Patents by Inventor Jinru Bian
Jinru Bian has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 9435120Abstract: An actuator for forming a texture layer on a target surface has a housing, a trigger, and an adapter. The housing supports the trigger for pivoting movement between first and second trigger positions. The housing supports the adapter member for sliding movement between first and second adapter positions. The trigger engages the adapter to displace the adapter from the first adapter position to the second adapter position as the trigger moves from the first trigger position to the second trigger position. The adapter engages a valve assembly such that the valve assembly is in closed and open configurations when the adapter is in the first and second adapter positions.Type: GrantFiled: March 13, 2013Date of Patent: September 6, 2016Assignee: Homax Products, Inc.Inventors: Randal W. Hanson, Jinru Bian, John Kordosh, Jason Everett, Jane D. Wasley
-
Publication number: 20140272140Abstract: An actuator for forming a texture layer on a target surface has a housing, a trigger, and an adapter. The housing supports the trigger for pivoting movement between first and second trigger positions. The housing supports the adapter member for sliding movement between first and second adapter positions. The trigger engages the adapter to displace the adapter from the first adapter position to the second adapter position as the trigger moves from the first trigger position to the second trigger position. The adapter engages a valve assembly such that the valve assembly is in closed and open configurations when the adapter is in the first and second adapter positions.Type: ApplicationFiled: March 13, 2013Publication date: September 18, 2014Inventors: Randal W. Hanson, Jinru Bian, John Kordosh, Jason Everett, Jane D. Wasley
-
Publication number: 20110318928Abstract: The invention provides a aqueous slurry useful for chemical mechanical polishing a semiconductor substrate having copper interconnects. The slurry comprises by weight percent, 0 to 25 oxidizing agent, 0.1 to 50 abrasive particles, 0.001 to 10 inhibitor for decreasing static etch of the copper interconnects, 0.001 to 5 poly(methyl vinyl ether) having a formula as follows: and the poly(methyl vinyl ether) is water soluble and n has a value of at least 5, 0.005 to 1 aminobutyric acid, 0.01 to 5 phosphorus-containing compound, 0 to 10 copper complexing agent formed during polishing and balance water.Type: ApplicationFiled: June 24, 2010Publication date: December 29, 2011Inventor: Jinru Bian
-
Patent number: 7988878Abstract: The polishing solution is useful for removing a barrier from a semiconductor substrate. The solution contains by weight percent 0.001 to 25 oxidizer, 0.0001 to 5 anionic surfactant, 0 to 15 inhibitor for a nonferrous metal, 0 to 40 abrasive, 0 to 20 complexing agent for the nonferrous metal, 0.01 to 12 barrier removal agent selected from imine derivative compounds, hydrazine derivative compounds and mixtures thereof, and water; and the solution has an acidic pH.Type: GrantFiled: September 29, 2004Date of Patent: August 2, 2011Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventor: Jinru Bian
-
Patent number: 7842192Abstract: The polishing solution is useful for removing barrier materials in the presence of at least one nonferrous interconnect metal with limited erosion of dielectrics. The solution contains 0 to 20 weight percent oxidizer, at least 0.001 weight percent inhibitor for reducing removal rate of the nonferrous interconnect metals, 1 ppm to 4 weight percent organic-containing ammonium cationic salt formed with a quanternary ammonium structure, 1 ppm to 4 weight percent anionic surfactant, the anionic surfactant having 4 to 25 carbon atoms and the total carbon atoms in of the ammonium cationic salt plus the anionic surfactant being 6 to 40 carbon atoms, 0 to 50 weight percent abrasive and balance water; and the solution having a pH of less than 7.Type: GrantFiled: February 8, 2006Date of Patent: November 30, 2010Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventors: Jinru Bian, Zhendong Liu
-
Patent number: 7790618Abstract: An aqueous solution is useful for selective removal in the presence of a low-k dielectric. The aqueous solution comprises by weight percent 0 to 25 oxidizer; 0.00002 to 5 multi-component surfactant, the multi-component surfactant having a hydrophobic tail, a nonionic hydrophilic portion and an anionic hydrophilic portion, the hydrophobic tail having 6 to 30 carbon atoms and the nonionic hydrophilic portion having 10 to 300 carbon atoms; 0 to 15 inhibitor for a nonferrous metal; 0 to 50 abrasive; 0 to 20 complexing agent for a nonferrous metal; and water.Type: GrantFiled: December 22, 2004Date of Patent: September 7, 2010Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventor: Jinru Bian
