Abstract: A semiconductor device includes a first connection wiring in a first insulating film, an etching stop film, a buffer insulating film, a resistance pattern, a pattern etching stop film, a bottom surface of the pattern etching stop film contacting an upper surface of the resistance pattern, a second insulating film disposed on the buffer insulating film and the pattern etching stop film, a wiring via disposed in the second insulating film and penetrating the buffer insulating film and the etching stop film to contact the first connection wiring, a resistance via disposed in the second insulating film and penetrating the pattern etching stop film to contact the resistance pattern, and a second connection wiring disposed in the second insulating film and contacting the wiring via and the resistance via. A portion of the bottom surface of the pattern etching stop film is separated from the resistance pattern.

Abstract: A semiconductor device includes a first connection wiring in a first interlayer insulating film, an interlayer etching stop film, a buffer interlayer insulating film, a resistance pattern, a second interlayer insulating film, a wiring via disposed in the second interlayer insulating film and penetrating the buffer interlayer insulating film and the interlayer etching stop film, wherein the wiring via contacts the first connecting wiring, a resistance via disposed in the second interlayer insulating film and contacting the resistance pattern, and a second connection wiring disposed in the second interlayer insulating film and contacting the wiring via and the resistance via. A thickness of the buffer interlayer insulating film between the resistance pattern and the interlayer etching stop film is different from a thickness of the buffer interlayer insulating film through which the wiring via penetrates.

Abstract: A nano electromechanical device includes: a first electrode formed on an upper portion of a metal wiring layer; a second electrode spaced apart from the first electrode and arranged in parallel; a movable beam arranged between the first electrode and the second electrode and moving horizontally to contact the first electrode or the second electrode; and a via anchor connected to upper and lower portions of one side of the movable beam and supporting the movable beam. Therefore, the present disclosure can improve the durability of the device, operate at low driving voltage, and improve integration.

Abstract: A mattress assembly and furniture includes: an air pocket unit; a flow channel providing a passage through which the air flows and communicating with the air pocket unit; a pump for causing the air to flow into the air pocket unit; a valve unit including one or more valves selectively opened or closed to control the flow of air in the flow channel and the air pocket unit; a sensor unit configured to detect a pressure of the air pocket unit; and a controller configured to control the pump and the valve unit according to an external signal such that a hardness of the air pocket unit is set to one of a plurality of preset hardness levels.

Abstract: A contents sharing network is provided. An operating method of a control device includes determining a current state of possible states in a contents sharing process over a network; and displaying an icon indicating the current state among a plurality of predefined icons. The states are defined as a combination of at least one item of network connection, device discovery, a type of the discovered device, the number of the discovered devices, and existence of an available additional service.

Abstract: A mattress assembly includes: an air pocket unit configured to contain air; a pressure regulator for controlling the air pocket unit; and a body unit accommodating the air pocket unit and the pressure regulator. The body unit includes: a frame part having a top side open to provide an accommodation space for accommodating the air pocket unit and the pressure regulator; and a cover part disposed on the frame part to cover the accommodation space. The cover part includes; a first area formed to be relatively movable with respect to the frame part and covering or exposing the pressure regulator; and a second area disposed adjacent to the first area and fixed to the frame part. The first area faces an upper edge of the frame part when covering the pressure regulator.

Abstract: Disclosed are a method for readily setting a function of software of a home appliance after completion of an upgrade, and a device embodying the same. The method may comprise providing an upgrade completion notification message, comprising an area configured to suggest setting of an upgraded function of software, to the user. Accordingly, a newly upgraded function of the software may be set immediately after the upgrade of the software.

Abstract: An operating method of a storage controller includes receiving a permanent write protection command; checking a distribution of first data included in a target namespace corresponding to the permanent write protection command; setting at least one memory region as a protected memory region, based on at least one metric corresponding to each of a plurality of non-volatile memory devices; and migrating at least a portion of the first data, which is stored in a remaining memory region different from the protected memory region, to the protected memory region.

Abstract: A contents sharing network is provided. An operating method of a control device includes determining a current state of possible states in a contents sharing process over a network; and displaying an icon indicating the current state among a plurality of predefined icons. The states are defined as a combination of at least one item of network connection, device discovery, a type of the discovered device, the number of the discovered devices, and existence of an available additional service.

Abstract: A semiconductor device includes a landing pad on a substrate; a lower electrode extending in a vertical direction on the landing pad, the lower electrode connected to the landing pad; a capacitor dielectric layer on the lower electrode; a doping layer between the lower electrode and the capacitor dielectric layer, the doping layer being in contact with each of the lower electrode and the capacitor dielectric layer, the doping layer is doped with first to third materials, the first material having a trivalent atom valence electron, the second material having a tetravalent atom valence electron, and the third material having a pentavalent atom valence electron; and an upper electrode on the capacitor dielectric layer.

