Patents by Inventor Jinn-Kong Sheu
Jinn-Kong Sheu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20080274573Abstract: Green light emitting diodes (LED) of gallium arsenide (GaAs) are series-connected. The series connection has a small transmission attenuation and a wide bandwidth. The GaAs LED has a big forward bias and so neither extra driving current nor complex resonant-cavity epitaxy layer is needed. Hence, the present invention has a high velocity, a high efficiency and a high power while an uneven current distribution is avoided.Type: ApplicationFiled: November 16, 2007Publication date: November 6, 2008Applicant: National Central UniversityInventors: Jin-Wei Shi, Jinn-Kong Sheu, Mao-Jen Wu, Chun-Kai Wang, C.-H. Chen, Jen-Inn Chyi
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Publication number: 20080197422Abstract: A planar combined structure of a bipolar junction transistor (BJT) and n-type/p-type metal semiconductor field-effect transistors (MESFETs) and a method for forming the structure. The n-type GaN MESFET is formed at the same time when an inversion region (an emitter region) of the GaN BJT is formed by an ion implantation or impurity diffusion method by using a particular mask design, while a p-type GaN region is at the same time is formed as the p-type GaN MESFET. Namely, the n-type channel of the n-type MESFET is formed by the ion implantation or impurity diffusion method when the BJT is formed with the same ion implantation or impurity diffusion method performed, while a region of the p-type GaN without being subject to the ion implantation or impurity diffusion method is formed as the p-type MESFET. As such, the BJT is formed currently with the n-type/p-type MESFETs on the same GaN crystal growth layer as a planar structure.Type: ApplicationFiled: February 20, 2007Publication date: August 21, 2008Applicant: National Central UniversityInventors: Yue-Ming Hsin, Jinn-Kong Sheu, Kuang-Po Hsueh
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Patent number: 7358173Abstract: A bumping process for a light emitting diode (LED) chip is provided. Firstly, a LED chip with a plurality of electrodes is provided, then a pattern plate having a plurality of openings is disposed on the LED chip, and the electrodes are correspondingly exposed by the openings. Then, a plurality of posts can be formed over the exposed electrodes by printing. After the printing process, the pattern plate is lifted and a reflow process is performed to the posts. The posts are formed by a printing process, the bumping process is less time-consuming and with lower costs and the height and the composition of the bumps con be precisely controlled, thus improving the reliability of LED die package structures.Type: GrantFiled: September 7, 2004Date of Patent: April 15, 2008Assignee: South Epitaxy CorporationInventors: Shih-Chang Shei, Jinn-Kong Sheu
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Publication number: 20070295979Abstract: A structure of light emitting diode (LED) effectively reduces its spectral width. The LED structure is applied in a three color mixing of a backlight module to broaden a color space and to improve a saturation of a color display. A grating structure is used as a waveguide layer to coordinate with the LED structure. The present invention does not affect the original thermo and electrical characteristics of the LED structure and has a simple fabrication method.Type: ApplicationFiled: October 19, 2006Publication date: December 27, 2007Applicant: National Central UniversityInventors: Jenq-Yang Chang, Jinn-Kong Sheu, Chien-Chieh Lee, Yeeu-Chang Lee, Che-Lung Hsu, Yun-Chih Lee, Shen-Hang Tu
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Patent number: 7271418Abstract: The present invention is a semiconductor apparatus for white light generation and amplification, where, under different current bias, white light can be generated steadily and evenly by folding up multi-wavelength quantum wells and by side-injecting a current. And, the white light can be excited out electronically without mingling with a fluorescent powder so that the cost for sealing is reduced. Because the light is directly excited out by electricity to prevent from energy loss during fluorescence transformation, the light generation efficiency of the present invention is far greater than that of the traditional phosphorus mingled with light-emitting diode of white light. Besides, concerning the characteristics of the white light, the spectrum of the white light can be achieved by adjusting the structure and/or the number of the quantum wells while preventing from being limited by the atomic emission lines of the fluorescent powder.Type: GrantFiled: September 24, 2004Date of Patent: September 18, 2007Assignee: National Central UniversityInventors: Jin-Wei Shi, Jinn-Kong Sheu
