Patents by Inventor Jinru Bian

Jinru Bian has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20060131275
    Abstract: An aqueous solution is useful for selective removal in the presence of a low-k dielectric. The aqueous solution comprises by weight percent 0 to 25 oxidizer; 0.00002 to 5 multi-component surfactant, the multi-component surfactant having a hydrophobic tail, a nonionic hydrophilic portion and an anionic hydrophilic portion, the hydrophobic tail having 6 to 30 carbon atoms and the nonionic hydrophilic portion having 10 to 300 carbon atoms; 0 to 15 inhibitor for a nonferrous metal; 0 to 50 abrasive; 0 to 20 complexing agent for a nonferrous metal; and water.
    Type: Application
    Filed: December 22, 2004
    Publication date: June 22, 2006
    Inventor: Jinru Bian
  • Patent number: 7056829
    Abstract: An aqueous composition is useful for polishing semiconductor wafers. The composition comprises a nonionic surfactant that suppresses removal rate of silicon carbide-nitride and has a hydrophilic group and a hydrophobic group. The hydrophobic group has a carbon chain length of greater than three. And the nonionic surfactant suppresses silicon carbide-nitride removal rate at least 100 angstroms per minute greater than its decrease in silicon nitride removal rate as measured with a microporous polyurethane polishing pad pressure measured normal to a wafer of 13.8 kPa.
    Type: Grant
    Filed: August 9, 2005
    Date of Patent: June 6, 2006
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Jinru Bian, John Quanci, Matthew R. VanHanehem
  • Publication number: 20060068589
    Abstract: The polishing solution is useful for removing a barrier from a semiconductor substrate. The solution contains by weight percent 0.001 to 25 oxidizer, 0.0001 to 5 anionic surfactant, 0 to 15 inhibitor for a nonferrous metal, 0 to 40 abrasive, 0 to 20 complexing agent for the nonferrous metal, 0.01 to 12 barrier removal agent selected from imine derivative compounds, hydrazine derivative compounds and mixtures thereof, and water; and the solution has an acidic pH.
    Type: Application
    Filed: September 29, 2004
    Publication date: March 30, 2006
    Inventor: Jinru Bian
  • Publication number: 20050282390
    Abstract: An aqueous composition is useful for polishing semiconductor wafers. The composition comprises a nonionic surfactant that suppresses removal rate of silicon carbide-nitride and has a hydrophilic group and a hydrophobic group. The hydrophobic group has a carbon chain length of greater than three. And the nonionic surfactant suppresses silicon carbide-nitride removal rate at least 100 angstroms per minute greater than its decrease in silicon nitride removal rate as measured with a microporous polyurethane polishing pad pressure measured normal to a wafer of 13.8 kPa.
    Type: Application
    Filed: August 9, 2005
    Publication date: December 22, 2005
    Inventors: Jinru Bian, John Quanci, Matthew VanHanehem
  • Patent number: 6936541
    Abstract: A method for planarizing metal interconnects of a semiconductor wafer includes the steps of polishing the semiconductor wafer with a polishing solution and a polishing pad to planarize the metal interconnects. The polishing solution has by weight percent, 0.15 to 5 benzotriazole, 0 to 1 abrasive, 0 to 10 polymeric particles, 0 to 5 polymer-coated particles and balance water at a pH of less than 5 and a removal rate-pressure sensitivity (dr/dp) of at least 750 (?/min/psi). The polishing simultaneously accelerates removal of projecting metal from the metal interconnects with the polishing pad providing a first pressure that increases removal rate of the projecting metal; and it inhibits removal of recessed metal from the metal interconnects with the polishing pad providing a second pressure that decreases removal of the recessed metal.
    Type: Grant
    Filed: March 28, 2003
    Date of Patent: August 30, 2005
    Assignee: Rohn and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Jinru Bian, Tirthankar Ghosh, Terence M. Thomas
  • Publication number: 20050097825
    Abstract: The present invention provides an aqueous composition useful for polishing a semiconductor wafer, the wafer comprising a tantalum barrier material in the presence of a dielectric and an interconnect metal. The composition comprises an azole compound having a concentration sufficient to accelerate removal of the tantalum barrier material. In addition, the azole compound does not inhibit removal of the interconnect metal. The composition further comprises an abrasive. Also, the composition has a greater selectivity of the tantalum barrier material relative to the dielectric.
    Type: Application
    Filed: November 6, 2003
    Publication date: May 12, 2005
    Inventor: Jinru Bian
  • Publication number: 20050090106
    Abstract: A polishing fluid for second step barrier removal polishing in copper CMP that contains no oxidizing agent, an organic acid, an abrasive and optionally, a copper corrosion inhibitor shows a high selectivity of barrier to metal and barrier to insulating layer.
    Type: Application
    Filed: October 22, 2003
    Publication date: April 28, 2005
    Inventor: Jinru Bian
  • Publication number: 20050070211
    Abstract: The polishing fluid is useful for polishing tantalum-containing barrier materials of a semiconductor substrate. The polishing fluid includes a nitrogen-containing compound having at least two nitrogen atoms comprising imine compounds and hydrazine compounds. The nitrogen-containing compound is free of electron-withdrawing substituents; and the polishing fluid is capable of removing the tantalum-containing barrier materials from a surface of the semiconductor substrate without an abrasive.
    Type: Application
    Filed: September 25, 2003
    Publication date: March 31, 2005
    Inventor: Jinru Bian
  • Publication number: 20050066585
    Abstract: The solution is useful for removing a barrier material from a semiconductor substrate. The solution comprises, by weight percent, 0.01 to 25 oxidizer, 0 to 15 inhibitor for a nonferrous metal, 0 to 15 abrasive, 0 to 20 complexing agent for the nonferrous metal, 0.01 to 12 barrier removal agent and balance water. The barrier removal agent is selected from the group comprising imine derivative compounds, hydrazine derivative compounds and mixtures thereof.
    Type: Application
    Filed: September 25, 2003
    Publication date: March 31, 2005
    Inventors: Jinru Bian, Kai Hu, Hugh Li, Zhendong Liu, John Quanci, Matthew VanHanehem
  • Publication number: 20050056810
    Abstract: An aqueous composition is useful for polishing semiconductor wafers. The composition comprises a nonionic surfactant that suppresses removal rate of silicon carbide-nitride and has a hydrophilic group and a hydrophobic group. The hydrophobic group has a carbon chain length of greater than three. And the nonionic surfactant suppresses silicon carbide-nitride removal rate at least 100 angstroms per minute greater than its decrease in silicon nitride removal rate as measured with a microporous polyurethane polishing pad pressure measured normal to a wafer of 13.8 kPa.
    Type: Application
    Filed: September 17, 2003
    Publication date: March 17, 2005
    Inventors: Jinru Bian, John Quanci, Matthew VanHanehem
  • Publication number: 20040023492
    Abstract: A method for planarizing metal interconnects of a semiconductor wafer includes the steps of polishing the semiconductor wafer with a polishing solution and a polishing pad to planarize the metal interconnects. The polishing solution has by weight percent, 0.15 to 5 benzotriazole, 0 to 1 abrasive, 0 to 10 polymeric particles, 0 to 5 polymer-coated particles and balance water at a pH of less than 5 and a removal rate-pressure sensitivity (dr/dp) of at least 750 (Å/min/psi). The polishing simultaneously accelerates removal of projecting metal from the metal interconnects with the polishing pad providing a first pressure that increases removal rate of the projecting metal; and it inhibits removal of recessed metal from the metal interconnects with the polishing pad providing a second pressure that decreases removal of the recessed metal.
    Type: Application
    Filed: March 28, 2003
    Publication date: February 5, 2004
    Inventors: Jinru Bian, Tirthankar Ghosh, Terence M. Thomas
  • Patent number: 6679928
    Abstract: A polishing composition for polishing a semiconductor substrate has a pH of under 5.0 and comprises (a) a carboxylic acid polymer comprising polymerized unsaturated carboxylic acid monomers having a number average molecular weight of about 20,000 to 1,500,000 or blends of high and low number average molecular weight polymers of polymerized unsaturated carboxylic acid monomers, (b) 1 to 15% by weight of an oxidizing agent, (c) up to 3.0% by weight of abrasive particles, (d) 50-5,000 ppm (parts per million) of an inhibitor, (e) up to 3.0% by weight of a complexing agent, such as, malic acid, and (f) 0.1 to 5.0% by weight of a surfactant.
    Type: Grant
    Filed: April 12, 2002
    Date of Patent: January 20, 2004
    Assignee: Rodel Holdings, Inc.
    Inventors: Wesley D. Costas, Tirthankar Ghosh, Jinru Bian, Karel-Anne Valentine
  • Publication number: 20030181345
    Abstract: A chemical mechanical planarization solution is useful for removing tantalum barrier materials. The solution includes by weight percent 0 to 25 oxidizer, 0 to 15 inhibitor for a nonferrous metal and 0 to 20 complexing agent for the nonferrous metal, 0.01 to 12 tantalum removal agent selected from the group consisting of formamidine, formamidine salts, formamidine derivatives, guanidine derivatives, guanidine salts and mixtures thereof, 0 to 5 abrasive, 0 to 15 total particles selected from the group consisting of polymeric particles and polymer-coated coated particles and balance water. The solution has a tantalum nitride to TEOS selectivity of at least 3 to 1 as measured with a microporous polyurethane polishing pad pressure measure normal to a wafer less than 20.7 kPa.
    Type: Application
    Filed: March 25, 2003
    Publication date: September 25, 2003
    Inventor: Jinru Bian
  • Patent number: 6605537
    Abstract: A method of polishing a semiconductor substrate by adjusting the polishing composition with a BTA concentration that raises the metal removal rate when polishing at a relatively high polishing pressure, and that minimizes the metal removal rate when polishing metal in trough at a lower polishing pressure; and adjusting the polishing pressure on metal in each trough to a level that removes metal from trough at a minimized removal rate, while simultaneously polishing the excess metal with a higher polishing pressure.
    Type: Grant
    Filed: October 26, 2001
    Date of Patent: August 12, 2003
    Assignee: Rodel Holdings, Inc.
    Inventors: Jinru Bian, Tirthankar Ghosh, Terence M. Thomas
  • Publication number: 20030037697
    Abstract: A polishing fluid for polishing a metal includes, submicron particles, water, and a nonoxidizing reagent for removal of the metal, the nonoxidizing reagent being a hard base anion species of a Lewis base having a chemical bonding affinity for the metal to deter formation of a passivation oxide on the metal, which hard base anion is present in a concentration that maximizes removal of the metal in the absence of the passivation oxide.
    Type: Application
    Filed: August 21, 2001
    Publication date: February 27, 2003
    Inventor: Jinru Bian
  • Publication number: 20020189169
    Abstract: A polishing composition for polishing a semiconductor substrate has a pH of under 5.
    Type: Application
    Filed: April 12, 2002
    Publication date: December 19, 2002
    Inventors: Wesley D. Costas, Tirthankar Ghosh, Jinru Bian, Karel-Anne Valentine
  • Publication number: 20020106897
    Abstract: A method of polishing a semiconductor substrate by adjusting the polishing composition with a BTA concentration that raises the metal removal rate when polishing at a relatively high polishing pressure, and that minimizes the metal removal rate when polishing metal in trough at a lower polishing pressure; and adjusting the polishing pressure on metal in each trough to a level that removes metal from trough at a minimized removal rate, while simultaneously polishing the excess metal with a higher polishing pressure.
    Type: Application
    Filed: October 26, 2001
    Publication date: August 8, 2002
    Inventors: Jinru Bian, Tirthankar Ghosh, Terence M. Thomas
  • Publication number: 20020062600
    Abstract: A polishing composition for chemical mechanical polishing of semiconductor wafers having a copper metal circuit includes, an aqueous composition having a pH of under 5.0, and polyacrylic acid having a number average molecular weight of about 20,000-150,000, or blends of high and low number average molecular weight polyacrylic acids.
    Type: Application
    Filed: August 9, 2001
    Publication date: May 30, 2002
    Inventors: Glenn C. Mandigo, Terence M. Thomas, Craig D. Lack, Ross E. Lack, Jinru Bian, Tirthankar Ghosh
  • Publication number: 20020042199
    Abstract: A polishing composition for polishing with a polishing pad to remove a metal layer from a semiconductor wafer having the metal layer and further having recessed metal in trenches, the composition having a concentration of BTA selected to maximize the rate of change in the removal rate of a metal layer with increases in downforce exerted by a polishing pad during polishing, which maximizes a difference between the removal rate of the metal layer and the removal rate of the recessed metal in trenches.
    Type: Application
    Filed: September 20, 2001
    Publication date: April 11, 2002
    Inventors: Jinru Bian, Tirthankar Ghosh, Terence M. Thomas