Abstract: A semiconductor device includes a substrate with a conductive pattern. A semiconductor die is electrically connected to the substrate and both the semiconductor die and the substrate are at least partially covered by a package body. In some examples, through-mold vias are formed in the package body to provide electrical signal paths from an exterior surface thereof to the conductive pattern of the substrate. In some examples, through-mold vias are included in the package body to provide electrical signal paths between the semiconductor die and an exterior surface of the package body. In some examples, an interposer is electrically connected to the through-mold vias and may be covered by the package body and/or disposed in spaced relation thereto. In some examples, the interposer may not be electrically connected to the through-mold vias but may have one or more semiconductor dies of the semiconductor device electrically connected thereto.

Abstract: Disclosed is a touch sensitive display apparatus which decreases a load of each of a plurality of touch electrodes and reduces a load deviation between the plurality of touch electrodes, thereby enhancing image quality. The touch sensitive display apparatus comprises a touch sensitive panel. The touch panel comprises a plurality of touch electrodes comprising at least a first touch electrode. The first touch electrode comprises a plurality of first touch electrode lines that are parallel to each other. A first touch signal line is connected to the plurality of first touch electrode lines of the first touch electrode, and the first touch electrode is driven for image display and touch sensing via the first touch signal line. A first connecting line is in a different layer than the first touch electrode lines, and the first connecting line is connected to the plurality of first touch electrode lines.

Abstract: The method comprises registering at least one of an internet protocol (IP) address and a media access control (MAC) address of the security devices, generating a plurality of public key and private key pairs, encrypting and storing private keys comprised in the plurality of public key and private key pairs using a master key provided from a master key management unit, selecting any one of a plurality of public key and private key pairs when the access of the security device is approved and providing a certificate comprising the selected public key to the security device, receiving a symmetric key encrypted with the public key of the certificate from the security device, and decrypting the private key using the master key provided from the master key management unit.

Abstract: Disclosed herein are a method, an apparatus and a storage medium for encoding/decoding using a transform-based feature map. An optimal basis vector is extracted from one or more feature maps, and a transform coefficient is acquired through a transform using the basis vector. The basis vector and the transform coefficient may be transmitted through a bitstream. In an embodiment, one or more feature maps are reconstructed using the basis vector and the transform coefficient, which are decoded from the bitstream.

Abstract: A method of manufacturing a display device including a pixel which is connected to a scan line and a data line intersecting the scan line. The pixel includes a light emitting element and a driving transistor controlling a driving current, which is supplied to the light emitting element, according to a data voltage received from the data line. The driving transistor includes a first active layer having an oxide semiconductor containing tin (Sn).

Abstract: A thin film transistor substrate and a display apparatus including the same includes a substrate; an active layer and a gate electrode on the substrate, the active layer and gate electrode being spaced apart from each other vertically; a gate insulating film including a first gate insulating film and a second gate insulating film provided between the active layer and the gate electrode; and a source electrode and a drain electrode, each of the source electrode and the drain electrode connected to the active layer. The first gate insulating film is provided closer to the gate electrode than the second gate insulating film, a dielectric constant of the first gate insulating film is higher than a dielectric constant of the second gate insulating film, and a hydrogen content of the first gate insulating film is lower than a hydrogen content of the second gate insulating film.

Abstract: A method for manufacturing a semiconductor layer is provided. The method for manufacturing a semiconductor layer may include preparing a substrate, and conducting a first unit process of reacting a first precursor including indium (In) and a first reaction source and a second unit process of reacting a second precursor including gallium (Ga) and a second reaction source to form a semiconductor layer including the indium and the gallium on the substrate.

Abstract: A method of manufacturing a display device including a pixel which is connected to a scan line and a data line intersecting the scan line. The pixel includes a light emitting element and a driving transistor controlling a driving current, which is supplied to the light emitting element, according to a data voltage received from the data line. The driving transistor includes a first active layer having an oxide semiconductor containing tin (Sn).

Abstract: An image sensor includes a substrate including a plurality of pixels and having a first surface and a second surface opposite to the first surface, a photoelectric conversion portion disposed in the substrate in each of the pixels, a transfer gate disposed on the first surface of the substrate in each of the pixels, a first interlayer insulating layer covering the substrate and the transfer gate, a first hydrogen blocking layer disposed on the first interlayer insulating layer, a first active pattern disposed on the first hydrogen blocking layer and including a metal oxide doped with nitrogen, a first gate disposed on the first active pattern, a second interlayer insulating layer covering the first gate and the first active pattern, and upper source/drain contacts penetrating the second interlayer insulating layer and contacting the first active pattern at two sides of the first gate.

