Abstract: A flexible battery includes an electrode group including a first electrode and a second electrode, a pair of electrode leads connected to the first electrode and the second electrode, respectively and a housing that accommodates the electrode group.

Abstract: A semiconductor memory device comprises a substrate including a first source/drain region and a second source/drain region, a trench between the first source/drain region and the second source/drain region and formed in the substrate, a cell gate insulating layer on sidewalls and a bottom surface of the trench, a cell gate electrode on the cell gate insulating layer, a work function control pattern on the cell gate electrode, including N-type impurities and a cell gate capping pattern on the work function control pattern. The work function control pattern includes a semiconductor material. The work function control pattern includes a first region and a second region between the first region and the cell gate electrode. A concentration of the N-type impurities in the first region is greater than a concentration of the N-type impurities in the second region.

Abstract: An electrode assembly according to the present disclosure includes one or more unit cells each equipped with a pair of electrodes having different polarities with a separator interposed therebetween, an electrode mixture coated on one or both surfaces of the pair of electrodes, and electrode tabs located on the edges of the respective electrodes and not coated with the electrode mixture, and the electrode tabs include an electrode parallel connection tab and an electrode lead connection tab, and any one or more of the electrode parallel connection tab and the electrode lead connection tab are formed on the electrodes, and an outermost electrode is a negative electrode.

Abstract: The method comprises registering at least one of an internet protocol (IP) address and a media access control (MAC) address of the security devices, generating a plurality of public key and private key pairs, encrypting and storing private keys comprised in the plurality of public key and private key pairs using a master key provided from a master key management unit, selecting any one of a plurality of public key and private key pairs when the access of the security device is approved and providing a certificate comprising the selected public key to the security device, receiving a symmetric key encrypted with the public key of the certificate from the security device, and decrypting the private key using the master key provided from the master key management unit.

Abstract: An apparatus for providing brain lesion information based on an image includes a magnetic resonance angiography (MRA) provider configured to provide an environment capable of displaying 3D time-of-flight magnetic resonance angiography (3D TOF MRA) using user input, a brain lesion input unit configured to generate and manage a brain lesion image, a maximum intensity projection (MIP) converter configured to configure MIP image data including at least one image frame corresponding to a projection position of the brain lesion image, a noise remover configured to remove noise of brain lesion information and to configure corrected MIP image data, from which the noise is removed, and an MRA reconfiguration unit configured to reconfigure a corrected brain lesion image by back-projecting the corrected MIP image data.

Abstract: A thermoplastic resin composition of the present invention is characterized by including: about 100 parts by weight of a polyolefin resin; about 10-80 parts by weight of a flame retardant other than sodium phosphate; about 1-25 parts by weight of zinc oxide having an average particle size of about 0.2-3 ?m and a specific surface area BET of about 1-10 m2/g; and about 1-50 parts by weight of sodium phosphate. The thermoplastic resin composition has excellent antibacterial properties, flame retardant properties, chemical-resistant antibacterial properties, and the like.

Abstract: A semiconductor device includes bit lines extending in a first direction on a substrate, a lower contact connected to the substrate between two adjacent ones of the bit lines, a landing pad on the lower contact, and an insulating structure surrounding a sidewall of the landing pad, the insulating structure including a first insulating pattern having a top surface at a lower level than a top surface of the landing pad, and a second insulating pattern on the top surface of the first insulating pattern.

Abstract: An electronic device that operates on the basis of a cloud server, according to one embodiment of the present invention, comprises: a biometric sensor; a database for storing identification information about at least one from among the biometric sensor, a user, and the electronic device, and biometric information registered by the biometric sensor; and at least one processor, wherein the at least one processor receives an authentication request of an authentication server through the cloud server, acquires biometric information of the user through the biometric sensor in response to the reception of the authentication request, determines whether the acquired biometric information corresponds to the biometric information stored in the database, generates a response value including information about whether the acquired biometric information corresponds to the biometric information stored in the database, and transmits the identification information and the generated response value to the cloud server, and the

Abstract: A thermoplastic resin composition according to the present invention comprises: about 100 parts by weight of a rubber-modified aromatic vinyl copolymer resin; about 5 to about 20 parts by weight of an epoxy group-containing vinyl copolymer; about 0.5 to about 5 parts by weight of a maleic anhydride-aromatic vinyl copolymer; about 8 to about 40 parts by weight of glass fibers; and about 10 to about 40 parts by weight of a phosphorus flame retardant, wherein the epoxy group-containing vinyl copolymer and the maleic anhydride-aromatic vinyl copolymer are present in a weight ratio of about 1:0.05 to about 1:0.5. The thermoplastic resin composition has good properties in terms of impact resistance, flame retardancy, heat resistance, fluidity, appearance characteristics, and the like.

Abstract: A thermoplastic resin composition of the present invention is characterized by containing: about 100 parts by weight of a thermoplastic resin including rubber-modified vinyl-based graft copolymer and aromatic vinyl-based copolymer resins; about 10-50 parts by weight of a flame retardant other than a phosphorus-based compound; about 1.5-3.5 parts by weight of zinc oxide particles having an average particle size of about 0.2-3 ?m and a BET specific surface area of about 1-10 m2/g; and about 2.5-6.5 parts by weight of sodium phosphate. The thermoplastic resin composition has excellent antibacterial properties, flame retardant properties, and impact resistance properties.

