Abstract: Embodiments of the present invention provide content addressable memory (CAM) arrays that include shared match lines. Other embodiments may be described and claimed.

Abstract: A method for manufacturing a planar sensor, comprises disposing a film of a material on a substrate, wherein the material is selected from the group consisting of platinum, rhodium, palladium and mixtures and alloys comprising at least one of the foregoing materials; annealing the material; measuring a resistance value of the material; laser trimming the annealed material; heat treating the laser trimmed material; and laser trimming the heat treated material to form the sensor.

Abstract: Embodiments of the present invention provide content addressable memory (CAM) arrays that include shared match lines. Other embodiments may be described and claimed.

Abstract: A method for manufacturing a planar sensor, comprises disposing a film of a material on a substrate, wherein the material is selected from the group consisting of platinum, rhodium, palladium and mixtures and alloys comprising at least one of the foregoing materials; annealing the material; measuring a resistance value of the material; laser trimming the annealed material; heat treating the laser trimmed material; and laser trimming the heat treated material to form the sensor.

Abstract: A sensing element and a method of making the same are provided. The sensing portion of the element comprises an inorganic binder and a sensing material. In some instances, the sensing material can be an ammonia sensing material.

Abstract: A sensor element can comprise a co-fired heater section, a sensing section, and a third insulating layer disposed between the electrode portion and the temperature sensor. The heater section can comprise a heater, a shield, and a temperature sensor, with a first insulating layer disposed between the heater and the shield, and a second insulating layer disposed between the shield and the temperature sensor. The sensing section can comprise an electrode portion and a sensing portion, wherein the sensing portion is disposed on a side of the electrode portion opposite the heater section.

Abstract: A sensor element can comprise a co-fired heater section, a sensing section, and a third insulating layer disposed between the electrode portion and the temperature sensor. The heater section can comprise a heater, a shield, and a temperature sensor, with a first insulating layer disposed between the heater and the shield, and a second insulating layer disposed between the shield and the temperature sensor. The sensing section can comprise an electrode portion and a sensing portion, wherein the sensing portion is disposed on a side of the electrode portion opposite the heater section.

Abstract: A sensor element can comprise a co-fired heater section, a sensing section, and a third insulating layer disposed between the electrode portion and the temperature sensor. The heater section can comprise a heater, a shield, and a temperature sensor, with a first insulating layer disposed between the heater and the shield, and a second insulating layer disposed between the shield and the temperature sensor. The sensing section can comprise an electrode portion and a sensing portion, wherein the sensing portion is disposed on a side of the electrode portion opposite the heater section.

Abstract: A bipolar plate for use in a fuel cell assembly having channels for conveying oxygen and fuel along the cathode and anode surfaces of adjacent fuel cell units. The channels are separated by lands for making electrical and mechanical contact with the respective cathode and anode surfaces and preferably are so configured as to provide the minimum area required for satisfactory electrical contact and mechanical support. The lands and channels preferably are formed as peaks and valleys or as raised or recessed dimples for making electrical/mechanical contact with the cathode and anode surfaces and are coated in those contact areas with corrosion-resistant metal such as gold, platinum, ruthenium, or combinations thereof.

Abstract: A method for manufacturing a planar sensor, comprises disposing a film of a material on a substrate, wherein the material is selected from the group consisting of platinum, rhodium, palladium and mixtures and alloys comprising at least one of the foregoing materials; annealing the material; measuring a resistance value of the material; laser trimming the annealed material; heat treating the laser trimmed material; and laser trimming the heat treated material to form the sensor.

Abstract: A bipolar plate for use in a fuel cell assembly having channels for conveying oxygen and fuel along the cathode and anode surfaces of adjacent fuel cell units. The channels are separated by lands for making electrical and mechanical contact with the respective cathode and anode surfaces and preferably are so configured as to provide the minimum area required for satisfactory electrical contact and mechanical support. The lands and channels preferably are formed as peaks and valleys or as raised or recessed dimples for making electrical/mechanical contact with the cathode and anode surfaces and are coated in those contact areas with corrosion-resistant metal such as gold, platinum, ruthenium, or combinations thereof.

Abstract: A magnetron sputter deposition process for producing a thin film alloy exhibiting shape memory characteristics comprising conducting the sputter deposition using krypton as process gas, depositing the alloy onto heated substrate so secondary annealing is unnecessary, and using a sputter target titanium, nickel and/or palladium in proportions so as to produce a thin film alloy of a composition having a titanium content ranging from at least about 50 atomic percent to less than about 52 atomic percent.

Abstract: A method for producing thin film deposits of ternary shape-memory alloys using an ion sputtering deposition process comprising using a hot pressed metal powder composition target.

Abstract: Disclosed is a method for producing ternary shape-memory alloy films employing sputtering process techniques using krypton as a process gas.

Abstract: A nickel titanium hafnium copper thin film shape memory alloy having a composition (TiHf)5-55(NiCu)45-50 comprising about 2 atomic percent to about 10 atomic percent copper and the fabrication method of said shape memory thin film by magnstron sputtering using Kr as working gas and conducting the deposition at elevated substrate temperature.

Abstract: A process is provided for forming a thin film deposit of a Ni—Ti—Hf ternary shape memory alloy on a substrate by magnetron sputtering deposition having high transformation temperatures and good shape-memory and mechanical properties. The method of forming a thin film deposit of a ternary shape memory alloy on a substrate by sputtering deposition comprises arranging a Ni—Ti—Hf target and a substrate within a deposition chamber, maintaining a working distance from the target to the substrate of about 83 mm to 95 mm; heating the substrate to a temperature high enough to induce in-situ crystallization; introducing a krypton working gas into the deposition chamber; applying appropriate level of deposition power so that the deposition rate is from about 6 Å per second to about 120 Å per second; and, depositing a Ni—Ti—Hf shape memory alloy film having a composition ranging from about Ni48(TiHf)52 to Ni50(TiHf)50.

Abstract: A method for producing thin film deposits of binary shape-memory alloys using an ion sputtering deposition process comprising using a hot pressed metal powder composition target.