Abstract: A bidirectional Metal-Oxide-Semiconductor (MOS) device, including a P-type substrate, and an active region. The active region includes a drift region, a first MOS structure and a second MOS structure; the first MOS structure includes a first P-type body region, a first P+ contact region, a first N+ source region, a first metal electrode, and a first gate structure; the second MOS structure includes a second P-type body region, a second P+ contact region, a second N+ source region, a second metal electrode, and a second gate structure; and the drift region includes a dielectric slot, a first N-type layer, a second N-type layer, and an N-type region. The active region is disposed on the upper surface of the P-type substrate. The first MOS structure and the second MOS structure are symmetrically disposed on two ends of the upper layer of the drift region.

Abstract: The present invention discloses a testing method for dynamic model parameters of a wind power plant, wherein under testing conditions including stable running of wind turbine generators and reactive-load compensation equipment, stable wind speed between a cut-in wind speed and a rated wind speed, and the wind power plant output smaller than a rated output, finishes a wind speed transient disturbance test, a wind power plant unit tripping and inputting disturbance test, a wind power plant power change test, a disturbance test for reactive-load compensation equipment of the wind power plant, a tripping disturbance test for hydroelectric power plant and thermal power plant near the wind power plant and a manual single-phase ground short circuit test at the outgoing line part of the wind power plant, and records running curves of the wind power plant under each condition to finish the parameter test.

Abstract: Embodiments of this invention provide a rate matching device used for exchanging data between REC and at least one RE. The rate matching device comprises at least one first interface arranged to exchange user data between the REC and the rate matching device, at least one second interface arranged to exchange user data between the rate matching device and the at least one RE, and a map function block arranged to map the user data between at least one first interface and at least one second interface. Embodiments of this invention also provide a method for exchanging data between REC and at least one RE through the rate matching device.

Abstract: Edge termination structures for power semiconductor devices (or power devices) are disclosed. The purpose of this invention is to reduce the difficulty of deep trench etching and dielectric filling by adopting an inverted trapezoidal trench. In order to save the area of edge termination and get a high blocking voltage on condition that the angle between the sidewall of the trench and horizontal is large, fixed charges are introduced at a particular location in the trench. Due to the Coulomb interaction between the ionized impurity in the drift region and the fixed charges, the depletion region of the terminal PN junction can extend fully, which relieves the concentration of electric field there. Therefore, the edge termination can exhibit a high breakdown voltage near to that of the parallel plane junction with a smaller area and the reduced technical difficulty of deep trench etching and dielectric filling.

Abstract: A bidirectional IGBT device, including a cellular structure including: two MOS structures, a substrate drift layer, two highly doped buried layers operating for carrier storage or field stop, two metal electrodes, and isolating dielectrics. Each MOS structure includes: a body region, a heavily doped source region, a body contact region, and a gate structure. Each gate structure includes: a gate dielectric and a gate conductive material. The two MOS structures are symmetrically disposed on the top surface and the back surface of the substrate drift layer. The heavily doped source region and the body contact region are disposed in the body region and independent from each other, and both surfaces of the heavily doped source region and the body contact region are connected to each of the two metal electrodes. The gate dielectric separates the gate conductive material from a channel region of each of the MOS structures.

Abstract: An integrated high and low voltage ride through test system, comprising a primary system and a secondary system; the secondary system controls the primary system to realize information interaction, and is connected to a power grid and a wind generation set via an inlet wire switch cabinet and an outlet wire switch cabinet of the primary system; the integrated high and low voltage ride through test system actually simulates voltage drop and rise characteristics in a power grid failure, ensures that when generating a low voltage and a high voltage, the change of a voltage phase angle and power quality are consistent with actual power grid failure characteristics, and enables coherent low voltage and high voltage ride through capacity testing on the wind generation set in a primary test process.

