Abstract: In order to solve the problems of a conventional flat surface wave generator which has limitations on being applied to a curved structure due to more than a certain required thickness of a dielectric material, proposed are a flexible surface wave generator and system and method for surface wave communication using the same where the flexible surface wave generator is bendable by removing a third dielectric material and by making a first and a second dielectric material thin and at the same time reaches communication performance applicable to the ISM band by changing a pattern of a surface wave generation member and by forming a slit in a radiator material, so it is possible to easily establish a surface wave communication system even in environments where a conventional flat surface wave generator is difficult to be applied by being tightly attached to the surface of a metal medium with curvature.

Abstract: An active air skirt apparatus controls an airflow flowing to a lower side of a mobility device according to a traveling state of the mobility device, thereby securing optimal aerodynamic performance. In addition, disclosed herein is an active air skirt apparatus, which stably moves a flap for controlling the airflow when a vehicle travels at high speed, thereby improving durability and reliability.

Abstract: Silicon carbide power semiconductor device having uniform channel length and manufacturing method thereof disclosed. The power semiconductor device includes a drift region of a first conductivity type, a plurality of body regions of a second conductivity type, being formed to be spaced apart from each other with a preset WS in a horizontal direction in an upper region of the drift region, a JFET region of the first conductivity type and a low-resistance region of the first conductivity type, being formed in a separation space between adjacent body regions to contact their side surfaces with the adjacent body regions and a source region of the first conductivity type, being formed in a surface region in the body region in contact with the low-resistance region to be spaced apart from the low-resistance region by a preset channel length.

Abstract: A positive electrode active material including a first lithium composite oxide particle including a secondary particle formed by aggregation of one or more primary particles, and a coating oxide occupying at least a part of at least one of surfaces of the secondary particle, grain boundaries between the primary particles, or surfaces of the primary particles, the positive electrode active material satisfying an equation of 1.3?a/b?3.0, wherein a represents a max peak intensity at 2theta=44.75° to 44.80° and b represents a max peak intensity at 2theta=45.3° to 45.6° in X-ray diffraction (XRD) analysis using Cu K? radiation.

Abstract: Provided are a method for preparing a pixel defining layer comprising applying and coating, pre-baking, exposing to light, developing, and post-baking of a photosensitive composition containing a colorant having a pigment with an average particle size of 100 nm or less, wherein the coated film generated after the post-baking has an optical density of 0.8/?m to 2.0/?m, a roughness of 3.0 nm or less, and no residue; and an organic light emitting display device comprising the pixel defining layer obtained by the method which has improved display reliability and lifetime as well as vivid colors.

Abstract: A variable grille apparatus can adjust a flow rate of air flowing through a grille and upgrade an opening/closing operation when adjusting the flow rate of the air, thereby improving merchantability. In addition, by diversifying the opening/closing operation of the grille such as sequentially operating or simultaneously operating the opening/closing operation of the grille, it is possible to upgrade the opening/closing operation of the grille, diversify the exterior design, and secure the flow rate of air through the optimization of the structural arrangement.

Abstract: Disclosed are an electrolyte membrane of a membrane-electrode assembly including an electronic insulation layer, which greatly improves the durability of the electrolyte membrane, and a method of preparing the same. The electrolyte membrane includes an ion exchange layer and an electronic insulation layer provided on the ion exchange layer, and the electronic insulation layer includes one or more catalyst complexes, and a second ionomer Particularly, each of the one or more catalyst complex includes a catalyst particle and a first ionomer coated on the entirety or a portion of the surface of the catalyst particle, and the one or more catalyst complexes are dispersed the second ionomer.

Abstract: A data processing method according to the present invention comprises obtaining pieces of scan data from different models; aligning the obtained pieces of scan data; and merging a portion of one of the aligned pieces of scan data with another of the aligned pieces of scan data.

Abstract: A variable grille apparatus controls a flow rate of air circulated through the grille. Commercial properties are improved through an advanced opening and closing operation during adjustment of the air flow rate. The opening and closing operation of the grille is diversified, such as by sequential or simultaneous operation, so that the sense of operation is enhanced, an exterior design is diversified, and the air flow is secured through an optimization of the structural arrangement.