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Publication number: 20070165414Abstract: A light-emitting diode package structure is provided. The light-emitting diode package comprises an insulating sub-mount, a first patterned conductive-reflective film, a second patterned conductive-reflective film and a light-emitting diode chip. The insulating sub-mount has a first surface and a cavity therein. The first and the second patterned conductive-reflective film are set over a portion of the first surface, a portion of the sidewalls of the cavity and a portion of the bottom surface of the cavity. The light-emitting diode chip is set up inside the cavity of the insulating sub-mount. The light-emitting diode has a pair of electrodes. The electrodes are electrically connected to the first and the second patterned conductive-reflective film respectively. Since the light-emitting diode structure of this invention incorporates the patterned conductive-reflective films, efficiency of the light-emitting diode is increased.Type: ApplicationFiled: March 5, 2007Publication date: July 19, 2007Inventors: Shih-Chang Shei, Jinn-Kong Sheu
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Publication number: 20070114518Abstract: A gallium nitride heterojunction bipolar transistor with a p-type strained InGaN base layer is provided. The gallium nitride heterojunction bipolar transistor includes a substrate, a highly doped collector contact layer located over the substrate, a low doped collector layer located over the collector contact layer, a p-type base layer located over the collector layer, a highly doped strained InGaN base layer located over the p-type base layer, a emitter layer located over the p-type strained InGaN base layer, a highly doped emitter contact layer located over the emitter layer, and an emitter metal electrode, a base metal electrode, and a collector metal electrode respectively located on the emitter contact layer, the p-type strained InGaN base layer, and the collector contact layer.Type: ApplicationFiled: May 30, 2006Publication date: May 24, 2007Inventors: Yue-Ming Hsin, Jinn-Kong Sheu, Kuang-Po Hsueh
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Patent number: 7205648Abstract: A flip-chip LED package structure is disclosed. The flip-chip LED package structure includes a submount, patterned conductive films, a LED chip and two bumps. Several grooves are formed on the sidewalls of the submount. The patterned conductive films are formed on the grooves. The patterned conductive films extend from the grooves to parts of a top surface and a backside surface of the submount. The bumps are formed on two electrodes of the LED chip. The LED chip is disposed on the submount and connects electrically with the patterned conductive films via the bumps. The flip-chip LED package structure is disposed on a circuit board and connects electrically with the circuit without the wire bonding.Type: GrantFiled: April 16, 2004Date of Patent: April 17, 2007Assignee: South Epitaxy CorporationInventors: Shih-Chang Shei, Jinn-Kong Sheu
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Patent number: 7153713Abstract: A method for manufacturing a high efficiency light-emitting diode (LED) is disclosed. In the method, a substrate is provided, in which an N-type buffer layer, an N-type cladding layer and an active layer are stacked on the substrate in sequence. A first P-type cladding layer is formed on the active layer. Next, a growth-interruption step is performed, and a catalyst is introduced to form a plurality of nuclei sites on a surface of the first P-type cladding layer. A second P-type cladding layer is formed on the first P-type cladding layer according to the nuclei sites, so that the second P-type cladding layer has a surface with a plurality of mesa hillocks. Then, a contact layer is formed on the second P-type cladding layer. Subsequently, a transparent electrode is formed on the contact layer.Type: GrantFiled: January 7, 2005Date of Patent: December 26, 2006Assignee: Epitech Technology CorporationInventors: Wei-Chih Lai, Jinn-Kong Sheu, Chi-Ming Tsai, Cheng-Ta Kuo
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Patent number: 7151281Abstract: A light-emitting diode (LED) structure with electrostatic discharge (ESD) protection is described. The LED includes a substrate, a patterned semiconductor layer, a first electrode and a second electrode. The patterned semiconductor layer is disposed over the substrate, and is divided into at least a first island structure and a second island structure. The first electrode and the second electrode are connected between the first island structure and the second island structure. A shunt diode is formed by the first electrode, the second electrode and the second island structure. The shunt diode is connected in parallel to the LED with an inverse voltage compared to the LED. In the LED structure of the invention, the first island structure and the second island structure are manufactured simultaneously by the epitaxy procedure. Therefore, the LED could be protected from damage due to electrostatic discharge (ESD).Type: GrantFiled: September 24, 2004Date of Patent: December 19, 2006Assignee: South Epitaxy CorporationInventors: Shih-Chang Shei, Jinn-Kong Sheu