Abstract: A driving recognition-based regenerative braking control method of an xEV vehicle according to an embodiment of the present invention relates to a driving recognition-based regenerative braking control method of an xEV vehicle which optimally adjusts an amount of regenerative braking using preceding vehicle sensing and driving position information.

Abstract: A semiconductor device includes a source/drain pattern disposed on a substrate and a source/drain contact connected to the source/drain pattern. The source/drain contact includes a lower contact structure extending in a first direction and an upper contact structure protruding from the lower contact structure. The upper contact structure includes a first sidewall and a second sidewall facing away from each other in the first direction. The first sidewall of the upper contact structure includes a plurality of first sub-sidewalls, and each of the first sub-sidewalls includes a concave surface.

Abstract: An integrated circuit device including a substrate; a fin-type active region protruding from the substrate; a gate line intersecting the fin-type active region and covering a top surface and side walls thereof; a gate insulating capping layer covering the gate line; source/drain regions at sides of the gate line on the fin-type active region; first conductive plugs connected to the source/drain regions; a hard mask layer covering the first conductive plugs; and a second conductive plug between the first conductive plugs, the second conductive plug connected to the gate line by passing through the gate insulating capping layer and having a top surface higher than the top surface of each first conductive plug, wherein the hard mask layer protrudes from the first conductive plugs and toward the second conductive plug so that a portion of the hard mask layer overhangs from an edge of the first conductive plugs.

Abstract: A contents sharing network is provided. An operating method of a control device includes determining a current state of possible states in a contents sharing process over a network; and displaying an icon indicating the current state among a plurality of predefined icons. The states are defined as a combination of at least one item of network connection, device discovery, a type of the discovered device, the number of the discovered devices, and existence of an available additional service.

Abstract: A semiconductor device includes a source/drain pattern disposed on a substrate and a source/drain contact connected to the source/drain pattern. The source/drain contact includes a lower contact structure extending in a first direction and an upper contact structure protruding from the lower contact structure. The upper contact structure includes a first sidewall and a second sidewall facing away from each other in the first direction. The first sidewall of the upper contact structure includes a plurality of first sub-sidewalls, and each of the first sub-sidewalls includes a concave surface.

Abstract: An integrated circuit device includes a fin-type active region protruding from a top surface of a substrate and extending in a first direction parallel to the top surface of the substrate, a gate structure intersecting with the fin-type active region and extending on the substrate in a second direction perpendicular to the first direction, a source/drain region on a first side of the gate structure, a first contact structure on the source/drain region, and a contact capping layer on the first contact structure. A top surface of the first contact structure has a first width in the first direction, a bottom surface of the contact capping layer has a second width greater than the first width stated above in the first direction, and the contact capping layer includes a protruding portion extending outward from a sidewall of the first contact structure.

Abstract: The present disclosure provides a mobile communications system line number sheet management device and method. Provided, according to one aspect of the present disclosure, is a line number sheet management device and method, for automating access network-related line number sheet management by automatically collecting and updating line number information, the line number information being collected from a mobile communications base station management server (mobile communications system management server) and a fronthaul management server. Provided, according to another aspect of the present disclosure, is a fronthaul device for: acquiring unique information of a base station by receiving an optical signal from any one of a radio unit (RU) and a digital unit (DU); and transmitting the unique information of the base station to a fronthaul management server.

Abstract: A contents sharing network is provided. An operating method of a control device includes determining a current state of possible states in a contents sharing process over a network; and displaying an icon indicating the current state among a plurality of predefined icons. The states are defined as a combination of at least one item of network connection, device discovery, a type of the discovered device, the number of the discovered devices, and existence of an available additional service.

Abstract: An operating method for a storage controller in a storage system including a non-volatile memory (NVM) may include; receiving a write command defining a write operation in accordance with a predictable latency mode of the storage system that defines a deterministic window and a non-deterministic window, determining whether the write operation is performed during the deterministic window or the non-deterministic window, upon determining that the write operation is performed during the non-deterministic window, performing the write operation using a normal write mode, upon determining that the write operation is performed during the deterministic window, analyzing a metric associated with the NVM to generate metric analysis results, selecting a write operation approach from among a plurality of write operation approaches in response to the metric analysis results to define a selected write operation approach, and performing the write operation using the selected write operation approach.

Abstract: An integrated circuit device includes a fin-type active region protruding from a top surface of a substrate and extending in a first direction parallel to the top surface of the substrate, a gate structure intersecting with the fin-type active region and extending on the substrate in a second direction perpendicular to the first direction, a source/drain region on a first side of the gate structure, a first contact structure on the source/drain region, and a contact capping layer on the first contact structure. A top surface of the first contact structure has a first width in the first direction, a bottom surface of the contact capping layer has a second width greater than the first width stated above in the first direction, and the contact capping layer includes a protruding portion extending outward from a sidewall of the first contact structure.