Abstract: A flip-chip LED package structure is disclosed. The flip-chip LED package structure includes a submount, patterned conductive films, a LED chip and two bumps. Several grooves are formed on the sidewalls of the submount. The patterned conductive films are formed on the grooves. The patterned conductive films extend from the grooves to parts of a top surface and a backside surface of the submount. The bumps are formed on two electrodes of the LED chip. The LED chip is disposed on the submount and connects electrically with the patterned conductive films via the bumps. The flip-chip LED package structure is disposed on a circuit board and connects electrically with the circuit without the wire bonding.

Abstract: A light emitting diode (LED) device is provided. The LED device includes a device substrate, a first doped layer of a first conductivity type, a light emitting layer, a second doped layer of a second conductivity type, a transparent conductive oxide layer, a reflecting layer and two electrodes. The first doped layer is deposited on the device substrate, the light emitting layer is deposited on a portion of the first doped layer, and the second doped layer is deposited on the light emitting layer. The first and the second doped layers are comprised of III-V semiconductor material respectively. The transparent conductive oxide layer is deposited on the second doped layer, and the reflecting layer is deposited on the transparent conductive oxide layer. The two electrodes are deposited on the reflecting layer and the first doped layer respectively.

Abstract: An UV photo-detector having a GaN-based interlayer is provided. Because of the excellent insulating property of the GaN-based interlayer and an excellent Schottky contact between the GaN-based interlayer and electrodes of the device, the leakage current of the device is substantially reduced. For example, the material of the GaN-based interlayer includes AlxInyGa1?x?yN, in which x?0, y?0, 1?x+y. The GaN-based interlayer described above is manufactured without requiring a high temperature treatment process after the epitaxy process, and thus the process flow is simplified. Therefore, an UV photodetector having an excellent performance is obtained.

Abstract: An LED device is described, including a substrate, a first doped layer of a first conductivity type, a light emitting layer, a second doped layer of a second conductivity, and two electrodes. The first doped layer is disposed on the substrate, the light emitting layer is disposed on a portion of the first doped layer, and the second doped layer is disposed on the light emitting layer. The first and the second doped layers and the light emitting layer together constitute an active layer. The active layer has rough sidewalls capable of preventing total reflection of the side light incident thereto. The two electrodes are disposed on the first doped layer and the second doped layer, respectively.

Abstract: A light emitting diode with strained layer superlatices (SLS) crystal structure is formed on a substrate. A nucleation layer and a buffer layer are sequentially formed on the substrate, so as to ease the crystal growth for the subsequent crystal growing process. An active layer is covered between an upper and a lower cladding layers. The active later include III-N group compound semiconductive material. A SLS contact layer is located on the upper cladding layer. A transparent electrode is located on the contact later to serve as an anode. Another electrode layer has contact with the buffer layer, and is separated from the lower and upper cladding layers.

Abstract: A light emitting diode structure is formed on a substrate. A nucleation layer at low temperature is formed on the substrate. A buffer layer is formed on the nucleation layer for easing the subsequent formation of crystal growth. N active layer is disposed between an upper confinement layer and a lower confinement layer. The active layer include the semiconductor material doped with III-N elements. A contact layer is disposed on the upper confinement layer. A reversed tunneling layer is form on the contact layer, wherein the conductive types for both are different. A transparent layer is formed on the reversed tunneling layer. A cathode electrode contacts with the conductive buffer layer and is separated from the active layer and the transparent electrode.

Abstract: A group III-V element-based flip-chip assembled light-emitting diode structure with electrostatic protection capacity. A first conductive buffer layer and a second conductive buffer layer are formed over a transparent substrate. An active layer structure, a contact layer, an electrode is formed over the first conductive buffer layer. The active layer structure, the contact layer and the electrode together form a light-emitting diode structure. A metallic electrode is formed over the second conductive buffer layer to form a Schottky diode. Alternatively, a doped region is formed within the second conductive buffer layer to form a homo-junction diode structure. The anode and cathode of the diode above the second conductive buffer layer are electrically connected to the cathode and anode of the light-emitting diode, respectively.

Abstract: A light emitting diode with strained layer superlatices (SLS) crystal structure is formed on a substrate. A nucleation layer and a buffer layer are sequentially formed on the substrate, so as to ease the crystal growth for the subsequent crystal growing process. An active layer is covered between an upper and a lower cladding layers. The active later include III-N group compound semiconductive material. A SLS contact layer is located on the upper cladding layer. A transparent electrode is located on the contact later to serve as an anode. Another electrode layer has contact with the buffer layer, and is separated from the lower and upper cladding layers.

Abstract: A light emitting diode structure is formed on a substrate. A nucleation layer at low temperature is formed on the substrate. A buffer layer is formed on the nucleation layer for easing the subsequent formation of crystal growth. N active layer is disposed between an upper confinement layer and a lower confinement layer. The active layer include the semiconductor material doped with III-N elements. A contact layer is disposed on the upper confinement layer. A reversed tunneling layer is form on the contact layer, wherein the conductive types for both are different. A transparent layer is formed on the reversed tunneling layer. A cathode electrode contacts with the conductive buffer layer and is separated from the active layer and the transparent electrode.

Abstract: A III-N compound semiconductor bipolar transistor structure and method of manufacture. An epitaxial layer structure is formed over a substrate. The epitaxial layer structure includes a nucleation layer, a buffer layer, an emitter layer containing first type dopants (conductive type) and a base layer containing second type dopants (conductive type). Ion implantation is conducted to form a first conductive region within the base layer for forming a collector terminal. A portion of the emitter layer is etched for forming an emitter terminal. In addition, two ion-implantation regions may form inside the base layer. The ion-implantation regions serve separately as the collector terminal and the emitter terminal of the bipolar transistor, respectively, so that a more planar transistor structure is formed.

Abstract: A group III-V element-based flip-chip assembled light-emitting diode structure with electrostatic protection capacity. A first conductive buffer layer and a second conductive buffer layer are formed over a transparent substrate. An active layer structure, a contact layer, an electrode is formed over the first conductive buffer layer. The active layer structure, the contact layer and the electrode together form a light-emitting diode structure. A metallic electrode is formed over the second conductive buffer layer to form a Schottky diode. Alternatively, a doped region is formed within the second conductive buffer layer to form a homo-junction diode structure. The anode and cathode of the diode above the second conductive buffer layer are electrically connected to the cathode and anode of the light-emitting diode, respectively.