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Patent number: 7105860Abstract: A flip chip light-emitting diode package comprising a Schottky diode group, a light-emitting diode and a plurality of bumps is provided. The Schottky diode group comprises a plurality of Schottky diodes electrically coupled in series or in parallel. The bumps are disposed between one of the Schottky diodes and the light-emitting diode so that the Schottky diode group and the light-emitting diode are connected reverse and in parallel. The light-emitting diode is disposed on one of the Schottky diodes and connected together by a flip-chip bonding process. The flip chip light-emitting diode package prevents damaging from electrostatic discharge and promotes light extraction efficiency. In addition, the submount of the Schottky diode is fabricated by using silicon material. Since silicon is an excellent material for heat dissipating, light extraction efficiency and reliability of the package is increased.Type: GrantFiled: July 9, 2004Date of Patent: September 12, 2006Assignee: Epitech Technology CorporationInventors: Shih-Chang Shei, Jinn-Kong Sheu
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Publication number: 20060094138Abstract: A method for manufacturing a high efficiency light-emitting diode (LED) is disclosed. In the method, a substrate is provided, in which an N-type buffer layer, an N-type cladding layer and an active layer are stacked on the substrate in sequence. A first P-type cladding layer is formed on the active layer. Next, a growth-interruption step is performed, and a catalyst is introduced to form a plurality of nuclei sites on a surface of the first P-type cladding layer. A second P-type cladding layer is formed on the first P-type cladding layer according to the nuclei sites, so that the second P-type cladding layer has a surface with a plurality of mesa hillocks. Then, a contact layer is formed on the second P-type cladding layer. Subsequently, a transparent electrode is formed on the contact layer.Type: ApplicationFiled: January 7, 2005Publication date: May 4, 2006Inventors: Wei-Chih Lai, Jinn-Kong Sheu, Chi-Ming Tsai, Cheng-Ta Kuo
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Publication number: 20060065886Abstract: The present invention is a semiconductor apparatus for white light generation and amplification, where, under different current bias, white light can be generated steadily and evenly by folding up multi-wavelength quantum wells and by side-injecting a current. And, the white light can be excited out electronically without mingling with a fluorescent powder so that the cost for sealing is reduced. Because the light is directly excited out by electricity to prevent from energy loss during fluorescence transformation, the light generation efficiency of the present invention is far greater than that of the traditional phosphorus mingled with light-emitting diode of white light. Besides, concerning the characteristics of the white light, the spectrum of the white light can be achieved by adjusting the structure and/or the number of the quantum wells while preventing from being limited by the atomic emission lines of the fluorescent powder.Type: ApplicationFiled: September 24, 2004Publication date: March 30, 2006Inventors: Jin-Wei Shi, Jinn-Kong Sheu
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Publication number: 20050205887Abstract: A flip chip light-emitting diode package comprising a Schottky diode group, a light-emitting diode and a plurality of bumps is provided. The Schottky diode group comprises a plurality of Schottky diodes electrically coupled in series or in parallel. The bumps are disposed between one of the Schottky diodes and the light-emitting diode so that the Schottky diode group and the light-emitting diode are connected reverse and in parallel. The light-emitting diode is disposed on one of the Schottky diodes and connected together by a flip-chip bonding process. The flip chip light-emitting diode package prevents damaging from electrostatic discharge and promotes light extraction efficiency. In addition, the submount of the Schottky diode is fabricated by using silicon material. Since silicon is an excellent material for heat dissipating, light extraction efficiency and reliability of the package is increased.Type: ApplicationFiled: July 9, 2004Publication date: September 22, 2005Inventors: Shih-Chang Shei, Jinn-Kong Sheu
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Publication number: 20050176234Abstract: A bumping process for a light emitting diode (LED) chip is provided. Firstly, a LED chip with a plurality of electrodes is provided, then a pattern plate having a plurality of openings is disposed on the LED chip, and the electrodes are correspondingly exposed by the openings. Then, a plurality of posts can be formed over the exposed electrodes by printing. After the printing process, the pattern plate is lifted and a reflow process is performed to the posts. The posts are formed by a printing process, the bumping process is less time-consuming and with lower costs and the height and the composition of the bumps can be precisely controlled, thus improving the reliability of LED die package structures.Type: ApplicationFiled: September 21, 2004Publication date: August 11, 2005Inventors: Shih-Chang Shei, Jinn-Kong Sheu