Abstract: A DNS server DDoS attack mitigation system is provided, comprising a DNS cache module. A DNS query or UDP data packet from an originating source intended for a DNS server is to be diverted to the DNS cache module. The DNS cache module validates the DNS query or UDP data packet and discard it if it is malformed. The DNS cache module then extracts from the DNS query or UDP data packet a domain name and virtual IP address (VIP) of the requested destination resource, and source IP (SIP). Using the domain name, VIP, and SIP to find and retrieve from its cache the matching DNS record and respond with a response message according the matched DNS record type. If a match is not found, the DNS query or UDP data packet is dropped, dropped and responded to with a customizable message, or forwarded to the DNS server.

Abstract: A bidirectional Metal-Oxide-Semiconductor (MOS) device, including a P-type substrate, and an active region. The active region includes a drift region, a first MOS structure and a second MOS structure; the first MOS structure includes a first P-type body region, a first P+ contact region, a first N+ source region, a first metal electrode, and a first gate structure; the second MOS structure includes a second P-type body region, a second P+ contact region, a second N+ source region, a second metal electrode, and a second gate structure; and the drift region includes a dielectric slot, a first N-type layer, a second N-type layer, and an N-type region. The active region is disposed on the upper surface of the P-type substrate. The first MOS structure and the second MOS structure are symmetrically disposed on two ends of the upper layer of the drift region.

Abstract: A bidirectional IGBT device, including a cellular structure including: two MOS structures, a substrate drift layer, two highly doped buried layers operating for carrier storage or field stop, two metal electrodes, and isolating dielectrics. Each MOS structure includes: a body region, a heavily doped source region, a body contact region, and a gate structure. Each gate structure includes: a gate dielectric and a gate conductive material. The two MOS structures are symmetrically disposed on the top surface and the back surface of the substrate drift layer. The heavily doped source region and the body contact region are disposed in the body region and independent from each other, and both surfaces of the heavily doped source region and the body contact region are connected to each of the two metal electrodes. The gate dielectric separates the gate conductive material from a channel region of each of the MOS structures.

Abstract: A method for manufacturing a vertical super junction drift layer of a power semiconductor device. The method includes: a): adopting P+ single crystal silicon to prepare a P+ substrate; b): finishing top processes of the devices on the P+ substrate, forming at least P type region, manufacturing active area and metallizing the top surface of the P+ substrate; c): thinning the back surface of the P+ single crystal silicon; d): selectively implanting H+ ions at the back surface repeatedly and then annealing to form N pillars in the P type region; and e): metallizing the back surface.

Abstract: The present invention discloses a testing method for dynamic model parameters of a wind power plant, wherein under testing conditions including stable running of wind turbine generators and reactive-load compensation equipment, stable wind speed between a cut-in wind speed and a rated wind speed, and the wind power plant output smaller than a rated output, finishes a wind speed transient disturbance test, a wind power plant unit tripping and inputting disturbance test, a wind power plant power change test, a disturbance test for reactive-load compensation equipment of the wind power plant, a tripping disturbance test for hydroelectric power plant and thermal power plant near the wind power plant and a manual single-phase ground short circuit test at the outgoing line part of the wind power plant, and records running curves of the wind power plant under each condition to finish the parameter test.

Abstract: Embodiments of the present invention provide an IGBT, which relates to the field of integrated circuit manufacturing, and may improve a problem of tail current when the IGBT is turned off. The IGBT includes a cell region on a front surface, a terminal region surrounding the cell region, an IGBT drift region of a first conductivity type, and an IGBT collector region on a back surface. The IGBT collector region is connected to the IGBT drift region and under the IGBT drift region. The IGBT drift region includes a first drift region under the cell region and a second drift region under the terminal region. The IGBT collector region includes a cell collector region of a heavily doped second conductivity type under the first drift region and a non-conductive isolation region adjacent to the cell collector region.