Abstract: A method for manufacturing a sealing structure may comprise the steps of: providing a substrate in a chamber; forming a first material layer containing a silicon nitride (SiNx) on the substrate; and forming a second material layer containing a silicon oxide (SiOx) on the first material layer, wherein the step of forming the first material layer and the step of forming the second material layer are performed by a plasma-enhanced atomic layer deposition (PEALD) method.

Abstract: A display device and a method of manufacturing the display device are provided. The display device comprises a pixel which is connected to a scan line and a data line intersecting the scan line, wherein the pixel comprises a light emitting element and a driving transistor controlling a driving current, which is supplied to the light emitting element, according to a data voltage received from the data line, wherein the driving transistor comprises a first active layer having an oxide semiconductor containing tin (Sn).

Abstract: A display device may comprise: a substrate including a driving area and a pixel area; a first transistor on the driving area; a second transistor on the pixel area; a first hydrogen diffusion barrier film between a first active layer and a first gate insulating film of the first transistor; and a second hydrogen diffusion barrier film between a second active layer and a second gate insulating film of the second transistor.

Abstract: The present invention relates to technology for fabricating a gallium nitride substrate using an ion implantation process to which a self-separation technique is applied. According to the present invention, a method of fabricating a gallium nitride substrate may include a step of forming a first gallium nitride layer on a substrate, a step of implanting hydrogen ions into the first gallium nitride layer to form a separation layer, a step of grinding the edges of the substrate, the first gallium nitride layer, and the separation layer, a step of forming a second gallium nitride layer on the first gallium nitride layer having a ground edge, and a step of self-separating the second gallium nitride layer from the first gallium nitride layer having a ground edge.

Abstract: A photocurable composition includes (A) a photocurable monomer and (B) a silicon-containing monomer or oligomer thereof, the silicon-containing monomer being represented by Formula 1

Abstract: A display device and a method of manufacturing the display device are provided. The display device comprises a pixel which is connected to a scan line and a data line intersecting the scan line, wherein the pixel comprises a light emitting element and a driving transistor controlling a driving current, which is supplied to the light emitting element, according to a data voltage received from the data line, wherein the driving transistor comprises a first active layer having an oxide semiconductor containing tin (Sn).

Abstract: A thin film transistor is provided. The thin film transistor includes a substrate, an active pattern disposed on the substrate and including a nitride, a protective pattern disposed on the active pattern and including a non-nitride, a gate electrode overlapping with the active pattern, and a gate insulating layer between the gate electrode and the active pattern.

Abstract: Disclosed is a thin film transistor substrate that may include a base substrate, a first protection film disposed on the base substrate, an oxide semiconductor layer disposed on the first protection film, a gate electrode insulated from the oxide semiconductor layer and partially overlapped with at least one portion of the oxide semiconductor layer, a source electrode connected with the oxide semiconductor layer, and a drain electrode provided at a predetermined interval from the source electrode and connected with the oxide semiconductor layer, wherein the oxide semiconductor layer has a hydrogen content of 2.4 at % (atomic % or atom %)˜2.6 at %.

Abstract: A display apparatus includes a display device and an encapsulation layer covering the display device. The encapsulation layer includes a first inorganic encapsulation layer, a second inorganic encapsulation layer, and a hybrid encapsulation layer positioned between the first inorganic encapsulation layer and the second inorganic encapsulation layer. The hybrid encapsulation layer includes at least one of alucone, zircone, zincone, titanicone, and nickelcone.

Abstract: A stacked semiconductor device includes a plurality of semiconductor dies stacked in a vertical direction, first and second signal paths, a transmission unit and a reception unit. The first and second signal paths electrically connect the plurality of semiconductor dies, where each of the first signal path and the second signal path includes at least one through-substrate via. The transmission unit generates a first driving signal and a second driving signal in synchronization with transitioning timing of a transmission signal to output the first driving signal to the first signal path and output the second driving signal to the second signal path. The reception unit receives a first attenuated signal corresponding to the first driving signal from the first signal path and receives a second attenuated signal corresponding to the second driving signal from the second signal path to generate a reception signal corresponding to the transmission signal.

Abstract: An anisotropic conductive film, the anisotropic conductive film including an insulating layer and a conductive layer laminated on the insulating layer, the conductive layer containing conductive particles, wherein after glass substrates are positioned to face each other on the upper and lower surface of the anisotropic conductive film and are pressed against the anisotropic conductive film at 3 MPa (based on the sample area) and 160° C. (based on the detection temperature of the anisotropic conductive film) for 5 sec, a ratio of the area of the insulating layer to that of the conductive layer is from about 1.3:1 to about 3.0:1.