Abstract: A thermoplastic resin composition according to the present invention comprises: about 100 parts by weight of a thermoplastic resin comprising about 30 to about 60 wt % of a rubber-modified aromatic vinyl-based copolymer resin, about 30 to about 60 wt % of a polycarbonate resin, and about 5 to about 25 wt % of a polyester resin; about 0.1 to about 5 parts by weight of zinc oxide; about 0.1 to about 3 parts by weight of a phosphite compound comprising at least one type from among a phosphite compound represented by chemical formula 1 and a phosphite compound represented by chemical formula 2; and about 5 to about 30 parts by weight of a phosphorus-based flame retardant. The thermoplastic resin composition has excellent hydrolysis resistance, flame retardancy, and impact resistance, excellent balance of the foregoing physical properties, and the like.

Abstract: Disclosed are a semiconductor memory device and a method of manufacturing the same. The semiconductor memory device includes a device isolation layer defining active regions of a substrate, and gate lines buried in the substrate and extending across the active regions. Each of the gate lines includes a conductive layer, a liner layer disposed between and separating the conductive layer and the substrate, and a first work function adjusting layer disposed on the conductive layer and the liner layer. The first work function adjusting layer includes a first work function adjusting material. A work function of the first work function adjusting layer is less than those of the conductive layer and the liner layer.

Abstract: A thermoplastic resin composition of the present invention is characterized by including: about 100 parts by weight of a polyolefin resin; about 10-80 parts by weight of a flame retardant other than sodium phosphate; about 1-25 parts by weight of zinc oxide having an average particle size of about 0.2-3 ?m and a specific surface area BET of about 1-10 m2/g; and about 1-50 parts by weight of sodium phosphate. The thermoplastic resin composition has excellent antibacterial properties, flame retardant properties, chemical-resistant antibacterial properties, and the like.

Abstract: Disclosed is a mobile terminal for providing information based on an image, wherein the mobile terminal executes at least one of an installed artificial intelligence (AI) algorithm and a machine learning algorithm, and is capable of communicating with other electronic devices and external servers in a 5G communication environment. The mobile terminal includes a camera, a display, and a processor. Accordingly, since an image capture target can be accurately recognized, various services for improving user convenience can be provided.

Abstract: Disclosed are a semiconductor memory device and a method of manufacturing the same. The semiconductor memory device includes a device isolation layer defining active regions of a substrate, and gate lines buried in the substrate and extending across the active regions. Each of the gate lines includes a conductive layer, a liner layer disposed between and separating the conductive layer and the substrate, and a first work function adjusting layer disposed on the conductive layer and the liner layer. The first work function adjusting layer includes a first work function adjusting material. A work function of the first work function adjusting layer is less than those of the conductive layer and the liner layer.

Abstract: A thermoplastic resin composition includes: about 100 parts by weight of a thermoplastic resin including about 35 wt % to about 55 wt % of a polycarbonate resin, about 3 wt % to about 9 wt % of a first rubber-modified aromatic vinyl graft copolymer, about 7 wt % to about 13 wt % of a second rubber-modified aromatic vinyl graft copolymer, and about 30 wt % to about 50 wt % of an aromatic vinyl copolymer resin; about 6 to about 13 parts by weight of a halogen compound; and about 8 to about 17 parts by weight of a phosphoric ester compound. The first rubber-modified aromatic vinyl graft copolymer is obtained by graft copolymerization of an alkyl(meth)acrylate, an aromatic vinyl monomer and a copolymerizable monomer to a rubber polymer, and the second rubber-modified aromatic vinyl graft copolymer is obtained by graft copolymerization of an aromatic vinyl monomer and a copolymerizable monomer to a rubber polymer.

Abstract: A semiconductor memory device includes a separation member defining active regions of a substrate. Gate lines intersect the active regions and are each buried in a trench formed in the substrate. Each of the gate lines includes a lower electrode structure and an upper electrode structure on the lower electrode structure. The upper electrode structure includes a source layer substantially covering a sidewall of the trench and including a work-function adjustment element. A conductive layer is on the source layer. A work-function adjustment layer is disposed between the source layer and the conductive layer. The work-function adjustment layer includes a material different from that of the source layer and is doped with the work-function adjustment element.

Abstract: A semiconductor device includes a first overlay group and a second overlay group disposed on a semiconductor substrate. The first overlay group includes first lower overlay patterns which extend in a first direction, first upper overlay patterns overlapping the first lower overlay patterns, and first via overlay patterns interposed between the first lower overlay patterns and the first upper overlay patterns. The second overlay group includes second lower overlay patterns which extend in a second direction, second upper overlay patterns overlapping the second lower overlay patterns, and second via overlay patterns interposed between the second lower overlay patterns and the second upper overlay patterns. The second lower overlay patterns include end portions adjacent to and spaced apart from the first overlay group.

Abstract: Disclosed is a mobile terminal for providing information based on an image, wherein the mobile terminal executes at least one of an installed artificial intelligence (AI) algorithm and a machine learning algorithm, and is capable of communicating with other electronic devices and external servers in a 5G communication environment. The mobile terminal includes a camera, a display, and a processor. Accordingly, since an image capture target can be accurately recognized, various services for improving user convenience can be provided.

Abstract: A semiconductor device includes a substrate including spaced-apart active regions, and device isolating regions isolating the active regions from each other, and a pillar array pattern including a plurality of pillar patterns overlapping the active regions, the plurality of pillar patterns being spaced apart from each other at an equal distance in a first direction and in a second direction intersecting the first direction, wherein the plurality of pillar patterns include first pillar patterns and second pillar patterns disposed alternatingly in the first direction and in the second direction, a shape of a horizontal cross section of the first pillar patterns being different from a shape of a horizontal cross section of the second pillar patterns.