-
Patent number: 7767581Abstract: The polishing fluid is useful for polishing tantalum-containing barrier materials of a semiconductor substrate. The polishing fluid includes a nitrogen-containing compound having at least two nitrogen atoms comprising imine compounds and hydrazine compounds. The nitrogen-containing compound is free of electron-withdrawing substituents; and the polishing fluid is capable of removing the tantalum-containing barrier materials from a surface of the semiconductor substrate without an abrasive.Type: GrantFiled: May 19, 2006Date of Patent: August 3, 2010Assignee: Rohm and Haas Electronic Materials MCP Holdings, Inc.Inventor: Jinru Bian
-
Publication number: 20100159807Abstract: The aqueous slurry is useful for chemical mechanical polishing semiconductor substrates having copper interconnects. The slurry includes by weight percent, 0 to 25 oxidizing agent, 1 to 50 abrasive particles, 0.001 to 10 inhibitor for decreasing static etch of the copper interconnects, 0.001 to 5 poly(methyl vinyl ether) having a formula as follows: and the poly(methyl vinyl ether) is water soluble and n has a value of at least 5, 0 to 10 copper complexing agent formed during polishing and balance water.Type: ApplicationFiled: December 22, 2008Publication date: June 24, 2010Inventors: Jinru Bian, Qiangiu Ye
-
Publication number: 20090280724Abstract: The aqueous polishing method is useful for polishing semiconductor substrates including a TEOS layer and a SiOC layer. The method removes TEOS with a polishing composition having 0.05 to 50 weight percent abrasive, 0.001 to 2 weight percent lambda type carrageenan and an anionic surfactant. The lambda type carrageenan has a concentration useful for accelerating TEOS removal rate; and the anioinic surfactant is useful for suppressing removal rate of the SiOC layer.Type: ApplicationFiled: July 15, 2009Publication date: November 12, 2009Inventor: Jinru Bian
-
Patent number: 7491252Abstract: A chemical mechanical planarization solution is useful for removing tantalum barrier materials. The solution includes by weight percent 0 to 25 oxidizer, 0 to 15 inhibitor for a nonferrous metal and 0 to 20 complexing agent for the nonferrous metal, 0.01 to 12 tantalum removal agent selected from the group consisting of formamidine, formamidine salts, formamidine derivatives, guanidine derivatives, guanidine salts and mixtures thereof, 0 to 5 abrasive, 0 to 15 total particles selected from the group consisting of polymeric particles and polymer-coated coated particles and balance water. The solution has a tantalum nitride to TEOS selectivity of at least 3 to 1 as measured with a microporous polyurethane polishing pad pressure measure normal to a wafer less than 20.7 kPa.Type: GrantFiled: March 25, 2003Date of Patent: February 17, 2009Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventor: Jinru Bian
-
Publication number: 20090031636Abstract: The aqueous slurry is useful for chemical mechanical polishing a semiconductor substrate having copper interconnects. The slurry contains by weight percent, 0 to 25 oxidizing agent, 0.1 to 50 abrasive particles, 0.001 to 5 polyvinyl pyrrolidone, 0.00002 to 5 multi-component surfactant, the multi-component surfactant having a hydrophobic tail, a nonionic hydrophilic portion and an anionic hydrophilic portion, the hydrophobic tail having 6 to 30 carbon atoms and the nonionic hydrophilic portion having 10 to 300 carbon atoms, 0.001 to 10 inhibitor for decreasing static etch of the copper interconnects, 0 to 5 phosphorus-containing compound for increasing removal rate of the copper interconnects, 0.001 to 10 complexing agent formed during polishing and balance water.Type: ApplicationFiled: August 3, 2007Publication date: February 5, 2009Inventors: Qianqiu Ye, Jinru Bian
-
Publication number: 20090032765Abstract: The aqueous slurry is useful for chemical mechanical polishing a semiconductor substrate having copper interconnects. The slurry contains by weight percent, 0 to 25 oxidizing agent, 0.1 to 30 abrasive particles, 0.001 to 5 benzenecarboxylic acid, 0.00002 to 5 multi-component surfactant, the multi-component surfactant having a hydrophobic tail, a nonionic hydrophilic portion and an anionic hydrophilic portion, the hydrophobic tail having 6 to 30 carbon atoms and the nonionic hydrophilic portion having 10 to 300 carbon atoms, 0.001 to 10 inhibitor for decreasing static etch of the copper interconnects, 0 to 5 phosphorus-containing compound for increasing removal rate of the copper interconnects, 0 to 10 complexing agent formed during polishing and balance water.Type: ApplicationFiled: August 3, 2007Publication date: February 5, 2009Inventors: Jinru Bian, Qianqiu Ye
-