Abstract: An image encoding/decoding method, device and recording medium based on accumulation of a region of interest of the present disclosure may include partitioning a current image to acquire a region of interest, cumulatively expressing the region of interest in a reference image of the current image and decoding the current image based on a reference image in which the region of interest is cumulatively expressed.

Abstract: Discussed is a battery pack case that may include a first case and a second case configured such that outer peripheries of the first case and the second case are coupled to each other by ultrasonic welding, wherein the outer periphery of the first case comprises a flat portion and a projecting portion formed as a result of a middle of the first case in a thickness direction projecting from the flat portion. Further, the outer periphery of the second case comprises a receiving portion configured to be fused with the projecting portion and an outer guide portion projecting from the receiving portion so as to face the flat portion, and a control rib projecting from at least a part of the flat portion is provided.

Abstract: Various aspects of the present disclosure provide a semiconductor device, for example comprising a finger print sensor, and a method for manufacturing thereof. Various aspects of the present disclosure may, for example, provide an ultra-slim finger print sensor having a thickness of 500 ?m or less that does not include a separate printed circuit board (PCB), and a method for manufacturing thereof.

Abstract: In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.

Abstract: The present invention relates to a method and system for providing language learning services. The method of providing language learning services, according to the present invention, the method may include: activating, in response to receiving an input for acquiring a learning target image through a user terminal, a camera of the user terminal; specifying at least a portion of an image taken by the camera as the learning target image; receiving language learning information for the learning target image from a server; providing the language learning information to the user terminal; and storing, based on a request for storing of the language learning information, the language learning information in association with the learning target image, such that the learning target image is used in conjunction with learning of the language learning information.

Abstract: A wafer level fan out package includes a semiconductor die having a first surface, a second surface, and a third surface. A stiffener is disposed on the third surface of the semiconductor die. A conductive via passes through the stiffener. First and second electrically conductive patterns electrically connected to the conductive via are disposed on the first and second surfaces of the semiconductor die and stiffener. Solder balls are electrically connected to the first or second electrically conductive patterns.

Abstract: A semiconductor manufacturing equipment may include a process chamber for treating a substrate; a front-end module including a first transfer robot, wherein the first transfer robot may be configured to transport the substrate received in a container; a transfer chamber between the front-end module and the process chamber, wherein the transfer chamber may be configured to load or unload the substrate into or out of the process chamber; and a cassette capable of receiving a replaceable component capable of being used in the process chamber. The front-end module may include a seat plate configured to move in a sliding manner so as to retract or extend into or from the front-end module. The cassette may be configured to be loaded into the front-end module while the cassette is seated on the seat plate.

Abstract: A circuit board according to an embodiment comprises an insulating layer; an electrode layer disposed on the insulating layer; and a protective layer disposed on the insulating layer and including an opening vertically overlapping at least a portion of an upper surface of the electrode layer; wherein the electrode layer includes: a first layer disposed on the insulating layer; a second layer disposed on the first layer; a third layer disposed on the second layer; and a fourth layer disposed on the third layer, wherein a width of the second layer is greater than a width of the third layer, wherein a thickness of the second layer is greater than a thickness of the third layer, and wherein a height of an upper surface of the protective layer is equal to or less than a height of an upper surface of the third layer.

Abstract: An integrated circuit device includes a fin-type active region protruding from a top surface of a substrate and extending in a first direction parallel to the top surface of the substrate, a gate structure intersecting with the fin-type active region and extending on the substrate in a second direction perpendicular to the first direction, a source/drain region on a first side of the gate structure, a first contact structure on the source/drain region, and a contact capping layer on the first contact structure. A top surface of the first contact structure has a first width in the first direction, a bottom surface of the contact capping layer has a second width greater than the first width stated above in the first direction, and the contact capping layer includes a protruding portion extending outward from a sidewall of the first contact structure.

Abstract: A semiconductor memory device includes a substrate including an element separation film and an active region defined by the element separation film, a bit line structure on the substrate, a trench in the element separation film and the active region, the trench on at least one side of the bit line structure and including a first portion in the element separation film and a second portion in the active region, a bottom face of the first portion placed above a bottom face of the second portion, a single crystal storage contact filling the trench, and an information storage element electrically connected to the single crystal storage contact.