Patents by Inventor Jinqiao Xie

Jinqiao Xie has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150200287
    Abstract: Embodiments include high electron mobility transistors (HEMTs) comprising a substrate and a barrier layer including a doped component. The doped component may be a germanium doped layer or a germanium doped pulse. Other embodiments may include methods for fabricating such a HEMT.
    Type: Application
    Filed: January 16, 2014
    Publication date: July 16, 2015
    Applicant: TriQuint Semiconductor, Inc.
    Inventors: Edward A. Beam, III, Jinqiao Xie
  • Publication number: 20140264714
    Abstract: The invention provides a power semiconductor device including an aluminum nitride single crystalline substrate, wherein the dislocation density of the substrate is less than about 105 cm?2 and the Full Width Half Maximum (FWHM) of the double axis rocking curve for the (002) and (102) crystallographic planes is less than about 200 arcsec; and a power semiconductor structure comprising at least one doped AlxGa1?xN layer overlying the aluminum nitride single crystalline substrate.
    Type: Application
    Filed: March 13, 2014
    Publication date: September 18, 2014
    Applicant: HEXATECH, INC.
    Inventors: Baxter Moody, Seiji Mita, Jinqiao Xie
  • Publication number: 20140209923
    Abstract: The invention provides an optoelectronic device adapted to emit ultraviolet light, including an aluminum nitride single crystalline substrate, wherein the dislocation density of the substrate is less than about 105 cm?2 and the Full Width Half Maximum (FWHM) of the double axis rocking curve for the (002) and (102) crystallographic planes is less than about 200 arcsec; and an ultraviolet light-emitting diode structure overlying the aluminum nitride single crystalline substrate, the diode structure including a first electrode electrically connected to an n-type semiconductor layer and a second electrode electrically connected to a p-type semiconductor layer. In certain embodiments, the optoelectronic devices of the invention exhibit a reverse leakage current less than about 10?5 A/cm2 at ?10V and/or an L80 of at least about 5000 hours at an injection current density of 28 A/cm2.
    Type: Application
    Filed: January 28, 2014
    Publication date: July 31, 2014
    Applicant: Hexatech, Inc.
    Inventors: Jinqiao Xie, Baxter Moody, Seiji Mita
  • Patent number: 8008181
    Abstract: Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.
    Type: Grant
    Filed: August 12, 2009
    Date of Patent: August 30, 2011
    Assignee: The Regents of The University of California
    Inventors: Zuzanna Liliental-Weber, Rogerio Luis Maltez, Hadis Morkoc, Jinqiao Xie
  • Publication number: 20100046567
    Abstract: Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.
    Type: Application
    Filed: August 12, 2009
    Publication date: February 25, 2010
    Applicant: The Regents of the University of California
    Inventors: Zuzanna Liliental-Weber, Rogerio Luis Maltez, Hadis Morkoc, Jinqiao Xie