Abstract: A sensor device includes a microelectromechanical system (MEMS) force sensor, and a capacitive acceleration sensor. In the method of manufacturing the sensor device, a sensor portion of the MEMS force sensor is prepared over a front surface of a first substrate. The sensor portion includes a piezo-resistive element and a front electrode. A bottom electrode and a first electrode are formed on a back surface of the first substrate. A second substrate having an electrode pad and a second electrode to the bottom of the first substrate are attached such that the bottom electrode is connected to the electrode pad and the first electrode faces the second electrode with a space therebetween.

Abstract: A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches.

Abstract: MEMS devices and methods of fabrication thereof are described. In one embodiment, the MEMS device includes a bottom alloy layer disposed over a substrate. An inner material layer is disposed on the bottom alloy layer, and a top alloy layer is disposed on the inner material layer, the top and bottom alloy layers including an alloy of at least two metals, wherein the inner material layer includes the alloy and nitrogen. The top alloy layer, the inner material layer, and the bottom alloy layer form a MEMS feature.

Abstract: MEMS devices and methods of fabrication thereof are described. In one embodiment, the MEMS device includes a bottom alloy layer disposed over a substrate. An inner material layer is disposed on the bottom alloy layer, and a top alloy layer is disposed on the inner material layer, the top and bottom alloy layers including an alloy of at least two metals, wherein the inner material layer includes the alloy and nitrogen. The top alloy layer, the inner material layer, and the bottom alloy layer form a MEMS feature.

Abstract: A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches.

Abstract: MEMS devices and methods of fabrication thereof are described. In one embodiment, the MEMS device includes a bottom alloy layer disposed over a substrate. An inner material layer is disposed on the bottom alloy layer, and a top alloy layer is disposed on the inner material layer, the top and bottom alloy layers including an alloy of at least two metals, wherein the inner material layer includes the alloy and nitrogen.

Abstract: A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches.

Abstract: A sensor device includes a microelectromechanical system (MEMS) force sensor, and a capacitive acceleration sensor. In the method of manufacturing the sensor device, a sensor portion of the MEMS force sensor is prepared over a front surface of a first substrate. The sensor portion includes a piezo-resistive element and a front electrode. A bottom electrode and a first electrode are formed on a back surface of the first substrate. A second substrate having an electrode pad and a second electrode to the bottom of the first substrate are attached such that the bottom electrode is connected to the electrode pad and the first electrode faces the second electrode with a space therebetween.

Abstract: A method of manufacturing a semiconductor device is provided. A first substrate is bonded with a second substrate. The second substrate is recessed to form a first sidewall and a first cavity laterally defined by the first sidewall. The second substrate is recessed to form a second sidewall and a second cavity laterally defined by the second sidewall. The second substrate is bonded with a third substrate at a first barometric pressure thereby forming the first cavity and the second cavity. The first sidewall is recessed to form a channel from the first cavity to an outer surface of the first sidewall. The third substrate is recessed and the first cavity is exposed to a second barometric pressure different from the first barometric pressure.

Abstract: A method of manufacturing a semiconductor device is provided. A first substrate is bonded with a second substrate. The second substrate is recessed to form a first sidewall and a first cavity laterally defined by the first sidewall. The second substrate is recessed to form a second sidewall and a second cavity laterally defined by the second sidewall. The second substrate is bonded with a third substrate at a first barometric pressure thereby forming the first cavity and the second cavity. The first sidewall is recessed to form a channel from the first cavity to an outer surface of the first sidewall. The third substrate is recessed and the first cavity is exposed to a second barometric pressure different from the first barometric pressure.

Abstract: A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches.

Abstract: MEMS devices and methods of fabrication thereof are described. In one embodiment, the MEMS device includes a bottom alloy layer disposed over a substrate. An inner material layer is disposed on the bottom alloy layer, and a top alloy layer is disposed on the inner material layer, the top and bottom alloy layers including an alloy of at least two metals, wherein the inner material layer includes the alloy and nitrogen. The top alloy layer, the inner material layer, and the bottom alloy layer form a MEMS feature.

Abstract: A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches.

Abstract: MEMS devices and methods of fabrication thereof are described. In one embodiment, the MEMS device includes a bottom alloy layer disposed over a substrate. An inner material layer is disposed on the bottom alloy layer, and a top alloy layer is disposed on the inner material layer, the top and bottom alloy layers including an alloy of at least two metals, wherein the inner material layer includes the alloy and nitrogen. The top alloy layer, the inner material layer, and the bottom alloy layer form a MEMS feature.

Abstract: A device includes a substrate, a first structure, a second structure, a third structure and a bumper. The first structure is over the substrate. The second structure is over the substrate, wherein the second structure has a first end coupled to the first structure. The third structure is over the substrate, wherein the third structure is coupled to a second end of the second structure. The bumper is between the substrate and the third structure, wherein the bumper is a multi-layered bumper including a first conductive feature, a dielectric feature and a second conductive feature. The dielectric feature is over the first conductive feature. The second conductive feature is over the dielectric feature and electrically connected to the first conductive feature.

Abstract: A device includes a substrate, a first structure, a second structure, a third structure and a bumper. The first structure is over the substrate. The second structure is over the substrate, wherein the second structure has a first end coupled to the first structure. The third structure is over the substrate, wherein the third structure is coupled to a second end of the second structure. The bumper is between the substrate and the third structure, wherein the bumper is a multi-layered bumper including a first conductive feature, a dielectric feature and a second conductive feature. The dielectric feature is over the first conductive feature. The second conductive feature is over the dielectric feature and electrically connected to the first conductive feature.

Abstract: A method of forming a structure for a gyroscope sensor includes forming a first dielectric over a substrate and a material layer over the first dielectric layer. A first portion of the material layer is removed to form a recess and a second portion of the material layer is removed to define a first channel between a gyro disk and a frame. A second channel is formed in the substrate corresponding to the first channel, and a portion of the first dielectric is removed to form a second dielectric between the gyro disk and the substrate.

Abstract: Exemplary microelectromechanical system (MEMS) devices, and methods for fabricating such are disclosed. An exemplary method includes providing a silicon-on-insulator (SOI) substrate, wherein the SOI substrate includes a first silicon layer separated from a second silicon layer by an insulator layer; processing the first silicon layer to form a first structure layer of a MEMS device; bonding the first structure layer to a substrate; and processing the second silicon layer to form a second structure layer of the MEMS device.

Abstract: A device includes a stationary structure, a spring and a proof mass. The stationary structure has a first portion and a second portion. The spring is over a substrate. The spring has a first protrusion protruded from an edge and extended toward the first portion of the stationary structure. The proof mass is over the substrate and supported by the sparing. The proof mass has a second protrusion protruded from an edge and extended toward the second portion of the stationary structure. A first gap between the first protrusion and the first portion is less than a second gap between the second protrusion and the second portion.

Abstract: A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches.