Patents by Inventor Jinrui GUO

Jinrui GUO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190233940
    Abstract: Embodiments herein provide for radical based treatment of silicon nitride layers deposited using a flowable chemical vapor deposition (FCVD) process. Radical based treatment of the FCVD deposited silicon nitride layers desirably increases the number of stable Si—N bonds therein, removes undesirably hydrogen impurities therefrom, and desirably provides for further crosslinking, densification, and nitridation (nitrogen incorporation) in the resulting silicon nitride layer. In one embodiment, a method of forming a silicon nitride layer includes positioning a substrate on a substrate support disposed in the processing volume of a processing chamber and treating a silicon nitride layer deposited on the substrate. Treating the silicon nitride layer includes flowing one or more radical species of a first gas comprising NH3, N2, H2, Ar, He, or combinations thereof and exposing a silicon nitride layer to the radical species.
    Type: Application
    Filed: January 24, 2019
    Publication date: August 1, 2019
    Inventors: Jinrui GUO, Jingmei LIANG, Praket P. JHA, Tejasvi ASHOK, Tza-Jing GUNG
  • Publication number: 20180330980
    Abstract: Implementations disclosed herein relate to methods for forming and filling trenches in a substrate with a flowable dielectric material. In one implementation, the method includes subjecting a substrate having at least one trench to a deposition process to form a flowable layer over a bottom surface and sidewall surfaces of the trench in a bottom-up fashion until the flowable layer reaches a predetermined deposition thickness, subjecting the flowable layer to a first curing process, the first curing process being a UV curing process, subjecting the UV cured flowable layer to a second curing process, the second curing process being a plasma or plasma-assisted process, and performing sequentially and repeatedly the deposition process, the first curing process, and the second curing process until the plasma cured flowable layer fills the trench and reaches a predetermined height over a top surface of the trench.
    Type: Application
    Filed: May 11, 2018
    Publication date: November 15, 2018
    Inventors: Jingmei LIANG, Yong SUN, Jinrui GUO, Praket P. JHA, Jung Chan LEE, Tza-Jing GUNG, Mukund SRINIVASAN
  • Patent number: 10041167
    Abstract: Methods are described for a cyclical deposition and curing process. More particularly, the implementations described herein provide a cyclic sequential deposition and curing process for filling features formed on a substrate. Features are filled to ensure electrical isolation of features in integrated circuits formed on a substrate. The processes described herein use flowable film deposition processes that have been effective in reducing voids or seams produced in features formed on a substrate. However, conventional gap-filling methods using flowable films typically contain dielectric materials that have undesirable physical and electrical properties. In particular, film density is not uniform, film dielectric constant varies across the film thickness, film stability is not ideal, film refractive index is inconsistent, and resistance to dilute hydrofluoric acid (DHF) is not ideal in conventional flowable films.
    Type: Grant
    Filed: January 20, 2016
    Date of Patent: August 7, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Jingmei Liang, Jung Chan Lee, Jinrui Guo, Mukund Srinivasan
  • Publication number: 20160244879
    Abstract: Methods are described for a cyclical deposition and curing process. More particularly, the implementations described herein provide a cyclic sequential deposition and curing process for filling features formed on a substrate. Features are filled to ensure electrical isolation of features in integrated circuits formed on a substrate. The processes described herein use flowable film deposition processes that have been effective in reducing voids or seams produced in features formed on a substrate. However, conventional gap-filling methods using flowable films typically contain dielectric materials that have undesirable physical and electrical properties. In particular, film density is not uniform, film dielectric constant varies across the film thickness, film stability is not ideal, film refractive index is inconsistent, and resistance to dilute hydrofluoric acid (DHF) is not ideal in conventional flowable films.
    Type: Application
    Filed: January 20, 2016
    Publication date: August 25, 2016
    Inventors: Jingmei LIANG, Jung Chan LEE, Jinrui GUO, Mukund SRINIVASAN