Publication number: 20070298611Abstract: The present invention provides an aqueous polishing composition useful for polishing semiconductor substrates. The composition comprises 0.05 to 50 weight percent abrasive and 0.001 to 5 weight percent iota type carrageenan. The iota type carrageenan has a concentration useful for accelerating the removal rate of tantalum, tantalum nitride and other tantalum-containing materials.Type: ApplicationFiled: June 27, 2006Publication date: December 27, 2007Inventor: Jinru Bian
-
Patent number: 7300480Abstract: The solution is useful for removing a barrier material from a semiconductor substrate. The solution comprises, by weight percent, 0.01 to 25 oxidizer, 0 to 15 inhibitor for a nonferrous metal, 0 to 15 abrasive, 0 to 20 complexing agent for the nonferrous metal, 0.01 to 12 barrier removal agent and balance water. The barrier removal agent is selected from the group comprising imine derivative compounds, hydrazine derivative compounds and mixtures thereof.Type: GrantFiled: September 25, 2003Date of Patent: November 27, 2007Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventors: Jinru Bian, Kai Hu, Hugh Li, Zhendong Liu, John Quanci, Matthew R. VanHanehem
-
Publication number: 20070184661Abstract: The polishing solution is useful for removing barrier materials in the presence of at least one nonferrous interconnect metal with limited erosion of dielectrics. The solution contains 0 to 20 weight percent oxidizer, at least 0.001 weight percent inhibitor for reducing removal rate of the nonferrous interconnect metals, 1 ppm to 4 weight percent organic-containing ammonium cationic salt formed with a quantenary ammonium structure, 1 ppm to 4 weight percent anionic surfactant, the anionic surfactant having 4 to 25 carbon atoms and the total carbon atoms in of the ammonium cationic salt plus the anionic surfactant being 6 to 40 carbon atoms, 0 to 50 weight percent abrasive and balance water; and the solution having a pH of less than 7.Type: ApplicationFiled: February 8, 2006Publication date: August 9, 2007Inventors: Jinru Bian, Zhendong Liu
-
Publication number: 20070163998Abstract: The aqueous polishing composition is useful for polishing semiconductor substrates. The polishing composition includes 0.05 to 50 weight percent abrasive; and 0.001 to 2 weight percent lambda type carrageenan, the lambda type carrageenan having a concentration useful for accelerating TEOS removal rate.Type: ApplicationFiled: March 15, 2007Publication date: July 19, 2007Inventor: Jinru Bian
-
Patent number: 7241725Abstract: The polishing fluid is useful for polishing tantalum-containing barrier materials of a semiconductor substrate. The polishing fluid includes a nitrogen-containing compound having at least two nitrogen atoms comprising imine compounds and hydrazine compounds. The nitrogen-containing compound is free of electron-withdrawing substituents; and the polishing fluid is capable of removing the tantalum-containing barrier materials from a surface of the semiconductor substrate without an abrasive.Type: GrantFiled: September 25, 2003Date of Patent: July 10, 2007Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventor: Jinru Bian
-
Publication number: 20070131899Abstract: The aqueous polishing composition is useful for polishing semiconductor substrates. The polishing composition includes 0.05 to 50 weight percent abrasive; and 0.001 to 2 weight percent lambda type carrageenan, the lambda type carrageenan having a concentration useful for accelerating TEOS removal rate.Type: ApplicationFiled: December 13, 2005Publication date: June 14, 2007Inventor: Jinru Bian
-
Publication number: 20060207635Abstract: The polishing fluid is useful for polishing tantalum-containing barrier materials of a semiconductor substrate. The polishing fluid includes a nitrogen-containing compound having at least two nitrogen atoms comprising imine compounds and hydrazine compounds. The nitrogen-containing compound is free of electron-withdrawing substituents; and the polishing fluid is capable of removing the tantalum-containing barrier materials from a surface of the semiconductor substrate without an abrasive.Type: ApplicationFiled: May 19, 2006Publication date: September 21, 2006Inventor: Jinru Bian
-
Publication number: 20060135045Abstract: The aqueous polishing composition is useful for polishing semiconductor substrates. The polishing solution comprises 0.001 to 2 wt % of a polyvinylalcohol copolymer, the polyvinylalcohol copolymer having a first component, a second component and a weight average molecular weight of 1,000 to 1,000,000 grams/mole, and the first component being 50 to 95 mole percent vinyl alcohol and the second component being more hydrophobic than the vinyl alcohol and 0.05 to 50 wt % silica abrasive particles; and the composition having a pH of 8 to 12.Type: ApplicationFiled: December 17, 2004Publication date: June 22, 2006Inventors: Jinru Bian, Raymond Lavoie, John Quanci, Qianqiu Ye