Abstract: Embodiments of the present invention provide an IGBT, which relates to the field of integrated circuit manufacturing, and may improve a problem of tail current when the IGBT is turned off. The IGBT includes a cell region on a front surface, a terminal region surrounding the cell region, an IGBT drift region of a first conductivity type, and an IGBT collector region on a back surface. The IGBT collector region is connected to the IGBT drift region and under the IGBT drift region. The IGBT drift region includes a first drift region under the cell region and a second drift region under the terminal region. The IGBT collector region includes a cell collector region of a heavily doped second conductivity type under the first drift region and a non-conductive isolation region adjacent to the cell collector region.

Abstract: A lifting apparatus, especially a cable traction mechanism, comprising a base frame that has at least two base plates, further comprising at least two longitudinal beams that interconnect the base plates and are spaced apart from each other, and at least one attachable cross-member for cable reeving parts that is fastened to the base plates and extends substantially parallel to the longitudinal beams. Multiple mounting points, to which the attachable cross-member for cable reeving parts can be alternatively and detachably fastened, may be arranged on each of the base plates to promote modularity of the lifting apparatus.

Abstract: Embodiments of this invention provide a rate matching device used for exchanging data between REC and at least one RE. The rate matching device comprises at least one first interface arranged to exchange user data between the REC and the rate matching device, at least one second interface arranged to exchange user data between the rate matching device and the at least one RE, and a map function block arranged to map the user data between at least one first interface and at least one second interface. Embodiments of this invention also provide a method for exchanging data between REC and at least one RE through the rate matching device.

Abstract: A lifting apparatus, especially a cable traction mechanism, comprises a base frame that has at least two base plates and at least two longitudinal beams that interconnect the base plates and are spaced apart from each other. Attachment elements are mounted on the base plates by means of holding parts. The lifting apparatus, especially a cable traction mechanism, is characterized by a modular design, where the holding parts are arranged as extensions of the longitudinal beams.

Abstract: A lifting apparatus, especially a cable traction mechanism, comprises a base frame that has at least two base plates and at least two longitudinal beams that interconnect the base plates and are spaced apart from each other. Attachment elements are mounted on the base plates by means of holding parts. The lifting apparatus, especially a cable traction mechanism, is characterized by a modular design, where the holding parts are arranged as extensions of the longitudinal beams.

Abstract: A lifting apparatus, especially a cable traction mechanism, comprising a base frame that has at least two base plates, further comprising at least two longitudinal beams that interconnect the base plates and are spaced apart from each other, and at least one attachable cross-member for cable reeving parts that is fastened to the base plates and extends substantially parallel to the longitudinal beams. Multiple mounting points, to which the attachable cross-member for cable reeving parts can be alternatively and detachably fastened, may be arranged on each of the base plates to promote modularity of the lifting apparatus.

Abstract: Provided is a method of identifying a genetically abnormal cell in a sputum sample, the method comprising: (a) staining a sputum sample using a morphological stain so as to identify a lower airway tract cell or lung cell in the sputum sample; and (b) staining the sputum sample using fluorescent in situ hybridization (FISH) so as to identify in the lower airway tract cell or lung cell a genetic abnormality in at least one of human chromosome 3p22.1 and 10q22-23, thereby identifying the genetically abnormal cell in the sputum sample. Also provided are methods and kits of diagnosing lung cancer by detecting a presence of genetically abnormal cells above a predetermined threshold in a sputum sample.

Abstract: Disclosed herein is a method of making a gas sensor element, comprising calcining a NOx sensor electrode material at a NOx sensor electrode material calcination temperature of about 1200 to about 1600° C. to form a calcined NOx sensor electrode material, disposing the calcined NOx sensor electrode material on a substrate to form a substrate comprising a NOx sensor electrode, and firing the substrate comprising the NOx sensor electrode at a gas sensor element firing temperature to form a gas sensor element comprising a NOx sensor electrode. Also disclosed is a gas sensor comprising the gas sensor element.