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Publication number: 20050176231Abstract: A bumping process for a light emitting diode (LED) chip is provided. Firstly, a LED chip with a plurality of electrodes is provided, then a pattern plate having a plurality of openings is disposed on the LED chip, and the electrodes are correspondingly exposed by the openings. Then, a plurality of posts can be formed over the exposed electrodes by printing. After the printing process, the pattern plate is lifted and a reflow process is performed to the posts. The posts are formed by a printing process, the bumping process is less time-consuming and with lower costs and the height and the composition of the bumps con be precisely controlled, thus improving the reliability of LED die package structures.Type: ApplicationFiled: September 7, 2004Publication date: August 11, 2005Inventors: Shih-Chang Shei, Jinn-Kong Sheu
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Publication number: 20050168127Abstract: A white light LED is provided. The white light LED includes an exciting light source and a fluorescent powder, wherein the wavelength of the light emitting from the exciting light source is in a range of about 250 nm to about 490 nmt. The fluorescent powder is disposed around the exciting light source to receive the light emitting from the exciting light source. Furthermore, the material of the fluorescent powder includes (Tb3-x-yCexRey)Al5O12, (Me1-x-yEuxRey)3SiO5, YBO3:Ce3+, YBO3:Tb3+, SrGa2O4:Eu2+, SrAl2O4:Eu2+, (Ba,Sr)MgAl10:Eu2+, Mn2+, Y2O3:Eu3+, Y2O3:Bi3+, (Y,Gd)2O3:Eu3+, (Y,Gd)2O3:Bi3+, Y2O2S:Eu3+, Y2O2S:Bi3+, (Me1-xEux)ReS, 6MgO,As2O5:Mn, Mg3SiO4:Mn, BaMgAl10O17:Eu2+ and (Ca,Sr,Ba)5(PO4)3Cl:Eu2+,Gd3+. The white light LED of the invention provides high luminous efficiency and excellent color rendering index.Type: ApplicationFiled: August 17, 2004Publication date: August 4, 2005Inventors: Shih-Chang Shei, Jinn-Kong Sheu, Jui-Kung Wu, Tai-Yu Chen, Chao-Lung Huang
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Publication number: 20050167680Abstract: A light-emitting diode (LED) structure with electrostatic discharge (ESD) protection is described. The LED includes a substrate, a patterned semiconductor layer, a first electrode and a second electrode. The patterned semiconductor layer is disposed over the substrate, and is divided into at least a first island structure and a second island structure. The first electrode and the second electrode are connected between the first island structure and the second island structure. A shunt diode is formed by the first electrode, the second electrode and the second island structure. The shunt diode is connected in parallel to the LED with an inverse voltage compared to the LED. In the LED structure of the invention, the first island structure and the second island structure are manufactured simultaneously by the epitaxy procedure. Therefore, the LED could be protected from damage due to electrostatic discharge (ESD).Type: ApplicationFiled: September 24, 2004Publication date: August 4, 2005Inventors: Shih-Chang Shei, Jinn-Kong Sheu
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Patent number: 6914268Abstract: A light emitting diode (LED) device is provided. The LED device includes a device substrate, a first doped layer of a first conductivity type, a light emitting layer, a second doped layer of a second conductivity type, a transparent conductive oxide layer, a reflecting layer and two electrodes. The first doped layer is deposited on the device substrate, the light emitting layer is deposited on a portion of the first doped layer, and the second doped layer is deposited on the light emitting layer. The first and the second doped layers are comprised of III-V semiconductor material respectively. The transparent conductive oxide layer is deposited on the second doped layer, and the reflecting layer is deposited on the transparent conductive oxide layer. The two electrodes are deposited on the reflecting layer and the first doped layer respectively.Type: GrantFiled: February 16, 2004Date of Patent: July 5, 2005Assignee: South Epitaxy CorporationInventors: Shih-Chang Shei, Jinn-Kong Sheu
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Publication number: 20050127485Abstract: A light-emitting diode package structure is provided. The light-emitting diode package comprises an insulating sub-mount, a first patterned conductive-reflective film, a second patterned conductive-reflective film and a light-emitting diode chip. The insulating sub-mount has a first surface and a cavity therein. The first and the second patterned conductive-reflective film are set over a portion of the first surface, a portion of the sidewalls of the cavity and a portion of the bottom surface of the cavity. The light-emitting diode chip is set up inside the cavity of the insulating sub-mount. The light-emitting diode has a pair of electrodes. The electrodes are electrically connected to the first and the second patterned conductive-reflective film respectively. Since the light-emitting diode structure of this invention incorporates the patterned conductive-reflective films, efficiency of the light-emitting diode is increased.Type: ApplicationFiled: April 16, 2004Publication date: June 16, 2005Inventors: Shih-Chang Shei, Jinn-Kong Sheu