patent: August 30, 2016
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Shao-Ming Koh, Guillaume Bouche, Jing Wan, Andy C. Wei